Location via proxy:   [ UP ]  
[Report a bug]   [Manage cookies]                
skip to main content
10.5555/1131355.1131397guideproceedingsArticle/Chapter ViewAbstractPublication PagesdateConference Proceedingsconference-collections
Article
Free access

FlexRay transceiver in a 0.35 μm CMOS high-voltage technology

Published: 06 March 2006 Publication History

Abstract

This paper presents one of the first fully functional FlexRay transceivers manufactured in a 0.35 μm CMOS High-Voltage technology, which provides high voltage MOS devices together with standard 3.3 V gates. The circuit operates as interface between a generic controller and the copper wire FlexRay physical bus, to be used in fault tolerant and fail safe applications. In particular, the transceiver meets the operating requirements of the automotive environment. The design was validated by means of simulations and experimental measurements on fabricated prototypes.

References

[1]
D. K. Ward, H. L. Fields, "A Vision of the Future Automotive Electronics," SAE Paper 2000-01-1358.
[2]
H. Kopetz, "Automotive Electronics," Proc. Of Euromicro Conference on Real-Time Systems, EMRTS, pp. 132--140, Jun. 1999.
[3]
D. Sparks, T. Noll, D. Agrotis, T. Betzener, K. Gschwend, "Multi-Sensor Modules with Data Bus Communication Capability," SAE Paper 1999-01-1277.
[4]
N. Navet, Y. Song, F. Simon-Lion, C. Wilwert, "Trends in automotive communication systems,"Proc. of IEEE, vol. 93, no. 6, pp. 1204--1223, Jun. 2005.
[5]
C. A. Lupini, "Multiplex Bus progression," SAE Paper 2001-01-0060.
[6]
B. D. Emaus, "Current Vehicle Network Architectures Trends -- 2000," SAE Paper 2000-01-0146.
[7]
R. Hadeler and H. J. Mathony, "Design of Intelligent Body Networks," SAE Paper 2000-01-0152.
[8]
FlexRay Communications Systems Protocol Specifications v. 2.0, June 30 2004.
[9]
Road Vehicles, "Interchange of Digital Information -- Controller Area Network (CAN)," International Standard Organisation (ISO), Standard-11898, Nov. 1993.
[10]
M. Knaipp, G. Rohrer, R. Minixhofer, E. Seebacher, "Investigations on the high current behavior of lateral diffused high-voltage transistors", IEEE-Trans. Electron Dev., vol.51, n.10, pp.1711--1720, Oct. 2004.
[11]
R. M. Forsyth, "Technology and Design of integrated circuits for up to 50V applications", Proc. of 2003 Int. Conf. On Industrial Technology ICIT-03, pp.7--13, Maribor, Dec. 2003.
[12]
M. Knaipp, J. M. Park, "Cost effective integration of 70V LDMOS devices in a 0.35μm standard low voltage CMOS process", 7th Int. Seminar on Power Semiconductors ISPS'04, Prague, pp. 251--254, Sep. 2004.
[13]
W. Posch, G. Rappitsch, G. Leonardelli, "MOS transistor mismatch modelling for high voltage CMOS processes", Proc. of 2005 IEEE/SEMI Advanced Semiconductor Manufacturing Conference and Workshop ASMC 2005, Munich, pp. 256--260, April 2005.

Recommendations

Comments

Information & Contributors

Information

Published In

cover image Guide Proceedings
DATE '06: Proceedings of the conference on Design, automation and test in Europe: Designers' forum
March 2006
262 pages
ISBN:3981080106

Sponsors

  • EDAA: European Design Automation Association
  • The EDA Consortium
  • IEEE-CS\DATC: The IEEE Computer Society

Publisher

European Design and Automation Association

Leuven, Belgium

Publication History

Published: 06 March 2006

Qualifiers

  • Article

Acceptance Rates

DATE '06 Paper Acceptance Rate 45 of 45 submissions, 100%;
Overall Acceptance Rate 518 of 1,794 submissions, 29%

Contributors

Other Metrics

Bibliometrics & Citations

Bibliometrics

Article Metrics

  • 0
    Total Citations
  • 328
    Total Downloads
  • Downloads (Last 12 months)20
  • Downloads (Last 6 weeks)5
Reflects downloads up to 10 Nov 2024

Other Metrics

Citations

View Options

View options

PDF

View or Download as a PDF file.

PDF

eReader

View online with eReader.

eReader

Get Access

Login options

Media

Figures

Other

Tables

Share

Share

Share this Publication link

Share on social media