Runtime leakage power estimation technique for combinational circuits

The current use of multi-V_t to control leakage power targets combinational gates, even though sequential elements such as flip-flops and latches also contribute appreciable leakage. We can, nevertheless, apply multi-V_t to flip-flops, but few can take ...

With the scaling of CMOS technology, subthreshold, gate, and reverse biased junction band-to-band-tunneling leakage have increased dramatically. Together, they account for more than 25 percent of power consumption in the current generation of leading ...

Low supply voltage requires the device threshold to be reduced in order to maintain performance. As the device threshold voltage is reduced, it results in an exponential increase of leakage current in the subthreshold region. The leakage power is no ...