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Design and implementation of an adaptive proactive reconfiguration technique for SRAM caches

Published: 18 March 2013 Publication History

Abstract

Scaling of device dimensions toward nano-scale regime has made it essential to innovate novel design techniques for improving the circuit robustness. This work proposes an implementation of adaptive proactive reconfiguration methodology that can first monitor process variability and BTI aging among 6T SRAM memory cells and then apply a recovery mechanism to extend the SRAM lifetime. Our proposed technique can extend the memory lifetime between 2X to 4.5X times with a silicon area overhead of around 10% for the monitoring units, in a 1kB 6T SRAM memory chip.

References

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Kunhyuk Kang; et al. "NBTI induced performance degradation in logic and memory circuits", ASPDAC, pp 726--731,2008.
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K. Kang; et al. "Impact of negative-bias temperature instability in nanoscale SRAM array," IEEE TCAD, pp. 1770--1781, 2007.
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A. Bansal; et al. "Impacts of NBTI and PBTI on SRAM static/dynamic noise margins," Microelectronics Reliability, pp. 642--649, 2009.
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T. Grasser; et al. "Simultaneous Extraction of Recoverable and Permanent Components Contributing to Bias-Temperature Instability," IEEE IEDM, pp 801--804, 2007.
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S. Ghosh; et al. "Parameter Variation Tolerance and Error Resiliency: New Design Paradigm for the Nanoscale Era," IEEE Proceedings, pp 1718--1751, 2010.
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P. Pouyan; et al."Process-Variability Aware Proactive Reconfiguration Technique for Mitigating Aging Effects in Nano-scale SRAM Lifetime" Proc VTS, pp 240--245, 2012.
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J. Shin; et al. "A Proactive Wearout Recovery Approach for Exploiting Microarchitectural Redundancy to Extend Cache SRAM Lifetime," Proc of 35th ISCA, pp. 353--362, 2008.
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I. Kim; et al. "Built in Self Repair for Embedded High Density SRAM," Proc Test, pp. 1112--1119, 1998.
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K. Kang; et al. "Characterization of NBTI induced temporal performance degradation in nano-scale SRAM array using IDDQ," IEEE Int. Test, pp. 1--10, 2007.
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Z. Qi; et al. "SRAM-Based NBTI/PBTI Sensor System Design," IEEE DAC, pp 849--852, 2010.
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F. Ahmed; et al. "Reliable Cache Design with On-Chip Monitoring of NBTI Degradation in SRAM Cells using BIST," Proc VTS, pp 63--68, 2010.
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Ceratti, A.; et al. "On-chip aging sensor to monitor NBTI effect in nano-scale SRAM," Proc DDECS, pp 354--359, 2012.
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S. Barasinski; et al. "A 45nm single power supply SRAM supporting low voltage operation down to 0.6V," ESSCIRC, pp 502--505, 2008.

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        cover image ACM Conferences
        DATE '13: Proceedings of the Conference on Design, Automation and Test in Europe
        March 2013
        1944 pages
        ISBN:9781450321532

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        EDA Consortium

        San Jose, CA, United States

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        Published: 18 March 2013

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        DATE 13
        Sponsor:
        • EDAA
        • EDAC
        • SIGDA
        • The Russian Academy of Sciences
        DATE 13: Design, Automation and Test in Europe
        March 18 - 22, 2013
        Grenoble, France

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        Overall Acceptance Rate 518 of 1,794 submissions, 29%

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