Location via proxy:   [ UP ]  
[Report a bug]   [Manage cookies]                
skip to main content
10.5555/2755753.2757079acmconferencesArticle/Chapter ViewAbstractPublication PagesdateConference Proceedingsconference-collections
research-article

A CNN-inspired mixed signal processor based on tunnel transistors

Published: 09 March 2015 Publication History

Abstract

Novel devices are under investigation to extend the performance scaling trends that have long been associated with Moore's Law-based device scaling. Among the emerging devices being studied, tunnel FETs (or TFETs) are particularly attractive, especially when targeting low power systems. This paper studies the potential of analog/mixed-signal information processing using TFETs. The design of a highly-parallel processor -- inspired by cellular neural networks -- is presented. Signal processing is performed partially in the time-domain to better leverage the unique properties of TFETs, i.e., (i) steep slopes (highgm/IDS) in the subthreshold region, and (ii) high output resistance in the saturation region. Assuming an InAs TFET with feature sizes comparable to the 14 nm technology node, a power efficiency of 10,000 GOPS/W is projected. By comparison, state-of-the-art hardware assuming CMOS technology promises a power efficiency only close to 1,000 GOPS/W.

References

[1]
A. C. Seabaugh, Q. Zhang, "Low-voltage tunnel transistors for beyond CMOS logic," Proc. IEEE, vol. 98, no. 12, pp. 2095--2110, Dec. 2010.
[2]
H. Lu, A. Seabaugh, "Tunnel Field-Effect transistors: state-of-the-art," IEEE J. Electron Devices Society, vol. 2, no. 4, pp. 44--49, Jul. 2014.
[3]
K. Tomioka, et al., "Steep-slope tunnel field-effect transistors using III-V nanowire/Si heterojunction," in VLSI Symp. Tech. Dig., 2012, pp. 47--48.
[4]
S. Mookerjea, et al., "Effective capacitance and drive current for tunnel-FET (TFET) CV/I estimation," IEEE TED, 56(9), pp. 2092--8, 2009.
[5]
P. Ghedini der Agopian, et al., "Experimental comparison between trigate p-TFET and p-FinFET analog performance as a function of temperature," IEEE Trans. Electron Devices, vol. 60, no. 8, pp. 2493--2497, Aug. 2013.
[6]
S. O. Koswatta, et al., "Performance comparison between pin tunneling transistors and conventional MOSFETs," IEEE TED, 56(3), pp. 456--65, 2009.
[7]
V. Saripalli, et al., "An energy-efficient heterogeneous CMP based on hybrid TFET-CMOS cores," DAC, pp. 729--734, 2011.
[8]
U. E. Avci, et al., "Comparison of performance, switching energy and process variations for the TFET and MOSFET in logic," in VLSI Symp. Tech. Dig., pp. 124--125, 2011
[9]
Y. Lee, et al., "Low-Power circuit analysis and design based on heterojunction tunneling transistors (HETTs)," IEEE TVLSI, 21(9), pp. 1632--43, 2013.
[10]
K. Swaminathan, et al., "An Examination of the Architecture and System-level Tradeoffs of Employing Steep Slope Devices in 3D CMPs'," ISCA, p. 241--252, 2014.
[11]
B. Senale-Rodriguez, et al., "Perspectives of TFETs for low power analog ICs," in IEEE Subthreshold Microelectronics Conf., 2012, pp. 1--3.
[12]
A. R. Trivedi, S. Carlo, S. Mukhopadhyay, "Exploring tunnel-FET for ultra low power analog applications: a case study on operational transconductance amplifier," Design Automation Conf., 2013, pp. 1--6.
[13]
H. Liu, et al., "Tunnel FET-Based Ultra-Low Power, Low-Noise Amplifier Design for Bio-signal Acquisition," ISLPED, p. 57--62, 2014.
[14]
H. Liu, et al., "Tunnel FET-based ultra-low power, high sensitivity UHF RFID rectifier," ISLPED, p. 157--62, 2013.
[15]
X. Li, et al., "RF-Powered Systems Using Steep Slope Devices," IEEE NEWCAS, 2014.
[16]
P. Dudek, and P. Hicks, "A general-purpose processor-per-pixel analog SIMD vision chip," IEEE TCAS 1, 52(1), pp. 13--20, Jan. 2005.
[17]
R. Pawlowski, et al., "A 530mV 10-lane SIMD processor with variation resiliency in 45nm SOI," ISSCC, 2012, pp. 492--494.
[18]
S. Carey, et al., "A 100000 fps vision sensor with embedded 535GOPS/W 256x256 SIMD processor array," in Proc. Symp. VLSI Circuits (VLSIC), 2013, pp. C182--183.
[19]
A. Rodriguez-Vazquez, et al., "ACE16k: The third generation of mixed-signal SIMD-CNN ACE chips toward vSoCs," IEEE TCAS-1, 51(5), pp. 851--863, May 2004.
[20]
S. Lee, et al., "24-GOPS 4.5-mm digital cellular neural network for rapid visual attention in an object recognition SOC," IEEE Trans. Neural Netw., vol. 22, no. 1, pp. 64--73, Jan. 2011.
[21]
M. Di Fednferico, et al., "SCDVP: A Simplicial CNN Digital Visual Processor," IEEE TCAS-I, 61(7), p. 1962--9, 2014.
[22]
W. Miao, et al., "A programmable SIMD vision chip for real-time vision applications," IEEE J. Solid-State Cir., 43(6), pp. 1470--9, Jun. 2008.
[23]
W. Zhang, et al., "A programmable vision chip based on multiple levels of parallel processors," IEEE JSSC, 46(9), pp. 2132--47, 2011.
[24]
S. Lee, et al., "A 345mW heterogeneous many-core processor with an intelligent inference engine for robust object recognition," ISSCC, pp. 332--333, 2010.
[25]
N. Cottini, et al., "A 33uW 64x64 pixel vision sensor embedding robust dynamic background subtraction for event detection and scene interpretation," IEEE JSSC, 48(3), pp. 850--863, 2013.
[26]
Y. Lee, et al., "Low-Power Circuit Analysis and Design Based on Heterojunction Tunneling Transistors (HETTs)," IEEE T. on VLSI, 21(9), p. 1632--1643, 2013.
[27]
J. Singh, et al., "A Novel Si-Tunnel FET based SRAM Design for Ultra Low-Power 0.3V VDD Applications," ASP-DAC, p. 181--6, 2010.
[28]
L. Chua and L. Yang, "Cellular Neural Networks: Theory," IEEE TCAS, 35(10), p. 1257--1272, 1988.
[29]
A. Horvth, et al., "Architectural Impacts of Emerging Transistors," IEEE NEWCAS, 2014.
[30]
M. Nagata, et al., "A smart CMOS imager with pixel level PWM signal processing," VLSI Symp. Tech. Dig., 1999, pp. 141--144.
[31]
K. R. Crounse and L. Chua, "Methods for image processing and pattern formation in Cellular Neural Networks: a tutorial," IEEE T. on CAS, 42(10), p. 583--601, 1995.
[32]
G. Zhou, et al., "Novel gate-recessed vertical InAs/GaSb TFETs with record high Ion of 180 A/m at VDS = 0.5 V," IEEE Int. Electron Devices Meeting (IEDM), 10--13 Dec. 2012, pp. 32.6.1--32.6.4.
[33]
B. Sedighi, et al., "Analog Circuit Design Using Tunnel-FETs," IEEE TCAS-I, 2014.
[34]
(2013). The International Technology Roadmap of Semiconductors {Online}. Available: http://www.itrs.net.
[35]
S. Ando, "Consistent Gradient Operations," IEEE Trans. Pattern Anal. Mach. Intell., vol. 22, no. 3, pp. 252--265, Mar. 2000.

Recommendations

Comments

Information & Contributors

Information

Published In

cover image ACM Conferences
DATE '15: Proceedings of the 2015 Design, Automation & Test in Europe Conference & Exhibition
March 2015
1827 pages
ISBN:9783981537048

Sponsors

Publisher

EDA Consortium

San Jose, CA, United States

Publication History

Published: 09 March 2015

Check for updates

Qualifiers

  • Research-article

Conference

DATE '15
Sponsor:
  • EDAA
  • EDAC
  • SIGDA
  • Russian Acadamy of Sciences
DATE '15: Design, Automation and Test in Europe
March 9 - 13, 2015
Grenoble, France

Acceptance Rates

DATE '15 Paper Acceptance Rate 206 of 915 submissions, 23%;
Overall Acceptance Rate 518 of 1,794 submissions, 29%

Upcoming Conference

DATE '25
Design, Automation and Test in Europe
March 31 - April 2, 2025
Lyon , France

Contributors

Other Metrics

Bibliometrics & Citations

Bibliometrics

Article Metrics

  • 0
    Total Citations
  • 73
    Total Downloads
  • Downloads (Last 12 months)1
  • Downloads (Last 6 weeks)0
Reflects downloads up to 24 Jan 2025

Other Metrics

Citations

View Options

Login options

View options

PDF

View or Download as a PDF file.

PDF

eReader

View online with eReader.

eReader

Figures

Tables

Media

Share

Share

Share this Publication link

Share on social media