The penetration behavior of MeV F ions in botanic materials (onion inner surface membrane and kid... more The penetration behavior of MeV F ions in botanic materials (onion inner surface membrane and kidney bean coat) was studied with a transmission measurement method. The dose rate of the ion beam was about approximately 104 ions/cm2 s and 1012 ions/cm2 s respectively. A silicon barrier detector that was placed behind the sample recorded the possibly penetrated ions. The irradiation
Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms, 2008
Defects in GaN films can be revealed by wet etching in hot H3PO4 and molten potassium hydroxide o... more Defects in GaN films can be revealed by wet etching in hot H3PO4 and molten potassium hydroxide or by photoelectrochemical (PEC) etching. GaN film was irradiated by 500keV Au ions with ion fluences in the range from 1×109/cm2 to 5×1015/cm2. Afterwards, AZ-400K photoresist developer and aqueous KOH were used for wet etching of GaN at a relatively low temperature of 80°C. With this method, defects in GaN films, after being irradiated by heavy ions, can be revealed with an etch pit density of 106–108/cm2, the same magnitude with that in as-grown GaN films. Additionally, the etched pits present different features at different ion fluences. Our experimental results indicate that heavy ion irradiation can enhance the wet etching of GaN films at the sites having original defects. The related mechanism was also discussed in this paper.
Pergamon Radiat. Phys. Chem. Vol. 52, Nos I 6, pp. 251 256, 1998 1998 Elsevier Science Ltd. All r... more Pergamon Radiat. Phys. Chem. Vol. 52, Nos I 6, pp. 251 256, 1998 1998 Elsevier Science Ltd. All rights reserved Printed in Great Britain PII: S0969806X(98)001509 0969806X 98 SI9.00 + 0.00 STUDY ON OXIDATION OF POLYMERS TREATED BY HIGH LET ...
Dry and water-imbibed seeds of Arabidopsis thaliana were irradiated by H+ ions with energy in the... more Dry and water-imbibed seeds of Arabidopsis thaliana were irradiated by H+ ions with energy in the range of million electron volt. The inhibition of germination and survival were investigated to study the influence of ion fluence on the state of the seeds. A saddle shape of the fluence - response curve was found. Under the same irradiation conditions, the germination
The penetration behavior of MeV F ions in botanic materials (onion inner surface membrane and kid... more The penetration behavior of MeV F ions in botanic materials (onion inner surface membrane and kidney bean coat) was studied with a transmission measurement method. The dose rate of the ion beam was about approximately 104 ions/cm2 s and 1012 ions/cm2 s respectively. A silicon barrier detector that was placed behind the sample recorded the possibly penetrated ions. The irradiation
Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms, 2008
Defects in GaN films can be revealed by wet etching in hot H3PO4 and molten potassium hydroxide o... more Defects in GaN films can be revealed by wet etching in hot H3PO4 and molten potassium hydroxide or by photoelectrochemical (PEC) etching. GaN film was irradiated by 500keV Au ions with ion fluences in the range from 1×109/cm2 to 5×1015/cm2. Afterwards, AZ-400K photoresist developer and aqueous KOH were used for wet etching of GaN at a relatively low temperature of 80°C. With this method, defects in GaN films, after being irradiated by heavy ions, can be revealed with an etch pit density of 106–108/cm2, the same magnitude with that in as-grown GaN films. Additionally, the etched pits present different features at different ion fluences. Our experimental results indicate that heavy ion irradiation can enhance the wet etching of GaN films at the sites having original defects. The related mechanism was also discussed in this paper.
Pergamon Radiat. Phys. Chem. Vol. 52, Nos I 6, pp. 251 256, 1998 1998 Elsevier Science Ltd. All r... more Pergamon Radiat. Phys. Chem. Vol. 52, Nos I 6, pp. 251 256, 1998 1998 Elsevier Science Ltd. All rights reserved Printed in Great Britain PII: S0969806X(98)001509 0969806X 98 SI9.00 + 0.00 STUDY ON OXIDATION OF POLYMERS TREATED BY HIGH LET ...
Dry and water-imbibed seeds of Arabidopsis thaliana were irradiated by H+ ions with energy in the... more Dry and water-imbibed seeds of Arabidopsis thaliana were irradiated by H+ ions with energy in the range of million electron volt. The inhibition of germination and survival were investigated to study the influence of ion fluence on the state of the seeds. A saddle shape of the fluence - response curve was found. Under the same irradiation conditions, the germination
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