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Physics > Applied Physics

arXiv:1705.04475 (physics)
[Submitted on 12 May 2017]

Title:Resistive switching in MoSe$_{2}$/BaTiO$_{3}$ hybrid structures

Authors:J. P. B. Silva, C. Almeida Marques, J. Agostinho Moreira, O. Conde
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Abstract:Here we study the resistive switching (RS) effect that emerges when ferroelectric BaTiO$_{3}$ (BTO) and few-layers MoSe$_{2}$ are combined in one single structure. The C-V loops reveal the ferroelectric nature of both Al/Si/SiO$_{x}$/BTO/Au and Al/Si/SiO$_{x}$/MoSe$_{2}$/BTO/Au structures and the high quality of the SiO$_{x}$/MoSe$_{2}$ interface in the Al/Si/SiOx/MoSe$_{2}$/Au structure. Al/Si/SiO$_{x}$/MoSe$_{2}$/BTO/Au hybrid structures show the electroforming free resistive switching that is explained on the basis of the modulation of the potential distribution at the MoSe$_{2}$/BTO interface via ferroelectric polarization flipping. This structure shows promising resistive switching characteristics with switching ratio of $\approx{}$10$^{2}$ and a stable memory window, which are highly required for memory applications.
Subjects: Applied Physics (physics.app-ph)
Cite as: arXiv:1705.04475 [physics.app-ph]
  (or arXiv:1705.04475v1 [physics.app-ph] for this version)
  https://doi.org/10.48550/arXiv.1705.04475
Journal reference: J. Mater. Chem. C, 2017,5, 10353-10359
Related DOI: https://doi.org/10.1039/C7TC03024J

Submission history

From: José Silva [view email]
[v1] Fri, 12 May 2017 09:04:36 UTC (626 KB)
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