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Reversibly controlled ternary polar states and ferroelectric bias promoted by boosting square-tensile-strain
Authors:
Jun Han Lee,
Nguyen Xuan Duong,
Min-Hyoung Jung,
Hyun-Jae Lee,
Ahyoung Kim,
Youngki Yeo,
Junhyung Kim,
Gye-Hyeon Kim,
Byeong-Gwan Cho,
Jaegyu Kim,
Furqan Ul Hassan Naqvi,
Jong-Seong Bae,
Jeehoon Kim,
Chang Won Ahn,
Young-Min Kim,
Tae Kwon Song,
Jae-Hyeon Ko,
Tae-Yeong Koo,
Changhee Sohn,
Kibog Park,
Chan-Ho Yang,
Sang Mo Yang,
Jun Hee Lee,
Hu Young Jeong,
Tae Heon Kim
, et al. (1 additional authors not shown)
Abstract:
Interaction between dipoles often emerges intriguing physical phenomena, such as exchange bias in the magnetic heterostructures and magnetoelectric effect in multiferroics, which lead to advances in multifunctional heterostructures. However, the defect-dipole tends to be considered the undesired to deteriorate the electronic functionality. Here, we report deterministic switching between the ferroe…
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Interaction between dipoles often emerges intriguing physical phenomena, such as exchange bias in the magnetic heterostructures and magnetoelectric effect in multiferroics, which lead to advances in multifunctional heterostructures. However, the defect-dipole tends to be considered the undesired to deteriorate the electronic functionality. Here, we report deterministic switching between the ferroelectric and the pinched states by exploiting a new substrate of cubic perovskite, BaZrO$_{3}$, which boosts square-tensile-strain to BaTiO$_{3}$ and promotes four-variants in-plane spontaneous polarization with oxygen vacancy creation. First-principles calculations propose a complex of an oxygen vacancy and two Ti$^{3+}$ ions coins a charge-neutral defect-dipole. Cooperative control of the defect-dipole and the spontaneous polarization reveals ternary in-plane polar states characterized by biased/pinched hysteresis loops. Furthermore, we experimentally demonstrate that three electrically controlled polar-ordering states lead to switchable and non-volatile dielectric states for application of non-destructive electro-dielectric memory. This discovery opens a new route to develop functional materials via manipulating defect-dipoles and offers a novel platform to advance heteroepitaxy beyond the prevalent perovskite substrates.
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Submitted 12 September, 2022;
originally announced September 2022.
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Highly ordered lead-free double perovskite halides by design
Authors:
Chang Won Ahn,
Jae Hun Jo,
Jong Chan Kim,
Hamid Ullah,
Sangkyun Ryu,
Younghun Hwang,
Jin San Choi,
Jongmin Lee,
Sanghan Lee,
Hyoungjeen Jeen,
Young-Han Shin,
Hu Young Jeong,
Ill Won Kim,
Tae Heon Kim
Abstract:
Lead-free double perovskite halides are emerging optoelectronic materials that are alternatives to lead-based perovskite halides. Recently, single-crystalline double perovskite halides were synthesized, and their intriguing functional properties were demonstrated. Despite such pioneering works, lead-free double perovskite halides with better crystallinity are still in demand for applications to no…
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Lead-free double perovskite halides are emerging optoelectronic materials that are alternatives to lead-based perovskite halides. Recently, single-crystalline double perovskite halides were synthesized, and their intriguing functional properties were demonstrated. Despite such pioneering works, lead-free double perovskite halides with better crystallinity are still in demand for applications to novel optoelectronic devices. Here, we realized highly crystalline Cs2AgBiBr6 single crystals with a well-defined atomic ordering on the microscopic scale. We avoided the formation of Ag vacancies and the subsequent secondary Cs3Bi2Br9 by manipulating the initial chemical environments in hydrothermal synthesis. The suppression of Ag vacancies allows us to reduce the trap density in the as-grown crystals and to enhance the carrier mobility further. Our design strategy is applicable for fabricating other lead-free halide materials with high crystallinity.
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Submitted 29 June, 2020;
originally announced June 2020.
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Quantum interference effects in chemical vapor deposited graphene
Authors:
Nam-Hee Kim,
Yun-Sok Shin,
Serin Park,
Hong-Seok Kim,
Jun Sung Lee,
Chi Won Ahn,
Jeong-O Lee,
Yong-Joo Doh
Abstract:
We report several quantum interference effects in graphene grown by chemical vapor deposition. A crossover between weak localization and weak antilocalization effects is observed when varying the gate voltage and we discuss the underlying scattering mechanisms. The characteristic length scale for phase coherence is compared with that estimated from universal conductance fluctuations in the micropo…
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We report several quantum interference effects in graphene grown by chemical vapor deposition. A crossover between weak localization and weak antilocalization effects is observed when varying the gate voltage and we discuss the underlying scattering mechanisms. The characteristic length scale for phase coherence is compared with that estimated from universal conductance fluctuations in the microporeformed graphene sample. These extensive temperature- and gate-dependent measurements of the intervalley and intravalley scattering lengths provide important and useful insight for the macroscopic applications of graphene-based quantum devices.
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Submitted 31 October, 2015;
originally announced November 2015.
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Quantum electrical transport properties of topological insulator Bi2Te3 nanowires
Authors:
Hong-Seok Kim,
Ho Sun Shin,
Joon Sung Lee,
Chi Won Ahn,
Jae Yong Song,
Yong-Joo Doh
Abstract:
We investigate the quantum transport properties of surface electrons on a topological insulator Bi2Te3 nanowire in a magnetotransport study. Although the nanowires are synthesized by using a relatively coarse method of electrochemical deposition, clear Aharonov-Bohm oscillations of phases 0 and pi are observed, owing to the highly coherent surface electron channel. The oscillation amplitude exhibi…
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We investigate the quantum transport properties of surface electrons on a topological insulator Bi2Te3 nanowire in a magnetotransport study. Although the nanowires are synthesized by using a relatively coarse method of electrochemical deposition, clear Aharonov-Bohm oscillations of phases 0 and pi are observed, owing to the highly coherent surface electron channel. The oscillation amplitude exhibits exponential temperature dependence, suggesting that the phase coherence length L_phi is inversely proportional to the temperature, as in quasi-ballistic systems. In addition, a weak antilocalization analysis on the surface channel by using a one-dimensional localization theory, enabled by successful extraction of the surface contribution from the magnetoconductance data, is provided in support of the temperature dependence of L_phi.
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Submitted 31 October, 2015;
originally announced November 2015.
