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A Fermi Surface Descriptor Quantifying the Correlations between Anomalous Hall Effect and Fermi Surface Geometry
Authors:
Elena Derunova,
Jacob Gayles,
Yan Sun,
Michael W. Gaultois,
Mazhar N. Ali
Abstract:
In the last few decades, basic ideas of topology have completely transformed the prediction of quantum transport phenomena. Following this trend, we go deeper into the incorporation of modern mathematics into quantum material science focusing on geometry. Here we investigate the relation between the geometrical type of the Fermi surface and Anomalous and Spin Hall Effects. An index,…
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In the last few decades, basic ideas of topology have completely transformed the prediction of quantum transport phenomena. Following this trend, we go deeper into the incorporation of modern mathematics into quantum material science focusing on geometry. Here we investigate the relation between the geometrical type of the Fermi surface and Anomalous and Spin Hall Effects. An index, $\mathbb{H}_F$, quantifying the hyperbolic geometry of the Fermi surface, shows a universal correlation (R$^2$ = 0.97) with the experimentally measured intrinsic anomalous Hall conductivity, of 16 different compounds spanning a wide variety of crystal, chemical, and electronic structure families, including those where topological methods give R$^2$ = 0.52. This raises a question about the predictive limits of topological physics and its transformation into a wider study of bandstructures' and Fermi surfaces' geometries, opening horizon for prediction of phenomena beyond topological understanding.
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Submitted 22 May, 2024; v1 submitted 10 August, 2023;
originally announced August 2023.
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Quantum states and intertwining phases in kagome materials
Authors:
Yaojia Wang,
Heng Wu,
Gregory T. McCandless,
Julia Y. Chan,
Mazhar N. Ali
Abstract:
In solid materials, nontrivial topological states, electron correlations, and magnetism are central ingredients for realizing quantum properties, including unconventional superconductivity, charge and spin density waves, and quantum spin liquids. The Kagome lattice, made up of connected triangles and hexagons, can host these three ingredients simultaneously and has proven to be a fertile platform…
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In solid materials, nontrivial topological states, electron correlations, and magnetism are central ingredients for realizing quantum properties, including unconventional superconductivity, charge and spin density waves, and quantum spin liquids. The Kagome lattice, made up of connected triangles and hexagons, can host these three ingredients simultaneously and has proven to be a fertile platform for studying diverse quantum phenomena including those stemming from the interplay of these ingredients. In this review, we introduce the fundamental properties of the Kagome lattice as well as discuss the complex observed phenomena seen in several emergent material systems such as the intertwining of charge order and superconductivity in some Kagome metals, modulation of magnetism and topology in some Kagome magnets, and symmetry breaking with Mott physics in the breathing Kagome insulators. We also highlight many open questions in the field as well as future research directions of Kagome systems.
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Submitted 6 March, 2023;
originally announced March 2023.
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Electronic properties and phase transition in Kagome metal, Yb0.5Co3Ge3
Authors:
Yaojia Wang,
Xiaoping Wang,
Gregory T. McCandless,
Kulatheepan Thanabalasingam,
Heng Wu,
Damian Bouwmeester,
Herra van der Zant,
Mazhar N. Ali,
Julia Y. Chan
Abstract:
The Kagome lattice is an important fundamental structure in condensed matter physics for investigating the interplay of electron correlation, topology, and frustrated magnetism. Recent work on Kagome metals in the AV3Sb5 (A = K, Rb, Cs) family, has shown a multitude of correlation-driven distortions, including symmetry breaking charge density waves and nematic superconductivity at low temperatures…
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The Kagome lattice is an important fundamental structure in condensed matter physics for investigating the interplay of electron correlation, topology, and frustrated magnetism. Recent work on Kagome metals in the AV3Sb5 (A = K, Rb, Cs) family, has shown a multitude of correlation-driven distortions, including symmetry breaking charge density waves and nematic superconductivity at low temperatures. Here we study the new Kagome metal Yb0.5Co3Ge3 and find a temperature-dependent kink in the resistivity that is highly similar to the AV3Sb5 behavior and is commensurate with an in-plane structural distortion of the Co Kagome lattice along with a doubling of the c-axis. The space group is found to lower from P6/mmm to P63/m below the transition temperature, breaking the in-plane mirror planes and C6 rotation, while gaining a screw axis along the c-direction. At very low temperatures, anisotropic negative magnetoresistance is observed, which may be related to anisotropic magnetism. This raises questions about the types of the distortions in Kagome nets and their resulting physical properties including superconductivity and magnetism.
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Submitted 27 April, 2022; v1 submitted 20 April, 2022;
originally announced April 2022.
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Realization of the field-free Josephson Diode
Authors:
Heng Wu,
Yaojia Wang,
Yuanfeng Xu,
Pranava K. Sivakumar,
Chris Pasco,
Ulderico Filippozzi,
Stuart S. P. Parkin,
Yu-Jia Zeng,
Tyrel McQueen,
Mazhar N. Ali
Abstract:
The superconducting analog to the semiconducting diode, the Josephson diode, has long been sought, with multiple avenues to realization proposed by theorists. Exhibiting magnetic-field free, single directional superconductivity with Josephson coupling of the supercurrent across a tunnel barrier, it would serve as the building-block for next-generation superconducting circuit technology. Here we re…
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The superconducting analog to the semiconducting diode, the Josephson diode, has long been sought, with multiple avenues to realization proposed by theorists. Exhibiting magnetic-field free, single directional superconductivity with Josephson coupling of the supercurrent across a tunnel barrier, it would serve as the building-block for next-generation superconducting circuit technology. Here we realized the field-free Josephson diode using an inversion symmetry breaking heterostructure of $\mathrm{NbSe_2/Nb_3Br_8/NbSe_2}$. We demonstrate, for the first time without magnetic field, the junction can be superconducting in one direction while normal in the opposite direction. Based on that, half-wave rectification of a square-wave excitation was achieved with low switching current density ($~2.2\times 10^2 \mathrm{A/cm^2}$), high rectification ratio ($~10^4$) and high robustness (at least $10^4$ cycles). We also demonstrate symmetric $ΔI_\mathrm{c}$ (the difference between positive and negative critical currents) behavior with field and the expected Fraunhofer current phase relation of a Josephson junction. This realization raises fundamental questions about the Josephson effect through an insulator when breaking symmetry, and opens the door to ultralow power, high speed, superconducting circuits for logic and signal modulation.
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Submitted 24 March, 2022; v1 submitted 29 March, 2021;
originally announced March 2021.
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Spin-orbit Torque Switching in an All-Van der Waals Heterostructure
Authors:
Inseob Shin,
Won Joon Cho,
Eun-Su An,
Sungyu Park,
Hyeon-Woo Jeong,
Seong Jang,
Woon Joong Baek,
Seong Yong Park,
Dong-Hwan Yang,
Jun Ho Seo,
Gi-Yeop Kim,
Mazhar N. Ali,
Si-Young Choi,
Hyun-Woo Lee,
Jun Sung Kim,
Sungdug Kim,
Gil-Ho Lee
Abstract:
Current-induced control of magnetization in ferromagnets using spin-orbit torque (SOT) has drawn attention as a new mechanism for fast and energy efficient magnetic memory devices. Energy-efficient spintronic devices require a spin-current source with a large SOT efficiency ($ξ$) and electrical conductivity ($σ$), and an efficient spin injection across a transparent interface. Herein, we use singl…
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Current-induced control of magnetization in ferromagnets using spin-orbit torque (SOT) has drawn attention as a new mechanism for fast and energy efficient magnetic memory devices. Energy-efficient spintronic devices require a spin-current source with a large SOT efficiency ($ξ$) and electrical conductivity ($σ$), and an efficient spin injection across a transparent interface. Herein, we use single crystals of the van der Waals (vdW) topological semimetal WTe$_2$ and vdW ferromagnet Fe$_3$GeTe$_2$ to satisfy the requirements in their all-vdW-heterostructure with an atomically sharp interface. The results exhibit values of $ξ{\approx}4.6$ and $σ{\approx}2.25{\times}10^5 Ω^{-1} m^{-1}$ for WTe$_2$. Moreover, we obtain the significantly reduced switching current density of $3.90{\times}10^6 A/cm^2$ at 150 K, which is an order of magnitude smaller than those of conventional heavy-metal/ ferromagnet thin films. These findings highlight that engineering vdW-type topological materials and magnets offers a promising route to energy-efficient magnetization control in SOT-based spintronics.
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Submitted 18 February, 2021;
originally announced February 2021.
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Anisotropic proximity-induced superconductivity and edge supercurrent in Kagome metal, K1-xV3Sb5
Authors:
Yaojia Wang,
Shuoying Yang,
Pranava K. Sivakumar,
Brenden R. Ortiz,
Samuel M. L. Teicher,
Heng Wu,
Abhay K. Srivastava,
Chirag Garg,
Defa Liu,
Stuart S. P. Parkin,
Eric S. Toberer,
Tyrel McQueen,
Stephen D. Wilson,
Mazhar N. Ali
Abstract:
Materials with transition metals in triangular lattices are of great interest for their potential combination of strong correlation, exotic magnetism and electronic topology. Kagome nets are of particular importance since the discovery of geometrically frustrated magnetism and topological band structures in crystals like Herbertsmithite and Fe3Sn2, respectively. KV3Sb5 was discovered to be a layer…
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Materials with transition metals in triangular lattices are of great interest for their potential combination of strong correlation, exotic magnetism and electronic topology. Kagome nets are of particular importance since the discovery of geometrically frustrated magnetism and topological band structures in crystals like Herbertsmithite and Fe3Sn2, respectively. KV3Sb5 was discovered to be a layered topological metal with a Kagome net of vanadium. Here, we fabricated Josephson Junctions (JJ) of K1-xV3Sb5 and induced superconductivity over long junction lengths. Through magnetoresistance and current vs. phase measurements, we observed magnetic field sweeping direction dependent magnetoresistance, and an anisotropic interference pattern with a Fraunhofer pattern for in-plane magnetic field, but a suppression of critical current for out-of-plane magnetic field. These results indicate an anisotropic internal magnetic field in K1-xV3Sb5 which influences the superconducting coupling in the junction, possibly giving rise to spin-triplet superconductivity. In addition, the observation of long-lived fast oscillations shows evidence of spatially localized conducting channels arising from edge states. These observations pave the way for studying unconventional superconductivity and Josephson device based on Kagome metals with electron correlation and topology.
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Submitted 26 January, 2023; v1 submitted 10 December, 2020;
originally announced December 2020.
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Hard Magnetic Topological Semimetals in XPt3: Harmony of Berry Curvature
Authors:
Anastasios Markou,
Jacob Gayles,
Elena Derunova,
Peter Swekis,
Jonathan Noky,
Liguo Zhang,
Mazhar N. Ali,
Yan Sun,
Claudia Felser
Abstract:
Topological magnetic semimetals, like Co3Sn2S2 and Co2MnGa, are known to display exotic transport properties, such as large intrinsic anomalous (AHE) due to uncompensated Berry curvature. The highly symmetric XPt3 compounds display anti-crossing gapped nodal lines, which are a driving mechanism in the intrinsic Berry curvature Hall effects. Uniquely, these compounds contain two sets of gapped noda…
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Topological magnetic semimetals, like Co3Sn2S2 and Co2MnGa, are known to display exotic transport properties, such as large intrinsic anomalous (AHE) due to uncompensated Berry curvature. The highly symmetric XPt3 compounds display anti-crossing gapped nodal lines, which are a driving mechanism in the intrinsic Berry curvature Hall effects. Uniquely, these compounds contain two sets of gapped nodal lines that harmoniously dominate the Berry curvature in this complex multiband system. We calculate a maximum AHE of 1965 S/cm in the CrPt3 by a state-of-the-art first principle electronic structure. We have grown high-quality thin films by magnetron sputtering and measured a robust AHE of 1750 S/cm for different sputtering growth conditions. Additionally, the cubic films display a hard magnetic axis along [111] direction. The facile and scalable fabrication of these materials is prime candidates for integration into topological devices.
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Submitted 27 August, 2020;
originally announced August 2020.
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Fermi Surface Geometry
Authors:
Elena Derunova,
Jacob Gayles,
Yan Sun,
Michael W. Gaultois,
Mazhar N. Ali
Abstract:
Motivated by the famous and pioneering mathematical works by Perelman, Hamilton, and Thurston, we introduce the concept of using modern geometrical mathematical classifications of multi-dimensional manifolds to characterize electronic structures and predict non-trivial electron transport phenomena. Here we develop the Fermi Surface Geometry Effect (FSGE), using the concepts of tangent bundles and…
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Motivated by the famous and pioneering mathematical works by Perelman, Hamilton, and Thurston, we introduce the concept of using modern geometrical mathematical classifications of multi-dimensional manifolds to characterize electronic structures and predict non-trivial electron transport phenomena. Here we develop the Fermi Surface Geometry Effect (FSGE), using the concepts of tangent bundles and Gaussian curvature as an invariant. We develop an index, $\mathbb{H}_F$, for describing the the "hyperbolicity" of the Fermi Surface (FS) and show a universal correlation (R$^2$ = 0.97) with the experimentally measured intrinsic anomalous Hall effect of 16 different compounds spanning a wide variety of crystal, chemical, and electronic structure families, including where current methods have struggled. This work lays the foundation for developing a complete theory of geometrical understanding of electronic (and by extension magnonic and phononic) structure manifolds, beginning with Fermi surfaces. In analogy to the broad impact of topological physics, the concepts begun here will have far reaching consequences and lead to a paradigm shift in the understanding of electron transport, moving it to include geometrical properties of the E vs k manifold as well as topological properties.
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Submitted 14 July, 2020; v1 submitted 10 July, 2020;
originally announced July 2020.
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Doping-induced spin Hall ratio enhancement in A15-phase, Ta-doped Beta-W thin films
Authors:
Mohsin Z. Minhas,
Avanindra K. Pandeya,
Bharat Grover,
Alessandro Fumarola,
Ilya Kostanovskiy,
Wolfgang Hoppe,
Georg Woltersdorf,
Amilcar Bedoya-Pinto,
Stuart S. P. Parkin,
Mazhar N. Ali
Abstract:
As spintronic devices become more and more prevalent, the desire to find Pt free materials with large spin Hall effects is increasing. Previously it was shown that Beta W, the metastable A15 structured variant of pure W, has charge-spin conversion efficiencies on par with Pt, and it was predicted that Beta W(Ta) alloys should be even more efficient. Here we demonstrate the enhancement of the spin…
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As spintronic devices become more and more prevalent, the desire to find Pt free materials with large spin Hall effects is increasing. Previously it was shown that Beta W, the metastable A15 structured variant of pure W, has charge-spin conversion efficiencies on par with Pt, and it was predicted that Beta W(Ta) alloys should be even more efficient. Here we demonstrate the enhancement of the spin Hall ratio (SHR) in A15-phase Beta W films doped with Ta (W(4-x)Tax where x is between 0.28 and 0.4, deposited at room temperature using DC magnetron co-sputtering. In close agreement with theoretical predictions, we find that the SHR of the doped films was approx. 9 percent larger than pure Beta W films. We also found that the SHRs in devices with Co2Fe6B2 were nearly twice as large as the SHRs in devices with Co4Fe4B2. This work shows that by optimizing deposition parameters and substrates, the fabrication of the optimum W3Ta alloy should be feasible, opening the door to commercially viable, Pt free, spintronic devices.
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Submitted 18 May, 2020; v1 submitted 15 May, 2020;
originally announced May 2020.
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Anomalous, anomalous Hall effect in the layered, Kagome, Dirac semimetal KV$_3$Sb$_5$
Authors:
Shuo-Ying Yang,
Yaojia Wang,
Brenden R. Ortiz,
Defa Liu,
Jacob Gayles,
Elena Derunova,
Rafael Gonzalez-Hernandez,
Libor Smejkal,
Yulin Chen,
Stuart S. P. Parkin,
Stephen D. Wilson,
Eric S. Toberer,
Tyrel McQueen,
Mazhar N. Ali
Abstract:
The electronic anomalous Hall effect (AHE), where charge carriers acquire a velocity component orthogonal to an applied electric field, is one of the most fundamental and widely studied phenomena in physics. There are several different AHE mechanisms known, and material examples are highly sought after, however in the highly conductive (skew scattering) regime the focus has centered around ferroma…
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The electronic anomalous Hall effect (AHE), where charge carriers acquire a velocity component orthogonal to an applied electric field, is one of the most fundamental and widely studied phenomena in physics. There are several different AHE mechanisms known, and material examples are highly sought after, however in the highly conductive (skew scattering) regime the focus has centered around ferromagnetic metals. Here we report the observation of a giant extrinsic AHE in KV$_3$Sb$_5$, an exfoliable, Dirac semimetal with a Kagome layer of Vanadium atoms. Although there has been no reports of magnetic ordering down to 0.25 K, the anomalous Hall conductivity (AHC) reaches $\approx$ 15,507 $Ω^{-1}$cm$^{-1}$ with an anomalous Hall ratio (AHR) of $\approx$ 1.8$ \%$; an order of magnitude larger than Fe. Defying expectations from skew scattering theory, KV$_3$Sb$_5$ shows an enhanced skew scattering effect that scales quadratically, not linearly, with the longitudinal conductivity ($σ_{xx}$), opening the possibility of reaching an anomalous Hall angle (AHA) of 90$^{\circ}$ in metals; an effect thought reserved for quantum anomalous Hall insulators. This observation raises fundamental questions about the AHE and opens a new frontier for AHE (and correspondingly SHE) exploration, stimulating investigation in a new direction of materials, including metallic geometrically frustrated magnets, spin-liquid candidates, and cluster magnets.
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Submitted 27 December, 2019;
originally announced December 2019.
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Anomalous thickness-dependent electrical conductivity in van der Waals layered transition metal halide, Nb_3Cl_8
Authors:
Jiho Yoon,
Edouard Lesne,
Kornelia Sklarek,
John Sheckelton,
Chris Pasco,
Stuart S. P. Parkin,
Tyrel M. McQueen,
Mazhar N. Ali
Abstract:
Understanding the electronic transport properties of layered, van der Waals transition metal halides (TMHs) and chalcogenides is a highly active research topic today. Of particular interest is the evolution of those properties with changing thickness as the 2D limit is approached. Here, we present the electrical conductivity of exfoliated single crystals of the TMH, cluster magnet, Nb3Cl8, over a…
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Understanding the electronic transport properties of layered, van der Waals transition metal halides (TMHs) and chalcogenides is a highly active research topic today. Of particular interest is the evolution of those properties with changing thickness as the 2D limit is approached. Here, we present the electrical conductivity of exfoliated single crystals of the TMH, cluster magnet, Nb3Cl8, over a wide range of thicknesses both with and without hexagonal boron nitride (hBN) encapsulation. The conductivity is found to increase by more than three orders of magnitude when the thickness is decreased from 280 μm to 5 nm, at 300 K. At low temperatures and below ~50 nm, the conductance becomes thickness independent, implying surface conduction is dominating. Temperature dependent conductivity measurements indicate Nb3Cl8 is an insulator, however the effective activation energy decreases from a bulk value of 310 meV to 140 meV by 5nm. X-ray photoelectron spectroscopy (XPS) shows mild surface oxidation in devices without hBN capping, however, no significant difference in transport is observed when compared to the capped devices, implying the thickness dependent transport behavior is intrinsic to the material. A conduction mechanism comprised of a higher conductivity surface channel in parallel with a lower conductivity interlayer channel is discussed.
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Submitted 13 November, 2019;
originally announced November 2019.
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Evidence of Higher Order Topology in Multilayer WTe$_2$ from Josephson Coupling through Anisotropic Hinge States
Authors:
Yong-Bin Choi,
Yingming Xie,
Chui-Zhen Chen,
Jin-Ho Park,
Su-Beom Song,
Jiho Yoon,
Bum Joon Kim,
Takashi Taniguchi,
Kenji Watanabe,
Hu-Jong Lee,
Jong-Hwan Kim,
Kin Chung Fong,
Mazhar N. Ali,
Kam Tuen Law,
Gil-Ho Lee
Abstract:
The noncentrosymmetric Td-WTe$_2$, previously known as a type-II Weyl semimetal, is expected to have higher order topological phases with topologically protected, helical one-dimensional (1D) hinge states when their scarcely separated Weyl points get annihilated. However, the detection of these hinge states is difficult in the presence of the semimetallic behaviour of the bulk. Here, we spatially…
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The noncentrosymmetric Td-WTe$_2$, previously known as a type-II Weyl semimetal, is expected to have higher order topological phases with topologically protected, helical one-dimensional (1D) hinge states when their scarcely separated Weyl points get annihilated. However, the detection of these hinge states is difficult in the presence of the semimetallic behaviour of the bulk. Here, we spatially resolved the hinge states by analysing the magnetic field interference of supercurrent in Nb-WTe$_2$-Nb proximity Josephson junctions. The Josephson current along the a-axis of the WTe$_2$ crystal, but not along the b-axis, showed sharp enhancements at the edges of the junction; the amount of enhanced Josephson current was comparable to the upper limits of a single 1D conduction channel. Our experimental observations provide evidence of the higher order topological phase in WTe$_2$ and its corresponding anisotropic topological hinge states, in good agreement with theoretical calculations. Our work paves the way for hinge transport studies on topological semimetals in superconducting heterostructures, including their topological superconductivity.
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Submitted 6 September, 2019; v1 submitted 5 September, 2019;
originally announced September 2019.
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Giant Intrinsic Spin Hall Effect in W$_3$Ta and other A15 Superconductors
Authors:
E. Derunova,
Y. Sun,
C. Felser,
S. S. P. Parkin,
B. Yan,
M. N. Ali
Abstract:
The spin Hall effect (SHE) is the conversion of charge current to spin current, and non-magnetic metals with large SHEs are extremely sought after for spintronic applications, but their rarity has stifled widespread use. Here we predict and explain the large intrinsic SHE in $β$-W and the A15 family of superconductors: W$_3$Ta, Ta$_3$Sb, and Cr$_3$Ir having spin hall conductivities (SHC) of -2250,…
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The spin Hall effect (SHE) is the conversion of charge current to spin current, and non-magnetic metals with large SHEs are extremely sought after for spintronic applications, but their rarity has stifled widespread use. Here we predict and explain the large intrinsic SHE in $β$-W and the A15 family of superconductors: W$_3$Ta, Ta$_3$Sb, and Cr$_3$Ir having spin hall conductivities (SHC) of -2250, -1400, and 1210 $\frac{\hbar}{e}(Ωcm)^{-1}$, respectively. Combining concepts from topological physics with the dependence of the SHE on the spin Berry curvature (SBC) of the electronic bands, we propose a simple strategy to rapidly search for materials with large intrinsic SHEs based on the following ideas: high symmetry combined with heavy atoms gives rise to multiple Dirac-like crossings in the electronic structure, without sufficient symmetry protection these crossings gap due to spin orbit coupling (SOC), and gapped Dirac crossings create large spin Berry curvature.
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Submitted 1 October, 2018;
originally announced October 2018.
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A Proposal to Detect Dark Matter Using Axionic Topological Antiferromagnets
Authors:
David J. E. Marsh,
Kin-Chung Fong,
Erik W. Lentz,
Libor Šmejkal,
Mazhar N. Ali
Abstract:
Antiferromagnetically doped topological insulators (A-TI) are among the candidates to host dynamical axion fields and axion-polaritons; weakly interacting quasiparticles that are analogous to the dark axion, a long sought after candidate dark matter particle. Here we demonstrate that using the axion quasiparticle antiferromagnetic resonance in A-TI's in conjunction with low-noise methods of detect…
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Antiferromagnetically doped topological insulators (A-TI) are among the candidates to host dynamical axion fields and axion-polaritons; weakly interacting quasiparticles that are analogous to the dark axion, a long sought after candidate dark matter particle. Here we demonstrate that using the axion quasiparticle antiferromagnetic resonance in A-TI's in conjunction with low-noise methods of detecting THz photons presents a viable route to detect axion dark matter with mass 0.7 to 3.5 meV, a range currently inaccessible to other dark matter detection experiments and proposals. The benefits of this method at high frequency are the tunability of the resonance with applied magnetic field, and the use of A-TI samples with volumes much larger than 1 mm$^3$.
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Submitted 8 August, 2019; v1 submitted 19 July, 2018;
originally announced July 2018.
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Strong Electron-Phonon Coupling Superconductivity Induced by a Low-lying Phonon in IrGe
Authors:
Daigorou Hirai,
Mazhar. N. Ali,
R. J. Cava
Abstract:
The physical properties of the previously reported superconductor IrGe and the Rh1-xIrxGe solid solution are investigated. IrGe has an exceptionally high superconducting transition temperature (Tc = 4.7 K) among the isostructural 1:1 late-metal germanides MGe (M = Rh, Pd, Ir and Pt). Specific-heat measurements reveal that IrGe has an anomalously low Debye temperature, originating from a low-lying…
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The physical properties of the previously reported superconductor IrGe and the Rh1-xIrxGe solid solution are investigated. IrGe has an exceptionally high superconducting transition temperature (Tc = 4.7 K) among the isostructural 1:1 late-metal germanides MGe (M = Rh, Pd, Ir and Pt). Specific-heat measurements reveal that IrGe has an anomalously low Debye temperature, originating from a low-lying phonon, compared to the other MGe phases. A large jump at Tc in the specific-heat data clearly indicates that IrGe is a strong coupling superconductor. In the Rh1-xIrxGe solid solution, a relationship between an anomalous change in lattice constants and the Debye temperature is observed. We conclude that the unusually high Tc for IrGe is likely due to strong electron-phonon coupling derived from the presence of a low-lying phonon.
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Submitted 19 March, 2018;
originally announced March 2018.
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Symmetry Demanded Topological Nodal-line Materials
Authors:
Shuo-Ying Yang,
Hao Yang,
Elena Derunova,
Stuart S. P. Parkin,
Binghai Yan,
Mazhar N. Ali
Abstract:
The realization of Dirac and Weyl physics in solids has made topological materials one of the main focuses of condensed matter physics. Recently, the topic of topological nodal line semimetals, materials in which Dirac or Weyl-like crossings along special lines in momentum space create either a closed ring or line of degeneracies, rather than discrete points, has become a hot topic in topological…
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The realization of Dirac and Weyl physics in solids has made topological materials one of the main focuses of condensed matter physics. Recently, the topic of topological nodal line semimetals, materials in which Dirac or Weyl-like crossings along special lines in momentum space create either a closed ring or line of degeneracies, rather than discrete points, has become a hot topic in topological quantum matter. Here we review the experimentally confirmed and theoretically predicted topological nodal line semimetals, focusing in particular on the symmetry protection mechanisms of the nodal lines in various materials. Three different mechanisms: a combination of inversion and time-reversal symmetry, mirror reflection symmetry, and non-symmorphic symmetry, and their robustness under the effect of spin orbit coupling are discussed. We also present a new Weyl nodal line material, the Te-square net compound KCu$_2$EuTe$_4$, which has several Weyl nodal lines including one extremely close to the Fermi level ($<$30 meV below E$_F$). Finally, we discuss potential experimental signatures for observing exotic properties of nodal line physics.
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Submitted 1 November, 2017; v1 submitted 14 July, 2017;
originally announced July 2017.
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Three-Dimensional Electronic Structure of type-II Weyl Semimetal WTe$_2$
Authors:
Domenico Di Sante,
Pranab Kumar Das,
C. Bigi,
Z. Ergönenc,
N. Gürtler,
J. A. Krieger,
T. Schmitt,
M. N. Ali,
G. Rossi,
R. Thomale,
C. Franchini,
S. Picozzi,
J. Fujii,
V. N. Strocov,
G. Sangiovanni,
I. Vobornik,
R. J. Cava,
G. Panaccione
Abstract:
By combining bulk sensitive soft-X-ray angular-resolved photoemission spectroscopy and accurate first-principles calculations we explored the bulk electronic properties of WTe$_2$, a candidate type-II Weyl semimetal featuring a large non-saturating magnetoresistance. Despite the layered geometry suggesting a two-dimensional electronic structure, we find a three-dimensional electronic dispersion. W…
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By combining bulk sensitive soft-X-ray angular-resolved photoemission spectroscopy and accurate first-principles calculations we explored the bulk electronic properties of WTe$_2$, a candidate type-II Weyl semimetal featuring a large non-saturating magnetoresistance. Despite the layered geometry suggesting a two-dimensional electronic structure, we find a three-dimensional electronic dispersion. We report an evident band dispersion in the reciprocal direction perpendicular to the layers, implying that electrons can also travel coherently when crossing from one layer to the other. The measured Fermi surface is characterized by two well-separated electron and hole pockets at either side of the $Γ$ point, differently from previous more surface sensitive ARPES experiments that additionally found a significant quasiparticle weight at the zone center. Moreover, we observe a significant sensitivity of the bulk electronic structure of WTe$_2$ around the Fermi level to electronic correlations and renormalizations due to self-energy effects, previously neglected in first-principles descriptions.
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Submitted 17 February, 2017;
originally announced February 2017.
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Butterfly Magnetoresistance, Quasi-2D Dirac Fermi Surfaces, and a Topological Phase Transition in ZrSiS
Authors:
Mazhar N. Ali,
Leslie M. Schoop,
Chirag Garg,
Judith M. Lippmann,
Eric Lara,
Bettina Lotsch,
Stuart Parkin
Abstract:
Magnetoresistance (MR), the change of a material's electrical resistance in response to an applied magnetic field, is a technologically important property that has been the topic of intense study for more than a quarter century. Here we report the observation of an unusual "butterfly" shaped titanic angular magnetoresistance (AMR) in the non-magnetic, Dirac material, ZrSiS. The MR is large and pos…
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Magnetoresistance (MR), the change of a material's electrical resistance in response to an applied magnetic field, is a technologically important property that has been the topic of intense study for more than a quarter century. Here we report the observation of an unusual "butterfly" shaped titanic angular magnetoresistance (AMR) in the non-magnetic, Dirac material, ZrSiS. The MR is large and positive, reaching nearly 1.8 x 10^5 percent at 9 T and 2 K at an angle of 45o between the applied current (along the a-axis) and the applied field (90o is H parallel to the c-axis). Approaching 90o, a "dip" is seen in the AMR which can be traced to an angle dependent deviation from the H^2 law. By analyzing the SdH oscillations at different angles, we find that ZrSiS has a combination of 2D and 3D Dirac pockets comprising its Fermi surface and that the anomalous transport behavior coincides with a topological phase transition whose robust signature is evident despite transport contributions from other parts of the Fermi surface. We also find that as a function of angle, the temperature dependent resistivity in high field displays a broad peak-like behavior, unlike any known Dirac/Weyl material. The combination of very high mobility carriers and multiple Fermi surfaces in ZrSiS allow for large bulk property changes to occur as a function of angle between applied fields makes it a promising platform to study the physics stemming from the coexistence of 2D and 3D Dirac electrons.
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Submitted 31 March, 2016; v1 submitted 30 March, 2016;
originally announced March 2016.
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Dirac Cone Protected by Non-Symmorphic Symmetry and 3D Dirac Line Node in ZrSiS
Authors:
Leslie M. Schoop,
Mazhar N. Ali,
Carola Straßer,
Viola Duppel,
Stuart S. P. Parkin,
Bettina V. Lotsch,
Christian R. Ast
Abstract:
Materials harboring exotic quasiparticles, such as Dirac and Weyl fermions\cite{xu2015discovery,borisenko2015time,weng2015weyl,xu2015observation}, have garnered much attention from the physics and material science communities. These fermions are massless and, in some materials, have shown exceptional physical properties such as ultrahigh mobility and extremely large magnetoresistances \cite{liang2…
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Materials harboring exotic quasiparticles, such as Dirac and Weyl fermions\cite{xu2015discovery,borisenko2015time,weng2015weyl,xu2015observation}, have garnered much attention from the physics and material science communities. These fermions are massless and, in some materials, have shown exceptional physical properties such as ultrahigh mobility and extremely large magnetoresistances \cite{liang2015ultrahigh,ali2014large,du2015unsaturated,shekhar2015large}. Recently, new materials have been predicted to exist which exhibit line nodes of Dirac cones \cite{PhysRevLett.115.036806,xie2015new,burkov2011topological,rhim2015landau}. Here, we show with angle resolved photoemission studies supported by \textit{ab initio} calculations that the highly stable, non-toxic and earth-abundant material, ZrSiS, has an electronic band structure that hosts several Dirac cones which form a Fermi surface with a diamond-shaped line of Dirac nodes. We also experimentally show, for the first time, that the square Si lattice in ZrSiS is an excellent template for realizing the new types of 2D Dirac cones recently predicted by Young and Kane \cite{young2015dirac} and image an unforseen surface state that arises close to the 2D Dirac cone. Finally, we find that the energy range of the linearly dispersed bands is as high as 2\,eV above and below the Fermi level; much larger than of any known Dirac material so far. This makes ZrSiS a very promising candidate to study the exotic behavior of Dirac electrons, or Weyl fermions if a magnetic field is applied, as well as the properties of lines of Dirac nodes
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Submitted 2 September, 2015;
originally announced September 2015.
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Superconductivity in Weyl Semimetal Candidate MoTe2
Authors:
Yanpeng Qi,
Pavel G. Naumov,
Mazhar N. Ali,
Catherine R. Rajamathi,
Oleg Barkalov,
Michael Hanfland,
Shu-Chun Wu,
Chandra Shekhar,
Yan Sun,
Vicky Süß,
Marcus Schmidt,
Eckhard Pippel,
Peter Werner,
Reinald Hillebrand,
Tobias Förster,
Erik Kampertt,
Walter Schnelle,
Stuart Parkin,
R. J. Cava,
Claudia Felser,
Binghai Yan,
Sergiy A. Medvedev
Abstract:
In recent years, layered transition-metal dichalcogenides (TMDs) have attracted considerable attention because of their rich physics; for example, these materials exhibit superconductivity, charge density waves, and the valley Hall effect. As a result, TMDs have promising potential applications in electronics, catalysis, and spintronics. Despite the fact that the majority of related research focus…
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In recent years, layered transition-metal dichalcogenides (TMDs) have attracted considerable attention because of their rich physics; for example, these materials exhibit superconductivity, charge density waves, and the valley Hall effect. As a result, TMDs have promising potential applications in electronics, catalysis, and spintronics. Despite the fact that the majority of related research focuses on semiconducting TMDs (e.g., MoS2), the characteristics of WTe2 are provoking strong interest in semimetallic TMDs with extremely large magnetoresistance, pressure-driven superconductivity, and the predicted Weyl semimetal (WSM) state. In this work, we investigate the sister compound of WTe2, MoTe2, which is also predicted to be a WSM and a quantum spin Hall insulator in bulk and monolayer form, respectively. We find that MoTe2 exhibits superconductivity with a resistive transition temperature Tc of 0.1 K. The application of a small pressure (such as 0.4 GPa) is shown to dramatically enhance the Tc, with a maximum value of 8.2 K being obtained at 11.7 GPa (a more than 80-fold increase in Tc). This yields a dome-shaped superconducting phase diagram. Further explorations into the nature of the superconductivity in this system may provide insights into the interplay between strong correlations and topological physics.
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Submitted 2 March, 2016; v1 submitted 14 August, 2015;
originally announced August 2015.
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Prediction of the Weyl semimetal in the orthorhombic MoTe2
Authors:
Yan Sun,
Shu-Chun Wu,
Mazhar N. Ali,
Claudia Felser,
Binghai Yan
Abstract:
We investigate the orthorhombic phase (Td) of layered transition-metal-dichalcogenide MoTe$_2$ as a Weyl semimetal candidate, which was discovered to be a superconductor in our recent experiment. MoTe$_2$ exhibits four pairs of Weyl points lying slightly ($\sim$ 6 meV) above the Fermi energy in the bulk band structure. Unlike its cousin WTe$_2$, which was predicted to be a type-II Weyl semimetal r…
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We investigate the orthorhombic phase (Td) of layered transition-metal-dichalcogenide MoTe$_2$ as a Weyl semimetal candidate, which was discovered to be a superconductor in our recent experiment. MoTe$_2$ exhibits four pairs of Weyl points lying slightly ($\sim$ 6 meV) above the Fermi energy in the bulk band structure. Unlike its cousin WTe$_2$, which was predicted to be a type-II Weyl semimetal recently, the spacing between each pair of Weyl points is found to be as large as 4 percent of the reciprocal lattice in MoTe$_2$ (six times larger than that of WTe$_2$). When projected to the surface, Weyl points are connected by Fermi arcs, which can be easily verified by ARPES due to the large Weyl point separation. In addition, we show that the correlation effect or strain can drive MoTe$_2$ from the type-II to type-I Weyl semimetal.
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Submitted 29 September, 2015; v1 submitted 14 August, 2015;
originally announced August 2015.
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Time-Reversal Symmetry Breaking Type-II Weyl State in YbMnBi2
Authors:
Sergey Borisenko,
Daniil Evtushinsky,
Quinn Gibson,
Alexander Yaresko,
Timur Kim,
M. N. Ali,
Bernd Buechner,
Moritz Hoesch,
Robert J. Cava
Abstract:
Detection of Dirac, Majorana and Weyl fermions in real materials may significantly strengthen the bridge between high-energy and condensed-matter physics. While the presence of Dirac fermions is well established in graphene and topological insulators, Majorana particles have been reported recently and evidence for Weyl fermions in non-centrosymmetric crystals has been found only a couple of months…
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Detection of Dirac, Majorana and Weyl fermions in real materials may significantly strengthen the bridge between high-energy and condensed-matter physics. While the presence of Dirac fermions is well established in graphene and topological insulators, Majorana particles have been reported recently and evidence for Weyl fermions in non-centrosymmetric crystals has been found only a couple of months ago, the 'magnetic' Weyl fermions are still elusive despite numerous theoretical predictions and intense experimental search. In order to detect a time-reversal symmetry breaking Weyl state we designed two materials with Fermi velocities superior to that of graphene and present here the experimental evidence of the realization of such a state in one of them, YbMnBi2. We model the time reversal symmetry breaking observed by magnetization measurements by a canted antiferromagnetic state and find a number of Weyl points both above and below the Fermi level. Using angle-resolved photoemission, we directly observe these latter Weyl points and a hallmark of the exotic state - the arc of the surface states which connects these points. Our results not only provide a fundamental link between the two areas of physics, but also demonstrate the practical way to design novel materials with exotic properties.
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Submitted 30 March, 2016; v1 submitted 17 July, 2015;
originally announced July 2015.
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Correlation of Crystal Quality and Extreme Magnetoresistance of WTe$_2$
Authors:
Mazhar N. Ali,
Leslie Schoop,
Jun Xiong,
Steven Flynn,
Quinn Gibson,
Max Hirschberger,
N. P. Ong,
R. J. Cava
Abstract:
High quality single crystals of WTe$_2$ were grown using a Te flux followed by a cleaning step involving self-vapor transport. The method is reproducible and yields consistently higher quality single crystals than are typically obtained via halide assisted vapor transport methods. Magnetoresistance (MR)values at 9 Tesla and 2 Kelvin as high as 1.75 million \%, nearly an order of magnitude higher t…
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High quality single crystals of WTe$_2$ were grown using a Te flux followed by a cleaning step involving self-vapor transport. The method is reproducible and yields consistently higher quality single crystals than are typically obtained via halide assisted vapor transport methods. Magnetoresistance (MR)values at 9 Tesla and 2 Kelvin as high as 1.75 million \%, nearly an order of magnitude higher than previously reported for this material, were obtained on crystals with residual resistivity ratio (RRR) of approximately 1250. The MR follows a near B$^2$ law (B = 1.95(1)) and, assuming a semiclassical model, the average carrier mobility for the highest quality crystal was found to be ~167,000 cm$^2$/Vs at 2 K. A correlation of RRR, MR ratio and average carrier mobility ($μ_{avg}$) is found with the cooling rate during the flux growth.
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Submitted 15 June, 2015;
originally announced June 2015.
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Optical properties of the perfectly compensated semimetal WTe$_2$
Authors:
C. C. Homes,
M. N. Ali,
R. J. Cava
Abstract:
The optical properties of layered tungsten ditelluride have been measured over a wide temperature and frequency range for light polarized in the $a$-$b$ planes. A striking low-frequency plasma edge develops in the reflectance at low temperature where this material is a perfectly compensated semimetal. The optical conductivity is described using a two-Drude model which treats the electron and hole…
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The optical properties of layered tungsten ditelluride have been measured over a wide temperature and frequency range for light polarized in the $a$-$b$ planes. A striking low-frequency plasma edge develops in the reflectance at low temperature where this material is a perfectly compensated semimetal. The optical conductivity is described using a two-Drude model which treats the electron and hole pockets as separate electronic subsystems. At low temperature, one scattering rate collapses by over two orders of magnitude, while the other also undergoes a significant, but less dramatic, decrease; both scattering rates appear to display the quadratic temperature dependence expected for a Fermi liquid. First principles electronic structure calculations reveal that the low-lying optical excitations are due to direct transitions between the bands associated with the electron and hole pockets.
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Submitted 22 September, 2015; v1 submitted 8 June, 2015;
originally announced June 2015.
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Z$_2$ topology and superconductivity from symmetry lowering of a 3D Dirac Metal Au$_2$Pb
Authors:
Leslie M. Schoop,
Lilia S. Xie,
Ru Chen,
Quinn D. Gibson,
Saul H. Lapidus,
Itamar Kimchi,
Max Hirschberger,
Neel Haldolaarachchige,
Mazhar N. Ali,
Carina A. Belvin,
Tian Liang,
Jeffrey B. Neaton,
N. P. Ong,
Ashvin Vishwanath,
R. J. Cava
Abstract:
3D Dirac semi-metals (DSMs) are materials that have massless Dirac electrons and exhibit exotic physical properties It has been suggested that structurally distorting a DSM can create a Topological Insulator (TI), but this has not yet been experimentally verified. Furthermore, quasiparticle excitations known as Majorana Fermions have been theoretically proposed to exist in materials that exhibit s…
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3D Dirac semi-metals (DSMs) are materials that have massless Dirac electrons and exhibit exotic physical properties It has been suggested that structurally distorting a DSM can create a Topological Insulator (TI), but this has not yet been experimentally verified. Furthermore, quasiparticle excitations known as Majorana Fermions have been theoretically proposed to exist in materials that exhibit superconductivity and topological surface states. Here we show that the cubic Laves phase Au$_2$Pb has a bulk Dirac cone above 100 K that gaps out upon cooling at a structural phase transition to create a topologically non trivial phase that superconducts below 1.2 K. The nontrivial Z$_2$ = -1 invariant in the low temperature phase indicates that Au$_2$Pb in its superconducting state must have topological surface states. These characteristics make Au$_2$Pb a unique platform for studying the transition between bulk Dirac electrons and topological surface states as well as studying the interaction of superconductivity with topological surface states.
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Submitted 8 December, 2014;
originally announced December 2014.
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Intrinsic disorder in graphene on transition metal dichalcogenide heterostructures
Authors:
Matthew Yankowitz,
Stefano Larentis,
Kyounghwan Kim,
Jiamin Xue,
Devin McKenzie,
Shengqiang Huang,
Marina Paggen,
Mazhar N. Ali,
Robert J. Cava,
Emanuel Tutuc,
Brian J. LeRoy
Abstract:
The electronic properties of two-dimensional materials such as graphene are extremely sensitive to their environment, especially the underlying substrate. Planar van der Waals bonded substrates such as hexagonal boron nitride (hBN) have been shown to greatly improve the electrical performance of graphene devices by reducing topographic variations and charge fluctuations compared to amorphous insul…
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The electronic properties of two-dimensional materials such as graphene are extremely sensitive to their environment, especially the underlying substrate. Planar van der Waals bonded substrates such as hexagonal boron nitride (hBN) have been shown to greatly improve the electrical performance of graphene devices by reducing topographic variations and charge fluctuations compared to amorphous insulating substrates}. Semiconducting transition metal dichalchogenides (TMDs) are another family of van der Waals bonded materials that have recently received interest as alternative substrates to hBN for graphene as well as for components in novel graphene-based device heterostructures. Additionally, their semiconducting nature permits dynamic gate voltage control over the interaction strength with graphene. Through local scanning probe measurements we find that crystalline defects intrinsic to TMDs induce scattering in graphene which results in significant degradation of the heterostructure quality, particularly compared to similar graphene on hBN devices.
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Submitted 24 November, 2014;
originally announced November 2014.
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Breakdown of Three-dimensional Dirac Semimetal State in pressurized Cd3As2
Authors:
Shan Zhang,
Qi Wu,
Leslie Schoop,
Mazhar N. Ali,
Youguo Shi,
Ni Ni,
Quinn Gibson,
Vladimir Sidorov,
Wei Yi,
Jing Guo,
Yazhou Zhou,
Peiwen Gao,
Dachun Gu,
Chao Zhang,
Sheng Jiang,
Ke Yang,
Aiguo Li,
Yanchun Li,
Xiaodong Li,
Jing Liu,
Xi Dai,
Zhong Fang,
Robert J. Cava,
Liling Sun,
Zhongxian Zhao
Abstract:
We report the first observation of a pressure-induced breakdown of the 3D-DSM state in Cd3As2, evidenced by a series of in-situ high-pressure synchrotron X-ray diffraction (XRD) and single crystal transport measurements. We find that Cd3As2 undergoes a structural phase transition from a metallic tetragonal (T) phase in space group I41/acd to a semiconducting monoclinic (M) phase in space group P21…
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We report the first observation of a pressure-induced breakdown of the 3D-DSM state in Cd3As2, evidenced by a series of in-situ high-pressure synchrotron X-ray diffraction (XRD) and single crystal transport measurements. We find that Cd3As2 undergoes a structural phase transition from a metallic tetragonal (T) phase in space group I41/acd to a semiconducting monoclinic (M) phase in space group P21/c at critical pressure 2.57 GPa, above this pressure, an activation energy gap appears, accompanied by distinct switches in Hall resistivity slope and electron mobility. These changes of crystal symmetry and corresponding transport properties manifest the breakdown of the 3D-DSM state in pressurized Cd3As2.
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Submitted 22 June, 2015; v1 submitted 13 October, 2014;
originally announced October 2014.
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Quantum criticality in a uniaxial organic ferroelectric
Authors:
S. E. Rowley,
M. Hadjimichael,
M. N. Ali,
Y. C. Durmaz,
J. C. Lashley,
R. J. Cava,
J. F. Scott
Abstract:
Tris-sarcosine calcium chloride (TSCC) is a highly uniaxial ferroelectric with a Curie temperature of approximately 130K. By suppressing ferroelectricity with bromine substitution on the chlorine sites, pure single crystals were tuned through a ferroelectric quantum phase transition. The resulting quantum critical regime was investigated in detail - the first time for a uniaxial ferroelectric and…
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Tris-sarcosine calcium chloride (TSCC) is a highly uniaxial ferroelectric with a Curie temperature of approximately 130K. By suppressing ferroelectricity with bromine substitution on the chlorine sites, pure single crystals were tuned through a ferroelectric quantum phase transition. The resulting quantum critical regime was investigated in detail - the first time for a uniaxial ferroelectric and for an organic ferroelectric - and was found to persist up to temperatures of at least 30K to 40K. The nature of long-range dipole interactions in uniaxial materials, which lead to non-analytical terms in the free-energy expansion in the polarization, predict a dielectric susceptibility varying as $1/T^3$ close to the quantum critical point. Rather than this, we find that the dielectric susceptibility varies as $1/T^2$ as expected and observed in better known multi-axial systems. We explain this result by identifying the ultra-weak nature of the dipoles in the TSCC family of crystals. Interestingly we observe a shallow minimum in the inverse dielectric function at low temperatures close to the quantum critical point in paraelectric samples that may be attributed to the coupling of quantum polarization and strain fields. Finally we present results of the heat capacity and electro-caloric effect and explain how the time dependence of the polarization in ferroelectrics and paraelectrics should be considered when making quantitative estimates of temperature changes induced by applied electric fields.
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Submitted 10 October, 2014;
originally announced October 2014.
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Electronic structure basis for the titanic magnetoresistance in WTe$_2$
Authors:
I. Pletikosić,
Mazhar N. Ali,
A. Fedorov,
R. J. Cava,
T. Valla
Abstract:
The electronic structure basis of the extremely large magnetoresistance in layered non-magnetic tungsten ditelluride has been investigated by angle-resolved photoelectron spectroscopy. Hole and electron pockets of approximately the same size were found at the Fermi level, suggesting that carrier compensation should be considered the primary source of the effect. The material exhibits a highly anis…
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The electronic structure basis of the extremely large magnetoresistance in layered non-magnetic tungsten ditelluride has been investigated by angle-resolved photoelectron spectroscopy. Hole and electron pockets of approximately the same size were found at the Fermi level, suggesting that carrier compensation should be considered the primary source of the effect. The material exhibits a highly anisotropic, quasi one-dimensional Fermi surface from which the pronounced anisotropy of the magnetoresistance follows. A change in the Fermi surface with temperature was found and a high-density-of-states band that may take over conduction at higher temperatures and cause the observed turn-on behavior of the magnetoresistance in WTe$_2$ was identified.
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Submitted 14 July, 2014;
originally announced July 2014.
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Titanic Magnetoresistance in WTe2
Authors:
Mazhar N. Ali,
Jun Xiong,
Steven Flynn,
Quinn Gibson,
Leslie Schoop,
Neel Haldolaarachchige,
N. P. Ong,
Jing Tao,
R. J. Cava
Abstract:
Magnetoresistance is the change of a material's electrical resistance in response to an applied magnetic field. In addition to its intrinsic scientific interest, it is a technologically important property, placing it in "Pasteur's quadrant" of research value: materials with large magnetorsistance have found use as magnetic sensors 1, in magnetic memory 2, hard drives 3, transistors 4, and are the…
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Magnetoresistance is the change of a material's electrical resistance in response to an applied magnetic field. In addition to its intrinsic scientific interest, it is a technologically important property, placing it in "Pasteur's quadrant" of research value: materials with large magnetorsistance have found use as magnetic sensors 1, in magnetic memory 2, hard drives 3, transistors 4, and are the subject of frequent study in the field of spintronics 5, 6. Here we report the observation of an extremely large one-dimensional positive magnetoresistance (XMR) in the layered transition metal dichalcogenide (TMD) WTe2; 452,700 percent at 4.5 Kelvin in a magnetic field of 14.7 Tesla, and 2.5 million percent at 0.4 Kelvin in 45 Tesla, with no saturation. The XMR is highly anisotropic, maximized in the crystallographic direction where small pockets of holes and electrons are found in the electronic structure. The determination of the origin of this effect and the fabrication of nanostructures and devices based on the XMR of WTe2 will represent a significant new direction in the study and uses of magnetoresistivity.
*The published version of the paper includes co-authors Tian Liang and Max Hirschberger.
**This paper has been published with new MR data to 60T where the MR of WTe2 reaches 13 million percent (at 0.5K) and still shows no signs of saturation. We also have new electron diffraction patterns to lower temperature (10K). We discuss the possible origin of the MR as coming from an electron-hole 'resonance' condition established by a perfect n/p ratio of 1 (more details in a new "extended data" section). This makes WTe2, possibly, the first realization of a perfectly balanced semimetal.
***The paper is published as "Large non-saturating magnetoresistance in WTe2" in Nature (2014), DOI:10.1038/nature13763
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Submitted 23 September, 2014; v1 submitted 5 May, 2014;
originally announced May 2014.
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Quasi One Dimensional Dirac Electrons on the Surface of Ru$_2$Sn$_3$
Authors:
Q. D. Gibson,
D. Evtushinksy,
A. N. Yaresko,
A. B. Zabolotnyy,
Mazhar N. Ali,
M. K. Fuccillo,
J. Van den Brink,
B. Büchner,
R. J. Cava,
S. V. Borisenko
Abstract:
We present an ARPES study of the surface states of Ru$_2$Sn$_3$, a new type of a strong 3D topological insulator (TI). In contrast to currently known 3D TIs, which display two-dimensional Dirac cones with linear isotropic dispersions crossing through one point in the surface Brillouin Zone (SBZ), the surface states on Ru$_2$Sn$_3$ are highly anisotropic, displaying an almost flat dispersion along…
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We present an ARPES study of the surface states of Ru$_2$Sn$_3$, a new type of a strong 3D topological insulator (TI). In contrast to currently known 3D TIs, which display two-dimensional Dirac cones with linear isotropic dispersions crossing through one point in the surface Brillouin Zone (SBZ), the surface states on Ru$_2$Sn$_3$ are highly anisotropic, displaying an almost flat dispersion along certain high-symmetry directions. This results in quasi-one dimensional (1D) Dirac electronic states throughout the SBZ that we argue are inherited from features in the bulk electronic structure of Ru$_2$Sn$_3$, where the bulk conduction bands are highly anisotropic. Unlike previous experimentally characterized TIs, the topological surface states of Ru$_2$Sn$_3$ are the result of a d-p band inversion rather than an s-p band inversion. The observed surface states are the topological equivalent to a single 2D Dirac cone at the surface Brillouin zone
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Submitted 2 May, 2014;
originally announced May 2014.
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Ultrahigh mobility and giant magnetoresistance in the Dirac semimetal Cd$_3$As$_2$
Authors:
Tian Liang,
Quinn Gibson,
Mazhar N. Ali,
Minhao Liu,
R. J. Cava,
N. P. Ong
Abstract:
Dirac semimetals and Weyl semimetals are 3D analogs of graphene in which crystalline symmetry protects the nodes against gap formation [1-3]. Na$_3$Bi and Cd$_3$As$_2$ were predicted to be Dirac semimetals [4,5], and recently confirmed to be so by photoemission [6-8]. Several novel transport properties in a magnetic field $\bf H$ have been proposed for Dirac semimetals [2,9-11]. Here we report an…
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Dirac semimetals and Weyl semimetals are 3D analogs of graphene in which crystalline symmetry protects the nodes against gap formation [1-3]. Na$_3$Bi and Cd$_3$As$_2$ were predicted to be Dirac semimetals [4,5], and recently confirmed to be so by photoemission [6-8]. Several novel transport properties in a magnetic field $\bf H$ have been proposed for Dirac semimetals [2,9-11]. Here we report an interesting property in Cd$_3$As$_2$ that was unpredicted, namely a remarkable protection mechanism that strongly suppresses back-scattering in zero $\bf H$. In single crystals, the protection results in a very high mobility that exceeds $>10^7$ cm$^2$/Vs below 4 K. Suppression of backscattering results in a transport lifetime 10$^4\times$ longer than the quantum lifetime. The lifting of this protection by $\bf H$ leads to an unusual giant $\bf H$-linear magnetoresistance that violates Kohler's rule. We discuss how this may relate to changes to the Fermi surface induced by $\bf H$.
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Submitted 24 November, 2014; v1 submitted 30 April, 2014;
originally announced April 2014.
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Cd3As2 is Centrosymmetric
Authors:
Mazhar N. Ali,
Quinn Gibson,
Sangjun Jeon,
Brian B. Zhou,
Ali Yazdani,
R. J. Cava
Abstract:
This is a revised version of a manuscript that was originally posted here in February of 2014. It has been accepted at the journal Inorganic Chemistry after reviews that included those of two crystallographers who made sure all the t's were crossed and the i's were dotted. The old work (from 1968) that said that Cd3As2 was noncentrosymmetric was mistaken, with the authors of that study making a ty…
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This is a revised version of a manuscript that was originally posted here in February of 2014. It has been accepted at the journal Inorganic Chemistry after reviews that included those of two crystallographers who made sure all the t's were crossed and the i's were dotted. The old work (from 1968) that said that Cd3As2 was noncentrosymmetric was mistaken, with the authors of that study making a type of error that in the 1980s became infamous in crystallography. As a result of the increased scrutiny of the issue of centrosymmetricity of the 1980's, there are now much better analysis tools to resolve the issue fully, and its important to understand that not just our crystals are centrosymmetric, even the old guy's crystals were centrosymmetric (and by implication everyone's are). There is no shame in having made that error back in the day and those authors would not find the current centrosymmetric result controversial; their paper is excellent in all other aspects. This manuscript describes how the structure is determined, explains the structure schematically, calculates the electronic structure based on the correct centrosymmetric crystal structure, and gives the structural details that should be used for future analysis and modeling.
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Submitted 30 March, 2014; v1 submitted 29 December, 2013;
originally announced December 2013.
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A Non-Centrosymmetric Superconductor with a Bulk 3D Dirac Cone Gapped by Strong Spin Orbit Coupling
Authors:
Mazhar N. Ali,
Quinn Gibson,
Tomasz Klimczuk,
R. J. Cava
Abstract:
Layered, non-centrosymmetric, heavy element PbTaSe2 is found to be superconducting. We report its electronic properties accompanied by electronic structure calculations. Specific heat, electrical resistivity and magnetic susceptibility measurements indicate that PbTaSe2 is a moderately coupled, type-II BCS superconductor (Tc = 3.72 K, Ginzburg-Landau parameter Kappa = 14) with an electronphonon co…
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Layered, non-centrosymmetric, heavy element PbTaSe2 is found to be superconducting. We report its electronic properties accompanied by electronic structure calculations. Specific heat, electrical resistivity and magnetic susceptibility measurements indicate that PbTaSe2 is a moderately coupled, type-II BCS superconductor (Tc = 3.72 K, Ginzburg-Landau parameter Kappa = 14) with an electronphonon coupling constant of Lambda_ep = 0.74. Electronic structure calculations reveal a single bulk 3D Dirac cone at the K point of the Brillouin Zone derived exclusively from its hexagonal Pb layer; it is similar to the feature found in graphene except there is a 0.8 eV gap opened by spin-orbit coupling. The combination of large spin-orbit coupling and lack of inversion symmetry also results in large Rashba splitting on the order of tenths of eV.
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Submitted 30 October, 2013;
originally announced October 2013.