Bottom-up Graphene Nanoribbon Field-Effect Transistors
Authors:
Patrick B. Bennett,
Zahra Pedramrazi,
Ali Madani,
Yen-Chia Chen,
Dimas G. de Oteyza,
Chen Chen,
Felix R. Fischer,
Michael F. Crommie,
Jeffrey Bokor
Abstract:
Recently developed processes have enabled bottom-up chemical synthesis of graphene nanoribbons (GNRs) with precise atomic structure. These GNRs are ideal candidates for electronic devices because of their uniformity, extremely narrow width below 1 nm, atomically perfect edge structure, and desirable electronic properties. Here, we demonstrate nanoscale chemically synthesized GNR field-effect trans…
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Recently developed processes have enabled bottom-up chemical synthesis of graphene nanoribbons (GNRs) with precise atomic structure. These GNRs are ideal candidates for electronic devices because of their uniformity, extremely narrow width below 1 nm, atomically perfect edge structure, and desirable electronic properties. Here, we demonstrate nanoscale chemically synthesized GNR field-effect transistors, made possible by development of a new layer transfer process. We observe strong environmental sensitivity and unique transport behavior characteristic of sub-1nm width GNRs.
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Submitted 1 October, 2013;
originally announced October 2013.
