Showing 1–50 of 58 results for author: Capaz, R B

TMM$-$Sim: A Versatile Tool for Optical Simulation of Thin$-$Film Solar Cells

Authors: Leandro Benatto, Omar Mesquita, Kaike R. M. Pachecoand Lucimara S. Roman, Marlus Koehler, Rodrigo B. Capaz, Graziâni Candiotto

Abstract: The Transfer Matrix Method (TMM) has become a prominent tool for the optical simulation of thin$-$film solar cells, particularly among researchers specializing in organic semiconductors and perovskite materials. As the commercial viability of these solar cells continues to advance, driven by rapid developments in materials and production processes, the importance of optical simulation has grown si… ▽ More The Transfer Matrix Method (TMM) has become a prominent tool for the optical simulation of thin$-$film solar cells, particularly among researchers specializing in organic semiconductors and perovskite materials. As the commercial viability of these solar cells continues to advance, driven by rapid developments in materials and production processes, the importance of optical simulation has grown significantly. By leveraging optical simulation, researchers can gain profound insights into photovoltaic phenomena, empowering the implementation of device optimization strategies to achieve enhanced performance. However, existing TMM$-$based packages exhibit limitations, such as requiring programming expertise, licensing fees, or lack of support for bilayer device simulation. In response to these gaps and challenges, we present the TMM Simulator (TMM$-$Sim), an intuitive and user$-$friendly tool to calculate essential photovoltaic parameters, including the optical electric field profile, exciton generation profile, fraction of light absorbed per layer, photocurrent, external quantum efficiency, internal quantum efficiency, and parasitic losses. An additional advantage of TMM$-$Sim lies in its capacity to generate outcomes suitable as input parameters for electro$-$optical device simulations. In this work, we offer a comprehensive guide, outlining a step$-$by$-$step process to use TMM$-$Sim, and provide a thorough analysis of the results. TMM$-$Sim is freely available, accessible through our web server (nanocalc.org), or downloadable from the TMM$-$Sim repository (for \textit{Unix}, \textit{Windows}, and \textit{macOS}) on \textit{GitHub}. With its user$-$friendly interface and powerful capabilities, TMM$-$Sim aims to facilitate and accelerate research in thin$-$film solar cells, fostering advancements in renewable energy technologies. △ Less

Submitted 18 April, 2024; originally announced April 2024.

Comments: 9 pages, 8 figures

Report number: COMPHY-D-23-00846

RI$-$Calc: A User Friendly Software and Web Server for Refractive Index Calculation

Authors: Leandro Benatto, Omar Mesquita, Lucimara S. Roman, Marlus Koehler, Rodrigo B. Capaz, Graziâni Candiotto

Abstract: The refractive index of an optical medium is essential for studying a variety of physical phenomena. One useful method for determining the refractive index of scalar materials (i.e, materials which are characterized by a scalar dielectric function) is to employ the Kramers-Kronig (K-K) relations. The K-K method is particularly useful in cases where ellipsometric measurements are unavailable, a sit… ▽ More The refractive index of an optical medium is essential for studying a variety of physical phenomena. One useful method for determining the refractive index of scalar materials (i.e, materials which are characterized by a scalar dielectric function) is to employ the Kramers-Kronig (K-K) relations. The K-K method is particularly useful in cases where ellipsometric measurements are unavailable, a situation that frequently occurs in many laboratories. Although some packages can perform this calculation, they usually lack a graphical interface and are complex to implement and use. Those deficiencies inhibits their utilization by a plethora of researchers unfamiliar with programming languages. To address the aforementioned gap, we have developed the Refractive Index Calculator (RI-Calc) program that provides an intuitive and user-friendly interface. The RI-Calc program allows users to input the absorption coefficient spectrum and then easily calculate the complex refractive index and the complex relative permittivity of a broad range of thin films, including of molecules, polymers, blends, and perovskites. The program has been thoroughly tested, taking into account the Lorentz oscillator model and experimental data from a materials' refractive index database, demonstrating consistent outcomes. It is compatible with Windows, Unix, and macOS operating systems. You can download the RI-Calc binaries from our GitHub repository or conveniently access the program through our dedicated web server at nanocalc.org. △ Less

Submitted 24 January, 2024; originally announced January 2024.

Comments: 8 pages, 7 figures

Report number: COMPHY-D-23-00596

Magnetic control of Weyl nodes and wave packets in three-dimensional warped semimetals

Authors: Bruno Focassio, Gabriel R. Schleder, Adalberto Fazzio, Rodrigo B. Capaz, Pedro V. Lopes, Jaime Ferreira, Carsten Enderlein, Marcello B. Silva Neto

Abstract: We investigate the topological phase transitions driven by band warping and a transverse magnetic field, for three-dimensional Weyl semimetals. First, we use the Chern number as a mathematical tool to derive the topological phase diagram. Next, we associate each of the topological sectors to a given angular momentum state of a rotating wave packet. Then we show how the position of the Weyl nodes c… ▽ More We investigate the topological phase transitions driven by band warping and a transverse magnetic field, for three-dimensional Weyl semimetals. First, we use the Chern number as a mathematical tool to derive the topological phase diagram. Next, we associate each of the topological sectors to a given angular momentum state of a rotating wave packet. Then we show how the position of the Weyl nodes can be manipulated by a transverse external magnetic field that ultimately quenches the wave packet rotation, first partially and then completely, thus resulting in a sequence of field-induced topological phase transitions. Finally, we calculate the current-induced magnetization and the anomalous Hall conductivity of a prototypical warped Weyl material. Both observables reflect the topological transitions associated with the wave packet rotation and can help to identify the elusive 3D quantum anomalous Hall effect in three-dimensional, warped Weyl materials. △ Less

Submitted 11 January, 2024; originally announced January 2024.

Comments: 6 pages, 5 figures

Strain, Anharmonicity and Finite-Size Effects on the Vibrational Properties of Linear Carbon Chains

Authors: Graziâni Candiotto, Fernanda R. Silva, Deyse G. Costa, Rodrigo B. Capaz

Abstract: Linear carbon chains (LCCs) are the ultimate 1D molecular system and they show unique mechanical, optical and electronic properties that can be tuned by altering the number of carbon atoms, strain, encapsulation, and other external parameters. In this work, we probe the effects of quantum anharmonicity, strain and finite size on the structural and vibrational properties of these chains, using high… ▽ More Linear carbon chains (LCCs) are the ultimate 1D molecular system and they show unique mechanical, optical and electronic properties that can be tuned by altering the number of carbon atoms, strain, encapsulation, and other external parameters. In this work, we probe the effects of quantum anharmonicity, strain and finite size on the structural and vibrational properties of these chains, using high$-$level density functional theory (DFT) calculations. We find strong anharmonicity effects for infinite chains, leading to ground$-$state nuclear wavefunctions that are barely localized at each of the dimerized geometries, i.e. strong tunneling occurs between the two minima of the potential energy surface. This effect is enhanced for compressive strains. In addition, vibrational C$-$band frequencies deviate substantially from experimental measurements in long chains encapsulated in carbon nanotubes. On the other hand, calculations for finite chains suggest that quantum anharmonicity effects are strongly suppressed in finite system, even in the extrapolation to the infinite case. For finite systems, vibrational C$-$band frequencies agree well with experimental values at zero pressure. However, these frequencies increase under compressive strain, in contradiction with recent results. This contradiction is not resolved by adding explicitly the encapsulating carbon nanotubes to our calculations. Our results indicate that LCCs embody an intriguing 1D system in which the behavior of very large finite systems do not reproduce or converge to the behavior of truly infinite ones. △ Less

Submitted 13 December, 2023; originally announced December 2023.

Comments: 8 pages, 7 figures

Report number: BA14559

Journal ref: Phys. Rev. B 109, 045405 (2024)

Reorganization energy from charge transport measurements in a monolithically$-$integrated molecular device

Authors: Leandro Merces, Graziâni Candiotto, Letícia M. M. Ferro, Anerise de Barros, Carlos V. S. Batista, Ali Nawaz, Antonio Riul Jr, Rodrigo B. Capaz, Carlos C. Bof Bufon

Abstract: Intermolecular charge transfer reactions are key processes in physical chemistry. The electron-transfer rates depend on a few system's parameters, such as temperature, electromagnetic field, distance between adsorbates and, especially, the molecular reorganization energy. This microscopic greatness is the energetic cost to rearrange each single$-$molecule and its surrounding environment when a cha… ▽ More Intermolecular charge transfer reactions are key processes in physical chemistry. The electron-transfer rates depend on a few system's parameters, such as temperature, electromagnetic field, distance between adsorbates and, especially, the molecular reorganization energy. This microscopic greatness is the energetic cost to rearrange each single$-$molecule and its surrounding environment when a charge is transferred. Reorganization energies are measured by electrochemistry and spectroscopy techniques as well as at the single-molecule limit using atomic force microscopy approaches, but not from temperature$-$dependent charge transport measurements nor in a monolithically$-$integrated molecular device. Nowadays self$-$rolling nanomembrane (rNM) devices, with strain$-$engineered mechanical properties, on$-$a$-$chip monolithic integration, and operable in distinct environments, overcome those challenges. Here, we investigate the charge transfer reactions occurring within a ca. 6 nm thick copper$-$phthalocyanine (CuPc) film employed as electrode-spacer in a monolithically integrated nanocapacitor. Employing the rNM technology allows us to measure the molecules' charge$-$transport dependence on temperature for different electric fields. Thereby, the CuPc reorganization energy is determined as (930 $\pm$ 40) meV, whereas density functional theory (DFT) calculations support our findings with the atomistic picture of the CuPc charge transfer reaction. Our approach presents a consistent route towards electron transfer reaction characterization using current$-$voltage spectroscopy and provides insight into the role of the molecular reorganization energy when it comes to electrochemical nanodevices. △ Less

Submitted 4 December, 2023; originally announced December 2023.

Comments: 17 pages, 5 figures

Journal ref: Small 2021, 17, 2103897

Improved Performance of Organic Light-Emitting Transistors Enabled by Polyurethane Gate Dielectric

Authors: Arthur R. J. Barreto, Graziâni Candiotto, Harold J. C. Avila, Rafael S. Carvalho, Aline Magalhães dos Santos, Mario Prosa, Emilia Benvenuti, Salvatore Moschetto, Stefano Toffanin, Rodrigo B. Capaz, Michele Muccini, Marco Cremona

Abstract: Organic light-emitting transistors (OLETs) are multifunctional optoelectronic devices that combine in a single structure the advantages of organic light emitting diodes (OLEDs) and organic field-effect transistors (OFETs). However, low charge mobility and high threshold voltage are critical hurdles to practical OLETs implementation. This work reports on the improvements obtained by using polyureth… ▽ More Organic light-emitting transistors (OLETs) are multifunctional optoelectronic devices that combine in a single structure the advantages of organic light emitting diodes (OLEDs) and organic field-effect transistors (OFETs). However, low charge mobility and high threshold voltage are critical hurdles to practical OLETs implementation. This work reports on the improvements obtained by using polyurethane films as dielectric layer material in place of the standard poly(methylmethacrylate) (PMMA) in OLET devices. It was found that polyurethane drastically reduces the number of traps in the device thereby improving electrical and optoelectronic device parameters. In addition, a model was developed to rationalize an anomalous behavior at the pinch-off voltage. Our findings represent a step forward to overcome the limiting factors of OLETs that prevent their use in commercial electronics by providing a simple route for low-bias device operation. △ Less

Submitted 4 December, 2023; originally announced December 2023.

Comments: 25 pages, 5 figures, 1 table

Journal ref: ACS Appl. Mater. Interfaces 2023, 15, 28, 33809-33818

Emission Redshift in DCM2-Doped Alq$_{3}$ Caused by Non-Linear Stark Shifts and Förster-Mediated Exciton Diffusion

Authors: Graziâni Candiotto, Ronaldo Giro, Bruno A. C. Horta, Flávia P. Rosselli, Marcelo de Cicco, Carlos A. Achete, Marco Cremona, Rodrigo B. Capaz

Abstract: Organic light-emitting diodes (OLEDs) devices in the archetype small molecule fluorescent guest-host system tris(8-hydroxyquinolinato) aluminum (Alq$_{3}$) doped with 4-(dicyanomethylene)-2-methyl-6-julolidyl-9-enyl-4H-pyran (DCM2) displays a redshift in light-emission frequency which is extremely sensitive to the dopant concentration. This effect can be used to tune the emission frequency in this… ▽ More Organic light-emitting diodes (OLEDs) devices in the archetype small molecule fluorescent guest-host system tris(8-hydroxyquinolinato) aluminum (Alq$_{3}$) doped with 4-(dicyanomethylene)-2-methyl-6-julolidyl-9-enyl-4H-pyran (DCM2) displays a redshift in light-emission frequency which is extremely sensitive to the dopant concentration. This effect can be used to tune the emission frequency in this particular class of OLEDs. In this work, a model is proposed to describe this effect using a combination of density functional theory (DFT) quantum-chemical calculations and stochastic simulations of exciton diffusion via a Förster mechanism. The results show that the permanent dipole moments of the Alq$_{3}$ molecules generate random electric fields that are large enough to cause a non-linear Stark shift in the band gap of neighboring DCM2 molecules. As a consequence of these non-linear shifts, a non-Gaussian probability distribution of highest-occupied molecular orbital to lowest-unoccupied molecular orbital (HOMO-LUMO) gaps for the DCM2 molecules in the Alq$_{3}$ matrix is observed, with long exponential tails to the low-energy side. Surprisingly, this probability distribution of DCM2 HOMO-LUMO gaps is virtually independent of DCM2 concentration into Alq$_{3}$ matrix, at least up to a fraction of 10%. This study shows that this distribution of gaps, combined with out-of-equilibrium exciton diffusion among DCM2 molecules, are sufficient to explain the experimentally observed emission redshift. △ Less

Submitted 27 November, 2023; originally announced November 2023.

Comments: 8 pages, 6 figures, 2 tables

Report number: BT13856

Journal ref: Phys. Rev. B 102, 235401 (2020)

FRET$-$Calc: A Free Software and Web Server for Förster Resonance Energy Transfer Calculation

Authors: Leandro Benatto, Omar Mesquita, João L. B. Rosa, Lucimara S. Roman, Marlus Koehler, Rodrigo B. Capaz, Graziâni Candiotto

Abstract: Förster Resonance Energy Transfer Calculator (FRET$-$Calc) is a program and web server that analyzes molar extinction coefficient of the acceptor, emission spectrum of the donor, and the refractive index spectrum of the donor/acceptor blend. Its main function is to obtain important parameters of the FRET process from experimental data, such as: (i) effective refractive index, (ii) overlap integral… ▽ More Förster Resonance Energy Transfer Calculator (FRET$-$Calc) is a program and web server that analyzes molar extinction coefficient of the acceptor, emission spectrum of the donor, and the refractive index spectrum of the donor/acceptor blend. Its main function is to obtain important parameters of the FRET process from experimental data, such as: (i) effective refractive index, (ii) overlap integral, (iii) Förster radius, (iii) FRET efficiency and (iv) FRET rate. FRET$-$Calc is license free software that can be run via dedicated web server (nanocalc.org) or downloading the program executables (for Unix, Windows, and macOS) from the FRET$-$Calc repository on GitHub. The program features a user$-$friendly interface, making it suitable for materials research and teaching purposes. In addition, the program is optimized to run on normal computers and is lightweight. An example will be given with the step by step of its use and results obtained. △ Less

Submitted 26 November, 2023; originally announced November 2023.

Comments: 7 pages, 6 figures

Journal ref: Comput. Phys. Commun., 287, 2023, 108715

PLQ-Sim: A Computational Tool for Simulating Photoluminescence Quenching Dynamics in Organic Donor/Acceptor Blends

Authors: Leandro Benatto, Omar Mesquita, Lucimara S. Roman, Rodrigo B. Capaz, Graziâni Candiotto, Marlus Koehler

Abstract: Photoluminescence Quenching Simulator (PLQ-Sim) is a user-friendly software to study the photoexcited state dynamics at the interface between two organic semiconductors forming a blend: an electron donor (D), and an electron acceptor (A). Its main function is to provide substantial information on the photophysical processes relevant to organic photovoltaic and photothermal devices, such as charge… ▽ More Photoluminescence Quenching Simulator (PLQ-Sim) is a user-friendly software to study the photoexcited state dynamics at the interface between two organic semiconductors forming a blend: an electron donor (D), and an electron acceptor (A). Its main function is to provide substantial information on the photophysical processes relevant to organic photovoltaic and photothermal devices, such as charge transfer state formation and subsequent free charge generation or exciton recombination. From input parameters provided by the user, the program calculates the transfer rates of the D/A blend and employs a kinetic model that provides the photoluminescence quenching efficiency for initial excitation in the donor or acceptor. When calculating the rates, the user can choose to use disorder parameters to better describe the system. In addition, the program was developed to address energy transfer phenomena that are commonly present in organic blends. The time evolution of state populations is also calculated providing relevant information for the user. In this article, we present the theory behind the kinetic model, along with suggestions for methods to obtain the input parameters. A detailed demonstration of the program, its applicability, and an analysis of the outputs are also presented. PLQ-Sim is license free software that can be run via dedicated webserver nanocalc.org or downloading the program executables (for Unix, Windows, and macOS) from the PLQ-Sim repository on GitHub. △ Less

Submitted 26 November, 2023; originally announced November 2023.

Comments: 13 pages, 11 figures

Journal ref: Comput. Phys. Commun., 296, 2024, 109015

Patterning edge-like defects and tuning defective areas on the basal plane of ultra-large MoS$_{2}$ monolayers toward hydrogen evolution reaction

Authors: Bianca Rocha Florindo, Leonardo H. Hasimoto, Nicolli de Freitas, Graziâni Candiotto, Erika Nascimento Lima, Cláudia de Lourenço, Ana B. S. de Araujo, Carlos Ospina, Jefferson Bettini, Edson R. Leite, Renato S. Lima, Adalberto Fazzio, Rodrigo B. Capaz, Murilo Santhiago

Abstract: The catalytic sites of MoS$_{2}$ monolayers towards hydrogen evolution are well known to be vacancies and edge-like defects. However, it is still very challenging to control the position, size, and defective areas on the basal plane of Mo$S_{2}$ monolayers by most of defect-engineering routes. In this work, the fabrication of etched arrays on ultra-large supported and free-standing MoS$_{2}$ monol… ▽ More The catalytic sites of MoS$_{2}$ monolayers towards hydrogen evolution are well known to be vacancies and edge-like defects. However, it is still very challenging to control the position, size, and defective areas on the basal plane of Mo$S_{2}$ monolayers by most of defect-engineering routes. In this work, the fabrication of etched arrays on ultra-large supported and free-standing MoS$_{2}$ monolayers using focused ion beam (FIB) is reported for the first time. By tuning the Ga+ ion dose, it is possible to confine defects near the etched edges or spread them over ultra-large areas on the basal plane. The electrocatalytic activity of the arrays toward hydrogen evolution reaction (HER) was measured by fabricating microelectrodes using a new method that preserves the catalytic sites. We demonstrate that the overpotential can be decreased up to 290 mV by assessing electrochemical activity only at the basal plane. High-resolution transmission electron microscopy images obtained on FIB patterned freestanding MoS$_{2}$ monolayers reveal the presence of amorphous regions and X-ray photoelectron spectroscopy indicates sulfur excess in these regions. Density-functional theory calculations provide identification of catalytic defect sites. Our results demonstrate a new rational control of amorphous-crystalline surface boundaries and future insight for defect optimization in MoS$_{2}$ monolayers. △ Less

Submitted 7 November, 2023; originally announced November 2023.

Comments: 10 pages, 5 figures

Journal ref: J. Mater. Chem. A, 2023,11, 19890-19899

Enhancing Chemical Stability and Photovoltaic Properties of Highly Efficient Nonfullerene Acceptors by Chalcogen Substitution: Insights from Quantum Chemical Calculations

Authors: Leandro Benatto, João Paulo A. Souza, Matheus F. F. das Neves, Lucimara S. Romana, Rodrigo B. Capaz, Graziâni Candiotto, Marlus Koehler

Abstract: The chemical stability of nonfullerene acceptor (NFA) is the Achilles' heel of the research on state-of-the-art organic solar cells (OSC). The fragility of the NFA is essentially due to the weak bond that links the central donor core of the molecules with their acceptor moieties at the edges. Here we proposed the replacement of thiophene at the outer-core position of traditional NFAs for telluroph… ▽ More The chemical stability of nonfullerene acceptor (NFA) is the Achilles' heel of the research on state-of-the-art organic solar cells (OSC). The fragility of the NFA is essentially due to the weak bond that links the central donor core of the molecules with their acceptor moieties at the edges. Here we proposed the replacement of thiophene at the outer-core position of traditional NFAs for tellurophene, a hitherto unexplored modification. Since tellurium is a distinctive element among chalcogens, the basic features of Te compounds cannot be deduced straightforwardly from the properties of their lighter analogues, S and Se. The modeled Te-based NFAs presented interesting features like stronger intra- and intermolecular interactions induced by a distinctive secondary bond effect between the end acceptor moiety and the outer chalcogen atom. This design strategy resulted in stiffer molecules with red-shifted absorption spectra and less susceptible to degradation verified through stress tests and vibrational spectra analysis. Besides that, a weakened exciton binding energy has been found, opening the possibility of blends with a lower driving force. Our results shed light on several aspects of selenation and telluration of traditional NFAs, providing valuable insights into the possible consequences for OSCs applications. △ Less

Submitted 6 November, 2023; originally announced November 2023.

Comments: 34 pages, 7 figures, 2 tables

The role of functional thiolated molecules on the enhanced electronic transport of interconnected MoS$_2$ nanostructures

Authors: Rafael L. H. Freire, Felipe Crasto de Lima, Rafael Furlan de Oliveira, Rodrigo B. Capaz, Adalberto Fazzio

Abstract: Molecular linkers have emerged as an effective strategy to improve electronic transport properties on solution-processed layered materials via defect functionalization. However, a detailed discussion on the microscopic mechanisms behind the beneficial effects of functionalization is still missing. Here, by first-principles calculations based on density functional theory, we investigate the effects… ▽ More Molecular linkers have emerged as an effective strategy to improve electronic transport properties on solution-processed layered materials via defect functionalization. However, a detailed discussion on the microscopic mechanisms behind the beneficial effects of functionalization is still missing. Here, by first-principles calculations based on density functional theory, we investigate the effects on the electronic properties of interconnected MoS$_2$ model flakes systems upon functionalization with different thiol molecule linkers, namely thiophenol, 1,4-benzenedithiol, 1,2-ethanedithiol, and 1,3-propanedithiol. The bonding of benzene- and ethanedithiol bridging adjacent armchair MoS$_2$ nanoflakes leads to electronic states just above or at the Fermi level, thus forming a molecular channel for electronic transport between flakes. In addition, the molecular linker reduces the potential barrier for thermally activated hopping between neighboring flakes, improving the conductivity as verified in experiments. The comprehension of such mechanisms helps in future developments of solution-processed layered materials for use on 2D electronic devices. △ Less

Submitted 17 March, 2022; originally announced March 2022.

Structural metastability and Fermi surface Topology of SrAl2Si2

Authors: Stamatios Strikos, Boby Joseph, Frederico G. Alabarse, George Valadares, Deyse G. Costa, Rodrigo B. Capaz, Mohammed ElMassalami

Abstract: SrAl2Si2 crystallizes into either a semimetallic, CaAl2Si2-type, αphase or a superconducting, BaZn2P2-type, βphase. We explore possible α--Pc;Tc--> βtransformations by employing pressure- and temperature-dependent free-energy calculations, vibrational spectra calculations, and room-temperature synchrotron X-ray powder diffraction (XRPD) measurements up to 14 GPa using diamond anvil cell. Our theor… ▽ More SrAl2Si2 crystallizes into either a semimetallic, CaAl2Si2-type, αphase or a superconducting, BaZn2P2-type, βphase. We explore possible α--Pc;Tc--> βtransformations by employing pressure- and temperature-dependent free-energy calculations, vibrational spectra calculations, and room-temperature synchrotron X-ray powder diffraction (XRPD) measurements up to 14 GPa using diamond anvil cell. Our theoretical and empirical analyses together with all baric and thermal reported events on both phases allow us to construct a preliminary P-T diagram of transformations. Our calculations show a relatively low critical pressure for the αto βtransition (4.9 GPa at 0 K, 5.0 GPa at 300 K and 5.3 GPa at 900 K); nevertheless, our nonequilibrium analysis indicates that the low-pressure-low-temperature αphase is separated from metastable βphase by a relatively high activation barrier. This analysis is supported by our XRPD data at ambient temperature and P < 14 GPa which shows an absence of βphase even after a compression involving three times the critical pressure. Finally, we briefly consider the change in Fermi surface topology when atomic rearrangement takes place via either transformations among SrAl2Si2-dimorphs or total chemical substitution of Ca by Sr in isomorphous αCaAl2Si2; empirically, manifestation of such topology modification is evident when comparing the evolution of (magneto-)transport properties of members of SrAl2Si2-dimorphs and αisomorphs. △ Less

Submitted 24 November, 2021; originally announced November 2021.

Comments: This manuscript is accepted for publication on ACS Inorganic Chemistry

An atomic scale study of Si-doped AlAs by cross-sectional scanning tunneling microscopy and density functional theory

Authors: D. Tjeertes, A. Vela, T. J. F. Verstijnen, E. G. Banfi, P. J. van Veldhoven, M. G. Menzes, R. B. Capaz, B. Koiller, P. M. Koenraad

Abstract: Silicon (Si) donors in GaAs have been the topic of extensive studies since Si is the most common and well understood n-type dopant in III-V semiconductor devices and substrates. The indirect bandgap of AlAs compared to the direct one of GaAs leads to interesting effects when introducing Si dopants. Here we present a study of cross-sectional scanning tunneling microscopy (X-STM) and density functio… ▽ More Silicon (Si) donors in GaAs have been the topic of extensive studies since Si is the most common and well understood n-type dopant in III-V semiconductor devices and substrates. The indirect bandgap of AlAs compared to the direct one of GaAs leads to interesting effects when introducing Si dopants. Here we present a study of cross-sectional scanning tunneling microscopy (X-STM) and density functional theory (DFT) calculations to study Si donors in AlAs at the atomic scale. Based on their crystal symmetry and contrast strengths, we identify Si donors up to four layers below the (110) surface of AlAs. Interestingly, their short-range local density of states (LDOS) is very similar to Si atoms in the (110) surface of GaAs. Additionally we show high-resolution images of Si donors in all these layers. For empty state imaging, the experimental and simulated STM images based on DFT show excellent agreement for Si donor up to two layers below the surface. △ Less

Submitted 10 June, 2021; originally announced June 2021.

Journal ref: Phys. Rev. B 104, 125433 (2021)

Electronic properties of substitutional impurities in graphene-like C$_2$N, $tg$-C$_3$N$_4$, and $hg$-C$_3$N$_4$

Authors: Saif Ullah, Pablo A. Denis, Marcos G. Menezes, Fernando Sato, Rodrigo B. Capaz

Abstract: We study the electronic and structural properties of substitutional impurities of graphenelike nanoporous materials C$_2$N, $tg$-, and $hg$-C$_3$N$_4$ by means of density functional theory calculations. We consider four types of impurities; boron substitution on carbon sites (B(C)), carbon substitution on nitrogen sites (C(N)), nitrogen substitution on carbon sites (N(C)), and sulfur substitution… ▽ More We study the electronic and structural properties of substitutional impurities of graphenelike nanoporous materials C$_2$N, $tg$-, and $hg$-C$_3$N$_4$ by means of density functional theory calculations. We consider four types of impurities; boron substitution on carbon sites (B(C)), carbon substitution on nitrogen sites (C(N)), nitrogen substitution on carbon sites (N(C)), and sulfur substitution on nitrogen sites (S(N)). From cohesive energy calculations, we find that the C(N) and B(C) substitutions are the most energetically favorable and induce small bond modifications in the vicinity of the impurity, while the S(N) induces strong lattice distortions. Though all of the studied impurities induce defect levels inside the band gap of these materials, their electronic properties are poles apart depending on the behavior of the impurity as an acceptor or a donor. It is also observed that acceptor (donor) wavefunctions are composed only of $σ$ ($π$) orbitals from the impurity itself and/or neighboring sites. Consequently, acceptor wavefunctions are directed towards the pores and donor wavefunctions are more extended throughout the neighboring atoms, a property that could further be explored to modify the interaction between these materials and adsorbates. Moreover, impurity properties display a strong site sensitivity and ground state binding energies ranging from $0.03$ to $1.13$ eV, thus offering an interesting route for tuning the optical properties of these materials. Finally, spin-polarized calculations reveal that all impurity configurations have a magnetic ground state that rises from the spin splitting of the impurity levels. In a few configurations, more than one impurity level can be found inside the gap and two of them could potentially be explored as two-level systems for single-photon emission, following similar proposals recently made on defect complexes on TMDCs. △ Less

Submitted 19 October, 2020; originally announced October 2020.

Journal ref: Physical Review B 102, 134112 (2020)

Flat bands and gaps in twisted double bilayer graphene

Authors: F. J. Culchac, Rodrigo B. Capaz, Leonor Chico, E. Suarez Morell

Abstract: We present electronic structure calculations of twisted double bilayer graphene (TDBG): A tetralayer graphene structure composed of two AB-stacked graphene bilayers with a relative rotation angle between them. Using first-principles calculations, we find that TDBG is semiconducting with a band gap that depends on the twist angle, that can be tuned by an external electric field. The gap is consiste… ▽ More We present electronic structure calculations of twisted double bilayer graphene (TDBG): A tetralayer graphene structure composed of two AB-stacked graphene bilayers with a relative rotation angle between them. Using first-principles calculations, we find that TDBG is semiconducting with a band gap that depends on the twist angle, that can be tuned by an external electric field. The gap is consistent with TDBG symmetry and its magnitude is related to surface effects, driving electron transfer from outer to inner layers. The surface effect competes with an energy upshift of localized states at inner layers, giving rise to the peculiar angle dependence of the band gap, which reduces at low angles. For these low twist angles, the TDBG develops flat bands, in which electrons in the inner layers are localized at the AA regions, as in twisted bilayer graphene. △ Less

Submitted 4 November, 2019; originally announced November 2019.

Comments: 8 pages and 8 Figures

Layer breathing and shear modes in multilayer graphene: A DFT-vdW study

Authors: Rafael R. Del Grande, Marcos G. Menezes, Rodrigo B. Capaz

Abstract: In this work, we study structural and vibrational properties of multilayer graphene using density-functional theory (DFT) with van der Waals (vdW) functionals. Initially, we analyze how different vdW functionals compare by evaluating the lattice parameters, elastic constants and vibrational frequencies of low energy optical modes of graphite. Our results indicate that the vdW-DF1-optB88 functional… ▽ More In this work, we study structural and vibrational properties of multilayer graphene using density-functional theory (DFT) with van der Waals (vdW) functionals. Initially, we analyze how different vdW functionals compare by evaluating the lattice parameters, elastic constants and vibrational frequencies of low energy optical modes of graphite. Our results indicate that the vdW-DF1-optB88 functional has the best overall performance on the description of vibrational properties. Next, we use this functional to study the influence of the vdW interactions on the structural and vibrational properties of multilayer graphene. Specifically, we evaluate binding energies, interlayer distances and phonon frequencies of layer breathing and shear modes. We observe excellent agreement between our calculated results and available experimental data, which suggests that this functional has truly predictive power for layer-breathing and shear frequencies that have not been measured yet. This indicates that careful selected vdW functionals can describe interlayer bonding in graphene-related systems with good accuracy. △ Less

Submitted 2 November, 2019; originally announced November 2019.

Journal ref: J. Phys.: Condens. Matter 31 295301 (2019)

Energy barriers for collapsing large-diameter carbon nanotubes

Authors: Rafael R. Del Grande, Alexandre F. da Fonseca, Rodrigo B. Capaz

Abstract: Single-wall carbon nanotubes (SWNTs) are best known in their hollow cylindrical shapes, but the ground state of large-diameter tubes actually corresponds to a collapsed dumbbell-like structure, where the opposite sides of the nanotube wall are brought in contact and stabilized by van der Waals attraction. For those tubes, the cylindrical shape is metastable and it is interesting to investigate the… ▽ More Single-wall carbon nanotubes (SWNTs) are best known in their hollow cylindrical shapes, but the ground state of large-diameter tubes actually corresponds to a collapsed dumbbell-like structure, where the opposite sides of the nanotube wall are brought in contact and stabilized by van der Waals attraction. For those tubes, the cylindrical shape is metastable and it is interesting to investigate the energy barrier for jumping from one configuration to another. We calculate the energy barrier for SWNT collapse by considering a transition pathway that consists of an initial local deformation that subsequently propagates itself along the SWNT axis. This leads to finite and physically meaningful energy barriers in the limit of infinite nanotubes. Yet, such barriers are surprisingly large (tens of eV) and therefore virtually unsurmountable, which essentially prevents the thermal collapse of a metastable cylindrical at any reasonable temperatures. Moreover, we show that collapse barriers increase counterintuitively with SWNT diameter. Finally, we demonstrate that, despite such huge barriers, SWNTs may collapse relatively easily under external radial forces and we shed light on recent experimental observations of collapsed and cylindrical SWNTs of various diameters. △ Less

Submitted 23 July, 2019; originally announced July 2019.

Journal ref: CARBON, 2019

Photonic spin Hall effect in bilayer graphene Moiré superlattices

Authors: W. J. M. Kort-Kamp, F. J. Culchac, Rodrigo B. Capaz, Felipe A. Pinheiro

Abstract: The formation of a superstructure - with a related Moiré pattern - plays a crucial role in the extraordinary optical and electronic properties of twisted bilayer graphene, including the recently observed unconventional superconductivity. Here we put forward a novel, interdisciplinary approach to determine the Moiré angle in twisted bilayer graphene based on the photonic spin Hall effect. We show t… ▽ More The formation of a superstructure - with a related Moiré pattern - plays a crucial role in the extraordinary optical and electronic properties of twisted bilayer graphene, including the recently observed unconventional superconductivity. Here we put forward a novel, interdisciplinary approach to determine the Moiré angle in twisted bilayer graphene based on the photonic spin Hall effect. We show that the photonic spin Hall effect exhibits clear fingerprints of the underlying Moiré pattern, and the associated light beam shifts are well beyond current experimental sensitivities in the near-infrared and visible ranges. By discovering the dependence of the frequency position of the maximal photonic spin Hall effect shift on the Moiré angle, we argue that the latter could be unequivocally accessed via all-optical far-field measurements. We also disclose that, when combined with the Goos-Hänchen effect, the spin Hall effect of light enables the complete determination of the electronic conductivity of the bilayer. Altogether our findings demonstrate that sub-wavelength spin-orbit interactions of light provide a unprecedented toolset for investigating optoelectronic properties of multilayer two-dimensional van der Waals materials. △ Less

Submitted 31 October, 2018; originally announced November 2018.

Comments: 7 pages, 4 figures

Theory of Hole-Spin Qubits in Strained Germanium Quantum Dots

Authors: L. A. Terrazos, E. Marcellina, Zhanning Wang, S. N. Coppersmith, Mark Friesen, A. R. Hamilton, Xuedong Hu, Belita Koiller, A. L. Saraiva, Dimitrie Culcer, Rodrigo B. Capaz

Abstract: We theoretically investigate the properties of holes in a Si$_{x}$Ge$_{1-x}$/Ge/ Si$_{x}$Ge$_{1-x}$ quantum well in a perpendicular magnetic field that make them advantageous as qubits, including a large ($>$100~meV) intrinsic splitting between the light and heavy hole bands, a very light ($\sim$0.05$\, m_0$) in-plane effective mass, consistent with higher mobilities and tunnel rates, and larger d… ▽ More We theoretically investigate the properties of holes in a Si$_{x}$Ge$_{1-x}$/Ge/ Si$_{x}$Ge$_{1-x}$ quantum well in a perpendicular magnetic field that make them advantageous as qubits, including a large ($>$100~meV) intrinsic splitting between the light and heavy hole bands, a very light ($\sim$0.05$\, m_0$) in-plane effective mass, consistent with higher mobilities and tunnel rates, and larger dot sizes that could ameliorate constraints on device fabrication. Compared to electrons in quantum dots, hole qubits do not suffer from the presence of nearby quantum levels (e.g., valley states) that can compete with spins as qubits. The strong spin-orbit coupling in Ge quantum wells may be harnessed to implement electric-dipole spin resonance, leading to gate times of several nanoseconds for single-qubit rotations. The microscopic mechanism of this spin-orbit coupling is discussed, along with its implications for quantum gates based on electric-dipole spin resonance, stressing the importance of coupling terms that arise from the underlying cubic crystal field. Our results provide a theoretical foundation for recent experimental advances in Ge hole-spin qubits. △ Less

Submitted 30 January, 2021; v1 submitted 27 March, 2018; originally announced March 2018.

Comments: 1 pages

Journal ref: Phys. Rev. B 103, 125201 (2021)

Tight Binding Parametrization of Few-layer Black Phosphorus from First-Principles Calculations

Authors: Marcos G. Menezes, Rodrigo B. Capaz

Abstract: We employ a tight-binding parametrization based on the Slater Koster model in order to fit the band structures of single-layer, bilayer and bulk black phosphorus obtained from first-principles calculations. We find that our model, which includes 9 or 17 parameters depending on whether overlap is included or not, reproduces quite well the ab-initio band structures over a wide energy range, especial… ▽ More We employ a tight-binding parametrization based on the Slater Koster model in order to fit the band structures of single-layer, bilayer and bulk black phosphorus obtained from first-principles calculations. We find that our model, which includes 9 or 17 parameters depending on whether overlap is included or not, reproduces quite well the ab-initio band structures over a wide energy range, especially the occupied bands. We also find that the inclusion of overlap parameters improves the quality of the fit for the conduction bands. On the other hand, hopping and on-site energies are consistent throughout the different systems, which is an indication that our model is suitable for calculations on multilayer black phosphorus and more complex situations in which first-principles calculations become prohibitive, such as disordered systems and heterostructures with a large lattice mismatch. We also discuss the limitations of the model and how the fit procedure can be improved for a more accurate description of bands in the vicinity of the Fermi energy. △ Less

Submitted 12 December, 2017; v1 submitted 4 May, 2017; originally announced May 2017.

Electronic and structural properties of vacancies and hydrogen adsorbates on trilayer graphene

Authors: Marcos G. Menezes, Rodrigo B. Capaz

Abstract: Using ab initio calculations, we study the electronic and structural properties of vacancies and hydrogen adsorbates on trilayer graphene. Those defects are found to share similar low-energy electronic features, since they both remove a pz electron from the honeycomb lattice and induce a defect level near the Fermi energy. However, a vacancy also leaves unpaired $σ$ electrons on the lattice, which… ▽ More Using ab initio calculations, we study the electronic and structural properties of vacancies and hydrogen adsorbates on trilayer graphene. Those defects are found to share similar low-energy electronic features, since they both remove a pz electron from the honeycomb lattice and induce a defect level near the Fermi energy. However, a vacancy also leaves unpaired $σ$ electrons on the lattice, which lead to important structural differences and also contribute to magnetism. We explore both ABA and ABC stackings and compare properties such as formation energies, magnetic moments, spin density and the local density of states (LDOS) of the defect levels. These properties show a strong sensitivity to the layer in which the defect is placed and smaller sensitivities to sublattice placing and stacking type. Finally, for the ABC trilayer, we also study how these states behave in the presence of an external field, which opens a tunable gap in the band structure of the non-defective system. The pz defect states show a strong hybridization with band states as the field increases, with reduction and eventually loss of magnetization, and a non-magnetic, midgap-like state is found when the defect is at the middle layer. △ Less

Submitted 18 August, 2015; originally announced August 2015.

Journal ref: J. Phys.: Condens. Matter 27 (2015) 335302

Donor Wavefunctions in Si Gauged by STM Images

Authors: A. L. Saraiva, J. Salfi, J. Bocquel, B. Voisin, S. Rogge, Rodrigo B. Capaz, M. J. Calderón, Belita Koiller

Abstract: The triumph of effective mass theory in describing the energy spectrum of dopants does not guarantee that the model wavefunctions will withstand an experimental test. Such wavefunctions have recently been probed by scanning tunneling spectroscopy, revealing localized patterns of resonantly enhanced tunneling currents. We show that the shape of the conducting splotches resemble a cut through Kohn-L… ▽ More The triumph of effective mass theory in describing the energy spectrum of dopants does not guarantee that the model wavefunctions will withstand an experimental test. Such wavefunctions have recently been probed by scanning tunneling spectroscopy, revealing localized patterns of resonantly enhanced tunneling currents. We show that the shape of the conducting splotches resemble a cut through Kohn-Luttinger (KL) hydrogenic envelopes, which modulate the interfering Bloch states of conduction electrons. All the non-monotonic features of the current profile are consistent with the charge density fluctuations observed between successive {001} atomic planes, including a counterintuitive reduction of the symmetry - a heritage of the lowered point group symmetry at these planes. A model-independent analysis of the diffraction figure constrains the value of the electron wavevector to $k_0 = (0.82 \pm 0.03)(2π/a_{Si})$. Unlike prior measurements, averaged over a sizeable density of electrons, this estimate is obtained directly from isolated electrons. We further investigate the model-specific anisotropy of the wave function envelope, related to the effective mass anisotropy. This anisotropy appears in the KL variational wave function envelope as the ratio between Bohr radii b=a. We demonstrate that the central cell corrected estimates for this ratio are encouragingly accurate, leading to the conclusion that the KL theory is a valid model not only for energies but for wavefunctions as well. △ Less

Submitted 11 August, 2015; originally announced August 2015.

Comments: 12 pages, 8 figures

Journal ref: Phys. Rev. B 93, 045303 (2016)

Ab initio quasiparticle bandstructure of ABA and ABC-stacked graphene trilayers

Authors: Marcos G. Menezes, Rodrigo B. Capaz, Steven G. Louie

Abstract: We obtain the quasiparticle band structure of ABA and ABC-stacked graphene trilayers through ab initio density functional theory (DFT) and many-body quasiparticle calculations within the GW approximation. To interpret our results, we fit the DFT and GW $π$ bands to a low energy tight-binding model, which is found to reproduce very well the observed features near the K point. The values of the extr… ▽ More We obtain the quasiparticle band structure of ABA and ABC-stacked graphene trilayers through ab initio density functional theory (DFT) and many-body quasiparticle calculations within the GW approximation. To interpret our results, we fit the DFT and GW $π$ bands to a low energy tight-binding model, which is found to reproduce very well the observed features near the K point. The values of the extracted hopping parameters are reported and compared with available theoretical and experimental data. For both stackings, the self energy corrections lead to a renormalization of the Fermi velocity, an effect also observed in previous calculations on monolayer graphene. They also increase the separation between the higher energy bands, which is proportional to the nearest neighbor interlayer hopping parameter $γ_1$. Both features are brought to closer agreement with experiment through the self energy corrections. Finally, other effects, such as trigonal warping, electron-hole asymmetry and energy gaps are discussed in terms of the associated parameters. △ Less

Submitted 8 January, 2014; v1 submitted 7 January, 2014; originally announced January 2014.

Comments: 5 pages, 3 figures

Journal ref: Phys. Rev. B 89, 035431 (2014)

Systematic Determination of Absolute Absorption Cross-section of Individual Carbon Nanotubes

Authors: Kaihui Liu, Xiaoping Hong, Sangkook Choi, Chenhao Jin, Rodrigo B. Capaz, Jihoon Kim, Shaul Aloni, Wenlong Wang, Xuedong Bai, Steven G. Louie, Enge Wang, Feng Wang

Abstract: Determination of optical absorption cross-section is always among the central importance of understanding a material. However its realization on individual nanostructures, such as carbon nanotubes, is experimentally challenging due to the small extinction signal using conventional transmission measurements. Here we develop a technique based on polarization manipulation to enhance the sensitivity o… ▽ More Determination of optical absorption cross-section is always among the central importance of understanding a material. However its realization on individual nanostructures, such as carbon nanotubes, is experimentally challenging due to the small extinction signal using conventional transmission measurements. Here we develop a technique based on polarization manipulation to enhance the sensitivity of single-nanotube absorption spectroscopy by two-orders of magnitude. We systematically determine absorption cross-section over broad spectral range at single-tube level for more than 50 chirality-defined single-walled nanotubes. Our data reveals chirality-dependent one-dimensional photo-physics through the behaviours of exciton oscillator strength and lifetime. We also establish an empirical formula to predict absorption spectrum of any nanotube, which provides the foundation to determine quantum efficiencies in important photoluminescence and photovoltaic processes. △ Less

Submitted 13 November, 2013; originally announced November 2013.

Intermolecular interactions and substrate effects for an adamantane monolayer on the Au(111) surface

Authors: Yuki Sakai, Giang D. Nguyen, Rodrigo B. Capaz, Sinisa Coh, Ivan V. Pechenezhskiy, Xiaoping Hong, Feng Wang, Michael F. Crommie, Susumu Saito, Steven G. Louie, Marvin L. Cohen

Abstract: We study theoretically and experimentally the infrared (IR) spectrum of an adamantane monolayer on a Au(111) surface. Using a new STM-based IR spectroscopy technique (IRSTM) we are able to measure both the nanoscale structure of an adamantane monolayer on Au(111) as well as its infrared spectrum, while DFT-based ab initio calculations allow us to interpret the microscopic vibrational dynamics reve… ▽ More We study theoretically and experimentally the infrared (IR) spectrum of an adamantane monolayer on a Au(111) surface. Using a new STM-based IR spectroscopy technique (IRSTM) we are able to measure both the nanoscale structure of an adamantane monolayer on Au(111) as well as its infrared spectrum, while DFT-based ab initio calculations allow us to interpret the microscopic vibrational dynamics revealed by our measurements. We find that the IR spectrum of an adamantane monolayer on Au(111) is substantially modified with respect to the gas-phase IR spectrum. The first modification is caused by the adamantane--adamantane interaction due to monolayer packing and it reduces the IR intensity of the 2912 cm$^{-1}$ peak (gas phase) by a factor of 3.5. The second modification originates from the adamantane--gold interaction and it increases the IR intensity of the 2938 cm$^{-1}$ peak (gas phase) by a factor of 2.6, and reduces its frequency by 276 cm$^{-1}$. We expect that the techniques described here can be used for an independent estimate of substrate effects and intermolecular interactions in other diamondoid molecules, and for other metallic substrates. △ Less

Submitted 19 September, 2013; originally announced September 2013.

Comments: 24 pages, 10 figures

Half-metallicity induced by charge injection in hexagonal boron nitride clusters embedded in graphene

Authors: Marcos G. Menezes, Rodrigo B. Capaz

Abstract: We study the electronic structure and magnetic properties of h-BN triangular clusters embedded in graphene supercells. We find that, depending on the sizes of the clusters and the graphene separation region between them, spin polarization can be induced through charge doping or can be observed even in the neutral state. For these cases, half-metallicity is observed for certain charged states, whic… ▽ More We study the electronic structure and magnetic properties of h-BN triangular clusters embedded in graphene supercells. We find that, depending on the sizes of the clusters and the graphene separation region between them, spin polarization can be induced through charge doping or can be observed even in the neutral state. For these cases, half-metallicity is observed for certain charged states, which are otherwise metallic. In these half-metallic states, the spin density is concentrated near the edges of the clusters, in analogy to the more common predictions for half-metals in zigzag graphene nanoribbons and h-BN/graphene intercalated nanoribbons. Since experimental realizations of h-BN domains in graphene have already been reported, these heterostructures can be suitable candidates for nanoelectronics and spintronics applications. △ Less

Submitted 3 December, 2012; originally announced December 2012.

Journal ref: Phys. Rev. B 86, 195413 (2012)

The role of the disorder range and electronic energy in the graphene nanoribbons perfect transmission

Authors: Leandro R. F. Lima, Felipe A. Pinheiro, Rodrigo B. Capaz, Caio H. Lewenkopf, Eduardo R. Mucciolo

Abstract: Numerical calculations based on the recursive Green's functions method in the tight-binding approximation are performed to calculate the dimensionless conductance $g$ in disordered graphene nanoribbons with Gaussian scatterers. The influence of the transition from short- to long-ranged disorder on $g$ is studied as well as its effects on the formation of a perfectly conducting channel. We also inv… ▽ More Numerical calculations based on the recursive Green's functions method in the tight-binding approximation are performed to calculate the dimensionless conductance $g$ in disordered graphene nanoribbons with Gaussian scatterers. The influence of the transition from short- to long-ranged disorder on $g$ is studied as well as its effects on the formation of a perfectly conducting channel. We also investigate the dependence of electronic energy on the perfectly conducting channel. We propose and calculate a backscattering estimative in order to establish the connection between the perfectly conducting channel (with $g=1$) and the amount of intervalley scattering. △ Less

Submitted 28 October, 2012; originally announced October 2012.

Comments: 7 pages, 9 figures. To be published on Phys. Rev. B

Journal ref: Phys. Rev. B 86, 205111 (2012) [6 pages]

Structural and phonon properties of bundled single- and double-wall carbon nanotubes under pressure

Authors: Acrisio. L. Aguiar, Rodrigo B. Capaz, A. G. Souza Filho, Alfonso San-Miguel

Abstract: In this work, we report a theoretical coupled study of the structural and phonons properties of bundled single- and double-walled carbon nanotubes (DWNTs), under hydrostatic compression. Our results confirm drastic changes in volume of SWNTs in high-pressure regime as assigned by a phase transition from circular to collapsed phase which are strictly dependent on the tube diameter. For the DWNTs, t… ▽ More In this work, we report a theoretical coupled study of the structural and phonons properties of bundled single- and double-walled carbon nanotubes (DWNTs), under hydrostatic compression. Our results confirm drastic changes in volume of SWNTs in high-pressure regime as assigned by a phase transition from circular to collapsed phase which are strictly dependent on the tube diameter. For the DWNTs, those results show first a transformation to a polygonized shape of the outer tube and subsequently the simultaneous collapse of the outter and inner tube, at the onset of the inner tube ovalization. Before the DWNT collapse, phonon calculations reproduce the experimentally observed screening effect on the inner tube pressure induced blue shift both for RBM and tangential G$_z$ modes . Furthermore, the collapse of CNTs bundles induces a sudden redshift of tangential component in agreement with experimental studies. The G$_z$ band analysis of the SWNT collapsed tubes shows that the flattened regions of the tubes are at the origin of their G-band signal. This explains the observed graphite type pressure evolution of the G band in the collapsed phase and provides in addition a mean for the identification of collapsed tubes △ Less

Submitted 20 June, 2012; originally announced June 2012.

Comments: 18 pages, 6 figures

Anomalous insulator metal transition in boron nitride-graphene hybrid atomic layers

Authors: Li Song, Luis Balicas, Duncan J. Mowbray, Rodrigo B. Capaz, Kevin Storr, Lijie Ci, Deep Jariwala, Stefan Kurth, Steven G. Louie, Angel Rubio, Pulickel M. Ajayan

Abstract: The study of two-dimensional (2D) electronic systems is of great fundamental significance in physics. Atomic layers containing hybridized domains of graphene and hexagonal boron nitride (h-BNC) constitute a new kind of disordered 2D electronic system. Magneto-electric transport measurements performed at low temperature in vapor phase synthesized h-BNC atomic layers show a clear and anomalous trans… ▽ More The study of two-dimensional (2D) electronic systems is of great fundamental significance in physics. Atomic layers containing hybridized domains of graphene and hexagonal boron nitride (h-BNC) constitute a new kind of disordered 2D electronic system. Magneto-electric transport measurements performed at low temperature in vapor phase synthesized h-BNC atomic layers show a clear and anomalous transition from an insulating to a metallic behavior upon cooling. The observed insulator to metal transition can be modulated by electron and hole doping and by the application of an external magnetic field. These results supported by ab-initio calculations suggest that this transition in h-BNC has distinctly different characteristics when compared to other 2D electron systems and is the result of the coexistence between two distinct mechanisms, namely, percolation through metallic graphene networks and hopping conduction between edge states on randomly distributed insulating h-BN domains. △ Less

Submitted 29 November, 2011; v1 submitted 10 May, 2011; originally announced May 2011.

Comments: 9 pages, 15 figures

Quantifying defects in graphene via Raman spectroscopy at different excitation energies

Authors: L. G. Cançado, A. Jorio, E. H. Martins Ferreira, F. Stavale, C. A. Achete, R. B. Capaz, M. V. O. Moutinho, A. Lombardo, T. Kulmala, A. C. Ferrari

Abstract: We present a Raman study of Ar(+)-bombarded graphene samples with increasing ion doses. This allows us to have a controlled, increasing, amount of defects. We find that the ratio between the D and G peak intensities for a given defect density strongly depends on the laser excitation energy. We quantify this effect and present a simple equation for the determination of the point defect density in g… ▽ More We present a Raman study of Ar(+)-bombarded graphene samples with increasing ion doses. This allows us to have a controlled, increasing, amount of defects. We find that the ratio between the D and G peak intensities for a given defect density strongly depends on the laser excitation energy. We quantify this effect and present a simple equation for the determination of the point defect density in graphene via Raman spectroscopy for any visible excitation energy. We note that, for all excitations, the D to G intensity ratio reaches a maximum for an inter-defect distance ~3nm. Thus, a given ratio could correspond to two different defect densities, above or below the maximum. The analysis of the G peak width and its dispersion with excitation energy solves this ambiguity. △ Less

Submitted 3 May, 2011; v1 submitted 1 May, 2011; originally announced May 2011.

Comments: Fixed numerical factors in equations (5) and (6)

Journal ref: Nano Letters 11, 3190 (2011)

Theory of Magnetic Edge States in Chiral Graphene Nanoribbons

Authors: Oleg V. Yazyev, Rodrigo B. Capaz, Steven G. Louie

Abstract: Using a model Hamiltonian approach including electron-electron interactions, we systematically investigate the electronic structure and magnetic properties of chiral graphene nanoribbons. We show that the presence of magnetic edge states is an intrinsic feature of smooth graphene nanoribbons with chiral edges, and discover a number of structure-property relations. Specifically, we study the depend… ▽ More Using a model Hamiltonian approach including electron-electron interactions, we systematically investigate the electronic structure and magnetic properties of chiral graphene nanoribbons. We show that the presence of magnetic edge states is an intrinsic feature of smooth graphene nanoribbons with chiral edges, and discover a number of structure-property relations. Specifically, we study the dependence of magnetic moments and edge-state energy splittings on the nanoribbon width and chiral angle as well as the role of environmental screening effects. Our results address a recent experimental observation of signatures of magnetic ordering in chiral graphene nanoribbons and provide an avenue towards tuning their properties via the structural and environmental degrees of freedom. △ Less

Submitted 23 February, 2011; originally announced February 2011.

Comments: 4 pages, 5 figures

Journal ref: Phys. Rev. B 84, 115406 (2011)

Spatially Resolving Spin-split Edge States of Chiral Graphene Nanoribbons

Authors: Chenggang Tao, Liying Jiao, Oleg V. Yazyev, Yen-Chia Chen, Juanjuan Feng, Xiaowei Zhang, Rodrigo B. Capaz, James M. Tour, Alex Zettl, Steven G. Louie, Hongjie Dai, Michael F. Crommie

Abstract: A central question in the field of graphene-related research is how graphene behaves when it is patterned at the nanometer scale with different edge geometries. Perhaps the most fundamental shape relevant to this question is the graphene nanoribbon (GNR), a narrow strip of graphene that can have different chirality depending on the angle at which it is cut. Such GNRs have been predicted to exhibit… ▽ More A central question in the field of graphene-related research is how graphene behaves when it is patterned at the nanometer scale with different edge geometries. Perhaps the most fundamental shape relevant to this question is the graphene nanoribbon (GNR), a narrow strip of graphene that can have different chirality depending on the angle at which it is cut. Such GNRs have been predicted to exhibit a wide range of behaviour (depending on their chirality and width) that includes tunable energy gaps and the presence of unique one-dimensional (1D) edge states with unusual magnetic structure. Most GNRs explored experimentally up to now have been characterized via electrical conductivity, leaving the critical relationship between electronic structure and local atomic geometry unclear (especially at edges). Here we present a sub-nm-resolved scanning tunnelling microscopy (STM) and spectroscopy (STS) study of GNRs that allows us to examine how GNR electronic structure depends on the chirality of atomically well-defined GNR edges. The GNRs used here were chemically synthesized via carbon nanotube (CNT) unzipping methods that allow flexible variation of GNR width, length, chirality, and substrate. Our STS measurements reveal the presence of 1D GNR edge states whose spatial characteristics closely match theoretical expectations for GNR's of similar width and chirality. We observe width-dependent splitting in the GNR edge state energy bands, providing compelling evidence of their magnetic nature. These results confirm the novel electronic behaviour predicted for GNRs with atomically clean edges, and thus open the door to a whole new area of applications exploiting the unique magnetoelectronic properties of chiral GNRs. △ Less

Submitted 6 January, 2011; originally announced January 2011.

Report number: Nature Physics 7, 616-620 (2011)

Gap Opening by Asymmetric Doping in Graphene Bilayers

Authors: Marcos G. Menezes, Rodrigo B. Capaz, Jorge L. B. Faria

Abstract: We study the energy gap opening in the electronic spectrum of graphene bilayers caused by asym- metric doping. Both substitutional impurities (boron acceptors and nitrogen donors) and adsorbed potassium donors are considered. The gap evolution with dopant concentration is compared to the situation in which the asymmetry between the layers is induced by an external electric field. The effects of ad… ▽ More We study the energy gap opening in the electronic spectrum of graphene bilayers caused by asym- metric doping. Both substitutional impurities (boron acceptors and nitrogen donors) and adsorbed potassium donors are considered. The gap evolution with dopant concentration is compared to the situation in which the asymmetry between the layers is induced by an external electric field. The effects of adsorbed potassium are similar to that of an electric field, but substitutional impurities behave quite differently, showing smaller band gaps and a large sensitivity to disorder and sublattice occupation. △ Less

Submitted 11 December, 2010; originally announced December 2010.

Comments: 6 pages and 7 figures

Journal ref: Physical Review B 82, 245414 (2010)

Hyperfine interactions in silicon quantum dots

Authors: Lucy V. C. Assali, Helena M. Petrilli, Rodrigo B. Capaz, Belita Koiller, Xuedong Hu, S. Das Sarma

Abstract: We present an all-electron calculation of the hyperfine parameters for conduction electrons in Si, showing that: (i) all parameters scale linearly with the spin density at a $^{29}$Si site; (ii) the isotropic term is over 30 times larger than the anisotropic part; (iii) conduction electron charge density at a Si nucleus is consistent with experimental estimates; (iv) Overhauser fields in natural S… ▽ More We present an all-electron calculation of the hyperfine parameters for conduction electrons in Si, showing that: (i) all parameters scale linearly with the spin density at a $^{29}$Si site; (ii) the isotropic term is over 30 times larger than the anisotropic part; (iii) conduction electron charge density at a Si nucleus is consistent with experimental estimates; (iv) Overhauser fields in natural Si quantum dots (QDs) are two orders of magnitude smaller than in GaAs QDs. This reinforces the outstanding performance of Si in keeping spin coherence and opens access to reliable quantitative information aiming at spintronic applications. △ Less

Submitted 7 May, 2011; v1 submitted 6 July, 2010; originally announced July 2010.

Comments: 5 pages, 3 figures, 1 table. Published version

Journal ref: Phys. Rev. B 83, 165301 (2011)

Proposal for a single-molecule field-effect transistor for phonons

Authors: Marcos G. Menezes, Aldilene Saraiva-Souza, Jordan Del Nero, Rodrigo B. Capaz

Abstract: We propose a practical realization of a field-effect transistor for phonons. Our device is based on a single ionic polymeric molecule and it gives modulations as large as -25% in the thermal conductance for feasible temperatures and electric field magnitudes. Such effect can be achieved by reversibly switching the acoustic torsion mode into an optical mode through the coupling of an applied electr… ▽ More We propose a practical realization of a field-effect transistor for phonons. Our device is based on a single ionic polymeric molecule and it gives modulations as large as -25% in the thermal conductance for feasible temperatures and electric field magnitudes. Such effect can be achieved by reversibly switching the acoustic torsion mode into an optical mode through the coupling of an applied electric field to the dipole moments of the monomers. This device can pave the way to the future development of phononics at the nanoscale or molecular scale. △ Less

Submitted 29 June, 2010; originally announced June 2010.

Journal ref: Physical Review B 81, 012302 (2010)

Comment on "Wave-scattering formalism for thermal conductance in thin wires with surface disorder"

Authors: Marcos G. Menezes, Jordan Del Nero, Rodrigo B. Capaz, Luis G. C. Rego

Abstract: In their calculations based on the Landauer transport equation, Akguc and Gong [Phys. Rev. B 80, 195408 (2009)] obtained an expression for the heat conductance of a quantum wire valid in the ballistic regime and in the limit of vanishing temperature difference between reservoirs. Their result appears to be different from the one reported in the previous paper of Rego and Kirczenow [Phys. Rev. Lett… ▽ More In their calculations based on the Landauer transport equation, Akguc and Gong [Phys. Rev. B 80, 195408 (2009)] obtained an expression for the heat conductance of a quantum wire valid in the ballistic regime and in the limit of vanishing temperature difference between reservoirs. Their result appears to be different from the one reported in the previous paper of Rego and Kirczenow [Phys. Rev. Lett. 81, 232 (1998)], which led them to argue that their new result was the correct one. We show here that, in fact, both results are correct since different definitions for the dilogarithm function were used in those papers. Hence, comparisons between these two results should be done with care. △ Less

Submitted 26 June, 2010; originally announced June 2010.

Journal ref: Physical Review B 81, 117401 (2010)

Heat pumping in nanomechanical systems

Authors: Claudio Chamon, Eduardo R. Mucciolo, Liliana Arrachea, Rodrigo B. Capaz

Abstract: We propose using a phonon pumping mechanism to transfer heat from a cold to a hot body using a propagating modulation of the medium connecting the two bodies. This phonon pump can cool nanomechanical systems without the need for active feedback. We compute the lowest temperature that this refrigerator can achieve. We propose using a phonon pumping mechanism to transfer heat from a cold to a hot body using a propagating modulation of the medium connecting the two bodies. This phonon pump can cool nanomechanical systems without the need for active feedback. We compute the lowest temperature that this refrigerator can achieve. △ Less

Submitted 7 April, 2011; v1 submitted 24 June, 2010; originally announced June 2010.

Comments: 4 pages, 1 figure, published version

Journal ref: Phys. Rev. Lett. 106, 135504 (2011)

Intervalley coupling for interface-bound electrons in silicon: An effective mass study

Authors: A. L. Saraiva, M. J. Calderón, Rodrigo B. Capaz, Xuedong Hu, S. Das Sarma, Belita Koiller

Abstract: Orbital degeneracy of the electronic conduction band edge in silicon is a potential roadblock to the storage and manipulation of quantum information involving the electronic spin degree of freedom in this host material. This difficulty may be mitigated near an interface between Si and a barrier material, where intervalley scattering may couple states in the conduction ground state, leading to nond… ▽ More Orbital degeneracy of the electronic conduction band edge in silicon is a potential roadblock to the storage and manipulation of quantum information involving the electronic spin degree of freedom in this host material. This difficulty may be mitigated near an interface between Si and a barrier material, where intervalley scattering may couple states in the conduction ground state, leading to nondegenerate orbital ground and first excited states. The level splitting is experimentally found to have a strong sample dependence, varying by orders of magnitude for different interfaces and samples. The basic physical mechanisms leading to such coupling in different systems are addressed. We expand our recent study based on an effective mass approach, incorporating the full plane-wave expansions of the Bloch functions at the conduction band minima. Physical insights emerge naturally from a simple Si/barrier model. In particular, we present a clear comparison between ours and different approximations and formalisms adopted in the literature and establish the applicability of these approximations in different physical scenarios. △ Less

Submitted 14 November, 2011; v1 submitted 16 June, 2010; originally announced June 2010.

Comments: 11 pages, 3 figures, 2 tables

Journal ref: Phys. Rev. B 84, 155320 (2011)

Selection Rules for One- and Two-Photon Absorption by Excitons in Carbon Nanotubes

Authors: Eduardo B. Barros, Rodrigo. B. Capaz, Ado Jorio, Georgii G. Samsonidze, Antonio G. Souza Filho, Sohrab Ismail-Beigi, Catalin D. Spataru, Steven G. Louie, Gene Dresselhaus, Mildred S. Dresselhaus

Abstract: Recent optical absorption/emission experiments showed that the lower energy optical transitions in carbon nanotubes are excitonic in nature, as predicted by theory. These experiments were based on the symmetry aspects of free electron-hole states and bound excitonic states. The present work shows, however, that group theory does not predict the selection rules needed to explain the two photon ex… ▽ More Recent optical absorption/emission experiments showed that the lower energy optical transitions in carbon nanotubes are excitonic in nature, as predicted by theory. These experiments were based on the symmetry aspects of free electron-hole states and bound excitonic states. The present work shows, however, that group theory does not predict the selection rules needed to explain the two photon experiments. We obtain the symmetries and selection rules for the optical transitions of excitons in single-wall carbon nanotubes within the approach of the group of the wavevector, thus providing important information for the interpretation of theoretical and experimental optical spectra of these materials. △ Less

Submitted 29 June, 2006; originally announced June 2006.

Comments: 4 pages, 1 figure, 1 table

Journal ref: Phys. Rev. B 73, 241406 (2006)

Diameter and Chirality Dependence of Exciton Properties in Carbon Nanotubes

Authors: Rodrigo B. Capaz, Catalin D. Spataru, Sohrab Ismail-Beigi, Steven G. Louie

Abstract: We calculate the diameter and chirality dependences of the binding energies, sizes, and bright-dark splittings of excitons in semiconducting single-wall carbon nanotubes (SWNTs). Using results and insights from {\it ab initio} calculations, we employ a symmetry-based, variational method based on the effective-mass and envelope-function approximations using tight-binding wavefunctions. Binding en… ▽ More We calculate the diameter and chirality dependences of the binding energies, sizes, and bright-dark splittings of excitons in semiconducting single-wall carbon nanotubes (SWNTs). Using results and insights from {\it ab initio} calculations, we employ a symmetry-based, variational method based on the effective-mass and envelope-function approximations using tight-binding wavefunctions. Binding energies and spatial extents show a leading dependence with diameter as $1/d$ and $d$, respectively, with chirality corrections providing a spread of roughly 20% with a strong family behavior. Bright-dark exciton splittings show a $1/d^2$ leading dependence. We provide analytical expressions for the binding energies, sizes, and splittings that should be useful to guide future experiments. △ Less

Submitted 18 June, 2006; originally announced June 2006.

Effect of post-growth annealing on the optical properties of InAs/GaAs quantum dots: A tight-binding study

Authors: R. Santoprete, P. Kratzer, M. Scheffler, R. B. Capaz, Belita Koiller

Abstract: We present an atomistic study of the strain field, the one-particle electronic spectrum and the oscillator strength of the fundamental optical transition in chemically disordered In$_{x}$Ga$_{1-x}$As pyramidal quantum dots (QDs). Interdiffusion across the interfaces of an originally ``pure'' InAs dot buried in a GaAs matrix is simulated through a simple model, leading to atomic configurations wh… ▽ More We present an atomistic study of the strain field, the one-particle electronic spectrum and the oscillator strength of the fundamental optical transition in chemically disordered In$_{x}$Ga$_{1-x}$As pyramidal quantum dots (QDs). Interdiffusion across the interfaces of an originally ``pure'' InAs dot buried in a GaAs matrix is simulated through a simple model, leading to atomic configurations where the abrupt hetero-interfaces are replaced by a spatially inhomogeneous composition profile $x$. Structural relaxation and the strain field calculations are performed through the Keating valence force field (VFF) model, while the electronic and optical properties are determined within the empirical tight-binding (ETB) approach. We analyze the relative impact of two different aspects of the chemical disorder, namely: (i) the effect of the strain relief inside the QD, and (ii) the purely chemical effect due to the group-III atomic species interdiffusion. We find that these effects may be quantitatively comparable, significantly affecting the electronic and optical properties of the dot. Our results are discussed in comparison with recent luminescence studies of intermixed QDs. △ Less

Submitted 11 October, 2005; originally announced October 2005.

Comments: 3 figures

Theory and it ab initio calculation of radiative lifetime of excitons in semiconducting carbon nanotubes

Authors: Catalin D. Spataru, Sohrab Ismail-Beigi, Rodrigo B. Capaz, Steven G. Louie

Abstract: We present theoretical analysis and first-principles calculation of the radiative lifetime of excitons in semiconducting carbon nanotubes. An intrinsic lifetime of the order of 10 ps is computed for the lowest optically active bright excitons. The intrinsic lifetime is however a rapid increasing function of the exciton momentum. Moreover, the electronic structure of the nanotubes dictates the ex… ▽ More We present theoretical analysis and first-principles calculation of the radiative lifetime of excitons in semiconducting carbon nanotubes. An intrinsic lifetime of the order of 10 ps is computed for the lowest optically active bright excitons. The intrinsic lifetime is however a rapid increasing function of the exciton momentum. Moreover, the electronic structure of the nanotubes dictates the existence of dark excitons nearby in energy to each bright exciton. Both effects strongly influence measured lifetime. Assuming a thermal occupation of bright and dark exciton bands, we find an effective lifetime of the order of 10 ns at room temperature, in good accord with recent experiments. △ Less

Submitted 7 July, 2005; v1 submitted 4 July, 2005; originally announced July 2005.

Comments: 12 pages, 3 figures

Silicon-based spin and charge quantum computation

Authors: Belita Koiller, Xuedong Hu, R. B. Capaz, A. S. Martins, S. Das Sarma

Abstract: Silicon-based quantum-computer architectures have attracted attention because of their promise for scalability and their potential for synergetically utilizing the available resources associated with the existing Si technology infrastructure. Electronic and nuclear spins of shallow donors (e.g. phosphorus) in Si are ideal candidates for qubits in such proposals due to the relatively long spin co… ▽ More Silicon-based quantum-computer architectures have attracted attention because of their promise for scalability and their potential for synergetically utilizing the available resources associated with the existing Si technology infrastructure. Electronic and nuclear spins of shallow donors (e.g. phosphorus) in Si are ideal candidates for qubits in such proposals due to the relatively long spin coherence times. For these spin qubits, donor electron charge manipulation by external gates is a key ingredient for control and read-out of single-qubit operations, while shallow donor exchange gates are frequently invoked to perform two-qubit operations. More recently, charge qubits based on tunnel coupling in P$_2^+$ substitutional molecular ions in Si have also been proposed. We discuss the feasibility of the building blocks involved in shallow donor quantum computation in silicon, taking into account the peculiarities of silicon electronic structure, in particular the six degenerate states at the conduction band edge. We show that quantum interference among these states does not significantly affect operations involving a single donor, but leads to fast oscillations in electron exchange coupling and on tunnel-coupling strength when the donor pair relative position is changed on a lattice-parameter scale. These studies illustrate the considerable potential as well as the tremendous challenges posed by donor spin and charge as candidates for qubits in silicon. △ Less

Submitted 6 May, 2005; originally announced May 2005.

Comments: Review paper (invited) - to appear in Annals of the Brazilian Academy of Sciences

Journal ref: An. Acad. Bras. Cienc. 77 (2), 201-222 (2005)

Theory of Sodium Ordering in NaxCoO2

Authors: Peihong Zhang, Rodrigo B. Capaz, Marvin L. Cohen, Steven G. Louie

Abstract: The ordering of Na ions in Na$_x$CoO$_2$ is investigated systematically by combining detailed density functional theory (DFT) studies with model calculations. Various ground state ordering patterns are identified, and they are in excellent agreement with avaliable experimental results. Our results suggest that the primary driving force for the Na ordering is the screened Coulomb interaction amon… ▽ More The ordering of Na ions in Na$_x$CoO$_2$ is investigated systematically by combining detailed density functional theory (DFT) studies with model calculations. Various ground state ordering patterns are identified, and they are in excellent agreement with avaliable experimental results. Our results suggest that the primary driving force for the Na ordering is the screened Coulomb interaction among Na ions. Possible effects of the Na ordering on the electronic structure of the CoO$_2$ layer are discussed. We propose that the nonexistence of a charge ordered insulating state at $x = 2/3$ is due to the lack of a commensurate Na ordering pattern, whereas an extremely stable Na ordering at $x = 0.5$ enhances the charge ordering tendency, resulting in an insulating state as observed experimentally. △ Less

Submitted 2 February, 2005; originally announced February 2005.

Comments: Physical Review B, in press

Temperature Dependence of the Band Gap of Semiconducting Carbon Nanotubes

Authors: Rodrigo B. Capaz, Catalin D. Spataru, Paul Tangney, Marvin L. Cohen, Steven G. Louie

Abstract: The temperature dependence of the band gap of semiconducting single-wall carbon nanotubes (SWNTs) is calculated by direct evaluation of electron-phonon couplings within a ``frozen-phonon'' scheme. An interesting diameter and chirality dependence of $E_g(T)$ is obtained, including non-monotonic behavior for certain tubes and distinct ``family'' behavior. These results are traced to a strong and c… ▽ More The temperature dependence of the band gap of semiconducting single-wall carbon nanotubes (SWNTs) is calculated by direct evaluation of electron-phonon couplings within a ``frozen-phonon'' scheme. An interesting diameter and chirality dependence of $E_g(T)$ is obtained, including non-monotonic behavior for certain tubes and distinct ``family'' behavior. These results are traced to a strong and complex coupling between band-edge states and the lowest-energy optical phonon modes in SWNTs. The $E_g(T)$ curves are modeled by an analytic function with diameter and chirality dependent parameters; these provide a valuable guide for systematic estimates of $E_g(T)$ for any given SWNT. Magnitudes of the temperature shifts at 300 K are smaller than 12 meV and should not affect $(n,m)$ assignments based on optical measurements. △ Less

Submitted 9 December, 2004; originally announced December 2004.

Comments: To appear in Phys. Rev. Lett

Group V Mixing Effects in the Structural and Optical Properties of (ZnSi)1/2(P)1/4(As)1/4

Authors: A. A. Leitão, R. B. Capaz

Abstract: We present {\it ab initio} total energy and band structure calculations based on Density Funtional Theory (DFT) within the Local Density Aproximation (LDA) on group-V mixing effects in the optoelectronic material $(ZnSi)_{1/2}P_{1/4}As_{3/4}$. This compound has been recently proposed by theoretical design as an optically active material in the 1.5 $μ$m (0.8 eV) fiber optics frequency window and… ▽ More We present {\it ab initio} total energy and band structure calculations based on Density Funtional Theory (DFT) within the Local Density Aproximation (LDA) on group-V mixing effects in the optoelectronic material $(ZnSi)_{1/2}P_{1/4}As_{3/4}$. This compound has been recently proposed by theoretical design as an optically active material in the 1.5 $μ$m (0.8 eV) fiber optics frequency window and with a monolithic integration with the Si (001) surface. Our results indicate that alloy formation in the group V planes would likely occur at typical growth conditions. In addition, desired features such as in-plane lattice constant and energy gap are virtually unchanged and the optical oscillator strength for band-to-band transitions is increased by a factor of 6 due to alloying. △ Less

Submitted 30 September, 2004; originally announced September 2004.

Journal ref: Phys. Rev. B 70, 085207 (2004)

Hydrostatic Pressure Effects on the Structural and Electronic Properties of Carbon Nanotubes

Authors: Rodrigo B. Capaz, Catalin D. Spataru, Paul Tangney, Marvin L. Cohen, Steven G. Louie

Abstract: We study the structural and electronic properties of isolated single-wall carbon nanotubes (SWNTs) under hydrostatic pressure using a combination of theoretical techniques: Continuum elasticity models, classical molecular dynamics simulations, tight-binding electronic structure methods, and first-principles total energy calculations within the density-functional and pseudopotential frameworks. F… ▽ More We study the structural and electronic properties of isolated single-wall carbon nanotubes (SWNTs) under hydrostatic pressure using a combination of theoretical techniques: Continuum elasticity models, classical molecular dynamics simulations, tight-binding electronic structure methods, and first-principles total energy calculations within the density-functional and pseudopotential frameworks. For pressures below a certain critical pressure $P_c$, the SWNTs' structure remains cylindrical and the Kohn-Sham energy gaps of semiconducting SWNTs have either positive or negative pressure coefficients depending on the value of $(n,m)$, with a distinct "family" (of the same $n-m$) behavior. The diameter and chirality dependence of the pressure coefficients can be described by a simple analytical expression. At $P_c$, molecular-dynamics simulations predict that isolated SWNTs undergo a pressure-induced symmetry-breaking transformation from a cylindrical shape to a collapsed geometry. This transition is described by a simple elastic model as arising from the competition between the bond-bending and $PV$ terms in the enthalpy. The good agreement between calculated and experimental values of $P_c$ provides a strong support to the ``collapse'' interpretation of the experimental transitions in bundles. △ Less

Submitted 9 September, 2004; originally announced September 2004.

Comments: To appear in the Proceedings of the 11th International Conference on High Pressure Semiconductor Physics (invited paper)

Silicon-based spin quantum computation and the shallow donor exchange gate

Authors: Belita Koiller, R. B. Capaz, X. Hu, S. Das Sarma

Abstract: Proposed silicon-based quantum-computer architectures have attracted attention because of their promise for scalability and their potential for synergetically utilizing the available resources associated with the existing Si technology infrastructure. Electronic and nuclear spins of shallow donors (e.g. phosphorus) in Si are ideally suited candidates for qubits in such proposals, where shallow d… ▽ More Proposed silicon-based quantum-computer architectures have attracted attention because of their promise for scalability and their potential for synergetically utilizing the available resources associated with the existing Si technology infrastructure. Electronic and nuclear spins of shallow donors (e.g. phosphorus) in Si are ideally suited candidates for qubits in such proposals, where shallow donor exchange gates are frequently invoked to perform two-qubit operations. An important potential problem in this context is that intervalley interference originating from the degeneracy in the Si conduction-band edge causes fast oscillations in donor exchange coupling, which imposes significant constraints on the Si quantum-computer architecture. We discuss the theoretical origin of such oscillations. Considering two substitutional donors in Si, we present a systematic statistical study of the correlation between relative position distributions and the resulting exchange distributions. △ Less

Submitted 7 July, 2004; originally announced July 2004.

Comments: Submitted to the proceedings of the 27th International Conference on the Physics of Semiconductors

Journal ref: 27th International Conference on the Physics of Semiconductors, AIP Conference Proceedings 772, Ed: J. Menéndez and C. G. Van de Walle, pp. 1441-1444, (2005).

Shallow donor wavefunctions and donor-pair exchange in silicon: Ab initio theory and floating-phase Heitler-London approach

Authors: Belita Koiller, R. B. Capaz, Xuedong Hu, S. Das Sarma

Abstract: Electronic and nuclear spins of shallow donors in Silicon are attractive candidates for qubits in quantum computer proposals. Shallow donor exchange gates are frequently invoked to preform two-qubit operations in such proposals. We study shallow donor electron properties in Si within the Kohn-Luttinger envelope function approach, incorporating the full Bloch states of the six band edges of Si co… ▽ More Electronic and nuclear spins of shallow donors in Silicon are attractive candidates for qubits in quantum computer proposals. Shallow donor exchange gates are frequently invoked to preform two-qubit operations in such proposals. We study shallow donor electron properties in Si within the Kohn-Luttinger envelope function approach, incorporating the full Bloch states of the six band edges of Si conduction band, obtained from {\it ab initio} calculations within the density-functional and pseudopotential frameworks. Inter-valley interference between the conduction-band-edge states of Si leads to oscillatory behavior in the charge distribution of one-electron bound states and in the exchange coupling in two-electron states. The behavior in the donor electron charge distribution is strongly influenced by interference from the plane-wave and periodic parts of the Bloch functions. For two donors, oscillations in the exchange coupling calculated within the Heitler-London (HL) approach are due to the plane-wave parts of the Bloch functions alone, which are pinned to the impurity sites. The robustness of this result is assessed by relaxing the phase pinning to the donor sites. We introduce a more general theoretical scheme, the floating-phase HL, from which the previously reported donor exchange oscillatory behavior is qualitatively and quantitatively confirmed. The floating-phase formalism provides a ``handle'' on how to theoretically anticipate the occurrence of oscillatory behavior in electronic properties associated with electron bound states in more general confining potentials, such as in quantum dots. △ Less

Submitted 26 November, 2004; v1 submitted 10 February, 2004; originally announced February 2004.

Comments: published version

Journal ref: Phys. Rev. B 70, 115207 (2004)