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Revealing the electronic band structure of trilayer graphene on SiC: An angle-resolved photoemission study
Authors:
Camilla Coletti,
Stiven Forti,
Alessandro Principi,
Konstantin V. Emtsev,
Alexei A. Zakharov,
Kevin M. Daniels,
Biplob K. Daas,
M. V. S. Chandrashekhar,
Thierry Ouisse,
Didier Chaussende,
Allan H. MacDonald,
Marco Polini,
Ulrich Starke
Abstract:
In recent times, trilayer graphene has attracted wide attention owing to its stacking and electric field dependent electronic properties. However, a direct and well-resolved experimental visualization of its band structure has not yet been reported. In this work, we present angle resolved photoemission spectroscopy (ARPES) data which show with high resolution the electronic band structure of trila…
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In recent times, trilayer graphene has attracted wide attention owing to its stacking and electric field dependent electronic properties. However, a direct and well-resolved experimental visualization of its band structure has not yet been reported. In this work, we present angle resolved photoemission spectroscopy (ARPES) data which show with high resolution the electronic band structure of trilayer graphene obtained on α-SiC(0001) and β-SiC(111) via hydrogen intercalation. Electronic bands obtained from tight-binding calculations are fitted to the experimental data to extract the interatomic hopping parameters for Bernal and rhombohedral stacked trilayers. Low energy electron microscopy (LEEM) measurements demonstrate that the trilayer domains extend over areas of tens of square micrometers, suggesting the feasibility of exploiting this material in electronic and photonic devices. Furthermore, our results suggest that on SiC substrates the occurrence of rhombohedral stacked trilayer is significantly higher than in natural bulk graphite.
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Submitted 28 February, 2014;
originally announced February 2014.
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A comparative study of SiC epitaxial growth in vertical hotwall CVD reactor using silane and dichlorosilane precursor gases
Authors:
Tawhid Rana,
MVS Chandrashekhar,
Haizheng Song,
Tangali S. Sudarshan
Abstract:
SiC epitaxial films grown in an inverted chimney CVD reactor are analyzed and compared for growth rates, doping concentration and surface morphology using silane-propane-hydrogen and dichlorosilane (DCS)-propane-hydrogen chemistry systems. A general 1-D analytical model is presented to estimate the diffusivity of precursor gases, boundary layer thickness and growth rates for both gas systems. Deco…
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SiC epitaxial films grown in an inverted chimney CVD reactor are analyzed and compared for growth rates, doping concentration and surface morphology using silane-propane-hydrogen and dichlorosilane (DCS)-propane-hydrogen chemistry systems. A general 1-D analytical model is presented to estimate the diffusivity of precursor gases, boundary layer thickness and growth rates for both gas systems. Decomposition of precursor gases into Si growth species is investigated by a commercial simulation tool, Virtual Reactor (VR). DCS suppresses the formation of elemental Si at lower pressures, reduces precursor losses, and leads to increased growth rate. However, at higher pressures, even DCS decomposes into elemental Si, which contributes to high Si depletion, limiting the maximum achievable growth rate. Reduction of Si loss using DCS is verified by mass measurements of parasitic depositions in the injector tube. The doping concentration of the epitaxial film is governed by the effective C/Si ratio at the growth surface rather than the inlet C/Si ratio, which is examined at various growth pressures. In addition to the widely known Si-depletion, C-depletion is also shown to exist and it plays a critical role in determining the doping concentration at various growth conditions. Increased roughness for the DCS growth at higher pressures is addressed and attributed to excessive HCl etching at higher pressures.
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Submitted 10 February, 2013; v1 submitted 29 August, 2012;
originally announced August 2012.
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Study of epitaxial graphene on non-polar 6H-SiC faces
Authors:
B. K. Daas,
K. Daniels,
S. Shetu,
T. S. Sudarshan,
M. V. S. Chandrashekhar
Abstract:
We present epitaxial graphene (EG) growth on non-polar a-plane and m-plane 6H-SiC faces where material characterization is compared with that known for EG grown on polar faces. Atomic force microscopy (AFM) surface morphology exhibits nanocrystalline graphite like features for non-polar faces, while the polar silicon face shows step like features. This differing behavior is attributed to the lack…
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We present epitaxial graphene (EG) growth on non-polar a-plane and m-plane 6H-SiC faces where material characterization is compared with that known for EG grown on polar faces. Atomic force microscopy (AFM) surface morphology exhibits nanocrystalline graphite like features for non-polar faces, while the polar silicon face shows step like features. This differing behavior is attributed to the lack of a hexagonal template on the non-polar faces. Non-polar faces also exhibit greater disorder and red shift of all Raman peaks (D, G and 2D) with increasing temperature. This is attributed to decreasing stress with increasing temperature. These variations provide evidence of different EG growth mechanisms on non-polar and polar faces, likely due to differences in surface free energy. We also present differences between a-plane EG and m-plane EG in terms of morphology, thickness and Raman characteristics
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Submitted 1 March, 2012;
originally announced March 2012.
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Molecular Gas Adsorption Induced Carrier Transport Studies of Epitaxial Graphene using IR Reflection Spectroscopy
Authors:
B. K. Daas,
W. K. Nomani,
K. M. Daniels,
T. S. Sudarshan,
Goutam Koley,
M. V. S. Chandrashekhar
Abstract:
We investigate molecular adsorption doping by electron withdrawing NO2 and electron donating NH3 on epitaxial graphene grown on C-face SiC substrates. Amperometric measurements show conductance changes upon introduction of molecular adsorbents on epitaxial graphene. Conductance changes are a trade-off between carrier concentration and scattering, and manifest at direct current and optical frequenc…
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We investigate molecular adsorption doping by electron withdrawing NO2 and electron donating NH3 on epitaxial graphene grown on C-face SiC substrates. Amperometric measurements show conductance changes upon introduction of molecular adsorbents on epitaxial graphene. Conductance changes are a trade-off between carrier concentration and scattering, and manifest at direct current and optical frequencies. We therefore investigate changes in the infrared (IR) reflection spectra to correlate these two frequency domains, as reflectance changes are due to a change of epitaxial graphene (EG) surface conductance. We match theory with experimental IR data and extract changes in carrier concentration and scattering due to gas adsorption. Finally, we separate the intraband and interband scattering contributions to the electronic transport under gas adsorption. The results indicate that, under gas adsorption, the influence of interband scattering cannot be neglected, even at DC.
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Submitted 23 January, 2012;
originally announced January 2012.
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High purity semi-insulating 4H-SiC epitaxial layers by Defect-Competition Epitaxy
Authors:
MVS Chandrashekhar,
Iftekhar Chowdhury,
P. Kaminski,
R. Kozlowski,
P. B. Klein,
Tangali Sudarshan
Abstract:
Thick, high-purity semi-insulating (SI)homoepitaxial layers on Si-face 4H-SiC weregrownsystematically, with resistivity \geq 109Ω-cmby maintaining high C/Si ratios 1.3-15 during growth.Comparison of secondary ion mass spectra betweenlow-dopedepilayers grown at C/Si ratio<1.3andSI-epilayers grown at C/Si ratio>1.3 showed little difference in residual impurity concentrations. A reconciliation of imp…
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Thick, high-purity semi-insulating (SI)homoepitaxial layers on Si-face 4H-SiC weregrownsystematically, with resistivity \geq 109Ω-cmby maintaining high C/Si ratios 1.3-15 during growth.Comparison of secondary ion mass spectra betweenlow-dopedepilayers grown at C/Si ratio<1.3andSI-epilayers grown at C/Si ratio>1.3 showed little difference in residual impurity concentrations. A reconciliation of impurity concentration with measured resistivity indicated a compensating trap concentration of ~1015cm-3present only in the SI-epilayers. High- resolution photo induced transient spectroscopy (HRPITS) identified themas Si-vacancy related deep centers, with no detectable EH6/7 and Z1/2levels. Recombination lifetimes ~5ns suggest application in fast-switching power devices.
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Submitted 22 April, 2011;
originally announced April 2011.
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Doping Dependence of Thermal Oxidation on n-type 4H-SiC
Authors:
B. K. Daas,
M. M. Islam,
I. A. Chowdhury,
F. Zhao,
T. S. Sudarshan,
M. V. S. Chandrashekhar
Abstract:
The doping dependence of dry thermal oxidation rates in n-type 4H-SiC was investigated. The oxidation was performed in the temperature range 1000C to 1200C for samples with nitrogen doping in the range of 6.5e15/cm3 to 9.3e18/cm3, showing a clear doping dependence. Samples with higher doping concentrations displayed higher oxidation rates. The results were interpreted using a modified Deal-Grove m…
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The doping dependence of dry thermal oxidation rates in n-type 4H-SiC was investigated. The oxidation was performed in the temperature range 1000C to 1200C for samples with nitrogen doping in the range of 6.5e15/cm3 to 9.3e18/cm3, showing a clear doping dependence. Samples with higher doping concentrations displayed higher oxidation rates. The results were interpreted using a modified Deal-Grove model. Linear and parabolic rate constants and activation energies were extracted. Increasing nitrogen led to an increase in linear rate constant pre-exponential factor from 10-6m/s to 10-2m/s and the parabolic rate constant pre-exponential factor from 10e9m2/s to 10e6m2/s. The increase in linear rate constant was attributed to defects from doping-induced lattice mismatch, which tend to be more reactive than bulk crystal regions. The increase in the diffusion-limited parabolic rate constant was attributed to degradation in oxide quality originating from the doping-induced lattice mismatch. This degradation was confirmed by the observation of a decrease in optical density of the grown oxide films from 1.4 to 1.24. The linear activation energy varied from 1.6eV to 2.8eV, while the parabolic activation energy varied from 2.7eV to 3.3eV, increasing with doping concentration. These increased activation energies were attributed to higher nitrogen content, leading to an increase in effective bond energy stemming from the difference in C-Si (2.82eV) and Si-N (4.26eV) binding energies. This work provides crucial information in the engineering of SiO2 dielectrics for SiC MOS structures, which typically involve regions of very different doping concentrations, and suggests that thermal oxidation at high doping concentrations in SiC may be defect mediated.
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Submitted 4 October, 2010;
originally announced October 2010.
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Ultrafast Relaxation Dynamics of Hot Optical Phonons in Graphene
Authors:
Haining Wang,
Jared H. Strait,
Paul A. George,
Shriram Shivaraman,
Virgil B. Shields,
Mvs Chandrashekhar,
Jeonghyun Hwang,
Carlos S. Ruiz-Vargas,
Farhan Rana,
Michael G. Spencer,
Jiwoong Park
Abstract:
Using ultrafast optical pump-probe spectroscopy, we study the relaxation dynamics of hot optical phonons in few-layer and multi-layer graphene films grown by epitaxy on silicon carbide substrates and by chemical vapor deposition on nickel substrates. In the first few hundred femtoseconds after photoexcitation, the hot carriers lose most of their energy to the generation of hot optical phonons wh…
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Using ultrafast optical pump-probe spectroscopy, we study the relaxation dynamics of hot optical phonons in few-layer and multi-layer graphene films grown by epitaxy on silicon carbide substrates and by chemical vapor deposition on nickel substrates. In the first few hundred femtoseconds after photoexcitation, the hot carriers lose most of their energy to the generation of hot optical phonons which then present the main bottleneck to subsequent carrier cooling. Optical phonon cooling on short time scales is found to be independent of the graphene growth technique, the number of layers, and the type of the substrate. We find average phonon lifetimes in the 2.5-2.55 ps range. We model the relaxation dynamics of the coupled carrier-phonon system with rate equations and find a good agreement between the experimental data and the theory. The extracted optical phonon lifetimes agree very well with the theory based on anharmonic phonon interactions.
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Submitted 28 December, 2009; v1 submitted 26 September, 2009;
originally announced September 2009.
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Carrier Recombination and Generation Rates for Intravalley and Intervalley Phonon Scattering in Graphene
Authors:
Farhan Rana,
Paul A. George,
Jared H. Strait,
Jahan Dawlaty,
Shriram Shivaraman,
Mvs Chandrashekhar,
Michael G. Spencer
Abstract:
Electron-hole generation and recombination rates for intravalley and intervalley phonon scattering in Graphene are presented. The transverse and the longitudinal optical phonon modes ($E_{2g}$-modes) near the zone center ($Γ$-point) contribute to intravalley interband carrier scattering. At the zone edge ($K(K')$-point), only the transverse optical phonon mode ($A'_{1}$-mode) contributes signifi…
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Electron-hole generation and recombination rates for intravalley and intervalley phonon scattering in Graphene are presented. The transverse and the longitudinal optical phonon modes ($E_{2g}$-modes) near the zone center ($Γ$-point) contribute to intravalley interband carrier scattering. At the zone edge ($K(K')$-point), only the transverse optical phonon mode ($A'_{1}$-mode) contributes significantly to intervalley interband scattering with recombination rates faster than those due to zone center phonons. The calculated recombination times range from less than a picosecond to more than hundreds of picoseconds and are strong functions of temperature and electron and hole densities. The theoretical calculations agree well with experimental measurements of the recombination rates of photoexcited carriers in graphene.
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Submitted 5 January, 2009; v1 submitted 2 January, 2009;
originally announced January 2009.
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Emission of Terahertz Radiation from SiC
Authors:
Jared H. Strait,
Paul A. George,
Jahan Dawlaty,
Shriram Shivaraman,
Mvs Chandrashekhar,
Farhan Rana,
Michael G. Spencer
Abstract:
We report the emission of strong coherent broadband terahertz radiation from 6H-Silicon-Carbide (SiC) excited with optical pulses. The measured terahertz spectral signal-to-noise ratio is better than one thousand. We determine that the terahertz radiation is generated via second order optical nonlinearity (optical rectification). We present a measurement of the ratio of nonlinear susceptibility…
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We report the emission of strong coherent broadband terahertz radiation from 6H-Silicon-Carbide (SiC) excited with optical pulses. The measured terahertz spectral signal-to-noise ratio is better than one thousand. We determine that the terahertz radiation is generated via second order optical nonlinearity (optical rectification). We present a measurement of the ratio of nonlinear susceptibility tensor elements $χ_{zzz}^{(2)}/χ_{zxx}^{(2)}$ and the complex index of refraction of silicon carbide at THz frequencies.
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Submitted 13 May, 2009; v1 submitted 4 September, 2008;
originally announced September 2008.
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Thickness Estimation of Epitaxial Graphene on SiC using Attenuation of Substrate Raman Intensity
Authors:
Shriram Shivaraman,
M. V. S. Chandrashekhar,
John J. Boeckl,
Michael G. Spencer
Abstract:
A simple, non-invasive method using Raman spectroscopy for the estimation of the thickness of graphene layers grown epitaxially on silicon carbide (SiC) is presented, enabling simultaneous determination of thickness, grain size and disorder using the spectra. The attenuation of the substrate Raman signal due to the graphene overlayer is found to be dependent on the graphene film thickness deduce…
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A simple, non-invasive method using Raman spectroscopy for the estimation of the thickness of graphene layers grown epitaxially on silicon carbide (SiC) is presented, enabling simultaneous determination of thickness, grain size and disorder using the spectra. The attenuation of the substrate Raman signal due to the graphene overlayer is found to be dependent on the graphene film thickness deduced from X-ray photoelectron spectroscopy and transmission electron microscopy of the surfaces. We explain this dependence using an absorbing overlayer model. This method can be used for mapping graphene thickness over a region and is capable of estimating thickness of multilayer graphene films beyond that possible by XPS and Auger electron spectroscopy (AES).
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Submitted 31 March, 2009; v1 submitted 21 July, 2008;
originally announced July 2008.
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Ultrafast Optical-Pump Terahertz-Probe Spectroscopy of the Carrier Relaxation and Recombination Dynamics in Epitaxial Graphene
Authors:
Paul A. George,
Jared Strait,
Jahan Dawlaty,
Shriram Shivaraman,
Mvs Chandrashekhar,
Farhan Rana,
Michael G. Spencer
Abstract:
The ultrafast relaxation and recombination dynamics of photogenerated electrons and holes in epitaxial graphene are studied using optical-pump Terahertz-probe spectroscopy. The conductivity in graphene at Terahertz frequencies depends on the carrier concentration as well as the carrier distribution in energy. Time-resolved studies of the conductivity can therefore be used to probe the dynamics a…
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The ultrafast relaxation and recombination dynamics of photogenerated electrons and holes in epitaxial graphene are studied using optical-pump Terahertz-probe spectroscopy. The conductivity in graphene at Terahertz frequencies depends on the carrier concentration as well as the carrier distribution in energy. Time-resolved studies of the conductivity can therefore be used to probe the dynamics associated with carrier intraband relaxation and interband recombination. We report the electron-hole recombination times in epitaxial graphene for the first time. Our results show that carrier cooling occurs on sub-picosecond time scales and that interband recombination times are carrier density dependent.
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Submitted 22 July, 2008; v1 submitted 30 May, 2008;
originally announced May 2008.
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Measurement of the Optical Absorption Spectra of Epitaxial Graphene from Terahertz to Visible
Authors:
Jahan M. Dawlaty,
Shriram Shivaraman,
Jared Strait,
Paul George,
Mvs Chandrashekhar,
Farhan Rana,
Michael G. Spencer,
Dmitry Veksler,
Yunqing Chen
Abstract:
We present experimental results on the optical absorption spectra of epitaxial graphene from the visible to the terahertz (THz) frequency range. In the THz range, the absorption is dominated by intraband processes with a frequency dependence similar to the Drude model. In the near IR range, the absorption is due to interband processes and the measured optical conductivity is close to the theoret…
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We present experimental results on the optical absorption spectra of epitaxial graphene from the visible to the terahertz (THz) frequency range. In the THz range, the absorption is dominated by intraband processes with a frequency dependence similar to the Drude model. In the near IR range, the absorption is due to interband processes and the measured optical conductivity is close to the theoretical value of $e^{2}/4\hbar$. We extract values for the carrier densities, the number of carbon atom layers, and the intraband scattering times from the measurements.
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Submitted 16 August, 2008; v1 submitted 22 January, 2008;
originally announced January 2008.
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Measurement of Ultrafast Carrier Dynamics in Epitaxial Graphene
Authors:
Jahan M. Dawlaty,
Shriram Shivaraman,
Mvs Chandrashekhar,
Farhan Rana,
Michael G. Spencer
Abstract:
Using ultrafast optical pump-probe spectroscopy, we have measured carrier relaxation times in epitaxial graphene layers grown on SiC wafers. We find two distinct time scales associated with the relaxation of nonequilibrium photogenerated carriers. An initial fast relaxation transient in the 70-120 fs range is followed by a slower relaxation process in the 0.4-1.7 ps range. The slower relaxation…
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Using ultrafast optical pump-probe spectroscopy, we have measured carrier relaxation times in epitaxial graphene layers grown on SiC wafers. We find two distinct time scales associated with the relaxation of nonequilibrium photogenerated carriers. An initial fast relaxation transient in the 70-120 fs range is followed by a slower relaxation process in the 0.4-1.7 ps range. The slower relaxation time is found to be inversely proportional to the degree of crystalline disorder in the graphene layers as measured by Raman spectroscopy. We relate the measured fast and slow time constants to carrier-carrier and carrier-phonon intraband and interband scattering processes in graphene.
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Submitted 2 December, 2007;
originally announced December 2007.
