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Coherent tunneling in an AlGaN/AlN/GaN heterojunction captured through an analogy with a MOS contact
Authors:
Yannick Baines,
Julien Buckley,
Jérôme Biscarrat,
Gennie Garnier,
Matthew Charles,
William Vandendaele,
Charlotte Gillot,
Marc Plissonnier
Abstract:
Due to their wide band gaps, III-N materials can exhibit behaviors ranging from the semiconductor class to the dielectric class. Through an analogy between a Metal/AlGaN/AlN/GaN diode and a MOS contact, we make use of this dual nature and show a direct path to capture the energy band diagram of the nitride system. We then apply transparency calculations to describe the forward conduction regime of…
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Due to their wide band gaps, III-N materials can exhibit behaviors ranging from the semiconductor class to the dielectric class. Through an analogy between a Metal/AlGaN/AlN/GaN diode and a MOS contact, we make use of this dual nature and show a direct path to capture the energy band diagram of the nitride system. We then apply transparency calculations to describe the forward conduction regime of a III-N heterojunction diode and demonstrate it realizes a tunnel diode, in contrast to its regular Schottky Barrier Diode designation. Thermionic emission is ruled out and instead, a coherent electron tunneling scenario allows to account for transport at room temperature and higher.
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Submitted 9 May, 2017; v1 submitted 27 April, 2017;
originally announced April 2017.
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Fourier analysis of the IR response of van der Waals materials
Authors:
Anjan A. Reijnders,
L. J. Sandilands,
G. Pohl,
K. W. Plumb,
Young-June Kim,
S. Jia,
M. E. Charles,
R. J. Cava,
K. S. Burch
Abstract:
In this letter, we report on an analytical technique for optical investigations of semitransparent samples. By Fourier transforming optical spectra with Fabry-Perot resonances we extract information about sample thickness and its discrete variations. Moreover, this information is used to recover optical spectra devoid of Fabry-Perot fringes, which simplifies optical modelling, and can reveal previ…
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In this letter, we report on an analytical technique for optical investigations of semitransparent samples. By Fourier transforming optical spectra with Fabry-Perot resonances we extract information about sample thickness and its discrete variations. Moreover, this information is used to recover optical spectra devoid of Fabry-Perot fringes, which simplifies optical modelling, and can reveal previously concealed spectral features. To illustrate its use, we apply our technique to a Si wafer as well as six different cleavable layered materials, including topological insulators, thermoelectrics, and magnetic insulators. In the layered materials, we find strong evidence of large step edges and thickness inhomogeneity, and cannot conclusively exclude the presence of voids in the bulk of cleaved samples. This could strongly affect the interpretation of transport and optical data of crystals with topologically protected surfaces states.
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Submitted 24 July, 2014;
originally announced July 2014.
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Optical evidence of surface state suppression in Bi based topological insulators
Authors:
Anjan A. Reijnders,
Y. Tian,
L. J. Sandilands,
G. Pohl,
I. D. Kivlichan,
S. Y. Frank Zhao,
S. Jia,
M. E. Charles,
R. J. Cava,
Nasser Alidoust,
Suyang Xu,
Madhab Neupane,
M. Zahid Hasan,
X. Wang,
S. W. Cheong,
K. S. Burch
Abstract:
A key challenge in condensed matter research is the optimization of topological insulator (TI) compounds for the study and future application of their unique surface states. Truly insulating bulk states would allow the exploitation of predicted surface state properties, such as protection from backscattering, dissipationless spin-polarized currents, and the emergence of novel particles. Towards th…
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A key challenge in condensed matter research is the optimization of topological insulator (TI) compounds for the study and future application of their unique surface states. Truly insulating bulk states would allow the exploitation of predicted surface state properties, such as protection from backscattering, dissipationless spin-polarized currents, and the emergence of novel particles. Towards this end, major progress was recently made with the introduction of highly resistive Bi$_2$Te$_2$Se, in which surface state conductance and quantum oscillations are observed at low temperatures. Nevertheless, an unresolved and pivotal question remains: while room temperature ARPES studies reveal clear evidence of TI surface states, their observation in transport experiments is limited to low temperatures. A better understanding of this surface state suppression at elevated temperatures is of fundamental interest, and crucial for pushing the boundary of device applications towards room-temperature operation. In this work, we simultaneously measure TI bulk and surface states via temperature dependent optical spectroscopy, in conjunction with transport and ARPES measurements. We find evidence of coherent surface state transport at low temperatures, and propose that phonon mediated coupling between bulk and surface states suppresses surface conductance as temperature rises.
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Submitted 2 April, 2014;
originally announced April 2014.
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Bi2Te1.6S1.4 - a Topological Insulator in the Tetradymite Family
Authors:
Huiwen Ji,
J. M. Allred,
M. K. Fuccillo,
M. E. Charles,
M. Neupane,
L. A. Wray,
M. Z. Hasan,
R. J. Cava
Abstract:
We describe the crystal growth, crystal structure, and basic electrical properties of Bi2Te1.6S1.4, which incorporates both S and Te in its Tetradymite quintuple layers in the motif -[Te0.8S0.2]-Bi-S-Bi-[Te0.8S0.2]-. This material differs from other Tetradymites studied as topological insulators due to the increased ionic character that arises from its significant S content. Bi2Te1.6S1.4 forms hig…
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We describe the crystal growth, crystal structure, and basic electrical properties of Bi2Te1.6S1.4, which incorporates both S and Te in its Tetradymite quintuple layers in the motif -[Te0.8S0.2]-Bi-S-Bi-[Te0.8S0.2]-. This material differs from other Tetradymites studied as topological insulators due to the increased ionic character that arises from its significant S content. Bi2Te1.6S1.4 forms high quality crystals from the melt and is the S-rich limit of the ternary Bi-Te-S γ-Tetradymite phase at the melting point. The native material is n-type with a low resistivity; Sb substitution, with adjustment of the Te to S ratio, results in a crossover to p-type and resistive behavior at low temperatures. Angle resolved photoemission study shows that topological surface states are present, with the Dirac point more exposed than it is in Bi2Te3 and similar to that seen in Bi2Te2Se. Single crystal structure determination indicates that the S in the outer chalcogen layers is closer to the Bi than the Te, and therefore that the layers supporting the surface states are corrugated on the atomic scale.
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Submitted 13 May, 2012;
originally announced May 2012.
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Low carrier concentration crystals of the topological insulator Bi$_2$Te$_2$Se
Authors:
Shuang Jia,
Huiwen Ji,
E. Climent-Pascual,
M. K. Fuccillo,
M. E. Charles,
Jun Xiong,
N. P. Ong,
R. J. Cava
Abstract:
We report the characterization of Bi$_2$Te$_2$Se crystals obtained by the modified Bridgman and Bridgman-Stockbarger crystal growth techniques. X-ray diffraction study confirms an ordered Se-Te distribution in the inner and outer chalcogen layers, respectively, with a small amount of mixing. The crystals displaying high resistivity ($> 1 \mathrm{Ωcm}$) and low carrier concentration (…
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We report the characterization of Bi$_2$Te$_2$Se crystals obtained by the modified Bridgman and Bridgman-Stockbarger crystal growth techniques. X-ray diffraction study confirms an ordered Se-Te distribution in the inner and outer chalcogen layers, respectively, with a small amount of mixing. The crystals displaying high resistivity ($> 1 \mathrm{Ωcm}$) and low carrier concentration ($\sim 5\times 10^{16}$/cm$^3$) at 4 K were found in the central region of the long Bridgman-Stockbarger crystal, which we attribute to very small differences in defect density along the length of the crystal rod. Analysis of the temperature dependent resistivities and Hall coefficients reveals the possible underlying origins of the donors and acceptors in this phase.
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Submitted 7 December, 2011;
originally announced December 2011.
