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Observation of unconventional van der Waals multiferroics near room temperature
Authors:
Yangliu Wu,
Haipeng Lu,
Xiaocang Han,
Chendi Yang,
Nanshu Liu,
Xiaoxu Zhao,
Liang Qiao,
Wei Ji,
Renchao Che,
Longjiang Deng,
Bo Peng
Abstract:
The search for two-dimensional (2D) van der Waals (vdW) multiferroics is an exciting yet challenging endeavor. Room-temperature 2D vdW few-layer multiferroic is a much bigger insurmountable obstacle. Here we report the discovery of an unconventional 2D vdW multiferroic with out-of-plane ferroelectric polarization and long-range magnetic orders in trilayer NiI2 device from 10 K to 295 K. The evolut…
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The search for two-dimensional (2D) van der Waals (vdW) multiferroics is an exciting yet challenging endeavor. Room-temperature 2D vdW few-layer multiferroic is a much bigger insurmountable obstacle. Here we report the discovery of an unconventional 2D vdW multiferroic with out-of-plane ferroelectric polarization and long-range magnetic orders in trilayer NiI2 device from 10 K to 295 K. The evolutions of magnetic domains with magnetic field, and the evolutions between ferroelectric and antiferroelectric phase have been unambiguously observed. More significantly, we realize a robust mutual control of magnetism and ferroelectricity at room temperature. The magnetic domains are manipulated by a small voltage ranging from 1 V to 6 V at 0 T and 295 K. This work opens opportunities for exploring multiferroic physics at the limit of few atomic layers.
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Submitted 23 February, 2024; v1 submitted 24 November, 2023;
originally announced November 2023.
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Antisymmetric Planar Hall Effect in Rutile Oxide Films Induced by the Lorentz Force
Authors:
Yongwei Cui,
Zhaoqing Li,
Haoran Chen,
Yue Chen,
Yunzhuo Wu,
Ke Pei,
Tong Wu,
Nian Xie,
Renchao Che,
Xuepeng Qiu,
Yi Liu,
Zhe Yuan,
Yizheng Wu
Abstract:
The conventional Hall effect is linearly proportional to the field component or magnetization component perpendicular to a film. Despite the increasing theoretical proposals on the Hall effect to the in-plane field or magnetization in various special systems induced by the Berry curvature, such an unconventional Hall effect has only been experimentally reported in Weyl semimetals and in a heterodi…
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The conventional Hall effect is linearly proportional to the field component or magnetization component perpendicular to a film. Despite the increasing theoretical proposals on the Hall effect to the in-plane field or magnetization in various special systems induced by the Berry curvature, such an unconventional Hall effect has only been experimentally reported in Weyl semimetals and in a heterodimensional superlattice. Here, we report an unambiguous experimental observation of the antisymmetric planar Hall effect (APHE) with respect to the in-plane magnetic field in centrosymmetric rutile RuO2 and IrO2 single-crystal films. The measured Hall resistivity is found to be linearly proportional to the component of the applied in-plane magnetic field along a particular crystal axis and to be independent of the current direction or temperature. Both the experimental observations and theoretical calculations confirm that the APHE in rutile oxide films is induced by the Lorentz force. Our findings can be generalized to ferromagnetic materials for the discovery of anomalous Hall effects and quantum anomalous Hall effects induced by in-plane magnetization. In addition to significantly expanding knowledge of the Hall effect, this work opens the door to explore new members in the Hall effect family.
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Submitted 2 June, 2024; v1 submitted 12 August, 2023;
originally announced August 2023.
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Room Temperature Gate Tunable Non Reciprocal Charge Transport in Lattice Matched InSb/CdTe Heterostructures
Authors:
Lun Li,
Yuyang Wu,
Xiaoyang Liu,
Hanzhi Ruan,
Zhenghang Zhi,
Jiuming Liu,
Yong Zhang,
Puyang Huang,
Yuchen Ji,
Chenjia Tang,
Yumeng Yang,
Renchao Che,
Xufeng Kou
Abstract:
The manipulation of symmetry provides an effective way to tailor the physical orders in solid-state systems. With the breaking of both the inversion and time-reversal symmetries, non-reciprocal magneto-transport may emerge in assorted non-magnetic systems to enrich spintronic physics. Here, we report the observation of the uni-directional magneto-resistance (UMR) in the lattice-matched InSb/CdTe f…
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The manipulation of symmetry provides an effective way to tailor the physical orders in solid-state systems. With the breaking of both the inversion and time-reversal symmetries, non-reciprocal magneto-transport may emerge in assorted non-magnetic systems to enrich spintronic physics. Here, we report the observation of the uni-directional magneto-resistance (UMR) in the lattice-matched InSb/CdTe film up to room temperature. Benefiting from the strong built-in electric field of $0.13 \mathrm{~V} \cdot \mathrm{nm}^{-1}$ in the hetero-junction region, the resulting Rashba-type spin-orbit coupling and quantum confinement warrant stable angular-dependent second-order charge current with the non-reciprocal coefficient 1-2 orders of magnitude larger than most non-centrosymmetric materials at 298 K. More importantly, this heterostructure configuration enables highly-efficient gate tuning of the rectification response in which the enhancement of the UMR amplitude by 40% is realized. Our results advocate the narrow-gap semiconductor-based hybrid system with the robust two-dimensional interfacial spin texture as a suitable platform for the pursuit of controllable chiral spin-orbit devices and applications.
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Submitted 1 April, 2022; v1 submitted 31 March, 2022;
originally announced March 2022.
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Deterministic generation of skyrmions and antiskyrmions by electric current
Authors:
Xuebing Zhao,
Jin Tang,
Ke Pei,
Weiwei Wang,
Shi-Zeng Lin,
Haifeng Du,
Mingliang Tian,
Renchao Che
Abstract:
Magnetic skyrmions are nanoscale spin whirlpools that promise breakthroughs in future spintronic applications. Controlled generation of magnetic skyrmions by electric current is crucial for this purpose. While previous studies have demonstrated this operation, the topological charge of the generated skyrmions is determined by the direction of the external magnetic fields, thus is fixed. Here, we r…
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Magnetic skyrmions are nanoscale spin whirlpools that promise breakthroughs in future spintronic applications. Controlled generation of magnetic skyrmions by electric current is crucial for this purpose. While previous studies have demonstrated this operation, the topological charge of the generated skyrmions is determined by the direction of the external magnetic fields, thus is fixed. Here, we report the current-induced skyrmions creation in a chiral magnet FeGe nanostructure by using the \emph{in-situ} Lorentz transmission electron microscopy. We show that magnetic skyrmions or antiskyrmions can be both transferred from the magnetic helical ground state simply by controlling the direction of the current flow at zero magnetic field. The force analysis and symmetry consideration, backed up by micromagnetic simulations, well explain the experimental results, where magnetic skyrmions or antiskyrmions are created due to the edge instability of the helical state in the presence of spin transfer torque. The on-demand generation of skyrmions and control of their topology by electric current without the need of magnetic field will enable novel purely electric-controlled skyrmion devices.
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Submitted 10 October, 2021;
originally announced October 2021.
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Interaction of Individual Skyrmions in Nanostructured Cubic Chiral Magnet
Authors:
H. Du,
X. Zhao,
F. N. Rybakov,
A. B. Borisov,
S. Wang,
J. Tang,
C. Jin,
C. Wang,
W. Wei,
N. S. Kiselev,
Y. Zhang,
R. Che,
S. Blügel,
M. Tian
Abstract:
We report the direct evidence of field-dependent character of the interaction between individual magnetic skyrmions as well as between skyrmions and edges in B20-type FeGe nanostripes observed by means of high resolution Lorentz transmission electron microscopy. It is shown that above certain critical values of external magnetic field the character of such long-range skyrmion interactions change f…
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We report the direct evidence of field-dependent character of the interaction between individual magnetic skyrmions as well as between skyrmions and edges in B20-type FeGe nanostripes observed by means of high resolution Lorentz transmission electron microscopy. It is shown that above certain critical values of external magnetic field the character of such long-range skyrmion interactions change from attraction to repulsion. Experimentally measured equilibrium inter-skyrmion and skrymion-edge distances as function of applied magnetic field shows quantitative agreement with the results of micromagnetic simulations. Important role of demagnetizing fields and internal symmetry of three-dimensional magnetic skyrmions are discussed in details.
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Submitted 6 April, 2018;
originally announced April 2018.
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A novel method to evaluate spin diffusion length of Pt
Authors:
Y. Q. Zhang,
N. Y. Sun,
W. R. Che,
R. Shan,
Z. G. Zhu
Abstract:
Spin diffusion length of Pt is evaluated via proximity effect of spin orbit coupling (SOC) and anomalous Hall effect (AHE) in Pt/Co2FeAl bilayers. By varying the thicknesses of Pt and Co2FeAl layer, the thickness dependences of AHE parameters can be obtained, which are theoretically predicted to be proportional to the square of the SOC strength. According to the physical image of the SOC proximity…
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Spin diffusion length of Pt is evaluated via proximity effect of spin orbit coupling (SOC) and anomalous Hall effect (AHE) in Pt/Co2FeAl bilayers. By varying the thicknesses of Pt and Co2FeAl layer, the thickness dependences of AHE parameters can be obtained, which are theoretically predicted to be proportional to the square of the SOC strength. According to the physical image of the SOC proximity effect, the spin diffusion length of Pt can easily be identified from these thickness dependences. This work provides a novel method to evaluate spin diffusion length in a material with a small value.
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Submitted 6 January, 2016;
originally announced January 2016.
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Edge-Mediated Skyrmion Chain and Its Collective Dynamics in a Confined Geometry
Authors:
Haifeng Du,
Renchao Che,
Lingyao Kong,
Xuebing Zhao,
Chiming Jin,
Chao Wang,
Jiyong Yang,
Wei Ning,
Runwei Li Changqing jin,
Xianhui Chen,
Jiadong Zang,
Yuheng Zhang,
Mingliang Tian
Abstract:
The emergence of a topologically nontrivial vortex-like magnetic structure, the magnetic skyrmion, has launched new concepts for memory devices. There, extensive studies have theoretically demonstrated the ability to encode information bits by using a chain of skyrmions in one-dimensional nanostripes. Here, we report the first experimental observation of the skyrmion chain in FeGe nanostripes by u…
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The emergence of a topologically nontrivial vortex-like magnetic structure, the magnetic skyrmion, has launched new concepts for memory devices. There, extensive studies have theoretically demonstrated the ability to encode information bits by using a chain of skyrmions in one-dimensional nanostripes. Here, we report the first experimental observation of the skyrmion chain in FeGe nanostripes by using high resolution Lorentz transmission electron microscopy. Under an applied field normal to the nanostripes plane, we observe that the helical ground states with distorted edge spins would evolves into individual skyrmions, which assemble in the form of chain at low field and move collectively into the center of nanostripes at elevated field. Such skyrmion chain survives even as the width of nanostripe is much larger than the single skyrmion size. These discovery demonstrates new way of skyrmion formation through the edge effect, and might, in the long term, shed light on the applications.
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Submitted 18 October, 2015; v1 submitted 19 May, 2015;
originally announced May 2015.
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Electrical Probing of Field-Driven Cascading Quantized Transitions of Skyrmion Cluster States in MnSi Nanowires
Authors:
Haifeng Du,
Dong Liang,
Chiming Jin,
Lingyao Kong,
Matthew J. Stolt,
Wei Ning,
Jiyong Yang,
Ying Xing,
Jian Wang,
Renchao Che,
Jiadong Zang,
Song Jin,
Yuheng Zhang,
Mingliang Tian
Abstract:
Magnetic skyrmions are topologically stable whirlpool-like spin textures that offer great promise as information carriers for future ultra-dense memory and logic devices1-4. To enable such applications, particular attention has been focused on the skyrmions properties in highly confined geometry such as one dimensional nanowires5-8. Hitherto it is still experimentally unclear what happens when the…
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Magnetic skyrmions are topologically stable whirlpool-like spin textures that offer great promise as information carriers for future ultra-dense memory and logic devices1-4. To enable such applications, particular attention has been focused on the skyrmions properties in highly confined geometry such as one dimensional nanowires5-8. Hitherto it is still experimentally unclear what happens when the width of the nanowire is comparable to that of a single skyrmion. Here we report the experimental demonstration of such scheme, where magnetic field-driven skyrmion cluster (SC) states with small numbers of skyrmions were demonstrated to exist on the cross-sections of ultra-narrow single-crystal MnSi nanowires (NWs) with diameters, comparable to the skyrmion lattice constant (18 nm). In contrast to the skyrmion lattice in bulk MnSi samples, the skyrmion clusters lead to anomalous magnetoresistance (MR) behavior measured under magnetic field parallel to the NW long axis, where quantized jumps in MR are observed and directly associated with the change of the skyrmion number in the cluster, which is supported by Monte Carlo simulations. These jumps show the key difference between the clustering and crystalline states of skyrmions, and lay a solid foundation to realize skyrmion-based memory devices that the number of skyrmions can be counted via conventional electrical measurements.
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Submitted 19 April, 2015;
originally announced April 2015.
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Gate-tunable quantum oscillations in ambipolar Cd3As2 thin films
Authors:
Yanwen Liu,
Cheng Zhang,
Xiang Yuan,
Tang Lei,
Chao Wang,
Domenico Di Sante,
Awadhesh Narayan,
Liang He,
Silvia Picozzi,
Stefano Sanvito,
Renchao Che,
Faxian Xiu
Abstract:
Electrostatic doping in materials can lead to various exciting electronic properties, such as metal-insulator transition and superconductivity, by altering the Fermi level position or introducing exotic phases. Cd3As2, a three-dimensional (3D) analog of graphene with extraordinary carrier mobility, was predicted to be a 3D Dirac semimetal, a feature confirmed by recent experiments. However, most r…
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Electrostatic doping in materials can lead to various exciting electronic properties, such as metal-insulator transition and superconductivity, by altering the Fermi level position or introducing exotic phases. Cd3As2, a three-dimensional (3D) analog of graphene with extraordinary carrier mobility, was predicted to be a 3D Dirac semimetal, a feature confirmed by recent experiments. However, most research so far has been focused on metallic bulk materials that are known to possess ultra-high mobility and giant magnetoresistance but limited carrier transport tunability. Here, we report on the first observation of a gate-induced transition from band conduction to hopping conduction in single-crystalline Cd3As2 thin films via electrostatic doping by solid electrolyte gating. The extreme charge doping enables the unexpected observation of p-type conductivity in a 50 nm-thick Cd3As2 thin film grown by molecular beam epitaxy. More importantly, the gate-tunable Shubnikov-de Haas (SdH) oscillations and the temperature-dependent resistance reveal a unique band structure and bandgap opening when the dimensionality of Cd3As2 is reduced. This is also confirmed by our first-principles calculations. The present results offer new insights towards nanoelectronic and optoelectronic applications of Dirac semimetals in general, and provide new routes in the search for the intriguing quantum spin Hall effect in low-dimension Dirac semimetals, an effect that is theoretically predicted but not yet experimentally realized.
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Submitted 29 September, 2015; v1 submitted 14 December, 2014;
originally announced December 2014.
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Electronic identification of the actual parental phase of KxFe2-ySe2 superconductor and its intrinsic mesoscopic phase separation
Authors:
F. Chen,
M. Xu,
Q. Q. Ge,
Y. Zhang,
Z. R. Ye,
L. X. Yang,
Juan Jiang,
B. P. Xie,
R. C. Che,
M. Zhang,
A. F. Wang,
X. H. Chen,
D. W. Shen,
X. M. Xie,
M. H. Jiang,
J. P. Hu,
D. L. Feng
Abstract:
While the parent compounds of the cuprate high temperature superconductors (high-Tc's) are Mott insulators, the iron-pnictide high-Tc's are in the vicinity of a metallic spin density wave (SDW) state, which highlights the difference between these two families. However, insulating parent compounds were identified for the newly discovered KxFe2-ySe2. This raises an intriguing question as to whether…
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While the parent compounds of the cuprate high temperature superconductors (high-Tc's) are Mott insulators, the iron-pnictide high-Tc's are in the vicinity of a metallic spin density wave (SDW) state, which highlights the difference between these two families. However, insulating parent compounds were identified for the newly discovered KxFe2-ySe2. This raises an intriguing question as to whether the iron-based high-Tc's could be viewed as doped Mott insulators like the cuprates. Here we report angle-resolved photoemission spectroscopy (ARPES) evidence of two insulating and one semiconducting phases of KxFe2-ySe2, and the mesoscopic phase separation between the superconducting/semiconducting phase and the insulating phases. The insulating phases are characterized by the depletion of electronic states over a 0.5 eV window below the chemical potential, giving a compelling evidence for the presence of Mott-like physics. The charging effects and the absence of band folding in the superconducting/semiconducting phase further prove that the static magnetic and vacancy orders are not related to the superconductivity. Instead, the electronic structure of the superconducting phase is much closer to the semiconducting phase, indicating the superconductivity is likely developed by doping the semiconducting phase rather than the insulating phases.
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Submitted 15 June, 2011;
originally announced June 2011.
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Structural properties, defects and structural phase transition in the ROFeM (R=La, Nd; M=As, P) materials
Authors:
C. Ma,
L. J. Zeng,
H. X. Yang,
H. L Shi,
R. C. Che,
C. Y. Liang,
Y. B. Qin,
G. F. Chen,
Z. A. Ren,
J. Q. Li
Abstract:
The structural properties of the ROFeM (R=La, Nd; M=As, P) materials have been analyzed by means of electron diffraction, high-resolution transmission-electron microscopy (TEM) and in-situ cooling TEM observations. The experimental results demonstrate that the layered ROFeM crystals often contain a variety of structural defects, such as stacking faults and small-angle boundaries. The in-situ TEM…
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The structural properties of the ROFeM (R=La, Nd; M=As, P) materials have been analyzed by means of electron diffraction, high-resolution transmission-electron microscopy (TEM) and in-situ cooling TEM observations. The experimental results demonstrate that the layered ROFeM crystals often contain a variety of structural defects, such as stacking faults and small-angle boundaries. The in-situ TEM investigations reveal that, in association with the remarkable spin-density-wave (SDW) instability near 150 K, complex structural transitions can be clearly observed in both crystal symmetry and local microstructure features.
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Submitted 19 June, 2008;
originally announced June 2008.
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Electron energy-loss spectroscopy and ab initio electronic structure of the LaOFeP superconductor
Authors:
Renchao Che,
Ruijuan Xiao,
Chongyun Liang,
Huaixin Yang,
Chao Ma,
Honglong Shi,
Jianqi Li
Abstract:
The electronic band structures of the LaOFeP superconductor have been calculated theoretically by the first principles method and measured experimentally by electron energy loss spectroscopy. The calculations indicate that the Fe atom in LaOFeP crystal shows a weak magnetic moment and does not form a long-range magnetic ordering. Band structure, Fermi surfaces and fluorine-doping effects are als…
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The electronic band structures of the LaOFeP superconductor have been calculated theoretically by the first principles method and measured experimentally by electron energy loss spectroscopy. The calculations indicate that the Fe atom in LaOFeP crystal shows a weak magnetic moment and does not form a long-range magnetic ordering. Band structure, Fermi surfaces and fluorine-doping effects are also analyzed based on the data of the density functional theory. The fine structures of the EELS data have been carefully examined in both the low loss energy region and the core losses region (O K, Fe L2,3, and La M4,5). A slight bump edge at 44 eV shows notable orientation-dependence: it can be observed in the low loss EELS spectra with q parallel to c, but becomes almost invisible in the q vertical to c spectra. Annealing experiments indicate that low oxygen pressure favors the appearance of superconductivity in LaOFeP, this fact is also confirmed by the changes of Fe L2,3 and O K excitation edges in the experimental EELS data.
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Submitted 4 May, 2008;
originally announced May 2008.
