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Visualization of Mesoscopic Conductivity Fluctuations in Amorphous Semiconductor Thin-Film Transistors
Authors:
Jia Yu,
Yuchen Zhou,
Xiao Wang,
Ananth Dodabalapur,
Keji Lai
Abstract:
Charge transport in amorphous semiconductors is considerably more complicated than process in crystalline materials due to abundant localized states. In addition to device-scale characterization, spatially resolved measurements are important to unveil electronic properties. Here, we report gigahertz conductivity mapping in amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors by micro…
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Charge transport in amorphous semiconductors is considerably more complicated than process in crystalline materials due to abundant localized states. In addition to device-scale characterization, spatially resolved measurements are important to unveil electronic properties. Here, we report gigahertz conductivity mapping in amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors by microwave impedance microscopy (MIM), which probes conductivity without Schottky barrier's influence. The difference between dc and microwave conductivities reflects the efficacy of the injection barrier in an accumulation-mode transistor. The conductivity exhibits significant nanoscale inhomogeneity in the subthreshold regime, presumably due to trapping and releasing from localized states. The characteristic length scale of local fluctuations, as determined by autocorrelation analysis, is about 200 nm. Using random-barrier model, we can simulate the spatial variation of potential landscape, which underlies the mesoscopic conductivity distribution. Our work provides an intuitive way to understand the charge transport mechanism in amorphous semiconductors at microscopic level.
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Submitted 15 December, 2023;
originally announced December 2023.
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Device Chemistry of Graphene Transistors
Authors:
B. C. Worley,
S. Kim,
T. J. Ha,
S. Park,
R. Haws,
P. Rossky,
D. Akinwande,
A. Dodabalapur
Abstract:
Graphene is an attractive material for microelectronics applications, given such favourable electrical characteristics as high mobility, high operating frequency, and good stability. If graphene is to be implemented in electronic devices on a mass scale, then it must be compatible with existing semiconductor industry fabrication processes. Unfortunately, such processing introduces defects and impu…
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Graphene is an attractive material for microelectronics applications, given such favourable electrical characteristics as high mobility, high operating frequency, and good stability. If graphene is to be implemented in electronic devices on a mass scale, then it must be compatible with existing semiconductor industry fabrication processes. Unfortunately, such processing introduces defects and impurities to the graphene, which cause scattering of the charge carriers and changes in doping level. Scattering results in degradation of electrical performance, including lower mobility and Dirac point shifts. In this paper, we review methods by which to mitigate the effects of charged impurities and defects in graphene devices. Using capping layers such as fluoropolymers, statistically significant improvement of mobility, on/off ratio, and Dirac point voltage for graphene FETs have been demonstrated. These effects are also reversible and can be attributed to the presence of highly polar groups in these capping layers such as carbon-fluoride bonds in the fluoropolymer acting to electrostatically screen charged impurities and defects in or near the graphene. In other experiments, graphene FETs were exposed to vapour-phase, polar, organic molecules in an ambient environment. This resulted in significant improvement to electrical characteristics, and the magnitude of improvement to the Dirac point scaled with the dipole moment of the delivered molecule type. The potential profile produced in the plane of the graphene sheet by the impurities was calculated to be significantly reduced by the presence of polar molecules. We present strong evidence that the polar nature of capping layers or polar vapour molecules introduced to the surface of a graphene FET act to mitigate detrimental effects of charged impurities/defects.
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Submitted 13 June, 2019;
originally announced June 2019.
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Toward Air-Stable Multilayer Phosphorene Thin-Films and Transistors
Authors:
Joon-Seok Kim,
Yingnan Liu,
Weinan Zhu,
Seohee Kim,
Di Wu,
Li Tao,
Ananth Dodabalapur,
Keji Lai,
Deji Akinwande
Abstract:
Few-layer black phosphorus (BP), also known as phosphorene, is poised to be the most attractive graphene analogue owing to its high mobility approaching that of graphene, and its thickness- tunable band gap that can be as large as that of molybdenum disulfide. In essence, phosphorene represents the much sought after high-mobility, large direct band gap two-dimensional layered crystal that is ideal…
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Few-layer black phosphorus (BP), also known as phosphorene, is poised to be the most attractive graphene analogue owing to its high mobility approaching that of graphene, and its thickness- tunable band gap that can be as large as that of molybdenum disulfide. In essence, phosphorene represents the much sought after high-mobility, large direct band gap two-dimensional layered crystal that is ideal for optoelectronics and flexible devices. However, its instability in air is of paramount concern for practical applications. Here, we demonstrate air-stable BP devices with dielectric and hydrophobic encapsulation. Microscopy, spectroscopy, and transport techniques were employed to elucidate the aging mechanism, which can initiate from the BP surface for bare samples, or edges for samples with thin dielectric coating highlighting the ineffectiveness of conventional scaled dielectrics. Our pioneering months-long studies indicate that a double layer of Al2O3 and hydrophobic fluoropolymer affords BP devices and transistors with indefinite air-stability for the first time, overcoming a critical material challenge for applied research and development.
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Submitted 1 December, 2014;
originally announced December 2014.
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Measurements of Gated Conjugated Polymer with Electrode Spacing Down to Several Nanometers
Authors:
David Abusch-Magder,
Takao Someya,
James Wang,
Edward Laskowski,
Ananth Dodabalapur,
Zhenan Bao,
D. M. Tennant
Abstract:
In this letter we describe electronic measurements of a conjugated polymer of phenylenevinylene (PPV) with electrode spacings down to 20 nm; all measurements are made in a gated transistor geometry. With rectangular electrodes we find that the current is fit by an exponential in the applied electric field for spacings between 50 nm and 2um. Based on this finding we conclude that the current is n…
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In this letter we describe electronic measurements of a conjugated polymer of phenylenevinylene (PPV) with electrode spacings down to 20 nm; all measurements are made in a gated transistor geometry. With rectangular electrodes we find that the current is fit by an exponential in the applied electric field for spacings between 50 nm and 2um. Based on this finding we conclude that the current is not injection limited, and is concentrated in a very small region; we also discuss possible transport mechanisms. The calculated mobility appears exponential in the electric field rather than in the square root of field. We also show fabricated triangular electrodes with spacings down to 5 nm, and discuss measurements with spacings down to 20 nm in which a single chain of polymer may dominate the conductance.
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Submitted 15 October, 2002;
originally announced October 2002.
