Epitaxial binding and strain effects of monolayer stanene on the Al$_{2}$O$_{3}$(0001) surface
Authors:
Stephen Eltinge,
Sohrab Ismail-Beigi
Abstract:
Stanene, the two-dimensional monolayer form of tin, has been predicted to be a 2D topological insulator due to its large spin--orbit interaction. However, a clear experimental demonstration of stanene's topologically nontrivial properties has eluded observation, in part because of the difficulty of choosing a substrate on which stanene will remain topologically nontrivial. In this paper, we presen…
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Stanene, the two-dimensional monolayer form of tin, has been predicted to be a 2D topological insulator due to its large spin--orbit interaction. However, a clear experimental demonstration of stanene's topologically nontrivial properties has eluded observation, in part because of the difficulty of choosing a substrate on which stanene will remain topologically nontrivial. In this paper, we present first-principles density functional theory (DFT) calculations of epitaxial monolayer stanene grown on the (0001) surface of alumina, Al$_{2}$O$_{3}$, as well as free-standing decorated stanene under strain. By describing the energetics and nature of how monolayer stanene binds to alumina, we show a strong energetic drive for the monolayer to be coherently strained and epitaxial to the substrate. By analyzing the electronic structure of strained stanene, we find it to be a quantum spin Hall insulator on Al$_{2}$O$_{3}$. We also describe the effect of \emph{in situ} fluorine decoration on the bound stanene monolayer, including on its potential for mechanical exfoliation.
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Submitted 26 January, 2022; v1 submitted 1 September, 2020;
originally announced September 2020.
Electrostatic Coupling between Two Surfaces of a Topological Insulator Nanodevice
Authors:
Valla Fatemi,
Benjamin Hunt,
Hadar Steinberg,
Stephen L. Eltinge,
Fahad Mahmood,
Nicholas P. Butch,
Kenji Watanabe,
Takashi Taniguchi,
Nuh Gedik,
Ray Ashoori,
Pablo Jarillo-Herrero
Abstract:
We report on electronic transport measurements of dual-gated nano-devices of the low-carrier density topological insulator Bi1.5Sb0.5Te1.7Se1.3. In all devices the upper and lower surface states are independently tunable to the Dirac point by the top and bottom gate electrodes. In thin devices, electric fields are found to penetrate through the bulk, indicating finite capacitive coupling between t…
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We report on electronic transport measurements of dual-gated nano-devices of the low-carrier density topological insulator Bi1.5Sb0.5Te1.7Se1.3. In all devices the upper and lower surface states are independently tunable to the Dirac point by the top and bottom gate electrodes. In thin devices, electric fields are found to penetrate through the bulk, indicating finite capacitive coupling between the surface states. A charging model allows us to use the penetrating electric field as a measurement of the inter-surface capacitance $C_{TI}$ and the surface state energy-density relationship $μ$(n), which is found to be consistent with independent ARPES measurements. At high magnetic fields, increased field penetration through the surface states is observed, strongly suggestive of the opening of a surface state band gap due to broken time-reversal symmetry.
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Submitted 2 October, 2014;
originally announced October 2014.
