Showing 1–24 of 24 results for author: Fan, D D

Strong interlayer coupling in two-dimensional PbSe with high thermoelectric performance

Authors: Z. P. Yin, C. Y. Sheng, R. Hu, S. H. Han, D. D. Fan, G. H. Cao, H. J. Liu

Abstract: It was generally assumed that weak van der Waals interactions exist between neighboring layers in the two-dimensional group-IV chalcogenides. Using PbSe as a prototypal example, however, we find additional strong coupling between the Pb-Pb layers, as evidenced by detailed analysis of the differential charge density. The coupling resembles covalent-like bond and exhibits strong harmonicity around t… ▽ More It was generally assumed that weak van der Waals interactions exist between neighboring layers in the two-dimensional group-IV chalcogenides. Using PbSe as a prototypal example, however, we find additional strong coupling between the Pb-Pb layers, as evidenced by detailed analysis of the differential charge density. The coupling resembles covalent-like bond and exhibits strong harmonicity around the equilibrium distance, which can be fine tuned to obviously reduce the phonon thermal conductivity but slightly change the electronic transport of PbSe. As a consequence, a maximum ZT value of 2.5 can be realized at 900 K for the p-type system. Our work offers an effective and feasible design strategy to enhance the thermoelectric performance of similar layered structures. △ Less

Submitted 1 September, 2020; originally announced September 2020.

High figure-of-merit in the heavy-fermion UN2 system for radioisotope thermoelectric applications

Authors: Z. Z. Zhou, D. D. Fan, H. J. Liu, J. Liu

Abstract: The design of uranium-based thermoelectric materials presents a novel and intriguing strategy for directly converting nuclear heat into electrical power. Using high-level first-principles approach combined with accurate solution of Boltzmann transport equation, we demonstrate that a giant n-type power factor of 13.8 mW/mK^2 and a peak ZT value of 2.2 can be realized in the heavy-fermion UN2 compou… ▽ More The design of uranium-based thermoelectric materials presents a novel and intriguing strategy for directly converting nuclear heat into electrical power. Using high-level first-principles approach combined with accurate solution of Boltzmann transport equation, we demonstrate that a giant n-type power factor of 13.8 mW/mK^2 and a peak ZT value of 2.2 can be realized in the heavy-fermion UN2 compound at 700 K. Such promising thermoelectric performance arises from the large degeneracy (Nv=14) of heavy conduction band coupled with weak electron-phonon interactions, which is in principle governed by the strong Coulomb correlation among the partially filled U-5f electrons in the face-centered cubic structure. Collectively, our theoretical work suggests that the energetic UN2 is an excellent alternative to efficient radioisotope power conversion, which also uncovers an underexplored area for thermoelectric research. △ Less

Submitted 25 December, 2019; originally announced December 2019.

A comparative study of the thermoelectric performance of graphene-like BX (X= P, As, Sb) monolayers

Authors: Z. Z. Zhou, H. J. Liu, D. D. Fan, G. H. Cao

Abstract: The electronic and phonon transport properties of graphene-like boron phosphide (BP), boron arsenide (BAs), and boron antimonide (BSb) monolayers are investigated using first-principles calculations and Boltzmann theory. By considering both the phonon-phonon and electron-phonon scatterings, we demonstrate that the strong bond anharmonicity in the BAs and BSb monolayers can dramatically suppress th… ▽ More The electronic and phonon transport properties of graphene-like boron phosphide (BP), boron arsenide (BAs), and boron antimonide (BSb) monolayers are investigated using first-principles calculations and Boltzmann theory. By considering both the phonon-phonon and electron-phonon scatterings, we demonstrate that the strong bond anharmonicity in the BAs and BSb monolayers can dramatically suppress the phonon relaxation time but hardly affects that of electrons. As a consequence, both systems exhibit comparable power factors with that of the BP monolayer but much lower lattice thermal conductivities. Accordingly, a maximum ZT values above 3.0 can be achieved in both BAs and BSb monolayers at optimized carrier concentrations. Interestingly, very similar p- and n-type thermoelectric performance is observed in the BSb monolayer along the armchair direction, which is of vital importance in the fabrication of thermoelectric modules with comparable efficiencies. △ Less

Submitted 28 February, 2019; originally announced February 2019.

High thermoelectric performance in the hexagonal bilayer structure consisting of light boron and phosphorus elements

Authors: Z. Z. Zhou, H. J. Liu, D. D. Fan, G. H. Cao, C. Y. Sheng

Abstract: Two-dimensional layered materials have attracted tremendous attentions due to their extraordinary physical and chemical properties. Using first-principles calculations and Boltzmann transport theory, we give an accurate prediction of the thermoelectric properties of boron phosphide (BP) bilayer, where the carrier relaxation time is treated within the framework of electron-phonon coupling. It is fo… ▽ More Two-dimensional layered materials have attracted tremendous attentions due to their extraordinary physical and chemical properties. Using first-principles calculations and Boltzmann transport theory, we give an accurate prediction of the thermoelectric properties of boron phosphide (BP) bilayer, where the carrier relaxation time is treated within the framework of electron-phonon coupling. It is found that the lattice thermal conductivity of BP bilayer is much lower than that of its monolayer structure, which can be attributed to the presence of van der Waals interactions. On the other hand, the graphene-like BP bilayer shows very high carrier mobility with a moderate band gap of 0.88 eV. As a consequence, a maximum p-type ZT value of ~1.8 can be realized along the x-direction at 1200 K, which is amazingly high for systems consisting of light elements only. Moreover, we obtain almost identical p- and n-type ZT of ~1.6 along the y-direction, which is very desirable for fabrication of thermoelectric modules with comparative efficiencies. Collectively, these findings demonstrate great advantages of the layered structures containing earth-abundant elements for environment-friendly thermoelectric applications. △ Less

Submitted 8 November, 2018; originally announced November 2018.

Journal ref: Phys. Rev. B 99, 085410 (2019)

High thermoelectric performance originating from the grooved bands in the ZrSe3 monolayer

Authors: Z. Z. Zhou, H. J. Liu, D. D. Fan, C. Y. Sheng, G. H. Cao

Abstract: Low-dimensional layered materials have attracted tremendous attentions due to their wide range of physical and chemical properties and potential applications in electronic devices. Using first-principles method taking into account the quasiparticle self-energy correction and Boltzmann transport theory, the electronic transport properties of ZrSe3 monolayer are investigated, where the carrier relax… ▽ More Low-dimensional layered materials have attracted tremendous attentions due to their wide range of physical and chemical properties and potential applications in electronic devices. Using first-principles method taking into account the quasiparticle self-energy correction and Boltzmann transport theory, the electronic transport properties of ZrSe3 monolayer are investigated, where the carrier relaxation time is accurately calculated within the framework of electron-phonon coupling. It is demonstrated that the high power factor of the monolayer can be attributed to the grooved bands near the conduction band minimum. Combined with the low lattice thermal conductivity obtained by solving the phonon Boltzmann transport equation, a considerable n-type ZT value of ~2.4 can be achieved at 800 K in the ZrSe3 monolayer. △ Less

Submitted 15 August, 2018; v1 submitted 21 July, 2018; originally announced July 2018.

First-principles study of the thermoelectric properties of quaternary tetradymite BiSbSeTe2

Authors: Z. Z. Zhou, H. J. Liu, D. D. Fan, B. Y. Zhao, C. Y. Sheng, G. H. Cao, S. Huang

Abstract: The electronic and phonon transport properties of quaternary tetradymite BiSbSeTe2 are investigated using first-principles approach and Boltzmann transport theory. Unlike the binary counterpart Bi2Te3, we obtain a pair of Rashba splitting bands induced by the absence of inversion center. Such unique characteristic could lead to a large Seebeck coefficient even at relatively higher carrier concentr… ▽ More The electronic and phonon transport properties of quaternary tetradymite BiSbSeTe2 are investigated using first-principles approach and Boltzmann transport theory. Unlike the binary counterpart Bi2Te3, we obtain a pair of Rashba splitting bands induced by the absence of inversion center. Such unique characteristic could lead to a large Seebeck coefficient even at relatively higher carrier concentration. Besides, we find an ultralow lattice thermal conductivity of BiSbSeTe2, especially along the interlayer direction, which can be traced to the extremely small phonon relaxation time mainly induced by the mixed covalent bonds. As a consequence, a considerably large ZT value of ~2.0 can be obtained at 500 K, indicating that the unique lattice structure of BiSbSeTe2 caused by isoelectronic substitution could be an advantage to achieving high thermoelectric performance. △ Less

Submitted 8 February, 2018; originally announced February 2018.

First-principles study of the effects of electron-phonon coupling on the thermoelectric properties: a case study of SiGe compound

Authors: D. D. Fan, H. J. Liu, L. Cheng, J. H. Liang, P. H. Jiang

Abstract: It is generally assumed in the thermoelectric community that the lattice thermal conductivity of a given material is independent of the electronic properties. This perspective is however questionable since the electron-phonon coupling could have certain effects on both the carrier and phonon transport, which in turn will affect the thermoelectric properties. Using SiGe compound as a prototypical e… ▽ More It is generally assumed in the thermoelectric community that the lattice thermal conductivity of a given material is independent of the electronic properties. This perspective is however questionable since the electron-phonon coupling could have certain effects on both the carrier and phonon transport, which in turn will affect the thermoelectric properties. Using SiGe compound as a prototypical example, we give an accurate prediction of the carrier relaxation time by considering scattering from all the phonon modes, as opposed to the simple deformation potential theory. It is found that the carrier relaxation time does not change much with the concentration, which is however not the case for the phonon transport where the lattice thermal conductivity can be significantly reduced by electron-phonon coupling at higher carrier concentration. As a consequence, the figure-of-merit of SiGe compound is obviously enhanced at optimized carrier concentration, and becomes more pronounced at elevated temperature. △ Less

Submitted 30 December, 2017; originally announced January 2018.

First-principles study of the thermoelectric properties of Zintl compound KSnSb

Authors: S. Huang, H. J. Liu, D. D. Fan, P. H. Jiang, J. H. Liang, G. H. Cao, J. Shi

Abstract: The unique structure of Zintl phase makes it an ideal system to realize the concept of phonon-glass and electron-crystal in the thermoelectric community. In this work, by combining first-principles calculations and Boltzmann transport theory for both electrons and phonons, we demonstrate that the ZT value of Zintl compound KSnSb can reach ~2.6 at 800 K. Such extraordinary thermoelectric performanc… ▽ More The unique structure of Zintl phase makes it an ideal system to realize the concept of phonon-glass and electron-crystal in the thermoelectric community. In this work, by combining first-principles calculations and Boltzmann transport theory for both electrons and phonons, we demonstrate that the ZT value of Zintl compound KSnSb can reach ~2.6 at 800 K. Such extraordinary thermoelectric performance originates from the large Seebeck coefficient due to multi-valley band structures and particularly very small lattice thermal conductivity caused by mixed-bond characteristics. △ Less

Submitted 28 July, 2017; originally announced July 2017.

Effects of topological edge states on the thermoelectric properties of Bi nanoribbons

Authors: L. Cheng, H. J. Liu, J. H. Liang, J. Zhang, J. Wei, P. H. Jiang, D. D. Fan

Abstract: Using first-principles calculations combined with Boltzmann transport theory, we investigate the effects of topological edge states on the thermoelectric properties of Bi nanoribbons. It is found that there is a competition between the edge and bulk contributions to the Seebeck coefficients. However, the electronic transport of the system is dominated by the edge states because of its much larger… ▽ More Using first-principles calculations combined with Boltzmann transport theory, we investigate the effects of topological edge states on the thermoelectric properties of Bi nanoribbons. It is found that there is a competition between the edge and bulk contributions to the Seebeck coefficients. However, the electronic transport of the system is dominated by the edge states because of its much larger electrical conductivity. As a consequence, a room temperature value exceeding 3.0 could be achieved for both p- and n-type systems when the relaxation time ratio between the edge and the bulk states is tuned to be 1000. Our theoretical study suggests that the utilization of topological edge states might be a promising approach to cross the threshold of the industrial application of thermoelectricity. △ Less

Submitted 11 October, 2016; originally announced October 2016.

Understanding the electronic and phonon transport properties of thermoelectric material BiCuSeO: a first-principles study

Authors: D. D. Fan, H. J. Liu, L. Cheng, J. Zhang, P. H. Jiang, J. Wei, J. H. Liang, J. Shi

Abstract: Using first-principles pseudopotential method and Boltzmann transport theory, we give a comprehensive understanding of the electronic and phonon transport properties of thermoelectric material BiCuSeO. By choosing proper hybrid functional for the exchange-correlation energy, we find that the system is semiconducting with a direct band gap of ~0.8 eV, which is quite different from those obtained pr… ▽ More Using first-principles pseudopotential method and Boltzmann transport theory, we give a comprehensive understanding of the electronic and phonon transport properties of thermoelectric material BiCuSeO. By choosing proper hybrid functional for the exchange-correlation energy, we find that the system is semiconducting with a direct band gap of ~0.8 eV, which is quite different from those obtained previously using standard functionals. Detailed analysis of a three-dimensional energy band structure indicates that there is a valley degeneracy of eight around the valence band maximum, which leads to a sharp density of states and is responsible for a large p-type Seebeck coefficient. Moreover, we find that the density of states effective masses are much larger and results in very low hole mobility of BiCuSeO. On the other hand, we find larger atomic displacement parameters for the Cu atoms, which indicates that the stronger anharmonicity of BiCuSeO may originate from the rattling behavior of Cu instead of previously believed Bi atoms. △ Less

Submitted 18 August, 2016; originally announced August 2016.

Thermoelectric properties of graphyne from first-principles calculations

Authors: P. H. Jiang, H. J. Liu, L. Cheng, D. D. Fan, J. Zhang, J. Wei, J. H. Liang

Abstract: The two-dimensional graphene-like carbon allotrope, graphyne, has been recently fabricated and exhibits many interesting electronic properties. In this work, we investigate the thermoelectric properties of γ-graphyne by performing first-principles calculations combined with Boltzmann transport theory for both electron and phonon. The carrier relaxation time is accurately evaluated from the ultra-d… ▽ More The two-dimensional graphene-like carbon allotrope, graphyne, has been recently fabricated and exhibits many interesting electronic properties. In this work, we investigate the thermoelectric properties of γ-graphyne by performing first-principles calculations combined with Boltzmann transport theory for both electron and phonon. The carrier relaxation time is accurately evaluated from the ultra-dense electron-phonon coupling matrix elements calculated by adopting the density functional perturbation theory and Wannier interpolation, rather than the generally used deformation potential theory which only considers the electron-acoustic phonon scattering. It is found that the thermoelectric performance of γ-graphyne exhibits a strong dependence on the temperature and carrier type. At an intermediate temperature of 600 K, a maximum ZT value of 1.5 and 1.0 can be achieved for the p- and n-type systems, respectively. △ Less

Submitted 18 August, 2016; v1 submitted 5 August, 2016; originally announced August 2016.

The rhombohedral Sb2Se3 is also an intrinsic topological insulator

Authors: G. H. Cao, H. J. Liu, J. H. Liang, L. Cheng, D. D. Fan, Z. Y. Zhang

Abstract: Topological insulators are new class of quantum materials, which have insulating energy gaps in bulk, but exhibit gapless edge states or surface states that are protected by time-reversal symmetry at boundary. It was theoretically predicted and experimentally confirmed that the binary tetradymites Bi2Te3, Bi2Se3, and Sb2Te3 are three-dimensional topological insulators. In this work, we demonstrate… ▽ More Topological insulators are new class of quantum materials, which have insulating energy gaps in bulk, but exhibit gapless edge states or surface states that are protected by time-reversal symmetry at boundary. It was theoretically predicted and experimentally confirmed that the binary tetradymites Bi2Te3, Bi2Se3, and Sb2Te3 are three-dimensional topological insulators. In this work, we demonstrate by first-principles approach that the ignored Sb2Se3, although with relatively smaller spin-orbital coupling strength, can also exhibit topologically protected surface states with a bulk gap of 0.19 eV, as long as the van der Waals interaction is explicitly included in the calculations. Detailed analysis of the band structures of Sb2Se3 thin films indicates that the non-trivial surface state appears at a critical thickness of six quintuple layers. △ Less

Submitted 5 August, 2016; v1 submitted 20 July, 2016; originally announced July 2016.

Journal ref: Phys. Rev. B 97, 075147 (2018)

Molecular dynamics simulations of the lattice thermal conductivity of CuInTe2

Authors: J. Wei, H. J. Liu, L. Cheng, J. Zhang, P. H. Jiang, J. H. Liang, D. D. Fan, J. Shi

Abstract: The lattice thermal conductivity of thermoelectric material CuInTe2 is predicted using classical molecular dynamics simulations, where a simple but effective Morse-type interatomic potential is constructed by fitting first-principles total energy calculations. In a broad temperature range from 300 to 900 K, our simulated results agree well with those measured experimentally, as well as those obtai… ▽ More The lattice thermal conductivity of thermoelectric material CuInTe2 is predicted using classical molecular dynamics simulations, where a simple but effective Morse-type interatomic potential is constructed by fitting first-principles total energy calculations. In a broad temperature range from 300 to 900 K, our simulated results agree well with those measured experimentally, as well as those obtained from phonon Boltzmann transport equation. By introducing the Cd impurity and Cu vacancy, the thermal conductivity of CuInTe2 can be effectively reduced to further enhance the thermoelectric performance of this chalcopyrite compound. △ Less

Submitted 28 June, 2016; originally announced June 2016.

Predicting the optimized thermoelectric performance of MgAgSb

Authors: C. Y. Sheng, H. J. Liu, D. D. Fan, L. Cheng, J. Zhang J. Wei, J. H. Liang, P. H. Jiang, J. Shi

Abstract: Using first-principles method and Boltzmann theory, we provide an accurate prediction of the electronic band structure and thermoelectric transport properties of alpha-MgAgSb. Our calculations demonstrate that only when an appropriate exchange-correlation functional is chosen can we correctly reproduce the semiconducting nature of this compound. By fine tuning the carrier concentration, the thermo… ▽ More Using first-principles method and Boltzmann theory, we provide an accurate prediction of the electronic band structure and thermoelectric transport properties of alpha-MgAgSb. Our calculations demonstrate that only when an appropriate exchange-correlation functional is chosen can we correctly reproduce the semiconducting nature of this compound. By fine tuning the carrier concentration, the thermoelectric performance of alpha-MgAgSb can be significantly optimized, which exhibits a strong temperature dependence and gives a maximum ZT value of 1.7 at 550 K. △ Less

Submitted 9 March, 2016; originally announced March 2016.

Journal ref: Journal of Applied Physics 119, 195101 (2016)

LaPtSb: a half-Heusler compound with high thermoelectric performance

Authors: Q. Y. Xue, H. J. Liu, D. D. Fan, L. Cheng, B. Y. Zhao, J. Shi

Abstract: The electronic and transport properties of the half-Heusler compound LaPtSb are investigated by performing first-principles calculations combined with semi-classical Boltzmann theory and deformation potential theory. Compared with many typical half-Heusler compounds, the LaPtSb exhibits obviously larger power factor at room temperature, especially for the n-type system. Together with the very low… ▽ More The electronic and transport properties of the half-Heusler compound LaPtSb are investigated by performing first-principles calculations combined with semi-classical Boltzmann theory and deformation potential theory. Compared with many typical half-Heusler compounds, the LaPtSb exhibits obviously larger power factor at room temperature, especially for the n-type system. Together with the very low lattice thermal conductivity, the thermoelectric figure of merit (ZT) of LaPtSb can be optimized to a record high value of 2.2 by fine tuning the carrier concentration. △ Less

Submitted 6 June, 2016; v1 submitted 28 January, 2016; originally announced January 2016.

Journal ref: Physical Chemistry Chemical Physics, 2016

Thermal conductivities of phosphorene allotropes from first-principle calculations: a comparative study

Authors: J. Zhang, H. J. Liu, L. Cheng, J. Wei, J. H. Liang, D. D. Fan, P. H. Jiang, J. Shi

Abstract: Phosphorene has attracted tremendous interest recently due to its intriguing electronic properties. However, the thermal transport properties of phosphorene, especially for its allotropes, are still not well-understood. In this work, we calculate the thermal conductivities of five phosphorene allotropes (α-, \b{eta}-, γ-, δ- and ζ-phase) by using phonon Boltzmann transport theory combined with fir… ▽ More Phosphorene has attracted tremendous interest recently due to its intriguing electronic properties. However, the thermal transport properties of phosphorene, especially for its allotropes, are still not well-understood. In this work, we calculate the thermal conductivities of five phosphorene allotropes (α-, \b{eta}-, γ-, δ- and ζ-phase) by using phonon Boltzmann transport theory combined with first-principles calculations. It is found that the α-phosphorene exhibits considerable anisotropic thermal transport, while it is less obvious in the other four phosphorene allotropes. The highest thermal conductivity is found in the \b{eta}-phosphorene, followed by δ-, γ- and ζ-phase. The much lower thermal conductivity of the ζ-phase can be attributed to its relatively complex atomic configuration. It is expected that the rich thermal transport properties of phosphorene allotropes can have potential applications in the thermoelectrics and thermal management. △ Less

Submitted 7 April, 2016; v1 submitted 27 January, 2016; originally announced January 2016.

High thermoelectric performance of distorted Bismuth (110) layer

Authors: L. Cheng, H. J. Liu, J. Zhang, J. Wei, J. H. Liang, P. H. Jiang, D. D. Fan, L. Sun, J. Shi

Abstract: The thermoelectric properties of distorted bismuth (110) layer are investigated using first-principles calculations combined with the Boltzmann transport equation for both electrons and phonons. To accurately predict the electronic and transport properties, the quasiparticle corrections with the GW approximation of many-body effects have been explicitly included. It is found that a maximum ZT valu… ▽ More The thermoelectric properties of distorted bismuth (110) layer are investigated using first-principles calculations combined with the Boltzmann transport equation for both electrons and phonons. To accurately predict the electronic and transport properties, the quasiparticle corrections with the GW approximation of many-body effects have been explicitly included. It is found that a maximum ZT value of 6.4 can be achieved for n-type system, which is essentially stemmed from the weak scattering of electrons. Moreover, we demonstrate that the distorted Bi layer remains high ZT values at relatively broad regions of both temperature and carrier concentration. Our theoretical work emphasizes that the deformation potential constant characterizing the electron-phonon scattering strength is an important paradigm for searching high thermoelectric performance materials. △ Less

Submitted 6 June, 2016; v1 submitted 26 September, 2015; originally announced September 2015.

Comments: Physical Chemistry Chemical Physics, 2016

High thermoelectric performance can be achieved in black phosphorus

Authors: J. Zhang, H. J. Liu, L. Cheng, J. Wei, J. H. Liang, D. D. Fan, P. H. Jiang, L. Sun, J. Shi

Abstract: Few-layer black phosphorus has recently emerged as a promising candidate for novel electronic and optoelectronic device. Here we demonstrate by first-principles calculations and Boltzmann theory that, black phosphorus could also have potential thermoelectric applications and a fair ZT value of 1.1 can be achieved at elevated temperature. Moreover, such value can be further increased to 5.4 by subs… ▽ More Few-layer black phosphorus has recently emerged as a promising candidate for novel electronic and optoelectronic device. Here we demonstrate by first-principles calculations and Boltzmann theory that, black phosphorus could also have potential thermoelectric applications and a fair ZT value of 1.1 can be achieved at elevated temperature. Moreover, such value can be further increased to 5.4 by substituting P atom with Sb atom, giving nominal formula of P0.75Sb0.25. Our theoretical work suggests that high thermoelectric performance can be achieved without using complicated crystal structure or seeking for low-dimensional systems. △ Less

Submitted 27 August, 2015; originally announced August 2015.

Journal ref: Journal of Materials Chemistry C 4, 991 (2016)

Tuning the carrier concentration to improve the thermoelectric performance of CuInTe2 compound

Authors: J. Wei, H. J. Liu, L. Cheng, J. Zhang, J. H. Liang, P. H. Jiang, D. D. Fan, J. Shi

Abstract: The electronic and transport properties of CuInTe2 chalcopyrite are investigated using density functional calculations combined with Boltzmann theory. The band gap predicted from hybrid functional is 0.92 eV, which agrees well with experimental data and leads to relatively larger Seebeck coefficient compared with those of narrow-gap thermoelectric materials. By fine tuning the carrier concentratio… ▽ More The electronic and transport properties of CuInTe2 chalcopyrite are investigated using density functional calculations combined with Boltzmann theory. The band gap predicted from hybrid functional is 0.92 eV, which agrees well with experimental data and leads to relatively larger Seebeck coefficient compared with those of narrow-gap thermoelectric materials. By fine tuning the carrier concentration, the electrical conductivity and power factor of the system can be significantly optimized. Together with the inherent low thermal conductivity, the ZT values of CuInTe2 compound can be enhanced to as high as 1.72 at 850 K, which is obviously larger than those measured experimentally and suggests there is still room to improve the thermoelectric performance of this chalcopyrite compound. △ Less

Submitted 24 August, 2015; originally announced August 2015.

Journal ref: AIP Advances 5, 107230 (2015)

Enhanced thermoelectric performance of carbon nanotubes at elevated temperature

Authors: P. H. Jiang, H. J. Liu, D. D. Fan, L. Cheng, J. Wei, J. Zhang, J. H. Liang, J. Shi

Abstract: The electronic and transport properties of (10, 0) single-walled carbon nanotube are studied by performing the first-principles calculations and semi-classical Boltzmann theory. It is found that the (10, 0) tube exhibits considerably large Seebeck coefficient and electrical conductivity which is highly desirable for good thermoelectric materials. Together with the lattice thermal conductivity pred… ▽ More The electronic and transport properties of (10, 0) single-walled carbon nanotube are studied by performing the first-principles calculations and semi-classical Boltzmann theory. It is found that the (10, 0) tube exhibits considerably large Seebeck coefficient and electrical conductivity which is highly desirable for good thermoelectric materials. Together with the lattice thermal conductivity predicted by non-equilibrium molecular dynamics simulations, the room temperature ZT value of (10, 0) tube is estimated to be 0.15 for p-type carriers. Moreover, the ZT value exhibits strong temperature dependence and can be reached to 0.77 at 1000 K. Such ZT value can be further enhanced to as high as 1.7 by isotope substitution and chemisorptions of hydrogen on the tube. △ Less

Submitted 17 March, 2015; v1 submitted 5 February, 2015; originally announced February 2015.

Journal ref: Phys.Chem.Chem.Phys. 17, 27558 (2015)

Graphdiyne: a two-dimensional thermoelectric material with high figure of merit

Authors: L. Sun, P. H. Jiang, H. J. Liu, D. D. Fan, J. H. Liang, J. Wei, L. Cheng, J. Zhang, J. Shi

Abstract: As a new carbon allotrope, the recently fabricated graphdiyne has attracted much attention due to its interesting two-dimensional character. Here we demonstrate by multiscale computations that, unlike graphene, graphdiyne has a natural band gap, and simultaneously possess high electrical conductivity, large Seebeck coefficient, and low thermal conductivity. At a carrier concentration of 2.74*10^11… ▽ More As a new carbon allotrope, the recently fabricated graphdiyne has attracted much attention due to its interesting two-dimensional character. Here we demonstrate by multiscale computations that, unlike graphene, graphdiyne has a natural band gap, and simultaneously possess high electrical conductivity, large Seebeck coefficient, and low thermal conductivity. At a carrier concentration of 2.74*10^11/cm^2 for holes and 1.62*10^11/cm^2 for electrons, the room temperature ZT value of graphdiyne can be optimized to 3.0 and 4.8, respectively, which makes it an ideal system to realize the concept of "phonon-glass and electron-crystal" in the thermoelectric community. △ Less

Submitted 28 April, 2015; v1 submitted 4 February, 2015; originally announced February 2015.

Journal ref: Carbon 90, 255 (2015)

Theoretical study of the thermoelectric properties of SiGe nanotubes

Authors: J. Wei, H. J. Liu, X. J. Tan, L. Cheng, J. Zhang, D. D. Fan, J. Shi, X. F. Tang

Abstract: The thermoelectric properties of two typical SiGe nanotubes are investigated using a combination of density functional theory, Boltzmann transport theory, and molecular dynamics simulations. Unlike carbon nanotubes, these SiGe nanotubes tend to have gear-like geometry, and both the (6, 6) and (10, 0) tubes are semiconducting with direct band gaps. The calculated Seebeck coefficients as well as the… ▽ More The thermoelectric properties of two typical SiGe nanotubes are investigated using a combination of density functional theory, Boltzmann transport theory, and molecular dynamics simulations. Unlike carbon nanotubes, these SiGe nanotubes tend to have gear-like geometry, and both the (6, 6) and (10, 0) tubes are semiconducting with direct band gaps. The calculated Seebeck coefficients as well as the relaxation time of these SiGe nanotubes are significantly larger than those of bulk thermoelectric materials. Together with smaller lattice thermal conductivity caused by phonon boundary and alloy scattering, these SiGe nanotubes can exhibit very good thermoelectric performance. Moreover, there are strong chirality and temperature dependence of the ZT values, which can be optimized to 4.9 at room temperature and further enhanced to 5.4 at 400 K for the armchair (6, 6) tube. △ Less

Submitted 23 June, 2014; originally announced June 2014.

Journal ref: RSC advances 4, 53037 (2014)

MoS2 nanoribbons as promising thermoelectric materials

Authors: D. D. Fan, H. J. Liu, L. Cheng, P. H. Jiang, J. Shi, X. F. Tang

Abstract: The thermoelectric properties of MoS2 armchair nanoribbons with different width are studied by using first-principles calculations and Boltzmann transport theory, where the relaxation time is predicted from deformation potential theory. Due to the dangling bonds at the armchair edge, there is obvious structure reconstruction of the nanoribbons which plays an important role in governing the electro… ▽ More The thermoelectric properties of MoS2 armchair nanoribbons with different width are studied by using first-principles calculations and Boltzmann transport theory, where the relaxation time is predicted from deformation potential theory. Due to the dangling bonds at the armchair edge, there is obvious structure reconstruction of the nanoribbons which plays an important role in governing the electronic and transport properties. The investigated armchair nanoribbons are found to be semiconducting with indirect gaps, which exhibit interesting width-dependent oscillation behavior. The smaller gap of nanoribbon with width N = 4 leads to a much larger electrical conductivity at 300 K, which outweighs the relatively larger electronic thermal conductivity when compared with those of N = 5, 6. As a results, the room temperature ZT values can be optimized to 2.7 (p-type) and 2.0 (n-type), which significantly exceed the performance of most laboratory results reported in the literature. △ Less

Submitted 29 May, 2014; v1 submitted 22 May, 2014; originally announced May 2014.

Journal ref: Applied Physics Letters 105, 133113 (2014)

Phosphorene nanoribbon as a promising candidate for thermoelectric applications

Authors: J. Zhang, H. J. Liu, L. Cheng, J. Wei, J. H. Liang, D. D. Fan, J. Shi, X. F. Tang, Q. J. Zhang

Abstract: In this work, the electronic properties of phosphorene nanoribbons with different width and edge configurations are studied by using density functional theory. It is found that the armchair phosphorene nanoribbons are semiconducting while the zigzag nanoribbons are metallic. The band gaps of armchair nanoribbons decrease monotonically with increasing ribbon width. By passivating the edge phosphoru… ▽ More In this work, the electronic properties of phosphorene nanoribbons with different width and edge configurations are studied by using density functional theory. It is found that the armchair phosphorene nanoribbons are semiconducting while the zigzag nanoribbons are metallic. The band gaps of armchair nanoribbons decrease monotonically with increasing ribbon width. By passivating the edge phosphorus atoms with hydrogen, the zigzag series also become semiconducting, while the armchair series exhibit a larger band gap than their pristine counterpart. The electronic transport properties of these phosphorene nanoribbons are then investigated using Boltzmann theory and relaxation time approximation. We find that all the semiconducting nanoribbons exhibit very large values of Seebeck coefficient and can be further enhanced by hydrogen passivation at the edge. Taking armchair nanoribbon with width N=7 as an example, we calculate the lattice thermal conductivity with the help of phonon Boltzmann transport equation. Due to significantly enhanced Seebeck coefficient and decreased thermal conductivity, the phosphorene nanoribbon exhibit a very high figure of merit (ZT value) of 4.0 at room temperature, which suggests its appealing thermoelectric applications. △ Less

Submitted 16 June, 2014; v1 submitted 13 May, 2014; originally announced May 2014.

Journal ref: Scientific Reports 4, 6452 (2014)