Single indium atoms and few-atom indium clusters anchored onto graphene via silicon heteroatoms
Authors:
Kenan Elibol,
Clemens Mangler,
David D. O'Regan,
Kimmo Mustonen,
Dominik Eder,
Jannik C. Meyer,
Jani Kotakoski,
Richard G. Hobbs,
Toma Susi,
Bernhard C. Bayer
Abstract:
Single atoms and few-atom nanoclusters are of high interest in catalysis and plasmonics, but pathways for their fabrication and stable placement remain scarce. We report here the self-assembly of room-temperature-stable single indium (In) atoms and few-atom In clusters (2-6 atoms) that are anchored to substitutional silicon (Si) impurity atoms in suspended monolayer graphene membranes. Using atomi…
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Single atoms and few-atom nanoclusters are of high interest in catalysis and plasmonics, but pathways for their fabrication and stable placement remain scarce. We report here the self-assembly of room-temperature-stable single indium (In) atoms and few-atom In clusters (2-6 atoms) that are anchored to substitutional silicon (Si) impurity atoms in suspended monolayer graphene membranes. Using atomically resolved scanning transmission electron microscopy (STEM), we find that the exact atomic arrangements of the In atoms depend strongly on the original coordination of the Si anchors in the graphene lattice: Single In atoms and In clusters with 3-fold symmetry readily form on 3-fold coordinated Si atoms, whereas 4-fold symmetric clusters are found attached to 4-fold coordinated Si atoms. All structures are produced by our fabrication route without the requirement for electron-beam induced materials modification. In turn, when activated by electron beam irradiation in the STEM, we observe in situ the formation, restructuring and translation dynamics of the Si-anchored In structures: Hexagon-centered 4-fold symmetric In clusters can (reversibly) transform into In chains or In dimers, whereas C-centered 3-fold symmetric In clusters can move along the zig-zag direction of the graphene lattice due to the migration of Si atoms during electron-beam irradiation, or transform to Si-anchored single In atoms. Our results provide a novel framework for the controlled self-assembly and heteroatomic anchoring of single atoms and few-atom clusters on graphene.
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Submitted 31 August, 2020;
originally announced September 2020.
Nanostructured-membrane electron phase plates
Authors:
Yujia Yang,
Chung-Soo Kim,
Richard G. Hobbs,
Phillip D. Keathley,
Karl K. Berggren
Abstract:
Electron beams can acquire designed phase modulations by passing through nanostructured material phase plates. These phase modulations enable electron wavefront shaping and benefit electron microscopy, spectroscopy, lithography, and interferometry. However, in the fabrication of electron phase plates, the typically used focused-ion-beam-milling method limits the fabrication throughput and hence th…
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Electron beams can acquire designed phase modulations by passing through nanostructured material phase plates. These phase modulations enable electron wavefront shaping and benefit electron microscopy, spectroscopy, lithography, and interferometry. However, in the fabrication of electron phase plates, the typically used focused-ion-beam-milling method limits the fabrication throughput and hence the active area of the phase plates. Here, we fabricated large-area electron phase plates with electron-beam lithography and reactive-ion-etching. The phase plates are characterized by electron diffraction in transmission electron microscopes with various electron energies, as well as diffractive imaging in a scanning electron microscope. We found the phase plates could produce a null in the center of the bright-field based on coherent interference of diffractive beams. Our work adds capabilities to the fabrication of electron phase plates. The nullification of the direct beam and the tunable diffraction efficiency demonstrated here also paves the way towards novel dark-field electron-microscopy techniques and tunable electron phase plates.
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Submitted 4 January, 2020;
originally announced January 2020.
