-
TeaNet: universal neural network interatomic potential inspired by iterative electronic relaxations
Authors:
So Takamoto,
Satoshi Izumi,
Ju Li
Abstract:
A universal interatomic potential for an arbitrary set of chemical elements is urgently needed in computational materials science. Graph convolution neural network (GCN) has rich expressive power, but previously was mainly employed to transport scalars and vectors, not rank $\ge 2$ tensors. As classic interatomic potentials were inspired by tight-binding electronic relaxation framework, we want to…
▽ More
A universal interatomic potential for an arbitrary set of chemical elements is urgently needed in computational materials science. Graph convolution neural network (GCN) has rich expressive power, but previously was mainly employed to transport scalars and vectors, not rank $\ge 2$ tensors. As classic interatomic potentials were inspired by tight-binding electronic relaxation framework, we want to represent this iterative propagation of rank $\ge 2$ tensor information by GCN. Here we propose an architecture called the tensor embedded atom network (TeaNet) where angular interaction is translated into graph convolution through the incorporation of Euclidean tensors, vectors and scalars. By applying the residual network (ResNet) architecture and training with recurrent GCN weights initialization, a much deeper (16 layers) GCN was constructed, whose flow is similar to an iterative electronic relaxation. Our traning dataset is generated by density functional theory calculation of mostly chemically and structurally randomized configurations. We demonstrate that arbitrary structures and reactions involving the first 18 elements on the periodic table (H to Ar) can be realized satisfactorily by TeaNet, including C-H molecular structures, metals, amorphous SiO${}_2$, and water, showing surprisingly good performance (energy mean absolute error 19 meV/atom) and robustness for arbitrary chemistries involving elements from H to Ar.
△ Less
Submitted 10 October, 2021; v1 submitted 2 December, 2019;
originally announced December 2019.
-
Elucidation of the atomic-scale mechanism of the anisotropic oxidation rate of 4H-SiC between the ($0001$) Si-face and ($000\overline{1}$) C-face by using a new Si-O-C interatomic potential
Authors:
So Takamoto,
Takahiro Yamasaki,
Takahisa Ohno,
Chioko Kaneta,
Asuka Hatano,
Satoshi Izumi
Abstract:
Silicon carbide (SiC) is an attractive semiconductor material for applications in power electronic devices. However, fabrication of a high-quality SiC/SiO${}_2$ interface has been a challenge. It is well-known that there is a great difference in oxidation rate between the Si-face and C-face, and that the quality of oxide on the Si-face is greater than that on the C-face. However, the atomistic mec…
▽ More
Silicon carbide (SiC) is an attractive semiconductor material for applications in power electronic devices. However, fabrication of a high-quality SiC/SiO${}_2$ interface has been a challenge. It is well-known that there is a great difference in oxidation rate between the Si-face and C-face, and that the quality of oxide on the Si-face is greater than that on the C-face. However, the atomistic mechanism of the thermal oxidation of SiC remains to be solved. In this paper, a new Si-C-O interatomic potential was developed to reproduce the kinetics of the thermal oxidation of SiC. Using this newly developed potential, large-scale SiC oxidation simulations at various temperature were performed. The results showed that the activation energy of the Si-face is much larger than that of the C-face. In the case of the Si-face, a flat and aligned interface structure including Si${}^{1+}$ was created. Based on the estimated activation energies of the intermediate oxide states, it is proposed that the stability of the flat interface structure is the origin of the high activation energy of the oxidation of the Si-face. In contrast, in the case of the C-face, it is found that the Si atom at the interface are easily pulled up by the O atoms. This process generates the disordered interface and decreases the activation energy of the oxidation. It is also proposed that many excess C atoms are created in the case of the C-face.
△ Less
Submitted 24 April, 2018;
originally announced April 2018.
-
Atomistic mechanism of graphene growth on SiC substrate: Large-scale molecular dynamics simulation based on a new charge-transfer bond-order type potential
Authors:
So Takamoto,
Takahiro Yamasaki,
Jun Nara,
Takahisa Ohno,
Chioko Kaneta,
Asuka Hatano,
Satoshi Izumi
Abstract:
Thermal decomposition of silicon carbide is a promising approach for the fabrication of graphene. However, the atomistic growth mechanism of graphene remains unclear. This paper describes the development of a new charge-transfer interatomic potential. Carbon bonds with a wide variety of characteristics can be reproduced by the proposed vectorized bond-order term. Large-scale thermal decomposition…
▽ More
Thermal decomposition of silicon carbide is a promising approach for the fabrication of graphene. However, the atomistic growth mechanism of graphene remains unclear. This paper describes the development of a new charge-transfer interatomic potential. Carbon bonds with a wide variety of characteristics can be reproduced by the proposed vectorized bond-order term. Large-scale thermal decomposition simulation enables us to observe the continuous growth process of the multi-ring carbon structure. The annealing simulation reveals the atomistic process by which the multi-ring carbon structure is transformed to flat graphene involving only 6-membered rings. Also, it is found that the surface atoms of the silicon carbide substrate enhance the homogeneous graphene formation.
△ Less
Submitted 21 February, 2018;
originally announced February 2018.
-
Doping-dependence of nodal quasiparticle properties in high-$T_{\rm c}$ cuprates studied by laser-excited angle-resolved photoemission spectroscopy
Authors:
K. Ishizaka,
T. Kiss,
S. Izumi,
M. Okawa,
T. Shimojima,
A. Chainani,
T. Togashi,
S. Watanabe,
C. -T. Chen,
X. Y. Wang,
T. Mochiku,
T. Nakane,
K. Hirata,
S. Shin
Abstract:
We investigate the doping dependent low energy, low temperature ($T$ = 5 K) properties of nodal quasiparticles in the d-wave superconductor Bi$_{2.1}$Sr$_{1.9}$CaCu$_2$O$_{8+δ}$ (Bi2212). By utilizing ultrahigh resolution laser-excited angle-resolved photoemission spectroscopy, we obtain precise band dispersions near $E_{F}$, mean free paths and scattering rates ($Γ$) of quasiparticles. For opti…
▽ More
We investigate the doping dependent low energy, low temperature ($T$ = 5 K) properties of nodal quasiparticles in the d-wave superconductor Bi$_{2.1}$Sr$_{1.9}$CaCu$_2$O$_{8+δ}$ (Bi2212). By utilizing ultrahigh resolution laser-excited angle-resolved photoemission spectroscopy, we obtain precise band dispersions near $E_{F}$, mean free paths and scattering rates ($Γ$) of quasiparticles. For optimally and overdoped, we obtain very sharp quasiparticle peaks of 8 meV and 6 meV full-width at half-maximum, respectively, in accord with terahertz conductivity. For all doping levels, we find the energy-dependence of $Γ\sim |ω|$, while $Γ$($ω=0$) shows a monotonic increase from overdoping to underdoping. The doping dependence suggests the role of electronic inhomogeneity on the nodal quasiparticle scattering at low temperature (5 K $\lsim 0.07T_{\rm c}$), pronounced in the underdoped region.
△ Less
Submitted 16 October, 2007;
originally announced October 2007.
