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Electron-Hole Separation in Ferroelectric Oxides for Efficient Photovoltaic Responses
Authors:
Donghoon Kim,
Hyeon Han,
June Ho Lee,
Jeffrey C. Grossman,
Donghun Kim,
Hyun Myung Jang
Abstract:
Despite their potential to exceed the theoretical Shockley-Queisser limit, ferroelectric photovoltaics (FPVs) have performed inefficiently due to their extremely low photocurrents. Incorporating Bi2FeCrO6 (BFCO) as the light absorber in FPVs has recently led to impressively high and record photocurrents [Nechache et al. Nature Photon. 2015, 9, 61], reviving the FPV field. However, our understandin…
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Despite their potential to exceed the theoretical Shockley-Queisser limit, ferroelectric photovoltaics (FPVs) have performed inefficiently due to their extremely low photocurrents. Incorporating Bi2FeCrO6 (BFCO) as the light absorber in FPVs has recently led to impressively high and record photocurrents [Nechache et al. Nature Photon. 2015, 9, 61], reviving the FPV field. However, our understanding of this remarkable phenomenon is far from satisfactory. Here, we use first-principles calculations to determine that such excellent performance mainly lies in the efficient separation of electron-hole (e-h) pairs. We show that photoexcited electrons and holes in BFCO are spatially separated on the Fe and Cr sites, respectively. This separation is much more pronounced in disordered BFCO phases, which show exceptional PV responses. We further set out to design a strategy for next-generation FPVs, not limited to BFCO, by exploring 44 additional Bi-based double-perovskite oxides. We suggest 9 novel active-layer materials that can offer strong e-h separations and a desired band gap energy for application in FPVs. Our work indicates that charge separation is the most important issue to be addressed for FPVs to compete with conventional devices.
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Submitted 29 November, 2017;
originally announced November 2017.
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Switchable Ferroelectric Photovoltaic Effects in Epitaxial Thin Films of h-RFeO3 having Narrow Optical Band Gaps
Authors:
Hyeon Han,
Donghoon Kim,
Ji Hyun Lee,
Jucheol Park,
Sang Yeol Nam,
Mingi Choi,
Kijung Yong,
Hyun Myung Jang
Abstract:
Ferroelectric photovoltaics (FPVs) have drawn much attention owing to their high stability, environmental safety, anomalously high photovoltages, coupled with reversibly switchable photovoltaic responses. However, FPVs suffer from extremely low photocurrents, which is primarily due to their wide band gaps. Here, we present a new class of FPVs by demonstrating switchable ferroelectric photovoltaic…
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Ferroelectric photovoltaics (FPVs) have drawn much attention owing to their high stability, environmental safety, anomalously high photovoltages, coupled with reversibly switchable photovoltaic responses. However, FPVs suffer from extremely low photocurrents, which is primarily due to their wide band gaps. Here, we present a new class of FPVs by demonstrating switchable ferroelectric photovoltaic effects using hexagonal ferrite (h-RFeO3) thin films having narrow band gaps of ~1.2 eV, where R denotes rare-earth ions. FPVs with narrow band gaps suggests their potential applicability as photovoltaic and optoelectronic devices. The h-RFeO3 films further exhibit reasonably large ferroelectric polarizations, which possibly reduces a rapid recombination rate of the photo-generated electron-hole pairs. The power conversion efficiency (PCE) of h-RFeO3 thin-film devices is sensitive on the magnitude of polarization. In the case of h-TmFeO3 (h-TFO) thin film, the measured PCE is twice as large as that of the BiFeO3 thin film, a prototypic FPV. We have further shown that the switchable photovoltaic effect dominates over the unswitchable internal field effect arising from the net built-in potential. This work thus demonstrates a new class of FPVs towards high-efficiency solar cell and optoelectronic applications.
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Submitted 8 November, 2017;
originally announced November 2017.
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Two Distinct Modes of Hydrogen-Bonding Interaction in the Prototypic Hybrid Halide Perovskite, Tetragonal CH3NH3PbI3
Authors:
June Ho Lee,
Jung-Hoon Lee,
Eui-Hyun Kong,
Hyun M. Jang
Abstract:
In spite of the key role of hydrogen bonding in the structural stabilization of the prototypic hybrid halide perovskite, CH3NH3PbI3 (MAPbI3), little progress has been made in our in-depth understanding of the hydrogen-bonding interaction between the MA+-ion and the iodide ions in the PbI6-octahedron network. Herein, we show that there exist two distinct types of the hydrogen-bonding interaction, n…
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In spite of the key role of hydrogen bonding in the structural stabilization of the prototypic hybrid halide perovskite, CH3NH3PbI3 (MAPbI3), little progress has been made in our in-depth understanding of the hydrogen-bonding interaction between the MA+-ion and the iodide ions in the PbI6-octahedron network. Herein, we show that there exist two distinct types of the hydrogen-bonding interaction, naming a- and b-modes, in the tetragonal MAPbI3 on the basis of symmetry argument and density-functional theory calculations. The computed Kohn-Sham (K-S) energy difference between these two interaction modes is 45.14 meV per MA-site with the a-interaction mode being responsible for the stable hydrogen-bonding network. We have further estimated the individual bonding strength for the ten relevant hydrogen bonds having a bond critical point. The net difference in the total hydrogen-bonding energies between these two interaction modes is 43.87 meV per MA-site, which nearly coincides with the K-S energy difference of 45.14 meV.
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Submitted 9 November, 2015;
originally announced November 2015.
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Ferroelectric polarization switching with a remarkably high activation-energy in orthorhombic GaFeO3 thin films
Authors:
Seungwoo Song,
Hyun Myung Jang,
Nam-Suk Lee,
Jong Y. Son,
Rajeev Gupta,
Ashish Garg,
Jirawit Ratanapreechachai,
James F. Scott
Abstract:
Orthorhombic GaFeO3 (o-GFO) with the polar Pna21 space group is a prominent ferrite by virtue of its piezoelectricity and ferrimagnetism, coupled with magneto-electric effects. Herein, we unequivocally demonstrate a large ferroelectric remanent polarization in undoped o-GFO thin films by adopting either a hexagonal strontium titanate (STO) or a cubic yttrium-stabilized zirconia (YSZ) substrate. Th…
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Orthorhombic GaFeO3 (o-GFO) with the polar Pna21 space group is a prominent ferrite by virtue of its piezoelectricity and ferrimagnetism, coupled with magneto-electric effects. Herein, we unequivocally demonstrate a large ferroelectric remanent polarization in undoped o-GFO thin films by adopting either a hexagonal strontium titanate (STO) or a cubic yttrium-stabilized zirconia (YSZ) substrate. The polarization-electric-field hysteresis curves of the polar c-axis-grown o-GFO film on a SrTiO3/STO substrate show the net switching polarization of ~35 μC/cm2 with an unusually high coercive field of +-1400 kV/cm at room temperature. The PUND measurement also demonstrates the switching polarization of ~26 μC/cm2. The activation energy for the polarization switching, as obtained by density-functional theory calculations, is remarkably high, 1.05 eV per formula unit. This high value accounts for the observed stability of the polar Pna21 phase over a wide range of temperature up to 1368 K.
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Submitted 19 October, 2015;
originally announced October 2015.
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Anomalous domain periodicity observed in ferroelectric PbTiO3 nanodots with 180o stripe domains
Authors:
Jong Yeog Son,
Jung-Hoon Lee,
Young-Han Shin,
Hyun Myung Jang
Abstract:
PbTiO3-based nano-scale dots and tubes have received a great deal of attention owing to their potential applications to nonvolatile memories and multi-functional devices. As for the size effect of 180o stripe domains in ferroelectric thin films, there have been extensive reports on the thickness-dependent domain periodicity. All these studies have revealed that the domain periodicity of 180o strip…
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PbTiO3-based nano-scale dots and tubes have received a great deal of attention owing to their potential applications to nonvolatile memories and multi-functional devices. As for the size effect of 180o stripe domains in ferroelectric thin films, there have been extensive reports on the thickness-dependent domain periodicity. All these studies have revealed that the domain periodicity of 180o stripe domains scales with the film thickness (d) according to the classical Landau-Lifshitz-Kittel (LLK) scaling law down to the thickness of ~2 nm. In the case of PbTiO3 nanodots, however, we obtained a quite striking correlation that for the thickness less than a certain critical value, dc (~35 nm), the domain width even increases with decreasing thickness of the nanodot, which surprisingly indicates a negative value in the LLK scaling-law exponent. On the basis of theoretical considerations of dc, we attribute this anomalous domain periodicity to the presence of a nonferroelectric surface layer, in addition to the finite lateral-size effect of a ferroelectric nanodot.
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Submitted 15 January, 2013;
originally announced January 2013.
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Effects of spin-orbit interaction on magnetic and electronic structures in antiferromagnetic LaFeAsO
Authors:
Sehoon Oh,
Jung-Hoon Lee,
Hyun Myung Jang,
Hyoung Joon Choi
Abstract:
Magnetic and electronic structures in LaFeAsO in the single-stripe-type antiferromagnetic (AFM) phase are studied using first-principles density-functional calculations including the spin-orbit interaction. We show that the longitudinal ordering (LO) where Fe magnetic moments are parallel or anti-parallel with the in-plane AFM ordering vector is lower in energy than transverse orderings (TOs), in…
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Magnetic and electronic structures in LaFeAsO in the single-stripe-type antiferromagnetic (AFM) phase are studied using first-principles density-functional calculations including the spin-orbit interaction. We show that the longitudinal ordering (LO) where Fe magnetic moments are parallel or anti-parallel with the in-plane AFM ordering vector is lower in energy than transverse orderings (TOs), in good agreement with neutron diffraction experiments. Calculated energy difference between LO and TOs is about 0.1 meV per Fe atom, indicating that LO will prevail at temperature below about 1 K. We also show that the spin-orbit interaction splits degenerate bands at some high-symmetry points in the Brillouin zone by about 60 meV, depending on spatial directions of the Fe magnetic moments.
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Submitted 26 December, 2016; v1 submitted 5 August, 2010;
originally announced August 2010.
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Single-filament Composite MgB2/SUS Ribbons by Powder-In-Tube Process
Authors:
K. J. Song,
N. J. Lee,
H. M. Jang,
H. S. Ha,
D. W. Ha,
S. S. OH,
M. H. Sohn,
Y. K. Kwon,
K. S. Ryu
Abstract:
We report the successful fabrication of single-filament composite MgB2/SUS ribbons, as an ultra-robust conductor type, employing the powder-in-tube (PIT) process, by swaging and cold rolling only. The remarkable transport critical current (Ic) of the non-sintered MgB2/SUS ribbon has observed, as an unexpected result. Transport critical currents Ic ~ 316 A at T = 4.2 K and Ic ~ 82 A at T = 20 K w…
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We report the successful fabrication of single-filament composite MgB2/SUS ribbons, as an ultra-robust conductor type, employing the powder-in-tube (PIT) process, by swaging and cold rolling only. The remarkable transport critical current (Ic) of the non-sintered MgB2/SUS ribbon has observed, as an unexpected result. Transport critical currents Ic ~ 316 A at T = 4.2 K and Ic ~ 82 A at T = 20 K were observed at self-field, for the non-sintered composite MgB2/SUS ribbon. In addition, the persistent current density Jp values, that were estimated by Bean formula, were more than ~ 7  105 A/cm2 at T = 5 K, and ~ 1.2  105 A/cm2 at T = 30 K, for the sintered composite MgB2/SUS ribbon, at H = 0 G.
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Submitted 6 June, 2001;
originally announced June 2001.
