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Intrinsic supercurrent non-reciprocity coupled to the crystal structure of a van der Waals Josephson barrier
Authors:
Jae-Keun Kim,
Kun-Rok Jeon,
Pranava K. Sivakumar,
Jaechun Jeon,
Chris Koerner,
Georg Woltersdorf,
Stuart S. P. Parkin
Abstract:
Non-reciprocal electronic transport in a spatially homogeneous system arises from the simultaneous breaking of inversion and time-reversal symmetries. Superconducting and Josephson diodes, a key ingredient for future non-dissipative quantum devices, have recently been realized. Only a few examples of a vertical superconducting diode effect have been reported and its mechanism, especially whether i…
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Non-reciprocal electronic transport in a spatially homogeneous system arises from the simultaneous breaking of inversion and time-reversal symmetries. Superconducting and Josephson diodes, a key ingredient for future non-dissipative quantum devices, have recently been realized. Only a few examples of a vertical superconducting diode effect have been reported and its mechanism, especially whether intrinsic or extrinsic, remains elusive. Here we demonstrate a substantial supercurrent non-reciprocity in a van der Waals vertical Josephson junction formed with a Td-WTe2 barrier and NbSe2 electrodes that clearly reflects the intrinsic crystal structure of Td-WTe2. The Josephson diode efficiency increases with the Td-WTe2 thickness up to critical thickness, and all junctions, irrespective of the barrier thickness, reveal magneto-chiral characteristics with respect to a mirror plane of Td-WTe2. Our results, together with the twist-angle-tuned magneto-chirality of a Td-WTe2 double-barrier junction, show that two-dimensional materials promise vertical Josephson diodes with high efficiency and tunability.
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Submitted 23 March, 2023;
originally announced March 2023.
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Role of two-dimensional Ising superconductivity in the non-equilibrium quasiparticle spin-to-charge conversion efficiency
Authors:
Kun-Rok Jeon,
Kyungjune Cho,
Anirban Chakraborty,
Jae-Chun Jeon,
Jiho Yoon,
Hyeon Han,
Jae-Keun Kim,
Stuart S. P. Parkin
Abstract:
Non-equilibrium studies of two-dimensional (2D) superconductors (SCs) with Ising spin-orbit coupling are prerequisite for their successful application to equilibrium spin-triplet Cooper pairs and, potentially, Majorana fermions. By taking advantage of the recent discoveries of 2D SCs and their compatibility with any other materials, we fabricate here non-local magnon devices to examine how such 2D…
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Non-equilibrium studies of two-dimensional (2D) superconductors (SCs) with Ising spin-orbit coupling are prerequisite for their successful application to equilibrium spin-triplet Cooper pairs and, potentially, Majorana fermions. By taking advantage of the recent discoveries of 2D SCs and their compatibility with any other materials, we fabricate here non-local magnon devices to examine how such 2D Ising superconductivity affects the conversion efficiency of magnon spin to quasiparticle charge in superconducting flakes of 2H-NbSe2 transferred onto ferrimagnetic insulating Y3Fe5O12. Comparison with a reference device based on a conventionally paired superconductor shows that the Y3Fe5O12-induced in-plane (IP) exchange spin-splitting in the NbSe2 flake is hindered by its inherent out-of-plane (OOP) spin-orbit-field, which, in turn, limits the transition-state enhancement of the spin-to-charge conversion efficiency. Our out-of-equilibrium study highlights the significance of symmetry matching between underlying Cooper pairs and exchange-induced spin-splitting for the giant transition-state spin-to-charge conversion and may have implications towards proximity-engineered spin-polarized triplet pairing via tuning the relative strength of IP exchange and OOP spin-orbit fields in ferromagnetic insulator/2D Ising SC bilayers.
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Submitted 26 October, 2021; v1 submitted 24 May, 2021;
originally announced May 2021.
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Giant transition-state enhancement of quasiparticle spin-Hall effect in an exchange-spin-split superconductor detected by non-local magnon spin-transport
Authors:
Kun-Rok Jeon,
Jae-Chun Jeon,
Xilin Zhou,
Andrea Migliorini,
Jiho Yoon,
Stuart S. P. Parkin
Abstract:
Although recent experiments and theories have shown a variety of exotic transport properties of non-equilibrium quasiparticles (QPs) in superconductor (SC)-based devices with either Zeeman or exchange spin-splitting, how QP interplays with magnon spin currents remains elusive. Here, using non-local magnon spin-transport devices where a singlet SC (Nb) on top of a ferrimagnetic insulator (Y3Fe5O12)…
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Although recent experiments and theories have shown a variety of exotic transport properties of non-equilibrium quasiparticles (QPs) in superconductor (SC)-based devices with either Zeeman or exchange spin-splitting, how QP interplays with magnon spin currents remains elusive. Here, using non-local magnon spin-transport devices where a singlet SC (Nb) on top of a ferrimagnetic insulator (Y3Fe5O12) serves as a magnon spin detector, we demonstrate that the conversion efficiency of magnon spin to QP charge via inverse spin-Hall effect (iSHE) in such an exchange-spin-split SC can be greatly enhanced by up to 3 orders of magnitude compared with that in the normal state, particularly when its interface superconducting gap matches the magnon spin accumulation. Through systematic measurements with varying the current density and SC thickness, we identify that superconducting coherence peaks and exchange spin-splitting of the QP density-of-states, yielding a larger spin excitation while retaining a modest QP charge-imbalance relaxation, are responsible for the giant QP iSHE. The latter exchange-field-modified QP relaxation is experimentally proved by spatially resolved measurements with varying the separation of electrical contacts on the spin-split Nb.
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Submitted 28 August, 2020; v1 submitted 20 April, 2020;
originally announced April 2020.
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Spin-transport in superconductors
Authors:
K. Ohnishi,
S. Komori,
G. Yang,
K. -R. Jeon,
L. A. B. Olde Olthof,
X. Montiel,
M. G. Blamire,
J. W. A. Robinson
Abstract:
Spin-transport in superconductors is a subject of fundamental and technical importance with the potential for applications in superconducting-based cryogenic memory and logic. Research in this area is rapidly intensifying with recent discoveries establishing the field of superconducting spintronics. In this perspective we provide an overview of the experimental state-of-the-art with a particular f…
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Spin-transport in superconductors is a subject of fundamental and technical importance with the potential for applications in superconducting-based cryogenic memory and logic. Research in this area is rapidly intensifying with recent discoveries establishing the field of superconducting spintronics. In this perspective we provide an overview of the experimental state-of-the-art with a particular focus on local and nonlocal spin-transport in superconductors, and propose device schemes to demonstrate the viability of superconducting spin-based devices.
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Submitted 17 March, 2020;
originally announced March 2020.
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Tunable pure spin supercurrents and the demonstration of a superconducting spin-wave device
Authors:
Kun-Rok Jeon,
Xavier Montiel,
Sachio Komori,
Chiara Ciccarelli,
James Haigh,
Hidekazu Kurebayashi,
Lesley F. Cohen,
Chang-Min Lee,
Mark G. Blamire,
Jason W. A. Robinson
Abstract:
Recent ferromagnetic resonance experiments and theory of Pt/Nb/Ni8Fe2 proximity-coupled structures strongly suggest that spin-orbit coupling (SOC) in Pt in conjunction with a magnetic exchange field in Ni8Fe2 are the essential ingredients to generate a pure spin supercurrent channel in Nb. Here, by substituting Pt for a perpendicularly magnetized Pt/Co/Pt spin-sink, we are able to demonstrate the…
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Recent ferromagnetic resonance experiments and theory of Pt/Nb/Ni8Fe2 proximity-coupled structures strongly suggest that spin-orbit coupling (SOC) in Pt in conjunction with a magnetic exchange field in Ni8Fe2 are the essential ingredients to generate a pure spin supercurrent channel in Nb. Here, by substituting Pt for a perpendicularly magnetized Pt/Co/Pt spin-sink, we are able to demonstrate the role of SOC, and show that pure spin supercurrent pumping efficiency across Nb is tunable by controlling the magnetization direction of Co. By inserting a Cu spacer with weak SOC between Nb and Pt/(Co/Pt) spin-sink, we also prove that Rashba type SOC is key for forming and transmitting pure spin supercurrents across Nb. Finally, by engineering these properties within a single multilayer structure, we demonstrate a prototype superconducting spin-wave (SW) device in which lateral SW propagation is gateable via the opening or closing of a vertical pure spin supercurrent channel in Nb.
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Submitted 31 October, 2019; v1 submitted 2 August, 2019;
originally announced August 2019.
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Abrikosov vortex nucleation and its detrimental effect on superconducting spin pumping in Pt/Nb/Ni80Fe20/Nb/Pt proximity structures
Authors:
Kun-Rok Jeon,
Chiara Ciccarelli,
Hidekazu Kurebayashi,
Lesley F. Cohen,
Sachio Komori,
Jason W. A. Robinson,
Mark G. Blamire
Abstract:
We report Abrikosov vortex nucleation in Pt/Nb/Ni80Fe20/Nb/Pt proximity-coupled structures under oblique ferromagnetic resonance (FMR) that turns out to be detrimental to superconducting spin pumping. By measuring an out-of-plane field-angle θH dependence and comparison with Pt-absent control samples, we show that as θH increases, the degree of enhancement (suppression) of spin pumping efficiency…
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We report Abrikosov vortex nucleation in Pt/Nb/Ni80Fe20/Nb/Pt proximity-coupled structures under oblique ferromagnetic resonance (FMR) that turns out to be detrimental to superconducting spin pumping. By measuring an out-of-plane field-angle θH dependence and comparison with Pt-absent control samples, we show that as θH increases, the degree of enhancement (suppression) of spin pumping efficiency in the superconducting state for the Pt-present (Pt-absent) sample diminishes and it reverts to the normal state value at θH = 90°. This can be explained in terms of a substantial out-of-plane component of the resonance field for the Ni80Fe20 layer (with in-plane magnetization anisotropy and high aspect ratio) that approaches the upper critical field of the Nb, turning a large fraction of the singlet superconductor volume into the normal state.
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Submitted 22 March, 2019; v1 submitted 11 February, 2019;
originally announced February 2019.
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Spin transport parameters of NbN thin films characterised by spin pumping experiments
Authors:
K. Rogdakis,
A. Sud,
M. Amado,
C. M. Lee,
L. McKenzie-Sell,
K. R. Jeon,
M. Cubukcu,
M. G. Blamire,
J. W. A. Robinson,
L. F. Cohen,
H. Kurebayashi
Abstract:
We present measurements of ferromagnetic-resonance - driven spin pumping and inverse spin-Hall effect in NbN/Y3Fe5O12 (YIG) bilayers. A clear enhancement of the (effective) Gilbert damping constant of the thin-film YIG was observed due to the presence of the NbN spin sink. By varying the NbN thickness and employing spin-diffusion theory, we have estimated the room temperature values of the spin di…
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We present measurements of ferromagnetic-resonance - driven spin pumping and inverse spin-Hall effect in NbN/Y3Fe5O12 (YIG) bilayers. A clear enhancement of the (effective) Gilbert damping constant of the thin-film YIG was observed due to the presence of the NbN spin sink. By varying the NbN thickness and employing spin-diffusion theory, we have estimated the room temperature values of the spin diffusion length and the spin Hall angle in NbN to be 14 nm and -1.1 10-2, respectively. Furthermore, we have determined the spin-mixing conductance of the NbN/YIG interface to be 10 nm-2. The experimental quantification of these spin transport parameters is an important step towards the development of superconducting spintronic devices involving NbN thin films.
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Submitted 17 January, 2019;
originally announced January 2019.
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Effect of Meissner screening and trapped magnetic flux on magnetization dynamics in thick Nb/Ni80Fe20/Nb trilayers
Authors:
Kun-Rok Jeon,
Chiara Ciccarelli,
Hidekazu Kurebayashi,
Lesley F. Cohen,
Xavier Montiel,
Matthias Eschrig,
Thomas Wagner,
Sachio Komori,
Anand Srivastava,
Jason W. A. Robinson,
Mark G. Blamire
Abstract:
We investigate the influence of Meissner screening and trapped magnetic flux on magnetization dynamics for a Ni80Fe20 film sandwiched between two thick Nb layers (100 nm) using broadband (5-20 GHz) ferromagnetic resonance (FMR) spectroscopy. Below the superconducting transition Tc of Nb, significant zero-frequency line broadening (5-6 mT) and DC resonance field shift (50 mT) to a low field are bot…
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We investigate the influence of Meissner screening and trapped magnetic flux on magnetization dynamics for a Ni80Fe20 film sandwiched between two thick Nb layers (100 nm) using broadband (5-20 GHz) ferromagnetic resonance (FMR) spectroscopy. Below the superconducting transition Tc of Nb, significant zero-frequency line broadening (5-6 mT) and DC resonance field shift (50 mT) to a low field are both observed if the Nb thickness is comparable to the London penetration depth of Nb films (>= 100 nm). We attribute the observed peculiar behaviors to the increased incoherent precession near the Ni80Fe20/Nb interface and the effectively focused magnetic flux in the middle Ni80Fe20 caused by strong Meissner screening and (defect-)trapped flux of the thick adjacent Nb layers. This explanation is supported by static magnetic properties of the samples and comparison with FMR data on thick Nb/Ni80Fe20 bilayers. Great care should therefore be taken in the analysis of FMR response in ferromagnetic Josephson structures with thick superconductors, a fundamental property for high-frequency device applications of spin-polarized supercurrents.
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Submitted 7 January, 2019; v1 submitted 19 October, 2018;
originally announced October 2018.
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Spin-pumping-induced inverse spin-Hall effect in Nb/Ni80Fe20 bilayers and its strong decay across the superconducting transition temperature
Authors:
K. -R. Jeon,
C. Ciccarelli,
H. Kurebayashi,
J. Wunderlich,
L. F. Cohen,
S. Komori,
J. W. A. Robinson,
M. G. Blamire
Abstract:
We quantify the spin Hall angle θSH and spin diffusion length lsd of Nb from inverse spin-Hall effect (iSHE) measurements in Nb/Ni80Fe20 bilayers under ferromagnetic resonance. By varying the Nb thickness tNb and comparing to a Ni80Fe20/Pt reference sample, room temperature values of θSH and lsd for Nb are estimated to be approximately -0.001 and 30 nm, respectively. We also investigate the iSHE a…
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We quantify the spin Hall angle θSH and spin diffusion length lsd of Nb from inverse spin-Hall effect (iSHE) measurements in Nb/Ni80Fe20 bilayers under ferromagnetic resonance. By varying the Nb thickness tNb and comparing to a Ni80Fe20/Pt reference sample, room temperature values of θSH and lsd for Nb are estimated to be approximately -0.001 and 30 nm, respectively. We also investigate the iSHE as a function of temperature T for different tNb. Above the superconducting transition temperature Tc of Nb, a clear tNb-dependent T evolution of the iSHE is observed whereas below Tc, the iSHE voltage drops rapidly and is below the sensitivity of our measurement setup at a lower T. This suggests the strong decay of the quasiparticle (QP) charge-imbalance relaxation length across Tc, as supported by an additional investigation of the iSHE in a different sample geometry along with model calculation. Our finding suggests careful consideration should be made when developing superconductor spin-Hall devices that intend to utilize QP-mediated spin-to-charge interconversion.
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Submitted 6 June, 2018; v1 submitted 2 May, 2018;
originally announced May 2018.
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Thermal spin injection and accumulation in CoFe/MgO tunnel contacts to n-type Si through Seebeck spin tunneling
Authors:
Kun-Rok Jeon,
Byoung-Chul Min,
Seung-Young Park,
Kyeong-Dong Lee,
Hyon-Seok Song,
Youn-Ho Park,
Sung-Chul Shin
Abstract:
We report the thermal spin injection and accumulation in crystalline CoFe/MgO tunnel contacts to n-type Si through Seebeck spin tunneling (SST). With the Joule heating (laser heating) of Si (CoFe), the thermally induced spin accumulation is detected by means of the Hanle effect for both polarities of the temperature gradient across the tunnel contact. The magnitude of the thermal spin signal scale…
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We report the thermal spin injection and accumulation in crystalline CoFe/MgO tunnel contacts to n-type Si through Seebeck spin tunneling (SST). With the Joule heating (laser heating) of Si (CoFe), the thermally induced spin accumulation is detected by means of the Hanle effect for both polarities of the temperature gradient across the tunnel contact. The magnitude of the thermal spin signal scales linearly with the heating power and its sign is reversed as we invert the temperature gradient, demonstrating the major features of SST and thermal spin accumulation. We observe that, for the Si (CoFe) heating, the thermal spin signal induced by SST corresponds to the majority (minority) spin accumulation in the Si. Based on a quantitative comparison of thermal and electrical spin signals, it is noted that the thermal spin injection through SST can be a viable approach for the efficient injection of spin accumulation
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Submitted 28 August, 2013; v1 submitted 15 July, 2013;
originally announced July 2013.
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Electrical Investigation of the Oblique Hanle Effect in Ferromagnet/Oxide/Semiconductor Contacts
Authors:
Kun-Rok Jeon,
Byoung-Chul Min,
Youn-Ho Park,
Seung-Young Park,
Sung-Chul Shin
Abstract:
We have investigated the electrical Hanle effect with magnetic fields applied at an oblique angle (θ) to the spin direction (the oblique Hanle effect, OHE) in CoFe/MgO/semiconductor (SC) contacts by employing a three-terminal measurement scheme. The electrical oblique Hanle signals obtained in CoFe/MgO/Si and CoFe/MgO/Ge contacts show clearly different line shapes depending on the spin lifetime of…
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We have investigated the electrical Hanle effect with magnetic fields applied at an oblique angle (θ) to the spin direction (the oblique Hanle effect, OHE) in CoFe/MgO/semiconductor (SC) contacts by employing a three-terminal measurement scheme. The electrical oblique Hanle signals obtained in CoFe/MgO/Si and CoFe/MgO/Ge contacts show clearly different line shapes depending on the spin lifetime of the host SC. Notably, at moderate magnetic fields, the asymptotic values of the oblique Hanle signals (in both contacts) are consistently reduced by a factor of cos^2(θ) irrespective of the bias current and temperature. These results are in good agreement with predictions of the spin precession and relaxation model for the electrical oblique Hanle effect. At high magnetic fields where the magnetization of CoFe is significantly tilted from the film plane to the magnetic field direction, we find that the observed angular dependence of voltage signals in the CoFe/MgO/Si and CoFe/MgO/Ge contacts are well explained by the OHE, considering the misalignment angle between the external magnetic field and the magnetization of CoFe.
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Submitted 9 January, 2013; v1 submitted 14 November, 2012;
originally announced November 2012.
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Effect of spin relaxation rate on the interfacial spin depolarization in ferromagnet/oxide/semiconductor contacts
Authors:
Kun-Rok Jeon,
Byoung-Chul Min,
Youn-Ho Park,
Young-Hun Jo,
Seung-Young Park,
Chang-Yup Park,
Sung-Chul Shin
Abstract:
Combined measurements of normal and inverted Hanle effects in CoFe/MgO/semiconductor (SC) contacts reveal the effect of spin relaxation rate on the interfacial spin depolarization (ISD) from local magnetic fields. Despite the similar ferromagnetic electrode and interfacial roughness in both CoFe/MgO/Si and CoFe/MgO/Ge contacts, we have observed clearly different features of the ISD depending on th…
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Combined measurements of normal and inverted Hanle effects in CoFe/MgO/semiconductor (SC) contacts reveal the effect of spin relaxation rate on the interfacial spin depolarization (ISD) from local magnetic fields. Despite the similar ferromagnetic electrode and interfacial roughness in both CoFe/MgO/Si and CoFe/MgO/Ge contacts, we have observed clearly different features of the ISD depending on the host SC. The precession and relaxation of spins in different SCs exposed to the local fields from more or less the same ferromagnets give rise to a notably different ratio of the inverted Hanle signal to the normal one. At room temperature, a large ISD is observed in the CoFe/MgO/Si contact, but a small ISD in the CoFe/MgO/Ge contact. The ISD of the CoFe/MgO/Ge contact has been substantially increased at low temperature. These results can be ascribed to the difference of spin relaxation in host SCs. A model calculation of the ISD, considering the spin precession due to the local field and the spin relaxation in the host SC, explains the temperature and bias dependence of the ISD consistently.
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Submitted 20 March, 2012; v1 submitted 26 October, 2011;
originally announced October 2011.
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Electrical spin injection and accumulation in CoFe/MgO/Ge contacts at room temperature
Authors:
Kun-Rok Jeon,
Byoung-Chul Min,
Young-Hun Jo,
Hun-Sung Lee,
Il-Jae Shin,
Chang-Yup Park,
Seung-Young Park,
Sung-Chul Shin
Abstract:
We first report the all-electrical spin injection and detection in CoFe/MgO/moderately doped n-Ge contact at room temperature (RT), employing threeterminal Hanle measurements. A sizable spin signal of ~170 kΩ μm^2 has been observed at RT, and the analysis using a single-step tunneling model gives a spin lifetime of ~120 ps and a spin diffusion length of ~683 nm in Ge. The observed spin signal show…
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We first report the all-electrical spin injection and detection in CoFe/MgO/moderately doped n-Ge contact at room temperature (RT), employing threeterminal Hanle measurements. A sizable spin signal of ~170 kΩ μm^2 has been observed at RT, and the analysis using a single-step tunneling model gives a spin lifetime of ~120 ps and a spin diffusion length of ~683 nm in Ge. The observed spin signal shows asymmetric bias and temperature dependences which are strongly related to the asymmetry of the tunneling process.
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Submitted 15 August, 2011;
originally announced August 2011.
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Effective screening and the plasmaron bands in Graphene
Authors:
Andrew L. Walter,
Aaron Bostwick,
Ki-Joon Jeon,
Florian Speck,
Markus Ostler,
Thomas Seyller,
Luca Moreschini,
Young Jun Chang,
Marco Polini,
Reza Asgari,
Allan H. MacDonald,
Karsten Horn,
Eli Rotenberg
Abstract:
Electron-plasmon coupling in graphene has recently been shown to give rise to a "plasmaron" quasiparticle excitation. The strength of this coupling has been predicted to depend on the effective screening, which in turn is expected to depend on the dielectric environment of the graphene sheet. Here we compare the strength of enviromental screening for graphene on four different substrates by evalua…
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Electron-plasmon coupling in graphene has recently been shown to give rise to a "plasmaron" quasiparticle excitation. The strength of this coupling has been predicted to depend on the effective screening, which in turn is expected to depend on the dielectric environment of the graphene sheet. Here we compare the strength of enviromental screening for graphene on four different substrates by evaluating the separation of the plasmaron bands from the hole bands using Angle Resolved PhotoEmission Spectroscopy. Comparison with G0W-RPA predictions are used to determine the effective dielectric constant of the underlying substrate layer. We also show that plasmaron and electronic properties of graphene can be independently manipulated, an important aspect of a possible use in "plasmaronic" devices.
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Submitted 21 July, 2011;
originally announced July 2011.
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Highly p-doped graphene obtained by fluorine intercalation
Authors:
Andrew L. Walter,
Ki-Joon Jeon,
Aaron Bostwick,
Florian Speck,
Markus Ostler,
Thomas Seyller,
Luca Moreschini,
Yong Su Kim,
Young Jun Chang,
Karsten Horn,
Eli Rotenberg
Abstract:
We present a method for decoupling epitaxial graphene grown on SiC(0001) by intercalation of a layer of fluorine at the interface. The fluorine atoms do not enter into a covalent bond with graphene, but rather saturate the substrate Si bonds. This configuration of the fluorine atoms induces a remarkably large hole density of p \approx 4.5 \times 1013 cm-2, equivalent to the location of the Fermi l…
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We present a method for decoupling epitaxial graphene grown on SiC(0001) by intercalation of a layer of fluorine at the interface. The fluorine atoms do not enter into a covalent bond with graphene, but rather saturate the substrate Si bonds. This configuration of the fluorine atoms induces a remarkably large hole density of p \approx 4.5 \times 1013 cm-2, equivalent to the location of the Fermi level at 0.79 eV above the Dirac point ED .
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Submitted 14 April, 2011;
originally announced April 2011.
