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Candidate platform for studying flatband-induced spin-triplet superconductivity
Authors:
P. Sidorczak,
W. Wolkanowicz,
A. Kaleta,
M. Wójcik,
S. Gierałtowska,
K. Gas,
T. Płociński,
R. Minikayev,
S. Kret,
M. Sawicki,
T. Wojtowicz,
D. Wasik,
M. Gryglas-Borysiewicz,
K. Dybko
Abstract:
This paper explores the potential for spin-triplet superconductivity in molecular beam epitaxy-grown IV-VI semiconductor superlattices. The findings present compelling evidence for spin-triplet pairing in PbTe/SnTe by the method of soft point-contact spectroscopy and spin-polarised point-contact spectroscopy. The experimental data are understood with the Anderson-Brinkman-Morel model of p-wave ele…
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This paper explores the potential for spin-triplet superconductivity in molecular beam epitaxy-grown IV-VI semiconductor superlattices. The findings present compelling evidence for spin-triplet pairing in PbTe/SnTe by the method of soft point-contact spectroscopy and spin-polarised point-contact spectroscopy. The experimental data are understood with the Anderson-Brinkman-Morel model of p-wave electron pairing. It is pointed out that emergent superconductivity can have its origin in topological flat bands obtained due to internal stresses of the sample similar to twisted layer graphene.
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Submitted 6 June, 2024;
originally announced June 2024.
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Wurtzite vs rock-salt MnSe epitaxy: electronic and altermagnetic properties
Authors:
Michał J. Grzybowski,
Carmine Autieri,
Jarosław Domagała,
Cezary Krasucki,
Anna Kaleta,
Sławomir Kret,
Katarzyna Gas,
Maciej Sawicki,
Rafał Bożek,
Jan Suffczyński,
Wojciech Pacuski
Abstract:
Newly discovered altermagnets are magnetic materials exhibiting both compensated magnetic order, similar to antiferromagnets, and simultaneous non-relativistic spin-splitting of the bands, akin to ferromagnets. This characteristic arises from the specific symmetry operations that connect the spin sublattices. In this report, we show with ab initio calculations that the semiconductive MnSe exhibits…
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Newly discovered altermagnets are magnetic materials exhibiting both compensated magnetic order, similar to antiferromagnets, and simultaneous non-relativistic spin-splitting of the bands, akin to ferromagnets. This characteristic arises from the specific symmetry operations that connect the spin sublattices. In this report, we show with ab initio calculations that the semiconductive MnSe exhibits altermagnetic spin-splitting in the wurtzite phase as well as a critical temperature well above room temperature. It is the first material from such space group identified to possess altermagnetic properties. Furthermore, we demonstrate experimentally through structural characterization techniques that it is possible to obtain thin films of both the intriguing wurtzite phase of MnSe and the more common rock-salt MnSe using molecular beam epitaxy on GaAs substrates. The choice of buffer layers plays a crucial role in determining the resulting phase and consequently extends the array of materials available for the physics of altermagnetism.
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Submitted 13 September, 2023; v1 submitted 12 September, 2023;
originally announced September 2023.
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Bi Incorporation and segregation in the MBE-grown GaAs-(Ga,Al)As-Ga(As,Bi) core-shell nanowires
Authors:
Janusz Sadowski,
Anna Kaleta,
Serhii Kryvyi,
Dorota Janaszko,
Bogusława Kurowska,
Marta Bilska,
Tomasz Wojciechowski,
Jarosław Z. Domagala,
Ana M. Sanchez,
Sławomir Kret
Abstract:
Incorporation of Bi into GaAs-(Ga,Al)As-Ga(As,Bi) core-shell nanowires grown by molecular beam epitaxy is studied with transmission electron microscopy. Nanowires are grown on GaAs(111)B substrates with Au-droplet assisted mode. Bi-doped shells are grown at low temperature (300 °C) with a close to stoichiometric Ga/As flux ratio. At low Bi fluxes, the Ga(As,Bi) shells are smooth, with Bi completel…
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Incorporation of Bi into GaAs-(Ga,Al)As-Ga(As,Bi) core-shell nanowires grown by molecular beam epitaxy is studied with transmission electron microscopy. Nanowires are grown on GaAs(111)B substrates with Au-droplet assisted mode. Bi-doped shells are grown at low temperature (300 °C) with a close to stoichiometric Ga/As flux ratio. At low Bi fluxes, the Ga(As,Bi) shells are smooth, with Bi completely incorporated into the shells. Higher Bi fluxes (Bi/As flux ratio ~ 4%) led to partial segregation of Bi as droplets on the nanowires sidewalls, preferentially located at the nanowire segments with wurtzite structure. We demonstrate that such Bi droplets on the sidewalls act as catalysts for the growth of branches perpendicular to the GaAs trunks. Due to the tunability between zinc-blende and wurtzite polytypes by changing the nanowire growth conditions, this effect enables fabrication of branched nanowire architectures with branches generated from selected (wurtzite) nanowire segments.
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Submitted 23 June, 2022;
originally announced June 2022.
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Near-infrared emission from spatially indirect excitons in type II ZnTe/CdSe/(Zn,Mg)Te core/double-shell nanowires
Authors:
Piotr Wojnar,
Jakub Plachta,
Anna Reszka,
Jonas Lahnemann,
Anna Kaleta,
Slawomir Kret,
Piotr Baranowski,
Maciej Wojcik,
Bogdan J. Kowalski,
Lech T. Baczewski,
Grzegorz Karczewski,
Tomasz Wojtowicz
Abstract:
ZnTe/CdSe/(Zn,Mg)Te core/double-shell nanowires are grown by molecular beam epitaxy by employing the vapor-liquid-solid growth mechanism assisted with gold catalysts. A photoluminescence study of these structures reveals the presence of an optical emission in the near infrared. We assign this emission to the spatially indirect exciton recombination at the ZnTe/CdSe type II interface. This conclusi…
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ZnTe/CdSe/(Zn,Mg)Te core/double-shell nanowires are grown by molecular beam epitaxy by employing the vapor-liquid-solid growth mechanism assisted with gold catalysts. A photoluminescence study of these structures reveals the presence of an optical emission in the near infrared. We assign this emission to the spatially indirect exciton recombination at the ZnTe/CdSe type II interface. This conclusion is confirmed by the observation of a significant blue-shift of the emission energy with an increasing excitation fluence induced by the electron-hole separation at the interface. Cathodoluminescence measurements reveal that the optical emission in the near infrared originates from nanowires and not from two dimensional residual deposits between them. Moreover, it is demonstrated that the emission energy in the near infrared depends on the average CdSe shell thickness and the average Mg concentration within the (Zn,Mg)Te shell. The main mechanism responsible for these changes is associated with the strain induced by the (Zn,Mg)Te shell in the entire core/shell nanowire heterostructure.
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Submitted 1 September, 2021;
originally announced September 2021.
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Enhanced ferromagnetism in cylindrically confined MnAs nanocrystals embedded in wurtzite GaAs nanowire shells
Authors:
Anna Kaleta,
Slawomir Kret,
Katarzyna Gas,
Boguslawa Kurowska,
Serhii B. Kryvyi,
Bogdan Rutkowski,
Nevill Gonzalez Szwacki,
Maciej Sawicki,
Janusz Sadowski
Abstract:
Nearly 30% increase of the ferromagnetic phase transition temperature has been achieved in strained MnAs nanocrystals embedded in a wurtzite GaAs matrix. Wurtzite GaAs exerts tensile stress on hexagonal MnAs nanocrystals, preventing a hexagonal to orthorhombic structural phase transition, which in the bulk MnAs is combined with the magnetic one. This effect results in a remarkable shift of the mag…
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Nearly 30% increase of the ferromagnetic phase transition temperature has been achieved in strained MnAs nanocrystals embedded in a wurtzite GaAs matrix. Wurtzite GaAs exerts tensile stress on hexagonal MnAs nanocrystals, preventing a hexagonal to orthorhombic structural phase transition, which in the bulk MnAs is combined with the magnetic one. This effect results in a remarkable shift of the magneto-structural phase transition temperature from 313 K in the bulk MnAs to above 400 K in the tensely strained MnAs nanocrystals. This finding is corroborated by the state of the art transmission electron microscopy, sensitive magnetometry and the first-principles calculations. The effect relies in defining a nanotube geometry of molecular beam epitaxy grown core-multishell wurtzite (Ga,In)As/(Ga,Al)As/(Ga,Mn)As/GaAs nanowires where the MnAs nanocrystals are formed during the thermal-treatment-induced phase separation of wurtzite (Ga,Mn)As into the GaAs:MnAs granular system. Such a unique combination of two types of hexagonal lattices provides possibility of attaining quasi-hydrostatic tensile strain in MnAs (impossible otherwise), leading to the substantial ferromagnetic phase transition temperature increase in this compound.
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Submitted 14 October, 2019;
originally announced October 2019.
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Defect-free SnTe topological crystalline insulator nanowires grown by molecular beam epitaxy on graphene
Authors:
J. Sadowski,
P. Dziawa,
A. Kaleta,
B. Kurowska,
A. Reszka,
T. Story,
S. Kret
Abstract:
SnTe topological crystalline insulator nanowires have been grown by molecular beam epitaxy on graphene/SiC substrates. The nanowires have cubic rock-salt structure, they grow along [001] crystallographic direction and have four sidewalls consisting of {100} crystal planes known to host metallic surface states with Dirac dispersion. Thorough high resolution transmission electron microscopy investig…
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SnTe topological crystalline insulator nanowires have been grown by molecular beam epitaxy on graphene/SiC substrates. The nanowires have cubic rock-salt structure, they grow along [001] crystallographic direction and have four sidewalls consisting of {100} crystal planes known to host metallic surface states with Dirac dispersion. Thorough high resolution transmission electron microscopy investigations show that the nanowires grow on graphene in the van der Walls epitaxy mode induced when the catalyzing Au nanoparticle mixes with Sn delivered from SnTe flux, providing liquid Au-Sn alloy. The nanowires are totally free from structural defects, but their {001} sidewalls are prone to oxidation, which points out on necessity of depositing protective capping in view of exploiting the magneto-electric transport phenomena involving charge carriers occupying topologically protected states.
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Submitted 20 December, 2018;
originally announced December 2018.
