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Site dependency of the magnetism for Mn adsorption on MgO/Ag(001): a combined DFT$+U$ and STM investigation
Authors:
Shruba Gangopadhyay,
Thaneshwor P. Kaloni,
Udo Udo Schwingenschlögl,
Barbara A. Jones
Abstract:
Theoretical and experimental investigation of the electronic and magnetic structure of transition metal atoms on an insulating interface with a metallic substrate at low temperatures is quite challenging. In this paper, we show a density functional theory plus Hubbard $U$ based protocol to study an Mn adatom on three symmetrically allowed absorption sites, namely on O, hollow (between two Mg and t…
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Theoretical and experimental investigation of the electronic and magnetic structure of transition metal atoms on an insulating interface with a metallic substrate at low temperatures is quite challenging. In this paper, we show a density functional theory plus Hubbard $U$ based protocol to study an Mn adatom on three symmetrically allowed absorption sites, namely on O, hollow (between two Mg and two O) and on Mg on MgO(001). We added a thick enough(bulk-like) metallic Ag slab beneath MgO for faithful replication of scanning tunneling microscopy (STM) experiments. Our study reveals that to determine the stable most binding site, we need to obtain a Hubbard $U$ value from the density functional theory(DFT) calculations, and our results show agreement with STM experiments. Our calculated Hubbard $U$ values for the three adatom sites are different. When Mn sits on O, it retains 2.4 $μ_B$ spin moment, close to its atomic spin moment. However, when Mn sits on other adatom sites, the spin moment decreases. Using the atom projected density of states, we find Mn on O atom shows very narrow crystal field splitting among \textit{d} orbitals, whereas on other adatom sites Mn \textit{d} orbitals show significant splitting. We calculate charge and spin densities and show vertical and horizontal propagation of charge and spin density varies widely between sites. Mn on Mg top shows an unusual feature, that Mn pushes Mg below, to make a coplanar of Mn geometry with the four oxygen atoms. In addition, we explained the reason for spin leaking down to the Ag layers. Mn on MgO/Ag does not show any spin-flip behavior in the STM, an unusual phenomenon, and we used our first principles-based approach to explain this unique observation.
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Submitted 14 February, 2020;
originally announced February 2020.
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From atomic layer to the bulk: low-temperature atomistic structure, ferroelectric and electronic properties of SnTe films
Authors:
Thaneshwor P. Kaloni,
Kai Chang,
Brandon J. Miller,
Qi-Kun Xue,
Xi Chen,
Shuai-Hua Ji,
Stuart S. P. Parkin,
Salvador Barraza-Lopez
Abstract:
SnTe hosts ferroelectricity that competes with its weak non-trivial band topology: in the high-symmetry rocksalt structure--in which its intrinsic electric dipole is quenched--this material develops metallic surface bands, but in its rhombic ground-state configuration--that hosts a non-zero spontaneous electric dipole--the crystalline symmetry is lowered and the presence of surface electronic band…
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SnTe hosts ferroelectricity that competes with its weak non-trivial band topology: in the high-symmetry rocksalt structure--in which its intrinsic electric dipole is quenched--this material develops metallic surface bands, but in its rhombic ground-state configuration--that hosts a non-zero spontaneous electric dipole--the crystalline symmetry is lowered and the presence of surface electronic bands is not guaranteed. Here, the type of ferroelectric coupling and the atomistic and electronic structure of SnTe films ranging from 2 to 40 ALs are examined on freestanding samples, to which atomic layers were gradually added. 4 AL SnTe films are antiferroelectrically-coupled, while thicker freestanding SnTe films are ferroelectrically-coupled. The electronic band gap reduces its magnitude in going from 2 ALs to 40 ALs but it does not close due to the rhombic nature of the structure. These results bridge the structure of SnTe films from the monolayer to the bulk.
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Submitted 2 April, 2019;
originally announced April 2019.
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Water splits to degrade two-dimensional group-IV monochalcogenides in nanoseconds
Authors:
Salvador Barraza-Lopez,
Thaneshwor P. Kaloni
Abstract:
The experimental exfoliation of layered group-IV monochalcogenides --semiconductors isostructural to black phosphorus-- using processes similar to those followed in the production of graphene or phosphorene has turned out unsuccessful thus far, as if the chemical degradation observed in black phosphorus was aggravated in these monochalcogenides. Here, we document a facile dissociation of water by…
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The experimental exfoliation of layered group-IV monochalcogenides --semiconductors isostructural to black phosphorus-- using processes similar to those followed in the production of graphene or phosphorene has turned out unsuccessful thus far, as if the chemical degradation observed in black phosphorus was aggravated in these monochalcogenides. Here, we document a facile dissociation of water by these materials within ten nanoseconds from room-temperature Car-Parrinello molecular dynamics calculations under standard temperature and pressure conditions. These results suggest that humidity must be fully eradicated to exfoliate monolayers successfully, for instance, by placing samples in a hydrophobic solution during mechanical exfoliation. From another materials perspective, these two-dimensional materials that create individual hydrogen ions out of water without illumination may become relevant for applications in hydrogen production and storage.
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Submitted 5 October, 2018;
originally announced October 2018.
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Tuning the ferro- to para-electric transition temperature and dipole orientation of group-IV monochalcogenide monolayers
Authors:
Salvador Barraza-Lopez,
Thaneshwor P. Kaloni,
Shiva P. Poudel,
Pradeep Kumar
Abstract:
Coordination-related, two-dimensional (2D) structural phase transitions are a fascinating and novel facet of two-dimensional materials with structural degeneracies. Nevertheless, a unified theoretical account of these transitions remains absent, and the following points are established through {\em ab-initio} molecular dynamics and 2D discrete clock models here: Group-IV monochalcogenide (GeSe, Sn…
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Coordination-related, two-dimensional (2D) structural phase transitions are a fascinating and novel facet of two-dimensional materials with structural degeneracies. Nevertheless, a unified theoretical account of these transitions remains absent, and the following points are established through {\em ab-initio} molecular dynamics and 2D discrete clock models here: Group-IV monochalcogenide (GeSe, SnSe, SnTe, ...) monolayers have four degenerate structural ground states, and a 2D phase transition from a three-fold coordinated onto a five-fold coordinated structure takes place at finite temperature. On unstrained samples, the 2D phase transition requires lattice parameters to freely evolve. A fundamental energy scale permits understanding this transition. The transition temperature $T_c$ and the orientation of the in-plane intrinsic electric dipole can be controlled by moderate uniaxial tensile strain, and a modified discrete clock model describes the transition on strained samples. These results establish a general underlying theoretical background to understand structural phase transitions in 2D materials and their effects on material properties.
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Submitted 13 September, 2017;
originally announced September 2017.
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Exfoliation energy, quasi-particle bandstructure, and excitonic properties of selenium and tellurium atomic chains
Authors:
Eesha Andharia,
Thaneshwor P. Kaloni,
Gregory J. Salamo,
Shui-Qing Yu,
Hugh O. H. Churchill,
Salvador Barraza-Lopez
Abstract:
Effects that are not captured by the generalized-gradient density-functional theory play a prominent effect on the structural binding, and on the electronic and optical properties of reduced-dimensional and weakly-bound materials. Here, we report the exfoliation energy of selenium and tellurium atomic chains with non-empirical van der Waals corrections, and their electronic and optical properties…
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Effects that are not captured by the generalized-gradient density-functional theory play a prominent effect on the structural binding, and on the electronic and optical properties of reduced-dimensional and weakly-bound materials. Here, we report the exfoliation energy of selenium and tellurium atomic chains with non-empirical van der Waals corrections, and their electronic and optical properties with the GW and Bethe-Salpeter formalisms. The exfoliation energy is found to be within 0.547 to 0.719 eV/u.c. for the selenium atomic chain, and 0.737 to 0.926 eV/u.c. for the tellurium atomic chain (u.c. stands for unit cell), depending on the approximation for the van der Waals interaction and the numerical tool chosen. The GW electronic bandgap turned out to be 5.22--5.47 (4.44--4.59) eV for the Se (Te) atomic chains, with the lowest bound obtained with the Godby-Needs (GB), and the upper bound to the Hybertsen-Louie (HL) plasmon-pole models (PPMs). The binding energy of the ground-state excitonic state ranges between 2.69 to 2.72 eV for selenium chains within the HL and GB PPM, respectively, and turned out to be 2.35 eV for tellurium chains with both approximations. The ground state excitonic wave function is localized within 50 Å along the axis for both types of atomic chains, and its energy lies within the visible spectrum: blue [2.50(GN)--2.78(HL) eV] for selenium, and yellow--green [2.09(GN)--2.28(HL) eV] for tellurium, which could be useful for LED applications in the visible spectrum.
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Submitted 3 July, 2018; v1 submitted 13 September, 2017;
originally announced September 2017.
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Topological phase in oxidized zigzag stanene nanoribbons
Authors:
M. Modarresi,
W. B. Kuang,
T. P. Kaloni,
M. R. Roknabadi,
G. Schreckenbach
Abstract:
First-principles and semi-empirical tight binding calculations were performed to understand the adsorption of oxygen on the surface of two dimensional (2D) and zigzag stanene nano-ribbons. The intrinsic spin-orbit interaction is considered in the Kane-Mele tight binding model. The adsorption of an oxygen atom or molecule on the 2D stanene opens an electronic energy band gap. We investigate the hel…
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First-principles and semi-empirical tight binding calculations were performed to understand the adsorption of oxygen on the surface of two dimensional (2D) and zigzag stanene nano-ribbons. The intrinsic spin-orbit interaction is considered in the Kane-Mele tight binding model. The adsorption of an oxygen atom or molecule on the 2D stanene opens an electronic energy band gap. We investigate the helical edge states and topological phase in the pure zigzag stanene nano-ribbons. The adsorption of oxygen atoms on the zigzag stanene nano-ribbons deforms the helical edge states at the Fermi level which causes topological (non-trivial) to trivial phase transition. The structural stability of the systems is checked by performing $Γ$-point phonon calculations. The adsorption of an oxygen atom or molecule on the 2D staneneSpecific arrangements of adsorbed oxygen atoms on the surface of zigzag stanene nano-ribbons conserve the topological phase which has potential applications in future nano-electronic devices.
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Submitted 26 October, 2016;
originally announced October 2016.
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Band gap modulation in polythiophene and polypyrrole-based systems
Authors:
T. P. Kaloni,
G. Schreckenbach,
M. S. Freund
Abstract:
In this paper, the structural and electronic properties of polythiophene and polyprrrole-based systems have been investigated using first-principles calculations both in periodic and oligomer forms. Of particular interest is the band gap modulation through substitutions and bilayer formation. Specifically, S has been substituted by Se and Te in polythiophene, leading to polyseleophene and polytell…
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In this paper, the structural and electronic properties of polythiophene and polyprrrole-based systems have been investigated using first-principles calculations both in periodic and oligomer forms. Of particular interest is the band gap modulation through substitutions and bilayer formation. Specifically, S has been substituted by Se and Te in polythiophene, leading to polyseleophene and polytellurophene, respectively, and N has been substituted by P and As in polypyrrole. The values obtained of the binding energy suggest that all the systems studied can be realized experimentally. Stacking (bilayer formation) of pure polythiophene, polypyrrole and their derivatives leads to linear suppression of the band gap or HOMO-LUMO gap as a function of the stacking. Mixed bilayers, including one formed from polythiophene on top of polypyrrole, have also been considered. Overall, a wide range of band gaps can be achieved through substitutions and stacking. Hybrid (B3LYP) calculations also suggest the same trend in the band gap as PBE calculations. Trends in the binding energy are similar for both periodic and molecular calculations. In addition, the $Γ$-point phonon calculation are performed in order to check the stability of selected systems.
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Submitted 26 October, 2016;
originally announced October 2016.
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Materials properties of out-of-plane heterostructures of MoS$_2$-WSe$_2$ and WS$_2$-MoSe$_2$
Authors:
Bin Amin,
Thaneshwor P. Kaloni,
Georg Schreckenbach,
Michael S. Freund
Abstract:
Based on first-principles calculations, the materials properties (structural, electronic, vibrational, and optical properties) of out-of-plane heterostructures formed from the transiti on metal dichalcogenides, specifically MoS$_2$-WSe$_2$ and WS$_2$-MoSe$_2$ were investigated. The heterostructures of MoS$_2$-WSe$_2$ and WS$_2$-MoSe$_2$ are found to be direct and ind irect band gap semiconductors,…
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Based on first-principles calculations, the materials properties (structural, electronic, vibrational, and optical properties) of out-of-plane heterostructures formed from the transiti on metal dichalcogenides, specifically MoS$_2$-WSe$_2$ and WS$_2$-MoSe$_2$ were investigated. The heterostructures of MoS$_2$-WSe$_2$ and WS$_2$-MoSe$_2$ are found to be direct and ind irect band gap semiconductors, respectively. However, a direct band gap in the WS$_2$-MoSe$_2$ heterostructure can be achieved by applying compressive strain. Furthermore, the excitoni c peaks in both monolayer and bilayer heterostructures are calculated to understand the optical behavior of these systems. The suppression of the optical spectrum with respect to the c orresponding monolayers is due to interlayer charge transfer. The stability of the systems under study is confirmed by performing phonon spectrum calculations.
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Submitted 29 January, 2016;
originally announced February 2016.
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Current developments in silicene and germanene
Authors:
T. P. Kaloni,
G. Schreckenbach,
M. S. Freund,
U. Schwingenschlögl
Abstract:
Exploration of the unusual properties of the two-dimensional materials silicene and germanene is a very active research field in recent years. This article therefore reviews the latest developments, focusing both on the fundamental materials properties and on possible applications.
Exploration of the unusual properties of the two-dimensional materials silicene and germanene is a very active research field in recent years. This article therefore reviews the latest developments, focusing both on the fundamental materials properties and on possible applications.
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Submitted 19 December, 2015;
originally announced December 2015.
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Electrically Engineered Band Gap in Two-Dimensional Ge, Sn, and Pb: A First-Principles and Tight-Binding Approach
Authors:
Thaneshwor P. Kaloni,
Mohsen Modarresi,
Muhammad Tahir,
Mahmood Rezaee Roknabadi,
Georg Schreckenbach,
Michael S. Freund
Abstract:
First-principles calculations were performed to investigate the electronic structure of two-dimensional (2-D) Ge, Sn, and Pb without and with the presence of an external electric field in combination with spin-orbit coupling. Tight-binding calculations based on four orbitals per atom and an effective single orbital are presented to match with the results obtained from first-principles calculations…
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First-principles calculations were performed to investigate the electronic structure of two-dimensional (2-D) Ge, Sn, and Pb without and with the presence of an external electric field in combination with spin-orbit coupling. Tight-binding calculations based on four orbitals per atom and an effective single orbital are presented to match with the results obtained from first-principles calculations. In particular, the electronic band structure and the band splitting are investigated with both models. Moreover, the simple $k\cdot p$ model is also considered in order to understand the band splitting in the presence of an external electric field and spin-orbit coupling. A large splitting is obtained, which is expected to be useful for spintronic devices. The fair agreement between the first-principle, $k\cdot p$ model, and tight-binding approaches leads to a table of parameters for future tight-binding studies on hexagonal 2-D nanostructures. By using the tight binding parameters, the transport properties of typical 0-D triangular quantum dots between two semi-infinite electrodes in the presence of spin-orbit coupling are addressed.
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Submitted 17 April, 2015;
originally announced April 2015.
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The Structural and Electronic Properties of Pristine and Doped Polythiophene: Periodic Versus Molecular Calculations
Authors:
T. P. Kaloni,
G. Schreckenbach,
M. S. Freund
Abstract:
Based on density functional theory calculations, the structural and electronic properties of polythiophene in periodic and oligomer forms have been investigated. In particular, the effects of Li or Cl adsorption onto a monolayer and Li or Cl-intercalation into bulk or bilayer polythiophene are addressed using periodic calculations. The binding energy of Li or Cl adsorbed bulk or bilayer polythioph…
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Based on density functional theory calculations, the structural and electronic properties of polythiophene in periodic and oligomer forms have been investigated. In particular, the effects of Li or Cl adsorption onto a monolayer and Li or Cl-intercalation into bulk or bilayer polythiophene are addressed using periodic calculations. The binding energy of Li or Cl adsorbed bulk or bilayer polythiophene is significantly larger than for the monolayer. The trends in the binding energy as a function of adsorbent remain the same for both the periodic and molecular cases. The band gap or HOMO-LUMO gap and charge transfer are analysed. In addition, for the bulk or bilayer, different kinds of stacking have been considered. It is found that the parallel bulk or bilayer structure is energetically favorable compared to flipping the second layer by 180$^\circ$. This has been considered for both the periodic and oligomer forms. Moreover, for Li adsorption, polarons are found to be more stable than bipolarons, while the situation is opposite for Cl adsorption. The detailed analysis of the present study will be useful for understanding the structural properties and the tuneability of the electronic states, which is an important step to construct polythiophene based electronic devices.
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Submitted 16 January, 2015;
originally announced January 2015.
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Quantum spin Hall states in graphene interacting with WS$_2$ or WSe$_2$
Authors:
T. P. Kaloni,
L. Kou,
T. Frauenheim,
U. Schwingenschlögl
Abstract:
In the framework of first-principles calculations, we investigate the structural and electronic properties of graphene in contact with as well as sandwiched between WS$_2$ and WSe$_2$ monolayers. We report the modification of the band characteristics due to the interaction at the interface and demonstrate that the presence of the dichalcogenides results in quantum spin Hall states in the absence o…
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In the framework of first-principles calculations, we investigate the structural and electronic properties of graphene in contact with as well as sandwiched between WS$_2$ and WSe$_2$ monolayers. We report the modification of the band characteristics due to the interaction at the interface and demonstrate that the presence of the dichalcogenides results in quantum spin Hall states in the absence of a magnetic field.
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Submitted 1 December, 2014;
originally announced December 2014.
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Tuning the Structural, Electronic, and Magnetic Properties of Germanene by the Adsorption of 3$d$ Transition Metal Atoms
Authors:
T. P. Kaloni
Abstract:
The structural, electronic, and magnetic properties of 3$d$ transition metal (TM) atoms (Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, and Zn) adsorbed germanene are addressed using density functional theory. Based on the adsorption energy, TM atoms prefer to occupy at the hollow site for all the cases. The obtained values of the total magnetic moment vary from 0.97 $μ_B$ to 4.95 $μ_B$ in case of Sc to Mn-ad…
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The structural, electronic, and magnetic properties of 3$d$ transition metal (TM) atoms (Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, and Zn) adsorbed germanene are addressed using density functional theory. Based on the adsorption energy, TM atoms prefer to occupy at the hollow site for all the cases. The obtained values of the total magnetic moment vary from 0.97 $μ_B$ to 4.95 $μ_B$ in case of Sc to Mn-adsorption, respectively. A gap of 74 meV with a strongly enhanced splitting of 67 meV is obtained in case of Sc-adsorption, whereas metallic states are obtained in case of Ti, Cr, Mn, Fe, and Co. Non-magnetic states are realized for Ni, Cu, and Zn-adsorption. Moreover, semiconducting nature is obtained for non-magnetic cases with a gap of 26 to 28 meV. Importantly, it is found that V-adsorbed germanene can host the quantum anomalous Hall effect. The obtained results demonstrate that TM atoms and nearest neighbour Ge atoms are ferro-magnetically ordered in the cases of V, Mn, Fe, Co, Ni, Cu, and Zn, while anti-ferromagnetic ordering is obtained for Sc, Ti, and Cr. In addition, the effects of the coverage of all TM atoms on the electronic structure and the ferro-magnetic and anti-ferro-magnetic coupling in case of Mn are examined. The results could help to understand the effect of TM atoms in a new class of two-dimensional materials beyond graphene and silicene.
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Submitted 1 October, 2014;
originally announced October 2014.
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Large Enhancement and Tunable Band Gap in Silicene by Small Organic Molecule Adsorption
Authors:
Thaneshwor P. Kaloni,
Georg Schreckenbach,
Michael S. Freund
Abstract:
Adsorption of eight organic molecules (acetone, acetonitrile, ammonia, benzene, methane, methanol, ethanol, and toluene) onto silicene has been investigated using van der Waals density functional theory calculations (DFT-D). The calculated values of the adsorption energies vary from $-0.11$ eV to $-0.95$ eV. Quantitatively, these values are higher than the corresponding adsorption energies of the…
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Adsorption of eight organic molecules (acetone, acetonitrile, ammonia, benzene, methane, methanol, ethanol, and toluene) onto silicene has been investigated using van der Waals density functional theory calculations (DFT-D). The calculated values of the adsorption energies vary from $-0.11$ eV to $-0.95$ eV. Quantitatively, these values are higher than the corresponding adsorption energies of the molecules adsorbed on graphene. In addition, electronic structure calculations have been performed. The obtained values of the band gap range from 0.006 eV to 0.35 eV for acetonitrile to acetone, respectively. Furthermore, the effective mass of the electron is estimated and found to be comparatively small, which is expected to result in high electron mobility. In addition, we study the effect of Li atoms doped in pristine and acetone adsorbed silicene. In particular, we focus on the variation of the adsorption energy with respect to the number of Li atoms in the systems. Our results suggest new approaches for the use of silicene molecular-based energy storage and conversion as well as electronic devices.
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Submitted 19 September, 2014; v1 submitted 18 September, 2014;
originally announced September 2014.
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Band gap tunning in BN-doped graphene systems with high carrier mobility
Authors:
T. P. Kaloni,
R. P. Joshi,
N. P. Adhikari,
U. Schwingenschlögl
Abstract:
Using density functional theory, we present a comparative study of the electronic properties of BN-doped graphene monolayer, bilayer, trilayer, and multilayer systems. In addition, we address a superlattice of pristine and BN-doped graphene. Five doping concentrations between 12.5% and 75% are considered, for which we obtain band gaps from 0.02 eV to 2.43 eV. We show that the effective mass varies…
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Using density functional theory, we present a comparative study of the electronic properties of BN-doped graphene monolayer, bilayer, trilayer, and multilayer systems. In addition, we address a superlattice of pristine and BN-doped graphene. Five doping concentrations between 12.5% and 75% are considered, for which we obtain band gaps from 0.02 eV to 2.43 eV. We show that the effective mass varies between 0.007 and 0.209 free electron masses, resembling a high mobility of the charge carriers.
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Submitted 23 February, 2014; v1 submitted 1 February, 2014;
originally announced February 2014.
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Prediction of a quantum anomalous Hall state in Co decorated silicene
Authors:
T. P. Kaloni,
N. Singh,
U. Schwingenschlögl
Abstract:
Based on first-principles calculations, we demonstrate that Co decorated silicene can host a quantum anomalous Hall state. The exchange field induced by the Co atoms combined with the strong spin orbit coupling of the silicene opens a nontrivial band gap at the K-point. As compared to other transition metals, Co decorated silicene is unique in this respect, since usually hybridization and spin-pol…
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Based on first-principles calculations, we demonstrate that Co decorated silicene can host a quantum anomalous Hall state. The exchange field induced by the Co atoms combined with the strong spin orbit coupling of the silicene opens a nontrivial band gap at the K-point. As compared to other transition metals, Co decorated silicene is unique in this respect, since usually hybridization and spin-polarization induced in the silicene suppress a quantum anomalous Hall state.
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Submitted 9 January, 2014; v1 submitted 26 December, 2013;
originally announced December 2013.
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Substrate enhanced superconductivity in Li-decorated graphene
Authors:
T. P. Kaloni,
A. V. Balatsky,
U. Schwingenschlögl
Abstract:
We investigate the role of the substrate for the strength of the electon phonon coupling in Li-decorated graphene. We find that the interaction with a $h$-BN substrate leads to a significant enhancement from $λ_0=0.62$ to $λ_1=0.67$, which corresponds to a $25\%$ increase of the transition temperature from $T_{c0}=10.33$ K to $T_{c1}=12.98$ K. The superconducting gaps amount to 1.56 meV (suspended…
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We investigate the role of the substrate for the strength of the electon phonon coupling in Li-decorated graphene. We find that the interaction with a $h$-BN substrate leads to a significant enhancement from $λ_0=0.62$ to $λ_1=0.67$, which corresponds to a $25\%$ increase of the transition temperature from $T_{c0}=10.33$ K to $T_{c1}=12.98$ K. The superconducting gaps amount to 1.56 meV (suspended) and 1.98 meV (supported). These findings open up a new route to enhanced superconducting transition temperatures in graphene-based materials by substrate engineering.
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Submitted 16 December, 2013; v1 submitted 7 December, 2013;
originally announced December 2013.
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Modelling magnetism of C at O and B monovacancies in graphene
Authors:
T. P. Kaloni,
M. Upadhyay Kahaly,
R. Faccio,
U. Schwingenschlögl
Abstract:
The presence of defects can introduce important changes in the electronic structure of graphene, leading to phenomena such as C magnetism. In addition, vacancies are reactive and permit the incorporation of dopants. This paper discusses the electronic properties of defective graphene for O and B decoration. Phonon calculations allow us to address directly the stability of the systems under study.…
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The presence of defects can introduce important changes in the electronic structure of graphene, leading to phenomena such as C magnetism. In addition, vacancies are reactive and permit the incorporation of dopants. This paper discusses the electronic properties of defective graphene for O and B decoration. Phonon calculations allow us to address directly the stability of the systems under study. We show that it is possible to obtain magnetic solutions with and without dangling bonds, demonstrating that C magnetism can be achieved in the presence of B and O.
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Submitted 13 November, 2013;
originally announced November 2013.
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Stability of germanene under tensile strain
Authors:
T. P. Kaloni,
U. Schwingenschlögl
Abstract:
The stability of germanene under biaxial tensile strain and the accompanying modifications of the electronic properties are studied by density functional theory. The phonon spectrum shows that up to $16\%$ strain the germanene lattice is stable, where the Dirac cone shifts towards higher energy and hole-doped Dirac states are achieved. The latter is due to weakening of the Ge-Ge bonds and reductio…
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The stability of germanene under biaxial tensile strain and the accompanying modifications of the electronic properties are studied by density functional theory. The phonon spectrum shows that up to $16\%$ strain the germanene lattice is stable, where the Dirac cone shifts towards higher energy and hole-doped Dirac states are achieved. The latter is due to weakening of the Ge-Ge bonds and reduction of the s-p hybridization. Our calculated Grüneisen parameter shows a similar dependence on the strain as reported for silicene (which is different from that of graphene).
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Submitted 12 November, 2013;
originally announced November 2013.
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A first principles investigated optical spectra of oxizided graphene
Authors:
N. Singh,
T. P. Kaloni,
Udo Schwingenschlögl
Abstract:
The electronic and optical properties of mono, di, tri, and tetravacancies in graphene are studied in comparison to each other, using density functional theory. In addition, oxidized monovacancies are considered for different oxygen concentrations. Pristine graphene is found to be more absorptive than any defect configuration at low energy. We demonstrate characteristic differences in the optical…
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The electronic and optical properties of mono, di, tri, and tetravacancies in graphene are studied in comparison to each other, using density functional theory. In addition, oxidized monovacancies are considered for different oxygen concentrations. Pristine graphene is found to be more absorptive than any defect configuration at low energy. We demonstrate characteristic differences in the optical spectra of the various defects for energies up to 3 eV. This makes it possible to quantify by optical spectroscopy the ratios of the defect species present in a sample.
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Submitted 9 November, 2013;
originally announced November 2013.
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Electronic properties of Mn decorated silicene on hexagonal boron nitride
Authors:
T. P. Kaloni,
S. Gangopadhyay,
N. Singh,
B. Jones,
U. Schwingenschlögl
Abstract:
We study silicene on hexagonal boron nitride, using first principles calculations. Since hexagonal boron nitride is semiconducting, the interaction with silicene is weaker than for metallic substrates. It therefore is possible to open a 50 meV band gap in the silicene. We further address the effect of Mn decoration by determining the onsite Hubbard interaction parameter, which turns out to differ…
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We study silicene on hexagonal boron nitride, using first principles calculations. Since hexagonal boron nitride is semiconducting, the interaction with silicene is weaker than for metallic substrates. It therefore is possible to open a 50 meV band gap in the silicene. We further address the effect of Mn decoration by determining the onsite Hubbard interaction parameter, which turns out to differ significantly for decoration at the top and hollow sites. The induced magnetism in the system is analyzed in detail.
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Submitted 18 December, 2013; v1 submitted 5 November, 2013;
originally announced November 2013.
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Quasi free-standing silicene in a superlattice with hexagonal boron nitride
Authors:
T. P. Kaloni,
M. Tahir,
U. Schwingenschlögl
Abstract:
We study a superlattice of silicene and hexagonal boron nitride by first principles calculations and demonstrate that the interaction between the layers of the superlattice is very small. As a consequence, quasi free-standing silicene is realized in this superlattice. In particular, the Dirac cone of silicene is preserved, which has not been possible in any other system so far. Due to the wide ban…
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We study a superlattice of silicene and hexagonal boron nitride by first principles calculations and demonstrate that the interaction between the layers of the superlattice is very small. As a consequence, quasi free-standing silicene is realized in this superlattice. In particular, the Dirac cone of silicene is preserved, which has not been possible in any other system so far. Due to the wide band gap of hexagonal boron nitride, the superlattice realizes the characteristic physical phenomena of free-standing silicene. In particular, we address by model calculations the combined effect of the intrinsic spin-orbit coupling and an external electric field, which induces a transition from a metal to a topological insulator and further to a band insulator.
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Submitted 29 October, 2013;
originally announced October 2013.
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Weak interaction between germanene and GaAs(0001) by H intercalation: A route to exfoliation
Authors:
T. P. Kaloni,
U. Schwingenschlögl
Abstract:
The epitaxial growth of germanene on semiconducting GaAs(0001) substrate is studied using $ab$-$initio$ calculations. The interaction of the germanene is found to be minimum with the substrate. Our obtained results strongly indicate that it is possible to take off germanene from the substrate to make it free standing. We demonstrate a methods to achieve this aim. We also address the electronic str…
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The epitaxial growth of germanene on semiconducting GaAs(0001) substrate is studied using $ab$-$initio$ calculations. The interaction of the germanene is found to be minimum with the substrate. Our obtained results strongly indicate that it is possible to take off germanene from the substrate to make it free standing. We demonstrate a methods to achieve this aim. We also address the electronic structure of germanene on GaAs(0001) substrate and found to be the Dirac cone shift above the Fermi level with the spltting of 160 meV. Forthermore, we calculate the band structure of the free standing germanene with and without substrate and found band gap of 24 meV due to the intrinsic spin orbit coupling.
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Submitted 7 October, 2014; v1 submitted 29 October, 2013;
originally announced October 2013.
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Hole doped Dirac states in silicene by biaxial tensile strain
Authors:
T. P. Kaloni,
Y. C. Cheng,
U. Schwingenschlögl
Abstract:
The effects of biaxial tensile strain on the structure, electronic states, and mechanical properties of silicene are studied by ab-initio calculations. Our results show that up to 5% strain the Dirac cone remains essentially at the Fermi level, while higher strain induces hole doping because of weakening of the Si$-$Si bonds. We demonstrate that the silicene lattice is stable up to 17% strain. It…
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The effects of biaxial tensile strain on the structure, electronic states, and mechanical properties of silicene are studied by ab-initio calculations. Our results show that up to 5% strain the Dirac cone remains essentially at the Fermi level, while higher strain induces hole doping because of weakening of the Si$-$Si bonds. We demonstrate that the silicene lattice is stable up to 17% strain. It is noted that the buckling first decreases with the strain (up to 10%) and then increases again, which is accompanied by a band gap variation. We also calculate the Grüneisen parameter and demonstrate a strain dependence similar to that of graphene.
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Submitted 11 November, 2013; v1 submitted 28 October, 2013;
originally announced October 2013.
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Induced magnetism in transition metal intercalated graphitic systems
Authors:
T. P. Kaloni,
M. Upadhyay Kahaly,
U. Schwingenschlögl
Abstract:
We investigate the structure, chemical bonding, electronic properties, and magnetic behavior of a three-dimensional graphitic network in aba and aaa stacking with intercalated transition metal atoms (Mn, Fe, Co, Ni, and Cu). Using density functional theory, we find induced spin-polarization of the C atoms both when the graphene sheets are aba stacked (forming graphite) and aaa stacked (resembling…
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We investigate the structure, chemical bonding, electronic properties, and magnetic behavior of a three-dimensional graphitic network in aba and aaa stacking with intercalated transition metal atoms (Mn, Fe, Co, Ni, and Cu). Using density functional theory, we find induced spin-polarization of the C atoms both when the graphene sheets are aba stacked (forming graphite) and aaa stacked (resembling bi-layer graphene). The magnetic moment induced by Mn, Fe, and Co turns out to vary from 1.38 μB to 4.10 μB, whereas intercalation of Ni and Cu does not lead to a magnetic state. The selective induction of spin-polarization can be utilized in spintronic and nanoelectronic applications.
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Submitted 25 June, 2012;
originally announced June 2012.
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Electronic Properties of Boron and Nitrogen doped graphene: A first principles study
Authors:
Sugata Mukherjee,
T. P. Kaloni
Abstract:
Effect of doping of graphene either by Boron (B), Nitrogen (N) or co-doped by B and N is studied using density functional theory. Our extensive band structure and density of states calculations indicate that upon doping by N (electron doping), the Dirac point in the graphene band structure shifts below the Fermi level and an energy gap appears at the high symmetric K-point. On the other hand, by B…
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Effect of doping of graphene either by Boron (B), Nitrogen (N) or co-doped by B and N is studied using density functional theory. Our extensive band structure and density of states calculations indicate that upon doping by N (electron doping), the Dirac point in the graphene band structure shifts below the Fermi level and an energy gap appears at the high symmetric K-point. On the other hand, by B (hole doping), the Dirac point shifts above the Fermi level and a gap appears. Upon co-doping of graphene by B and N, the energy gap between valence and conduction bands appears at Fermi level and the system behaves as narrow gap semiconductor. Obtained results are found to be in well agreement with available experimental findings.
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Submitted 25 June, 2012;
originally announced June 2012.
