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Voltage Fluctuations in ac Biased Superconducting Transition-Edge Sensors
Authors:
L. Gottardi,
M. de Wit,
E. Taralli,
K. Nagayashi,
A. Kozorezov
Abstract:
We present a detailed analysis of the fundamental noise sources in superconducting transition-edge sensors (TESs), ac voltage biased at MHz frequencies and treated as superconducting weak links. We have studied the noise in the resistive transition as a function of bath temperature of several detectors with different normal resistances and geometries. We show that the excess noise, typically obser…
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We present a detailed analysis of the fundamental noise sources in superconducting transition-edge sensors (TESs), ac voltage biased at MHz frequencies and treated as superconducting weak links. We have studied the noise in the resistive transition as a function of bath temperature of several detectors with different normal resistances and geometries. We show that the excess noise, typically observed in the TES electrical bandwidth, can be explained by the equilibrium Johnson noise of the quasiparticles generated within the weak link. The fluctuations at the Josephson frequency and higher harmonics contribute significantly to the measured voltage noise at the detector bandwidth through the nonlinear response of the weak link with a sinusoidal current-phase relation.
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Submitted 13 October, 2022;
originally announced October 2022.
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Self-Heating Hotspots in Superconducting Nanowires Cooled by Phonon Black-Body Radiation
Authors:
Andrew Dane,
Jason Allmaras,
Di Zhu,
Murat Onen,
Marco Colangelo,
Reza Bahgdadi,
Jean-Luc Tambasco,
Yukimi Morimoto,
Ignacio Estay Forno,
Ilya Charaev,
Qingyuan Zhao,
Mikhail Skvortsov,
Alexander Kozorezov,
Karl Berggren
Abstract:
Controlling thermal transport is important for a range of devices and technologies, from phase change memories to next-generation electronics. This is especially true in nano-scale devices where thermal transport is altered by the influence of surfaces and changes in dimensionality. In superconducting nanowire single-photon detectors, the thermal boundary conductance (TBC) between the nanowire and…
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Controlling thermal transport is important for a range of devices and technologies, from phase change memories to next-generation electronics. This is especially true in nano-scale devices where thermal transport is altered by the influence of surfaces and changes in dimensionality. In superconducting nanowire single-photon detectors, the thermal boundary conductance (TBC) between the nanowire and the substrate it is fabricated on influences most of the performance metrics that make these detectors attractive for applications. This includes the maximum count rate, latency, jitter, and quantum efficiency. Despite its importance, the study of TBC in superconducting nanowire devices has not been done systematically, primarily due to the lack of a straightforward characterization method. Here, we show that simple electrical measurements can be used to estimate the TBC between nanowires and substrates and that these measurements match acoustic mismatch theory across a variety of substrates. Numerical simulations allow us to refine our understanding, however, open questions remain. This work should enable thermal engineering in superconducting nanowire electronics and cryogenic detectors for improved device performance.
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Submitted 9 April, 2021;
originally announced April 2021.
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Determining the depairing current in superconducting nanowire single-photon detectors
Authors:
S. Frasca,
B. Korzh,
M. Colangelo,
D. Zhu,
A. E. Lita,
J. P. Allmaras,
E. E. Wollman,
V. B. Verma,
A. E. Dane,
E. Ramirez,
A. D. Beyer,
S. W. Nam,
A. G. Kozorezov,
M. D. Shaw,
K. K. Berggren
Abstract:
We estimate the depairing current of superconducting nanowire single photon detectors (SNSPDs) by studying the dependence of the nanowires kinetic inductance on their bias current. The kinetic inductance is determined by measuring the resonance frequency of resonator style nanowire coplanar waveguides both in transmission and reflection configurations. Bias current dependent shifts in the measured…
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We estimate the depairing current of superconducting nanowire single photon detectors (SNSPDs) by studying the dependence of the nanowires kinetic inductance on their bias current. The kinetic inductance is determined by measuring the resonance frequency of resonator style nanowire coplanar waveguides both in transmission and reflection configurations. Bias current dependent shifts in the measured resonant frequency correspond to the change in the kinetic inductance, which can be compared with theoretical predictions. We demonstrate that the fast relaxation model described in the literature accurately matches our experimental data and provides a valuable tool for direct determination of the depairing current. Accurate and direct measurement of the depairing current is critical for nanowire quality analysis, as well as modeling efforts aimed at understanding the detection mechanism in SNSPDs.
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Submitted 18 April, 2019;
originally announced April 2019.
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An ultrahigh-impedance superconducting thermal switch for interfacing superconductors to semiconductors and optoelectronics
Authors:
A. N. McCaughan,
V. B. Verma,
S. Buckley,
J. P. Allmaras,
A. G. Kozorezov,
A. N. Tait,
S. W. Nam,
J. M. Shainline
Abstract:
A number of current approaches to quantum and neuromorphic computing use superconductors as the basis of their platform or as a measurement component, and will need to operate at cryogenic temperatures. Semiconductor systems are typically proposed as a top-level control in these architectures, with low-temperature passive components and intermediary superconducting electronics acting as the direct…
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A number of current approaches to quantum and neuromorphic computing use superconductors as the basis of their platform or as a measurement component, and will need to operate at cryogenic temperatures. Semiconductor systems are typically proposed as a top-level control in these architectures, with low-temperature passive components and intermediary superconducting electronics acting as the direct interface to the lowest-temperature stages. The architectures, therefore, require a low-power superconductor-semiconductor interface, which is not currently available. Here we report a superconducting switch that is capable of translating low-voltage superconducting inputs directly into semiconductor-compatible (above 1,000 mV) outputs at kelvin-scale temperatures (1 K or 4 K). To illustrate the capabilities in interfacing superconductors and semiconductors, we use it to drive a light-emitting diode (LED) in a photonic integrated circuit, generating photons at 1 K from a low-voltage input and detecting them with an on-chip superconducting single-photon detector. We also characterize our device's timing response (less than 300 ps turn-on, 15 ns turn-off), output impedance (greater than 1 MΩ), and energy requirements (0.18 fJ/um^2, 3.24 mV/nW).
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Submitted 30 September, 2019; v1 submitted 25 March, 2019;
originally announced March 2019.
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Fano fluctuations in superconducting nanowire single-photon detectors
Authors:
A. G. Kozorezov,
C. Lambert,
F. Marsili,
M. J. Stevens,
V. B. Verma,
J. P. Allmaras,
M. D. Shaw,
R. P. Mirin,
Sae Woo Nam
Abstract:
Because of their universal nature, Fano fluctuations are expected to influence the response of superconducting nanowire single-photon detectors (SNSPDs). We predict that photon counting rate ($PCR$) as a function of bias current ($I_B$) in SNSPDs is described by an integral over a transverse coordinate-dependent complementary error function. The latter describes smearing of local responses due to…
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Because of their universal nature, Fano fluctuations are expected to influence the response of superconducting nanowire single-photon detectors (SNSPDs). We predict that photon counting rate ($PCR$) as a function of bias current ($I_B$) in SNSPDs is described by an integral over a transverse coordinate-dependent complementary error function. The latter describes smearing of local responses due to Fano fluctuations of the amount of energy deposited into electronic system. The finite width, $σ$, of the $PCR$ vs $I_B$ arises from fluctuations in the energy partition between quasiparticles and phonons during the energy down-conversion cascade. In narrow-nanowire SNSPDs the local responses are uniform, and the effect of Fano-fluctuations on $σ$ is dominant. In wide-nanowire SNSPDs with strong coordinate dependence of local responses due to vortex-antivortex unbinding and vortex entry from edges, Fano-fluctuations smear singularities imprinted by vorticity on the transition part of $PCR$ curve. We demonstrate good agreement between theory and experiments for a series of bath temperatures and photon energies in narrow-wire WSi SNSPDs. The time-resolved hotspot relaxation curves predicted by Fano fluctuations match the Lorentzian shapes observed in experiments over the whole range of bias currents investigated except for their tails.
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Submitted 9 February, 2017;
originally announced February 2017.
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Non-bolometric bottleneck in electron-phonon relaxation in ultra-thin WSi film
Authors:
M. Sidorova,
A. Kozorezov,
A. Semenov,
A. Korneev,
G. Chulkova,
Yu. Korneeva,
M. Mikhailov,
A. Devizenko,
G. Goltsman
Abstract:
We developed the model of the internal phonon bottleneck to describe the energy exchange between the acoustically soft ultrathin metal film and acoustically rigid substrate. Discriminating phonons in the film into two groups, escaping and nonescaping, we show that electrons and nonescaping phonons may form a unified subsystem, which is cooled down only due to interactions with escaping phonons, ei…
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We developed the model of the internal phonon bottleneck to describe the energy exchange between the acoustically soft ultrathin metal film and acoustically rigid substrate. Discriminating phonons in the film into two groups, escaping and nonescaping, we show that electrons and nonescaping phonons may form a unified subsystem, which is cooled down only due to interactions with escaping phonons, either due to direct phonon conversion or indirect sequential interaction with an electronic system. Using an amplitude-modulated absorption of the sub-THz radiation technique, we studied electron-phonon relaxation in ultrathin disordered films of tungsten silicide. We found an experimental proof of the internal phonon bottleneck. The experiment and simulation based on the proposed model agree well, resulting in tau_{e-ph} = 140-190 ps at T_C = 3.4 K, supporting the results of earlier measurements by independent techniques.
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Submitted 23 July, 2018; v1 submitted 25 July, 2016;
originally announced July 2016.
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Weak-Link Phenomena in AC-Biased Transition Edge Sensors
Authors:
Luciano Gottardi,
Hiroki Akamatsu,
Marcel Bruijn,
Jan-R. Gao,
Roland den Hartog,
Richard Hijmering,
Henk Hoevers,
Pourya Khosropanah,
Alex Kozorezov,
Jan van der Kuur,
Anton van der Linden,
Marcel Ridder
Abstract:
It has been recently demonstrated that superconducting transition edge sensors (TESs) behave as weak-links due to longitudinally induced superconductivity from the leads with higher Tc. In this work we study the implication of this behaviour for TES-based bolometers and microcalorimeter under ac bias. The TESs are read-out at frequencies between 1 and 5 MHz by a Frequency Domain Multiplexer based…
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It has been recently demonstrated that superconducting transition edge sensors (TESs) behave as weak-links due to longitudinally induced superconductivity from the leads with higher Tc. In this work we study the implication of this behaviour for TES-based bolometers and microcalorimeter under ac bias. The TESs are read-out at frequencies between 1 and 5 MHz by a Frequency Domain Multiplexer based on a linearised two-stage SQUID amplifier and high- Q lithographically made superconducting LC resonators. In particular, we focus on SRON TiAu TES bolometers with a measured dark Noise Equivalent Power (NEP) of $3.2 \cdot 10^{-19} W/Hz^{1/2}$ developed for the short wavelength band for the instrument SAFARI on the SPICA telescope.
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Submitted 3 April, 2016;
originally announced April 2016.
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Josephson effects in an alternating current biased transition edge sensor
Authors:
Luciano Gottardi,
Alex Kozorezov,
Hiroki Akamatsu,
Jan van der Kuur,
Marcel P. Bruijn,
Roland H. den Hartog,
Richard Hijmering,
Pourya Khosropanah,
Colin Lambert,
Anton. J. van der Linden,
Marcel L. Ridder,
Toyo Suzuki,
Jan R. Gao
Abstract:
We report the experimental evidence of the ac Josephson effect in a transition edge sensor (TES) operating in a frequency domain multiplexer and biased by ac voltage at MHz frequencies. The effect is observed by measuring the non-linear impedance of the sensor. The TES is treated as a weakly linked superconducting system and within the resistively shunted junction model framework. We provide a ful…
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We report the experimental evidence of the ac Josephson effect in a transition edge sensor (TES) operating in a frequency domain multiplexer and biased by ac voltage at MHz frequencies. The effect is observed by measuring the non-linear impedance of the sensor. The TES is treated as a weakly linked superconducting system and within the resistively shunted junction model framework. We provide a full theoretical explanation of the results by finding the analytic solution of the non-inertial Langevian equation of the system and calculating the non-linear response of the detector to a large ac bias current in the presence of noise.
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Submitted 2 April, 2016;
originally announced April 2016.
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Hotspot Relaxation Dynamics in a Current Carrying Superconductor
Authors:
F. Marsili,
M. J. Stevens,
A. Kozorezov,
V. B. Verma,
Colin Lambert,
J. A. Stern,
R. Horansky,
S. Dyer,
S. Duff,
D. P. Pappas,
A. Lita,
M. D. Shaw,
R. P. Mirin,
S. W. Nam
Abstract:
We experimentally studied the dynamics of optically excited hotspots in current carrying WSi superconducting nanowires as a function of bias current, bath temperature and excitation wavelength. We discovered that: (1) the hotspot relaxation is a factor of ~ 4 slower in WSi than in NbN; (2) the hotspot relaxation time depends on bias current, and (3) the current dependence of the hotspot relaxation…
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We experimentally studied the dynamics of optically excited hotspots in current carrying WSi superconducting nanowires as a function of bias current, bath temperature and excitation wavelength. We discovered that: (1) the hotspot relaxation is a factor of ~ 4 slower in WSi than in NbN; (2) the hotspot relaxation time depends on bias current, and (3) the current dependence of the hotspot relaxation time changes with temperature and wavelength. We explained all of these effects with a model based on quasi particle recombination.
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Submitted 9 June, 2015;
originally announced June 2015.
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Picosecond dynamics of hot carriers and phonons and scintillator non-proportionality
Authors:
A. Kozorezov,
J. K. Wigmore,
A. Owens
Abstract:
We have developed a model describing the non-proportional response in scintillators based on non-thermalised carrier and phonon transport. We show that the thermalization of e-h distributions produced in scintillators immediately after photon absorption may take longer than the period over which the non-proportional signal forms. The carrier and LO-phonon distributions during this period remain no…
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We have developed a model describing the non-proportional response in scintillators based on non-thermalised carrier and phonon transport. We show that the thermalization of e-h distributions produced in scintillators immediately after photon absorption may take longer than the period over which the non-proportional signal forms. The carrier and LO-phonon distributions during this period remain non-degenerate at quasi-equilibrium temperatures far exceeding room temperature. We solve balance equations describing the energy exchange in a hot bipolar plasma of electrons/holes and phonons. Taking into account dynamic screening we calculate the ambipolar diffusion coefficient at all temperatures. The non-proportional light yields calculated for NaI are shown to be consistent with experimental data. We discuss the implications of a non-equilibrium model, comparing its predictions with a model based on the transport of thermalised carriers. Finally, evidence for non-equilibrium effects is suggested by the shape of non-proportionality curve and wide dispersion in data observed in K-dip spectroscopy near the threshold. A comparison of the predicted curves shows good agreement for deformation potential value in the range 7-8 eV.
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Submitted 8 June, 2012;
originally announced June 2012.
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Electron-phonon interaction in a superconductor with Kondo scattering
Authors:
A. G. Kozorezov,
A. A. Golubov,
J. K. Wigmore,
D. Martin,
P. Verhoeve,
R. A. Hijmering
Abstract:
In a superconductor with magnetic impurities, Kondo scattering results in the formation of localized states inside the superconducting gap. We show that inelastic electronic transitions involving quasiparticle scattering into and out of the localized states may result in significant changes in the non equilibrium properties of the superconductor. Using the model of Muller-Hartmann and Zittartz f…
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In a superconductor with magnetic impurities, Kondo scattering results in the formation of localized states inside the superconducting gap. We show that inelastic electronic transitions involving quasiparticle scattering into and out of the localized states may result in significant changes in the non equilibrium properties of the superconductor. Using the model of Muller-Hartmann and Zittartz for the extreme dilute limit, and including both deformation potential and spin-lattice coupling we have calculated the rates of such inelastic transitions between continuum and discrete states, and shown that they may greatly modify quasiparticle interactions. The individual processes are: quasiparticle trapping into discrete states, enhanced recombination with localized quasiparticles, and pair breaking and detrapping of localized quasiparticles by sub-gap phonons. We find that all these processes give rise to clearly distinguishable temperature dependences of the kinetic parameters.
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Submitted 9 April, 2008;
originally announced April 2008.
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Enhancement of photo-responsivity of small gap, multiple tunnelling superconducting tunnel junctions due to quasiparticle multiplication
Authors:
G. Brammertz,
A. G. Kozorezov,
R. den Hartog,
P. Verhoeve,
A. Peacock,
J. K. Wigmore,
D. Martin,
R. Venn
Abstract:
We recently predicted the formation of a highly non-equilibrium quasiparticle (qp) distribution in low TC multiple tunnelling superconducting tunnel junctions (STJs) [1]. The situation arises through qp energy gain in cycles of successive forward and back tunnelling events in the absence of relaxation via sub-gap phonon emission. The qps can acquire sufficient energy to emit phonons, which break…
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We recently predicted the formation of a highly non-equilibrium quasiparticle (qp) distribution in low TC multiple tunnelling superconducting tunnel junctions (STJs) [1]. The situation arises through qp energy gain in cycles of successive forward and back tunnelling events in the absence of relaxation via sub-gap phonon emission. The qps can acquire sufficient energy to emit phonons, which break more Cooper pairs and release additional qps. In this paper we report theoretical and experimental studies of the effect of this process on photon detection by such an STJ. We derived a set of energy-dependent balance equations [2], which describe the kinetics of the qps and phonons, including the qp multiplication process described above. Solution of the balance equations gives the non-equilibrium distribution of the qps as a function of time and energy, and hence the responsivity of the STJ as a function of bias voltage. We compared the theoretical results with experiments on high quality, multiple-tunnelling Al STJs cooled to 35mK in an adiabatic demagnetisation refrigerator, and illuminated with monochromatic photons with wavelengths between 250 and 1000 nm. It was found that in the larger junctions with the longest qp loss time, both responsivity and signal decay time increased rapidly with bias voltage. Excellent agreement was obtained between the observed effects and theoretical modelling.
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Submitted 13 July, 2004;
originally announced July 2004.
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Energy-dependent kinetic model of photon absorption by superconducting tunnel junctions
Authors:
G. Brammertz,
A. G. Kozorezov,
J. K. Wigmore,
R. den Hartog,
P. Verhoeve,
D. Martin,
A. Peacock,
A. A. Golubov,
H. Rogalla
Abstract:
We describe a model for photon absorption by superconducting tunnel junctions in which the full energy dependence of all the quasiparticle dynamic processes is included. The model supersedes the well-known Rothwarf-Taylor approach, which becomes inadequate for a description of the small gap structures that are currently being developed for improved detector resolution and responsivity. In these…
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We describe a model for photon absorption by superconducting tunnel junctions in which the full energy dependence of all the quasiparticle dynamic processes is included. The model supersedes the well-known Rothwarf-Taylor approach, which becomes inadequate for a description of the small gap structures that are currently being developed for improved detector resolution and responsivity. In these junctions relaxation of excited quasiparticles is intrinsically slow so that the energy distribution remains very broad throughout the whole detection process. By solving the energy-dependent kinetic equations describing the distributions, we are able to model the temporal and spectral evolution of the distribution of quasiparticles initially generated in the photo-absorption process. Good agreement is obtained between the theory and experiment.
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Submitted 13 July, 2004;
originally announced July 2004.
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Strong Quasiparticle Trapping In A 6x6 Array Of Vanadium-Aluminum Superconducting Tunnel Junctions
Authors:
G. Brammertz,
A. Peacock,
P. Verhoeve,
A. Kozorezov,
R. den Hartog,
N. Rando,
R. Venn
Abstract:
A 6x6 array of symmetrical V/Al/AlOx/Al/V Superconducting Tunnel Junctions (STJs) was fabricated. The base electrode is a high quality epitaxial film with a residual resistance ratio (RRR) of ~30. The top film is polycrystalline with an RRR of ~10. The leakage currents of the 25x25 mm^2 junctions are of the order of 0.5 pA/mm^2 at a bias voltage of 100 mV, which corresponds to a dynamical resist…
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A 6x6 array of symmetrical V/Al/AlOx/Al/V Superconducting Tunnel Junctions (STJs) was fabricated. The base electrode is a high quality epitaxial film with a residual resistance ratio (RRR) of ~30. The top film is polycrystalline with an RRR of ~10. The leakage currents of the 25x25 mm^2 junctions are of the order of 0.5 pA/mm^2 at a bias voltage of 100 mV, which corresponds to a dynamical resistance of ~ 3 10^5 ohms. When the array was illuminated by 6 keV X-ray photons from a 55Fe radioactive source the single photon charge output was found to be low and strongly dependent on the temperature of the devices. This temperature dependence at X-ray energies can be explained by the existence of a very large number of quasiparticle (QP) traps in the Vanadium. QPs are confined in these traps, having a lower energy gap than the surrounding material, and are therefore not available for tunneling. The number of traps can be derived from the energy dependence of the responsivity of the devices (charge output per electron volt of photon input energy).
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Submitted 18 October, 2001;
originally announced October 2001.
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Lattice-dynamics of a Disordered solid-solid Interface
Authors:
G. Fagas,
A. G. Kozorezov,
C. J. Lambert,
J. K. Wigmore,
A. Peacock,
A. Poelaert,
R. den Hartog
Abstract:
Generic properties of elastic phonon transport at a disordered interface are studied. The results show that phonon transmittance is a strong function of frequency and the disorder correlation length. At frequencies lower than the van Hove singularity the transmittance at a given frequency increases as the correlation length decreases. At low frequencies, this is reflected by different power-laws…
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Generic properties of elastic phonon transport at a disordered interface are studied. The results show that phonon transmittance is a strong function of frequency and the disorder correlation length. At frequencies lower than the van Hove singularity the transmittance at a given frequency increases as the correlation length decreases. At low frequencies, this is reflected by different power-laws for phonon conductance across correlated and uncorrelated disordered interfaces which are in approximate agreement with perturbation theory of an elastic continuum. These results can be understood in terms of simple mosaic and two-colour models of the interface.
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Submitted 31 March, 1999;
originally announced March 1999.
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Lattice-dynamical calculation of phonon scattering at a disordered interface
Authors:
G. Fagas,
A. G. Kozorezov,
C. J. Lambert,
J. K. Wigmore
Abstract:
For an fcc crystal with central force interactions and separately for a scalar model on a square lattice, we compute exactly the phonon transmission coefficient $T(ω)$ through a disordered planar interface between two identical semi - infinite leads. At high frequencies $T(ω)$ exhibits a strong frequency dependence which is determined by the correlation length of the disorder.
For an fcc crystal with central force interactions and separately for a scalar model on a square lattice, we compute exactly the phonon transmission coefficient $T(ω)$ through a disordered planar interface between two identical semi - infinite leads. At high frequencies $T(ω)$ exhibits a strong frequency dependence which is determined by the correlation length of the disorder.
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Submitted 3 August, 1998;
originally announced August 1998.
