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Temperature and Pressure Dependent Luminescence Mechanism of Zinc-Blende Structured ZnS:Mn Nanophosphor under UV and X-ray Excitations
Authors:
A. K. Somakumar,
Y. Zhydachevskyy,
D. Wlodarczyk,
S. S Haider,
J. Barzowska,
K. R Bindu,
Y. K. Edathumkandy,
Tatiana Zajarniuk,
A. Szewczyk,
S. Narayanan,
A. Lysak,
H. Przybylińska,
E. I Anila,
A. Suchocki
Abstract:
A comprehensive photoluminescence and mechanoluminescence analysis of ZnS:Mn2+ nano-phosphor with zinc blende structure is presented. The sample containing quantum dot-sized nanocrystallites were synthesized by the chemical precipitation method and shows excellent orange luminescence at ambient conditions related to the 4T1->6A1 transition. The sample shows stable and identical luminescence behavi…
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A comprehensive photoluminescence and mechanoluminescence analysis of ZnS:Mn2+ nano-phosphor with zinc blende structure is presented. The sample containing quantum dot-sized nanocrystallites were synthesized by the chemical precipitation method and shows excellent orange luminescence at ambient conditions related to the 4T1->6A1 transition. The sample shows stable and identical luminescence behavior under both UV and X-ray excitation at ambient conditions and also shows excellent self-powered mechanoluminescence properties. The pressure and temperature-induced luminescence mechanism of the phosphor is also established. The shift of the 4T1->6A1 luminescence band of Mn2+ with both pressure and temperature and the luminescence mechanism is explained via the d5 Tanabe Sugano diagram. The broad luminescence band of 4T1->6A1 transition shifts from visible to near-infrared range at a rate of -35.8 meV/GPa with the increase of pressure and it is subsequently quenched completely at a pressure of 16.41 GPa due to a reversible phase transition from zinc blende to rocksalt phase. The high-pressure and temperature-dependent decay kinetics measurements of the sample luminescence are also reported.
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Submitted 19 April, 2024;
originally announced April 2024.
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Temperature dependence of the bandgap of Eu doped {ZnCdO/ZnO}30 multilayer structures
Authors:
A. Lysak,
E. Przeździecka,
A. Wierzbicka,
R. Jakiela,
Z. Khosravizadeh,
M. Szot,
A. Adhikari,
A. Kozanecki
Abstract:
In situ Eu-doped {ZnCdO/ZnO}30 multilayer systems were grown on p-type Si-substrates and on quartz substrates by plasma-assisted molecular beam epitaxy. Various Eu concentrations in the samples were achieved by controlling temperature of the europium effusion cell. The properties of as-grown and annealed {ZnCdO/ZnO}30:Eu multilayers were investigated using secondary ion mass spectrometry (SIMS) an…
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In situ Eu-doped {ZnCdO/ZnO}30 multilayer systems were grown on p-type Si-substrates and on quartz substrates by plasma-assisted molecular beam epitaxy. Various Eu concentrations in the samples were achieved by controlling temperature of the europium effusion cell. The properties of as-grown and annealed {ZnCdO/ZnO}30:Eu multilayers were investigated using secondary ion mass spectrometry (SIMS) and X-ray diffraction methods. SIMS measurements showed that annealing at 700°C and 900°C practically did not change the Eu concentration and the rare earth depth profiles are uniform. It was found that the band gap depends on the concentration of Eu and it was changed by rapid thermal annealing. Varshni and Bose-Einstein equations were used to describe the temperature dependence of the band gap of {ZnCdO/ZnO}30:Eu multilayer structures and Debye and Einstein temperatures were obtained.
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Submitted 16 February, 2024;
originally announced February 2024.
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MBE grown preferentially oriented CdMgO alloy on m- and c-plane sapphire substrates
Authors:
A. Adhikari,
A. Lysak,
A. Wierzbicka,
P. Sybilski,
A. Reszka,
B. S. Witkowski,
E. Przezdziecka
Abstract:
Unlike other II-VI semiconductors, CdO-based transparent oxide has great potential application for the fabrication of many optoelectronic devices. In this work, we study the growth of CdxMg1-xO alloys on m- and on c-plane sapphire substrates in Cd-rich to Mg-rich conditions using the plasma-assisted molecular beam epitaxy method. A structural and morphological study of CdMgO random alloys was carr…
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Unlike other II-VI semiconductors, CdO-based transparent oxide has great potential application for the fabrication of many optoelectronic devices. In this work, we study the growth of CdxMg1-xO alloys on m- and on c-plane sapphire substrates in Cd-rich to Mg-rich conditions using the plasma-assisted molecular beam epitaxy method. A structural and morphological study of CdMgO random alloys was carried out using X-ray diffraction and Atomic Force Microscope (AFM) techniques whereas composition analysis was done by Energy-dispersive X-ray (EDX) spectroscopy method. The optical properties of thin films were investigated by UV-Vis spectroscopy at room temperature. X-ray analysis confirmed the presence of cubic rock salt structure with <111> CdMgO crystallographic orientation on c-plane sapphire and <110> CdMgO preferential orientation on m-plane sapphire. The surface roughness was measured by the AFM. From the absorption curve, the optical bandgaps were determined using Tauc relation and it was found that the bandgap of films is influenced by the incorporation of Mg2+ ions into the CdO lattice. Bowing parameter was calculated both for samples on m- and c- sapphires.
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Submitted 14 February, 2023;
originally announced February 2023.
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Effect of rapid thermal annealing on short period {CdO/ZnO}m SLs grown on m-Al2O3
Authors:
A. Lysak,
E. Przeździecka,
R. Jakiela,
A. Reszka,
B. Witkowski,
Z. Khosravizadeh,
A. Adhikari,
J. M. Sajkowski,
A. Kozanecki
Abstract:
Here, we report on the characterization of {CdO/ZnO}m superlattice structures (SLs) grown by plasma assisted molecular beam epitaxy. The properties of as-grown and annealed SLs deposited on m-oriented sapphire were investigated by secondary ion mass spectrometry (SIMS) and scanning electron microscopy (SEM) in cathodoluminescence (CL) and energy dispersive X-ray modes. The deformation of the cryst…
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Here, we report on the characterization of {CdO/ZnO}m superlattice structures (SLs) grown by plasma assisted molecular beam epitaxy. The properties of as-grown and annealed SLs deposited on m-oriented sapphire were investigated by secondary ion mass spectrometry (SIMS) and scanning electron microscopy (SEM) in cathodoluminescence (CL) and energy dispersive X-ray modes. The deformation of the crystallographic structure of SLs was observed after rapid thermal annealing at 900°C in oxygen flow due to migration and segregation of Cd atoms. SIMS measurements revealed that the distributions of cadmium in the annealed samples depend on the thicknesses of the CdO and ZnO sublayers in the as grown superlattice structures. Depth-resolved CL measurements showed that shifting of the near band edge emission peaks is closely related to the Cd profiles measured with SIMS.
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Submitted 14 February, 2023;
originally announced February 2023.
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Effective Mg Incorporation in CdMgO Alloy on Quartz Substrate Grown by Plasma-assisted MBE
Authors:
A. Adhikari,
A. Wierzbicka,
A. Lysak,
P. Sybilski,
B. S. Witkowski,
E. Przezdziecka
Abstract:
The development of CdMgO ternary alloy with a single cubic phase is challenging but meaningful work for technological advancement. In this work, we have grown a series of Cd1-xMgxO ternary random alloys with various Mg concentrations (x = 0, 30, 32, 45, and 55%) on quartz substrate by plasma-assisted molecular beam epitaxy (PA-MBE) technique. The structural investigations of alloys were performed…
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The development of CdMgO ternary alloy with a single cubic phase is challenging but meaningful work for technological advancement. In this work, we have grown a series of Cd1-xMgxO ternary random alloys with various Mg concentrations (x = 0, 30, 32, 45, and 55%) on quartz substrate by plasma-assisted molecular beam epitaxy (PA-MBE) technique. The structural investigations of alloys were performed using the X-ray diffraction (XRD) technique. The decreases in average crystallite size and lattice parameters were observed with an increase in Mg content in the alloys. XRD analysis confirms a single cubic phase is obtained for alloy compositions. The elemental and morphological studies were carried out using energy dispersive x-ray (EDX) spectroscopy and atomic force microscope (AFM) technique, respectively. The optical investigation was carried out using UV-Vis spectroscopy. The optical bandgaps were estimated using the Tauc relation and it was varied from 2.34 eV to 3.47 eV by varying the Mg content from zero to 55% in the alloys. The Urbach energy increases from 112 meV to 350 meV which suggests a more disordered localized state with an increase in Mg incorporation in the alloys.
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Submitted 21 October, 2022;
originally announced October 2022.
