Showing 1–30 of 30 results for author: Malard, M

Strong magneto-optical responses of an ensemble of defect-bound excitons in aged WS$_{2}$ and WSe$_{2}$ monolayers

Authors: Frederico B. Sousa, Alessandra Ames, Mingzu Liu, Pedro L. Gastelois, Vinícius A. Oliveira, Da Zhou, Matheus J. S. Matos, Helio Chacham, Mauricio Terrones, Marcio D. Teodoro, Leandro M. Malard

Abstract: Transition metal dichalcogenide (TMD) monolayers present a singular coupling in their spin and valley degrees of freedom. Moreover, by applying an external magnetic field it is possible to break the energy degeneracy between their K and $-$K valleys. Thus, this analogous valley Zeeman effect opens the possibility of controlling and distinguishing the spin and valley of charge carriers in TMDs by t… ▽ More Transition metal dichalcogenide (TMD) monolayers present a singular coupling in their spin and valley degrees of freedom. Moreover, by applying an external magnetic field it is possible to break the energy degeneracy between their K and $-$K valleys. Thus, this analogous valley Zeeman effect opens the possibility of controlling and distinguishing the spin and valley of charge carriers in TMDs by their optical transition energies, making these materials promising for the next generation of spintronic and photonic devices. However, the free excitons of pristine TMD monolayer samples present a moderate valley Zeeman splitting, which is measured by their g-factor values that are approximately $-4$. Therefore, for application purposes it is mandatory alternative excitonic states with higher magnetic responses. Here we investigate the valley Zeeman effect in aged WS$_{2}$ and WSe$_{2}$ grown monolayers by magneto-photoluminescence measurements at cryogenic temperatures. These samples present a lower energy defect-bound exciton emission related to defects adsorbed during the aging process. While the free excitons of these samples exhibit g-factors between $-3$ and $-4$, their defect-bound excitons present giant effective g-factor values of $-(25.0 \pm 0.2)$ and $-(19.1 \pm 0.2)$ for WS$_{2}$ and WSe$_{2}$ aged monolayers, respectively. In addition, we observe a significant spin polarization of charge carriers in the defective mid gap states induced by the external magnetic fields. We explain this spin polarized population in terms of a spin-flip transition mechanism, which is also responsible for the magnetic dependent light emission of the defect-bound exciton states. Our work sheds light in the potential of aged TMDs as candidates for spintronic based devices. △ Less

Submitted 5 April, 2024; originally announced April 2024.

Detecting and leaking a Majorana bound state through proximity to a Kitaev ring

Authors: Mariana Malard, David S. Brandão

Abstract: We show that the existence of a Majorana bound state at one end of a Kitaev chain is unambiguously signaled by observable quantities in a nearby Kitaev ring. When the Kitaev chain is in the topological phase, the band structure of the Kitaev ring breaks chiral symmetry and the ring-Majoranas' spectral functions are even functions of momentum and energy, the latter wielding time-reversal and partic… ▽ More We show that the existence of a Majorana bound state at one end of a Kitaev chain is unambiguously signaled by observable quantities in a nearby Kitaev ring. When the Kitaev chain is in the topological phase, the band structure of the Kitaev ring breaks chiral symmetry and the ring-Majoranas' spectral functions are even functions of momentum and energy, the latter wielding time-reversal and particle-hole symmetric occupation numbers and, hence, zero current in the ring. Driving a phase transition in the Kitaev chain (e.g., using a backgate to vary the chemical potential of the chain through its critical value), the replacement of the Majorana bound state by a trivial fermion is manifest by chiral symmetry reappearing in the band structure of the ring and by the ring-Majoranas' spectral functions loss of parity, wielding time-reversal and particle-hole symmetry breaking in the occupation numbers and a spontaneous current in the ring. Energy resonance and maximum spectral weight exactly at the resonance energy concur for a high leakage probability between ring-Majoranas' states and the Majorana bound state, whereas the lack of energy resonance makes unlikely any leakage between ring-Majoranas' states and the trivial fermion states. The proposed setup also invites further investigations in the context of braiding and/or fusion of Majorana states, both as detection mechanisms and for quantum computing purposes. △ Less

Submitted 3 March, 2024; originally announced March 2024.

Nano-optical investigation of grain boundaries, strain and edges in CVD grown MoS$_{2}$ monolayers

Authors: Frederico B. Sousa, Rafael Battistella Nadas, Rafael Martins, Ana P. M. Barboza, Jaqueline S. Soares, Bernardo R. A. Neves, Ive Silvestre, Ado Jorio, Leandro M. Malard

Abstract: The role of defects in two-dimensional semiconductors and how they affect the intrinsic properties of these materials have been a wide researched topic over the past decades. Optical characterization such as photoluminescence and Raman spectroscopies are important tools to probe their physical properties and the impact of defects. However, conventional optical techniques present a spatial resoluti… ▽ More The role of defects in two-dimensional semiconductors and how they affect the intrinsic properties of these materials have been a wide researched topic over the past decades. Optical characterization such as photoluminescence and Raman spectroscopies are important tools to probe their physical properties and the impact of defects. However, conventional optical techniques present a spatial resolution limitation lying in a $μ$m-scale, which can be overcomed by the use of near-field optical measurements. Here, we use tip-enhanced photoluminescence and Raman spectroscopies to unveil nanoscale optical heterogeneities at grain boundaries, local strain fields and edges in grown MoS$_{2}$ monolayers. A noticeable enhancement of the exciton peak intensity corresponding to a trion emission quenching is observed at narrow regions down to 47 nm of width at grain boundaries related to doping effects. Besides, localized strain fields inside the sample lead to non-uniformities in the intensity and energy position of photoluminescence peaks. Finally, distinct samples present different nano-optical responses at their edges due to strain and passivation defects. The passivated defective edges show a photoluminescence intensity enhancement and energy blueshift as well as a frequency blueshift of the 2LA Raman mode. On the other hand, the strained edges display a photoluminescence energy redshift and frequency redshifts for E$_{2g}$ and 2LA Raman modes. Our work shows that different defect features can be only probed by using optical spectroscopies with a nanometric resolution, thus revealing hindered local impact of different nanoscale defects in two-dimensional materials. △ Less

Submitted 22 January, 2024; originally announced January 2024.

Effects of Vanadium Doping on the Optical Response and Electronic Structure of WS$_{2}$ Monolayers

Authors: Frederico B. Sousa, Boyang Zheng, Mingzu Liu, Geovani C. Resende, Da Zhou, Marcos A. Pimenta, Mauricio Terrones, Vincent H. Crespi, Leandro M. Malard

Abstract: Two-dimensional dilute magnetic semiconductors has been recently reported in semiconducting transition metal dichalcogenides by the introduction of spin-polarized transition metal atoms as dopants. This is the case of vanadium-doped WS$_2$ and WSe$_2$ monolayers, which exhibits a ferromagnetic ordering even above room temperature. However, a broadband characterization of their electronic band stru… ▽ More Two-dimensional dilute magnetic semiconductors has been recently reported in semiconducting transition metal dichalcogenides by the introduction of spin-polarized transition metal atoms as dopants. This is the case of vanadium-doped WS$_2$ and WSe$_2$ monolayers, which exhibits a ferromagnetic ordering even above room temperature. However, a broadband characterization of their electronic band structure and its dependence on vanadium concentration is still lacking. Therefore, here we perform power-dependent photoluminescence, resonant four-wave mixing, and differential reflectance spectroscopy to study the optical transitions close to the A exciton energy of vanadium-doped WS$_2$ monolayers with distinct concentrations. Instead of a single A exciton peak, vanadium-doped samples exhibit two photoluminescence peaks associated with transitions to occupied and unoccupied bands. Moreover, resonant Raman spectroscopy and resonant second-harmonic generation measurements revealed a blueshift in the B exciton but no energy change in the C exciton as vanadium is introduced in the monolayers. Density functional theory calculations showed that the band structure is sensitive to the Hubbard \(U\) correction for vanadium and several scenarios are proposed to explain the two photoluminescence peaks around the A exciton energy region. Our work provides the first broadband optical characterization of these two-dimensional dilute magnetic semiconductors, shedding light on the novel electronic features of WS$_{2}$ monolayers which are tunable by the vanadium concentration. △ Less

Submitted 17 January, 2024; originally announced January 2024.

Amplification of interlayer exciton emission in twisted WSe$_2$/WSe$_2$/MoSe$_2$ heterotrilayers

Authors: Chirag C. Palekar, Paulo E. Faria Junior, Barbara Rosa, Frederico B. Sousa, Leandro M. Malard, Jaroslav Fabian, Stephan Reitzenstein

Abstract: Transition metal dichalcogenide (TMDC) heterostructures have unique properties that depend on the twisting angle and stacking order of two or more monolayers. However, their practical applications are limited by the low photoluminescence yield of interlayer excitons. This limits the use of layered 2D materials as a versatile platform for developing innovative optoelectronic and spintronic devices.… ▽ More Transition metal dichalcogenide (TMDC) heterostructures have unique properties that depend on the twisting angle and stacking order of two or more monolayers. However, their practical applications are limited by the low photoluminescence yield of interlayer excitons. This limits the use of layered 2D materials as a versatile platform for developing innovative optoelectronic and spintronic devices. In this study, we report on the emission enhancement of interlayer excitons in multilayered-stacked monolayers through the fabrication of heterotrilayers consisting of WSe$_2$/WSe$_2$/MoSe$_2$ with differing twist angles. Our results show that an additional WSe$_2$ monolayer introduces new absorption pathways, leading to an improvement in the emission of interlayer excitons by more than an order of magnitude. The emission boost is affected by the twist angle, and we observe a tenfold increase in the heterotrilayer area when there is a 44$^\circ$ angle between the WSe$_2$ and MoSe$_2$ materials, as opposed to their heterobilayer counterparts. Furthermore, using density functional theory, we identify the emergence of new carrier transfer pathways in the three-layer sample which extends the current understanding of 2D semiconducting heterostructures. In addition, our research provides a viable way to significantly enhance the emission of interlayer excitons. The emission enhancement of interlayer excitons is significant not only for studying the fundamental properties of interlayer excitons, but also for enabling optoelectronic applications that utilize engineered 2D quantum materials with high luminescence yield. △ Less

Submitted 4 November, 2023; originally announced November 2023.

Excitonic Resonances in Coherent Anti-Stokes Raman Scattering from Single Wall Carbon Nanotubes

Authors: Georgy Gordeev, Lucas Lafeta, Benjamin Scott Flavel, Ado Jorio, Leandro M. Malard

Abstract: In this work we investigate the role of exciton resonances in coherent anti-Stokes Raman scattering (er-CARS) in single walled carbon nanotubes (SWCNTs). We drive the nanotube system in simultaneous phonon and excitonic resonances, where we observe a superior enhancement by orders of magnitude exceeding non-resonant cases. We investigated the resonant effects in five $(n,m)$ chiralities and find t… ▽ More In this work we investigate the role of exciton resonances in coherent anti-Stokes Raman scattering (er-CARS) in single walled carbon nanotubes (SWCNTs). We drive the nanotube system in simultaneous phonon and excitonic resonances, where we observe a superior enhancement by orders of magnitude exceeding non-resonant cases. We investigated the resonant effects in five $(n,m)$ chiralities and find that the er-CARS intensity varies drastically between different nanotube species. The experimental results are compared with a perturbation theory model. Finally, we show that such giant resonant non-linear signals enable rapid mapping and local heating of individualized CNTs, suggesting easy tracking of CNTs for future nanotoxology studies and therapeutic application in biological tissues. △ Less

Submitted 3 November, 2023; v1 submitted 6 May, 2023; originally announced May 2023.

Comments: 17 pages, 6 figures

Journal ref: The Journal of Physical Chemistry C 2023 127 (41), 20438-20444

Symmetry-enforced nodal lines in the band structures of vacancy-engineered graphene

Authors: Matheus S. M. de Sousa, Fujun Liu, Mariana Malard, Fanyao Qu, Wei Chen

Abstract: We elaborate that single-layer graphene with periodic vacancies can have a band structure containing nodal lines or nodal loops, opening the possibility of graphene-based electronic or spintronic devices with novel functionalities. The principle is that by removing carbon atoms such that the lattice becomes nonsymmorphic, every two sublattices in the unit cell will map to each other under glide pl… ▽ More We elaborate that single-layer graphene with periodic vacancies can have a band structure containing nodal lines or nodal loops, opening the possibility of graphene-based electronic or spintronic devices with novel functionalities. The principle is that by removing carbon atoms such that the lattice becomes nonsymmorphic, every two sublattices in the unit cell will map to each other under glide plane operation. This mapping yields degenerate eigenvalues for the glide plane operation, which guarantees that the energy bands must stick together pairwise at a boundary of the Brillouin zone. Moving away from the Brillouin zone boundary causes the symmetry-enforced nodal lines to split, resulting in accidental nodal lines caused by the crossings of the split bands. Moreover, the density of states at the Fermi level may be dramatically enhanced if the nodal lines crosses the Fermi level. The nodal lines occur a variety of vacancy configurations even in the presence of Rashba spin-orbit coupling. Finally, our theory also explains the nodal loops surrounding the entire Brillouin zone of a chevron-type nanoporous graphene fabricated in a recent experiment. △ Less

Submitted 27 May, 2022; v1 submitted 25 September, 2021; originally announced September 2021.

Comments: 8 pages, 5 figures

Journal ref: Phys. Rev. B 105, 155414 (2022)

Less is more: Vacancy-engineered nodal-line semimetals

Authors: Fujun Liu, Fanyao Qu, Igor Zutic, Mariana Malard

Abstract: A nodal-line semimetal phase which is enforced by the symmetries of the material is interesting from fundamental and application standpoints. We demonstrate that such a phase of matter can be engineered by a simple method: Introducing vacancies in certain configurations in common symmorphic materials leads to nonsymmorphic polymorphs with symmetry-enforced nodal lines which are immune to symmetry-… ▽ More A nodal-line semimetal phase which is enforced by the symmetries of the material is interesting from fundamental and application standpoints. We demonstrate that such a phase of matter can be engineered by a simple method: Introducing vacancies in certain configurations in common symmorphic materials leads to nonsymmorphic polymorphs with symmetry-enforced nodal lines which are immune to symmetry-preserving perturbations, such as spin-orbit coupling. Furthermore, the spectrum acquires also accidental nodal lines with enhanced robustness to perturbations. These phenomena are explained on the basis of a symmetry analysis of a minimal effective two-dimensional model which captures the relevant symmetries of the proposed structures, and verified by first-principles calculations of vacancy-engineered borophene polymorphs, both with vanishing and with strong Rashba spin-orbit coupling. Our findings offer an alternative path to using complicated nonsymmorphic compounds to design robust nodal-line semimetals; one can instead remove atoms from a simple symmorphic monoatomic material. △ Less

Submitted 11 August, 2021; originally announced August 2021.

Revealing Interfaces of Two-Dimensional Lateral Heterostructures by Second Harmonic Generation

Authors: Frederico B. Sousa, Lucas Lafeta, Alisson R. Cadore, Prasana K. Sahoo, Leandro M. Malard

Abstract: The interface between two different semiconductors is crucial in determining the electronic properties at the heterojunction, therefore novel techniques that can probe these regions are of particular interest. Recently it has been shown that heterojunctions of two-dimensional transition metal dichalcogenides have sharp and epitaxial interfaces that can be used to the next generation of flexible an… ▽ More The interface between two different semiconductors is crucial in determining the electronic properties at the heterojunction, therefore novel techniques that can probe these regions are of particular interest. Recently it has been shown that heterojunctions of two-dimensional transition metal dichalcogenides have sharp and epitaxial interfaces that can be used to the next generation of flexible and on chip optoelectronic devices. Here, we show that second harmonic generation (SHG) can be used as an optical tool to reveal these atomically sharp interfaces in different lateral heterostructures. We observed an enhancement of the SH intensity at the heterojunctions, and showed that is due to a coherent superposition of the SH emission from each material. This constructive interference pattern reveals a phase difference arising from the distinct second-order susceptibilities of both materials at the interface. Our results demonstrate that SHG microscopy is a sensitive characterization technique to unveil nanometric features in layered materials and their heterostructures. △ Less

Submitted 10 August, 2021; originally announced August 2021.

Journal ref: 2D Mater. 8 035051 (2021)

Second- and third-order optical susceptibilities in bidimensional semiconductors near excitons states

Authors: Lucas Lafeta, Aurea Corradi, Tianyi Zhang, Ethan Kahn, Ismail Bilgin, Bruno R. Carvalho, Swastik Kar, Mauricio Terrones, Leandro M. Malard

Abstract: Semiconducting Transition Metal Dichalcogenides (TMDs) have significant nonlinear optical effects. In this work we have used second-harmonic generation (SHG) and the four-wave mixing (FWM) spectroscopy in resonance with the excitons in MoS2, MoSe2, and WS2 monolayers to characterize the nonlinear optical properties of these materials. We show that trions and excitons are responsible for enhancing… ▽ More Semiconducting Transition Metal Dichalcogenides (TMDs) have significant nonlinear optical effects. In this work we have used second-harmonic generation (SHG) and the four-wave mixing (FWM) spectroscopy in resonance with the excitons in MoS2, MoSe2, and WS2 monolayers to characterize the nonlinear optical properties of these materials. We show that trions and excitons are responsible for enhancing the nonlinear optical response, and determine the exciton and trion energies by comparing with the photoluminescence spectra. Moreover, we extract the second and third order optical sheet susceptibility near exciton energies and compare with values found in the literature. We also demonstrate the ability to generate different nonlinear effects in a wide spectral range in the visible region for monolayer MoS2, opening the possibility of using two-dimensional materials for nonlinear optoelectronic and photonic applications. △ Less

Submitted 25 January, 2021; originally announced January 2021.

Comments: 8 pages, 4 figures

Journal ref: 2D Mater. 8 035010 (2021)

Scaling behavior in a multicritical one-dimensional topological insulator

Authors: M. Malard, H. Johannesson, W. Chen

Abstract: A class of Aubry-André-Harper models of spin-orbit coupled electrons exhibits a topological phase diagram where two regions belonging to the same phase are split up by a multicritical point. The critical lines which meet at this point each defines a topological quantum phase transition with a second-order nonanalyticity of the ground-state energy, accompanied by a linear closing of the spectral ga… ▽ More A class of Aubry-André-Harper models of spin-orbit coupled electrons exhibits a topological phase diagram where two regions belonging to the same phase are split up by a multicritical point. The critical lines which meet at this point each defines a topological quantum phase transition with a second-order nonanalyticity of the ground-state energy, accompanied by a linear closing of the spectral gap with respect to the control parameter; except at the multicritical point which supports fourth-order transitions with parabolic gap-closing. Here both types of criticality are characterized through a scaling analysis of the curvature function defined from the topological invariant of the model. We extract the critical exponents of the diverging curvature function at the non-high symmetry points in the Brillouin zone where the gap closes, and also apply a renormalization group approach to the flattening curvature function at high symmetry points. We also derive a basis-independent correlation function between Wannier states to characterize the transition. Intriguingly, we find that the critical exponents and scaling law defined with respect to the spectral gap remain the same regardless of the order of the transition. △ Less

Submitted 26 November, 2020; v1 submitted 18 August, 2020; originally announced August 2020.

Comments: 4 figures

Journal ref: Phys. Rev. B 102, 205420 (2020)

Gate-tunable non-volatile photomemory effect in MoS$_2$ transistors

Authors: Andreij C. Gadelha, Alisson R. Cadore, Kenji Watanabe, Takashi Tanigushi, Ana M. de Paula, Leandro M. Malard, Rodrigo G. Lacerda, Leonardo C. Campos

Abstract: Non-volatile memory devices have been limited to flash architectures that are complex devices. Here, we present a unique photomemory effect in MoS$_2$ transistors. The photomemory is based on a photodoping effect - a controlled way of manipulating the density of free charges in monolayer MoS$_2$ using a combination of laser exposure and gate voltage application. The photodoping promotes changes on… ▽ More Non-volatile memory devices have been limited to flash architectures that are complex devices. Here, we present a unique photomemory effect in MoS$_2$ transistors. The photomemory is based on a photodoping effect - a controlled way of manipulating the density of free charges in monolayer MoS$_2$ using a combination of laser exposure and gate voltage application. The photodoping promotes changes on the conductance of MoS$_2$ leading to photomemory states with high memory on/off ratio. Such memory states are non-volatile with an expectation of retaining up to 50 % of the information for tens of years. Furthermore, we show that the photodoping is gate-tunable, enabling control of the recorded memory states. Finally, we propose a model to explain the photodoping, and we provide experimental evidence supporting such a phenomenon. In summary, our work includes the MoS$_2$ phototransistors in the non-volatile memory devices and expands the possibilities of memory application beyond conventional memory architectures. △ Less

Submitted 17 June, 2020; originally announced June 2020.

Journal ref: 2D Mater. 6 025036 (2019)

Local photodoping in monolayer MoS2

Authors: Andreij C. Gadelha, Alisson R. Cadore, Lucas Lafeta, Ana M. de Paula, Leandro M. Malard, Rodrigo G. Lacerda, Leonardo C. Campos

Abstract: Inducing electrostatic doping in 2D materials by laser exposure (photodoping effect) is an exciting route to tune optoelectronic phenomena. However, there is a lack of investigation concerning in what respect the action of photodoping in optoelectronic devices is local. Here, we employ scanning photocurrent microscopy (SPCM) techniques to investigate how a permanent photodoping modulates the photo… ▽ More Inducing electrostatic doping in 2D materials by laser exposure (photodoping effect) is an exciting route to tune optoelectronic phenomena. However, there is a lack of investigation concerning in what respect the action of photodoping in optoelectronic devices is local. Here, we employ scanning photocurrent microscopy (SPCM) techniques to investigate how a permanent photodoping modulates the photocurrent generation in MoS2 transistors locally. We claim that the photodoping fills the electronic states in MoS2 conduction band, preventing the photon-absorption and the photocurrent generation by the MoS2 sheet. Moreover, by comparing the persistent photocurrent (PPC) generation of MoS2 on top of different substrates, we elucidate that the interface between the material used for the gate and the insulator (gate-insulator interface) is essential for the photodoping generation. Our work gives a step forward to the understanding of the photodoping effect in MoS2 transistors and the implementation of such an effect in integrated devices. △ Less

Submitted 16 June, 2020; originally announced June 2020.

Journal ref: Nanotechnology 31 255701 (2020)

Multicriticality in a one-dimensional topological band insulator

Authors: Mariana Malard, David Brandao, Paulo Eduardo de Brito, Henrik Johannesson

Abstract: A central tenet in the theory of quantum phase transitions (QPTs) is that a nonanalyticity in the ground-state energy in the thermodynamic limit implies a QPT. Here we report on a finding that challenges this assertion. As a case study we take a phase diagram of a one-dimensional band insulator with spin-orbit coupled electrons, supporting trivial and topological gapped phases separated by interse… ▽ More A central tenet in the theory of quantum phase transitions (QPTs) is that a nonanalyticity in the ground-state energy in the thermodynamic limit implies a QPT. Here we report on a finding that challenges this assertion. As a case study we take a phase diagram of a one-dimensional band insulator with spin-orbit coupled electrons, supporting trivial and topological gapped phases separated by intersecting critical surfaces. The intersections define multicritical lines across which the ground-state energy becomes nonanalytical, concurrent with a closing of the band gap, but with no phase transition taking place. △ Less

Submitted 18 August, 2020; v1 submitted 27 January, 2020; originally announced January 2020.

Comments: 9 pages, 7 figures; published version, results unchanged; references added

Journal ref: Phys. Rev. Research 2, 033246 (2020)

Nonlinear dark-field imaging of 1D defects in monolayer dichalcogenides

Authors: Bruno R. Carvalho, Yuanxi Wang, Kazunori Fujisawa, Tianyi Zhang, Ethan Kahn, Ismail Bilgin, Pulickel M. Ajayan, Ana M. de Paula, Marcos A. Pimenta, Swastik Kar, Vincent H. Crespi, Mauricio Terrones, Leandro M. Malard

Abstract: Extended defects with one dimensionality smaller than that of the host, such as 2D grain boundaries in 3D materials or 1D grain boundaries in 2D materials, can be particularly damaging since they directly impede the transport of charge, spin or heat, and can introduce a metallic character into otherwise semiconducting systems. Unfortunately, a technique to rapidly and non-destructively image 1D de… ▽ More Extended defects with one dimensionality smaller than that of the host, such as 2D grain boundaries in 3D materials or 1D grain boundaries in 2D materials, can be particularly damaging since they directly impede the transport of charge, spin or heat, and can introduce a metallic character into otherwise semiconducting systems. Unfortunately, a technique to rapidly and non-destructively image 1D defects in 2D materials is lacking. Scanning transmission electron microscopy (STEM), Raman, photoluminescence and nonlinear optical spectroscopies, are all extremely valuable, but current implementations suffer from low throughput and a destructive nature (STEM) or limitations in their unambiguous sensitivity at the nanoscale. Here we demonstrate that dark-field second harmonic generation (SHG) microscopy can rapidly, efficiently, and non-destructively probe grain boundaries and edges in monolayer dichalcogenides (i.e. MoSe2, MoS2 and WS2). Dark-field SHG efficiently separates the spatial components of the emitted light and exploits interference effects from crystal domains of different orientations to localize grain boundaries and edges as very bright 1D patterns through a Cerenkov-type SHG emission. The frequency dependence of this emission in MoSe2 monolayers is explained in terms of plasmon-enhanced SHG related to the defects metallic character. This new technique for nanometer-scale imaging of the grain structure, domain orientation and localized 1D plasmons in 2D different semiconductors, thus enables more rapid progress towards both applications and fundamental materials discoveries. △ Less

Submitted 12 March, 2019; originally announced March 2019.

Comments: 15 pages, 5 figures

Journal ref: Nano Lett. 2020, 20, 1, 284-291

Movable but not removable band degeneracies in a symmorphic crystal

Authors: Mariana Malard, Paulo Eduardo de Brito, Stellan Ostlund, Henrik Johannesson

Abstract: Crossings of energy bands in solids that are not pinned at symmetry points in the Brillouin zone and yet cannot be removed by perturbations are thought to be conditioned on the presence of a nonsymmorphic symmetry. In this Letter we show that such band crossings can actually appear also in a symmorphic crystal. A study of a class of tight-binding multiband one-dimensional lattice models of spinful… ▽ More Crossings of energy bands in solids that are not pinned at symmetry points in the Brillouin zone and yet cannot be removed by perturbations are thought to be conditioned on the presence of a nonsymmorphic symmetry. In this Letter we show that such band crossings can actually appear also in a symmorphic crystal. A study of a class of tight-binding multiband one-dimensional lattice models of spinful electrons reveals that chiral, time-reversal and site-mirror symmetries are suffcient to produce such movable but not removable band degeneracies. △ Less

Submitted 18 December, 2018; v1 submitted 25 April, 2018; originally announced April 2018.

Comments: 11 pages (Paper plus Supplemental Material); 6 figures (4 in the Paper, 2 in the Supplemental Material); new Introduction, added references, revised text

Journal ref: Phys. Rev. B 98, 165127 (2018)

Anomalous Non-linear Optical Response Of Graphene Near Phonon Resonances

Authors: Lucas Lafetá, Alisson Cardore, Thiago G. Mendes Sá, Kenji Watanabe, Takashi Taniguchi, Leonardo C. Campos, Ado Jorio, Leandro M. Malard

Abstract: In this work we probe the third-order non-linear optical property of graphene, hexagonal boron nitride and their heterostructure by the use of coherent anti-Stokes Raman Spectroscopy. When the energy difference of the two input fields match the phonon energy, the anti-Stokes emission intensity is enhanced in h-BN, as usually expected while for graphene a anomalous decrease is observed. This behavi… ▽ More In this work we probe the third-order non-linear optical property of graphene, hexagonal boron nitride and their heterostructure by the use of coherent anti-Stokes Raman Spectroscopy. When the energy difference of the two input fields match the phonon energy, the anti-Stokes emission intensity is enhanced in h-BN, as usually expected while for graphene a anomalous decrease is observed. This behaviour can be understood in terms of q coupling between the electronic continuum and a discrete phonon state. We have also measured a graphene/h-BN heterostructure and demonstrate that the anomalous effect in graphene dominates the heterostructure optical response. △ Less

Submitted 31 January, 2017; originally announced January 2017.

Comments: 5 pages, 3 figures

Journal ref: Nano Letters 2017, 17, 6, 3447-3451

Synthesizing Majorana zero-energy modes in a periodically gated quantum wire

Authors: Mariana Malard, G. I. Japaridze, Henrik Johannesson

Abstract: We explore a scheme for engineering a one-dimensional spinless p-wave superconductor hosting unpaired Majorana zero-energy modes, using an all-electric setup with a spin-orbit coupled quantum wire in proximity to an s-wave superconductor. The required crossing of the Fermi level by a single spin-split energy band is ensured by employing a periodically modulated Rashba interaction, which, assisted… ▽ More We explore a scheme for engineering a one-dimensional spinless p-wave superconductor hosting unpaired Majorana zero-energy modes, using an all-electric setup with a spin-orbit coupled quantum wire in proximity to an s-wave superconductor. The required crossing of the Fermi level by a single spin-split energy band is ensured by employing a periodically modulated Rashba interaction, which, assisted by electron-electron interactions and a uniform Dresselhaus interaction, opens a gap at two of the spin-orbit shifted Fermi points. While an implementation in a hybrid superconductor-semiconductor device requires improvements upon present-day capabilities, a variant of our scheme where spin-orbit-coupled cold fermions are effectively proximity-coupled to a BEC reservoir of Feshbach molecules may provide a ready-to-use platform. △ Less

Submitted 24 June, 2016; v1 submitted 2 December, 2015; originally announced December 2015.

Comments: This is a revised and expanded version, with added figures and references; to appear soon in PRB. 16 pages, 7 figures

Journal ref: Phys. Rev. B 94, 115128 (2016)

Synthetic helical liquid in a quantum wire

Authors: George I. Japaridze, Henrik Johannesson, Mariana Malard

Abstract: We show that the combination of a Dresselhaus interaction and a spatially periodic Rashba interaction leads to the formation of a helical liquid in a quantum wire when the electron-electron interaction is weakly screened. The effect is sustained by a helicity-dependent effective band gap which depends on the size of the Dresselhaus and Rashba spin-orbit couplings. We propose a design for a semicon… ▽ More We show that the combination of a Dresselhaus interaction and a spatially periodic Rashba interaction leads to the formation of a helical liquid in a quantum wire when the electron-electron interaction is weakly screened. The effect is sustained by a helicity-dependent effective band gap which depends on the size of the Dresselhaus and Rashba spin-orbit couplings. We propose a design for a semiconductor device in which the helical liquid can be realized and probed experimentally. △ Less

Submitted 4 June, 2014; v1 submitted 19 November, 2013; originally announced November 2013.

Journal ref: Physical Review B 89, 201403(R), 2014

Observation of Intense Second Harmonic Generation from MoS$_{2}$ Atomic Crystals

Authors: Leandro M. Malard, Thonimar V. Alencar, Ana Paula M. Barboza, Kin Fai Mak, Ana M. de Paula

Abstract: Since de discovery of graphene, the family of 2-dimensional materials has attracted much recent attention. In this work, the nonlinear optical properties of few-layer MoS2 two-dimensional crystals are studied using femtosecond laser pulses. We observed highly efficient second harmonic generation from the odd-layer crystals, which shows a polarization intensity dependence that directly reveals the… ▽ More Since de discovery of graphene, the family of 2-dimensional materials has attracted much recent attention. In this work, the nonlinear optical properties of few-layer MoS2 two-dimensional crystals are studied using femtosecond laser pulses. We observed highly efficient second harmonic generation from the odd-layer crystals, which shows a polarization intensity dependence that directly reveals the underlying symmetry and orientation of the crystal. Additionally, the measured second-order susceptibility spectra provide information about the electronic structure of the material. Our results open up new opportunities for studying the non-linear optical properties in these novel 2D crystals. △ Less

Submitted 15 April, 2013; originally announced April 2013.

Comments: 5 pages, 3 figures

Journal ref: Phys. Rev. B 87, 201401(R) (2013)

Observation of out-of-plane vibrations in few-layer graphene

Authors: Chun Hung Lui, Leandro M. Malard, SukHyun Kim, Gabriel Lantz, François E. Laverge, Riichiro Saito, Tony F. Heinz

Abstract: We report the observation of layer breathing mode (LBM) vibrations in few-layer graphene (FLG) samples of thickness from 2 to 6 layers, exhibiting both Bernal (AB) and rhombohedral (ABC) stacking order. The LBM vibrations are identified using a Raman combination band lying around 1720 cm-1. From double resonance theory, we identify the feature as the LOZO' combination mode of the out-of-plane LBM… ▽ More We report the observation of layer breathing mode (LBM) vibrations in few-layer graphene (FLG) samples of thickness from 2 to 6 layers, exhibiting both Bernal (AB) and rhombohedral (ABC) stacking order. The LBM vibrations are identified using a Raman combination band lying around 1720 cm-1. From double resonance theory, we identify the feature as the LOZO' combination mode of the out-of-plane LBM (ZO') and the in-plane longitudinal optical mode (LO). The LOZO' Raman band is found to exhibit multiple peaks, with a unique line shape for each layer thickness and stacking order. These complex line shapes of the LOZO'-mode arise both from the material-dependent selection of different phonons in the double-resonance Raman process and from the detailed structure of the different branches of LBM in FLG. △ Less

Submitted 7 April, 2012; originally announced April 2012.

Comments: 17 pages, 7 figures, supplemental material included

Journal ref: Nano Letters, 12, 5539 (2012)

Sine-Gordon Model - Renormalization Group Solutions and Applications

Authors: Mariana Malard

Abstract: The sine-Gordon model is discussed and analyzed within the framework of the renormalization group theory. A perturbative renormalization group procedure is carried out through a decomposition of the sine-Gordon field in slow and fast modes. An effective slow modes's theory is derived and re-scaled to obtain the model's flow equations. The resulting Kosterlitz-Thouless phase diagram is obtained and… ▽ More The sine-Gordon model is discussed and analyzed within the framework of the renormalization group theory. A perturbative renormalization group procedure is carried out through a decomposition of the sine-Gordon field in slow and fast modes. An effective slow modes's theory is derived and re-scaled to obtain the model's flow equations. The resulting Kosterlitz-Thouless phase diagram is obtained and discussed in detail. The theory's gap is estimated in terms of the sine-Gordon model paramaters. The mapping between the sine-Gordon model and models for interacting electrons in one dimension, such as the g-ology model and Hubbard model, is discussed and the previous renormalization group results, obtained for the sine-Gordon model, are thus borrowed to describe different aspects of Luttinger liquid systems, such as the nature of its excitations and phase transitions. The calculations are carried out in a thorough and pedagogical manner, aiming the reader with no previous experience with the sine-Gordon model or the renormalization group approach. △ Less

Submitted 15 February, 2012; originally announced February 2012.

Comments: 44 pages, 7 figures

Modulated Rashba interaction in a quantum wire: Spin and charge dynamics

Authors: Mariana Malard, Inna Grusha, G. I. Japaridze, Henrik Johannesson

Abstract: It was recently shown that a spatially modulated Rashba spin-orbit coupling in a quantum wire drives a transition from a metallic to an insulating state when the wave number of the modulation becomes commensurate with the Fermi wave length of the electrons in the wire. It was suggested that the effect may be put to practical use in a future spin transistor design. In the present article we revisit… ▽ More It was recently shown that a spatially modulated Rashba spin-orbit coupling in a quantum wire drives a transition from a metallic to an insulating state when the wave number of the modulation becomes commensurate with the Fermi wave length of the electrons in the wire. It was suggested that the effect may be put to practical use in a future spin transistor design. In the present article we revisit the problem and present a detailed analysis of the underlying physics. First, we explore how the build-up of charge density wave correlations in the quantum wire due to the periodic gate configuration that produces the Rashba modulation influences the transition to the insulating state. The interplay between the modulations of the charge density and that of the spin-orbit coupling turns out to be quite subtle: Depending on the relative phase between the two modulations, the joint action of the Rashba interaction and charge density wave correlations may either enhance or reduce the Rashba current blockade effect. Secondly, we inquire about the role of the Dresselhaus spin-orbit coupling that is generically present in a quantum wire embedded in semiconductor heterostructure. While the Dresselhaus coupling is found to work against the current blockade of the insulating state, the effect is small in most materials. Using an effective field theory approach, we also carry out an analysis of effects from electron- electron interactions, and show how the single-particle gap in the insulating state can be extracted from the more easily accessible collective charge and spin excitation thresholds. The smallness of the single-particle gap together with the anti-phase relation between the Rashba and chemical potential modulations pose serious difficulties for realizing a Rashba-controlled current switch in an InAs-based device. Some alternative designs are discussed. △ Less

Submitted 1 September, 2011; v1 submitted 18 May, 2011; originally announced May 2011.

Comments: 20 pages, 6 figures

Journal ref: Phys. Rev. B 84, 075466 (2011)

Characterizing top gated bilayer graphene interaction with its environment by Raman spectroscopy

Authors: D. L. Mafra, P. Gava, L. M. Malard, R. S. Borges, G. G. Silva, J. A. Leon, F. Plentz, F. Mauri, M. A. Pimenta

Abstract: In this work we study the behavior of the optical phonon modes in bilayer graphene devices by applying top gate voltage, using Raman scattering. We observe the splitting of the Raman G band as we tune the Fermi level of the sample, which is explained in terms of mixing of the Raman (Eg) and infrared (Eu) phonon modes, due to different doping in the two layers. We theoretically analyze our data in… ▽ More In this work we study the behavior of the optical phonon modes in bilayer graphene devices by applying top gate voltage, using Raman scattering. We observe the splitting of the Raman G band as we tune the Fermi level of the sample, which is explained in terms of mixing of the Raman (Eg) and infrared (Eu) phonon modes, due to different doping in the two layers. We theoretically analyze our data in terms of the bilayer graphene phonon self-energy which includes non-homogeneous charge carrier doping between the graphene layers. We show that the comparison between the experiment and theoretical model not only gives information about the total charge concentration in the bilayer graphene device, but also allows to separately quantify the amount of unintentional charge coming from the top and the bottom of the system, and therefore to characterize the interaction of bilayer graphene with its surrounding environment. △ Less

Submitted 19 April, 2011; originally announced April 2011.

Journal ref: Carbon, vol. 50, issue 10, pages 3435-9 (2012)

Observation of Intra- and Inter-band Transitions in the Optical Response of Graphene

Authors: Leandro M. Malard, Kin Fai Mak, A. H. Castro Neto, N. M. R. Peres, Tony F. Heinz

Abstract: The optical conductivity of freely suspended graphene was examined under non-equilibrium conditions using femtosecond pump-probe spectroscopy. We observed a conductivity transient that varied strongly with the electronic temperature, exhibiting a crossover from enhanced to decreased absorbance with increasing pump fluence. The response arises from a combination of bleaching of the inter-band trans… ▽ More The optical conductivity of freely suspended graphene was examined under non-equilibrium conditions using femtosecond pump-probe spectroscopy. We observed a conductivity transient that varied strongly with the electronic temperature, exhibiting a crossover from enhanced to decreased absorbance with increasing pump fluence. The response arises from a combination of bleaching of the inter-band transitions by Pauli blocking and induced absorption from the intra-band transitions of the carriers. The latter dominates at low electronic temperature, but, despite an increase in Drude scattering rate, is overwhelmed by the former at high electronic temperature. The time-evolution of the optical conductivity in all regimes can described in terms of a time-varying electronic temperature. △ Less

Submitted 15 April, 2011; originally announced April 2011.

Comments: 10 pages (4 pages manuscript + Supplemental Info.)

Journal ref: New Journal of Physics, v. 15, p. 015009, 2013

Observation of the Kohn anomaly near the K point of bilayer graphene

Authors: D. L. Mafra, L. M. Malard, S. K. Doorn, H. Htoon, J. Nilsson, A. H. Castro Neto, M. A. Pimenta

Abstract: The dispersion of electrons and phonons near the K point of bilayer graphene was investigated in a resonant Raman study using different laser excitation energies in the near infrared and visible range. The electronic structure was analyzed within the tight-binding approximation, and the Slonczewski-Weiss-McClure (SWM) parameters were obtained from the analysis of the dispersive behavior of the R… ▽ More The dispersion of electrons and phonons near the K point of bilayer graphene was investigated in a resonant Raman study using different laser excitation energies in the near infrared and visible range. The electronic structure was analyzed within the tight-binding approximation, and the Slonczewski-Weiss-McClure (SWM) parameters were obtained from the analysis of the dispersive behavior of the Raman features. A softening of the phonon branches was observed near the K point, and results evidence the Kohn anomaly and the importance of considering electron-phonon and electron-electron interactions to correctly describe the phonon dispersion in graphene systems. △ Less

Submitted 19 July, 2009; originally announced July 2009.

Comments: 4 pages, 4 figures

Journal ref: Phys. Rev. B 80, 241414(R) (2009)

A Scaling Approach for Interacting Quantum Wires -a Possible Explanation for the 0.7 Anomalous Conductance

Authors: D. Schmeltzer, A. Kuklov, M. Malard

Abstract: We consider a weakly interacting finite wire with short and long range interactions. The long range interactions enhance the $4k_{F}$ scattering and renormalize the wire to a strongly interacting limit. For large screening lengths, the renormalized charge stiffness Luttinger parameter $K_{eff.}$ decreases to $K_{eff.}< {1/2}$, giving rise to a Wigner crystal at T=0 with an anomalous conductance… ▽ More We consider a weakly interacting finite wire with short and long range interactions. The long range interactions enhance the $4k_{F}$ scattering and renormalize the wire to a strongly interacting limit. For large screening lengths, the renormalized charge stiffness Luttinger parameter $K_{eff.}$ decreases to $K_{eff.}< {1/2}$, giving rise to a Wigner crystal at T=0 with an anomalous conductance at finite temperatures. For short screening lengths, the renormalized Luttinger parameter $K_{eff.}$ is restricted to ${1/2}\leq K_{eff.}\leq 1$. As a result, at temperatures larger than the magnetic exchange energy we find an interacting metal which for $K_{eff.}\approx {1/2}$ is equivalent to the Hubbard $U\to\infty$ model, with the anomalous conductance $G\approx\frac{e^2}{h}$ . △ Less

Submitted 25 December, 2009; v1 submitted 13 March, 2009; originally announced March 2009.

Comments: 26 pages and 6 figures

Group theory analysis of electrons and phonons in N-layer graphene systems

Authors: L. M. Malard, D. L. Mafra, M. H. D. Guimarães, M. S. C. Mazzoni, A. Jorio

Abstract: In this work we study the symmetry properties of electrons and phonons in graphene systems as function of the number of layers. We derive the selection rules for the electron-radiation and for the electron-phonon interactions at all points in the Brillouin zone. By considering these selection rules, we address the double resonance Raman scattering process. The monolayer and bilayer graphene in t… ▽ More In this work we study the symmetry properties of electrons and phonons in graphene systems as function of the number of layers. We derive the selection rules for the electron-radiation and for the electron-phonon interactions at all points in the Brillouin zone. By considering these selection rules, we address the double resonance Raman scattering process. The monolayer and bilayer graphene in the presence of an applied electric field are also discussed. △ Less

Submitted 6 December, 2008; originally announced December 2008.

Comments: 8 pages, 6 figures

Journal ref: Phys. Rev. B 79, 125426 (2009)

Observation of Distinct Electron-Phonon Couplings in Gated Bilayer Graphene

Authors: L. M. Malard, D. C. Elias, E. S. Alves, M. A. Pimenta

Abstract: A Raman study of a back gated bilayer graphene sample is presented. The changes in the Fermi level induced by charge transfer splits the Raman G-band, hardening its higher component and softening the lower one. These two components are associated with the symmetric (S) and anti-symmetric vibration (AS) of the atoms in the two layers, the later one becoming Raman active due to inversion symmetry… ▽ More A Raman study of a back gated bilayer graphene sample is presented. The changes in the Fermi level induced by charge transfer splits the Raman G-band, hardening its higher component and softening the lower one. These two components are associated with the symmetric (S) and anti-symmetric vibration (AS) of the atoms in the two layers, the later one becoming Raman active due to inversion symmetry breaking. The phonon hardening and softening are explained by considering the selective coupling of the S and AS phonons with interband and intraband electron-hole pairs. △ Less

Submitted 18 August, 2008; originally announced August 2008.

Comments: 4 pages, 4 figures

Journal ref: Phys. Rev. Lett. 101, 257401 (2008)

Probing the Electronic Structure of Bilayer Graphene by Raman Scattering

Authors: L. M. Malard, J. Nilsson, D. C. Elias, J. C. Brant, F. Plentz, E. S. Alves, A. H. Castro Neto, M. A. Pimenta

Abstract: The electronic structure of bilayer graphene is investigated from a resonant Raman study using different laser excitation energies. The values of the parameters of the Slonczewski-Weiss-McClure model for graphite are measured experimentally and some of them differ significantly from those reported previously for graphite, specially that associated with the difference of the effective mass of ele… ▽ More The electronic structure of bilayer graphene is investigated from a resonant Raman study using different laser excitation energies. The values of the parameters of the Slonczewski-Weiss-McClure model for graphite are measured experimentally and some of them differ significantly from those reported previously for graphite, specially that associated with the difference of the effective mass of electrons and holes. The splitting of the two TO phonon branches in bilayer graphene is also obtained from the experimental data. Our results have implications for bilayer graphene electronic devices. △ Less

Submitted 9 August, 2007; originally announced August 2007.

Comments: 4 pages, 4 figures

Journal ref: Phys. Rev. B 76, 201401(R) (2007)