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Bi monocrystal formation on InAs(111)A and B substrates
Authors:
L. Nicolaï,
J. -M. Mariot,
U. Djukic,
W. Wang,
O. Heckmann,
M. C. Richter,
J. Kanski,
M. Leandersson,
J. Sadowski,
T. Balasubramanian,
I. Vobornik,
J. Fujii,
J. Braun,
H. Ebert,
J. Minár,
K. Hricovini
Abstract:
The growth of Bi films deposited on both A and B faces of InAs(111) has been investigated by low-energy electron diffraction, scanning tunneling microscopy, and photoelectron spectroscopy using synchrotron radiation. The changes upon Bi deposition of the In 4d and Bi 5d5/2 photoelectron signals allow to get a comprehensive picture of the Bi/InAs(1 1 1) interface. From the initial stages the Bi gro…
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The growth of Bi films deposited on both A and B faces of InAs(111) has been investigated by low-energy electron diffraction, scanning tunneling microscopy, and photoelectron spectroscopy using synchrotron radiation. The changes upon Bi deposition of the In 4d and Bi 5d5/2 photoelectron signals allow to get a comprehensive picture of the Bi/InAs(1 1 1) interface. From the initial stages the Bi growth on the A face (In-terminated InAs) is epitaxial, contrary to that on the B face (As- terminated InAs) that proceeds via the formation of islands. Angle-resolved photoelectron spectra show that the electronic structure of a $\approx 10$~BL deposit on the A face is identical to that of bulk Bi, while more than $\approx 30$ BL are needed for the B face. Both bulk and surface states are well accounted for by fully relativistic ab initio spin-resolved photoemission calculations.
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Submitted 1 July, 2018;
originally announced July 2018.
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A topological material in the III-V family: heteroepitaxial InBi on InAs
Authors:
Laurent Nicolaï,
Ján Minár,
Maria Christine Richter,
Uros Djukic,
Olivier Heckmann,
Jean-Michel Mariot,
Johan Adell,
Mats Leandersson,
Janusz Sadowski,
Jürgen Braun,
Hubert Ebert,
Jonathan D. Denlinger,
Ivana Vobornik,
Jun Fujii,
Pavol Šutta,
Gavin R. Bell,
Martin Gmitra,
Karol Hricovini
Abstract:
InBi(001) is formed epitaxially on InAs(111)-A by depositing Bi on to an In-rich surface. Angle-resolved photoemission measurements reveal topological electronic surface states, close to the M bar high symmetry point. This demonstrates a heteroepitaxial system entirely in the III-V family with topological electronic properties. InBi shows coexistence of Bi and In surface terminations, in contradic…
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InBi(001) is formed epitaxially on InAs(111)-A by depositing Bi on to an In-rich surface. Angle-resolved photoemission measurements reveal topological electronic surface states, close to the M bar high symmetry point. This demonstrates a heteroepitaxial system entirely in the III-V family with topological electronic properties. InBi shows coexistence of Bi and In surface terminations, in contradiction with other III-V materials. For the Bi termination, the study gives a consistent physical picture of the topological surface electronic structure of InBi(001) terminated by a Bi bilayer rather than a surface formed by splitting to a Bi monolayer termination. Theoretical calculations based on relativistic density functional theory and the one-step model of photoemission clarify the relationship between the InBi(001) surface termination and the topological surface states, supporting a predominant role of the Bi bilayer termination. Furthermore, a tight-binding model based on this Bi bilayer termination with only Bi-Bi hopping terms, and no Bi-In interaction, gives a deeper insight into the spin texture.
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Submitted 31 July, 2024; v1 submitted 8 June, 2018;
originally announced June 2018.
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Strong Resonances of Quasi 1D Structures at the Bi/InAs(100) Surface
Authors:
Olivier Heckmann,
Maria Christine Richter,
Jean-Michel Mariot,
Laurent Nicolaï,
Ivana Vobornik,
Weimin Wang,
Uros Djukic,
Karol Hricovini
Abstract:
Thin Bi films are interesting candidates for spintronic applications due to a large spin-orbit splitting that, combined with the loss of inversion symmetry at the surface, results in a band structure that is not spin-degenerate. In recent years, applications for topological insulators based on Bi and Bi alloys have as well attracted much attention. Here we present ARPES studies of Bi/InAs(100) int…
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Thin Bi films are interesting candidates for spintronic applications due to a large spin-orbit splitting that, combined with the loss of inversion symmetry at the surface, results in a band structure that is not spin-degenerate. In recent years, applications for topological insulators based on Bi and Bi alloys have as well attracted much attention. Here we present ARPES studies of Bi/InAs(100) interface. Bismuth deposition followed by annealing of the surface results in the formation of one full Bi monolayer decorated by Bi-nanolines. We found that the building up of the interface does affect the electronic structure of the substrate. As a consequence of weak interaction, bismuth states are placed in the gaps of the electronic structure of InAs(100). We observe a strong resonance of the Bi electronic states close to the Fermi level; its intensity depends on the photon energy and the photon polarization. These states show nearly no dispersion when measured perpendicular to the nanolines, confirming their one-dimensionality.
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Submitted 23 June, 2018; v1 submitted 4 June, 2018;
originally announced June 2018.
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Distinctive Picosecond Spin Polarization Dynamics in Bulk Half-Metals
Authors:
M. Battiato,
J. Minar,
W. Wang,
W. Ndiaye,
M. C. Richter,
O. Heckmann,
J. -M. Mariot,
F. Parmigiani,
K. Hricovini,
C. Cacho
Abstract:
Femtosecond laser excitations in half-metal (HM) compounds are theoretically predicted to induce an exotic picosecond spin dynamics. In particular, conversely to what is observed in conventional metals and semiconductors, the thermalization process in HMs leads to a long living partially thermalized configuration characterized by three Fermi--Dirac distributions for the minority, majority conducti…
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Femtosecond laser excitations in half-metal (HM) compounds are theoretically predicted to induce an exotic picosecond spin dynamics. In particular, conversely to what is observed in conventional metals and semiconductors, the thermalization process in HMs leads to a long living partially thermalized configuration characterized by three Fermi--Dirac distributions for the minority, majority conduction and majority valence electrons respectively. Remarkably, these distributions have the same temperature but different chemical potentials. This unusual thermodynamics state causes a persistent non-equilibrium spin polarization only well above the Fermi energy. Femtosecond spin dynamics experiments performed on Fe$_3$O$_4$ by time-, spin-, and angle-resolved photoelectron spectroscopy confirm our model. Furthermore, the spin polarization response proves to be very robust and it can be adopted to selectively test the bulk HM character in a wide range of compounds.
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Submitted 28 February, 2018;
originally announced February 2018.
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Hard x-ray spectroscopy in NaxCoO2 and superconducting NaxCoO2 - yH2O: A view on the bulk Co electronic properties
Authors:
Philippe Leininger,
J. -P. Rueff,
J. -M. Mariot,
A. Yaresko,
O. Proux,
J. -L. Hazemann,
G. Vanko,
T. Sasaki,
H. Ishii
Abstract:
The electronic properties of Co in bulk Na0.7CoO2 and the superconducting hydrated compound Na0.35CoO2 - y H2O have been investigated by x-ray absorption spectroscopy (XAS) and resonant inelastic x-ray scattering (RIXS) using hard x-rays. The XAS spectra at the Co K-edge were measured in both compounds with two different polarization directions. The changes in the XAS spectra upon hydration and…
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The electronic properties of Co in bulk Na0.7CoO2 and the superconducting hydrated compound Na0.35CoO2 - y H2O have been investigated by x-ray absorption spectroscopy (XAS) and resonant inelastic x-ray scattering (RIXS) using hard x-rays. The XAS spectra at the Co K-edge were measured in both compounds with two different polarization directions. The changes in the XAS spectra upon hydration and their polarization dependence are well accounted for by linear muffin- tin orbital calculations in the local density approximation. The underlying electronic structure indicates the strong hybridization between the Co 3d and O 2p states in both compounds, while the electron localization is enhanced in the hydrated compound due to the increase of the Co-Co interplanar distance. The Co K pre-edge further highlights the splitting of the d band as a result of the crystal field effect and demonstrates the Co valency increase when Na0.7CoO2 is hydrated. The RIXS spectra measured at the Co K-edge show an energy loss feature around 10 eV in both compounds in fair agreement with the calculated dynamical structure factor. The RIXS feature is associated to a damped plasmon excitation.
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Submitted 12 May, 2006;
originally announced May 2006.
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Probing the gamma-alpha Transition in Bulk Ce under Pressure: A Direct Investigation by Resonant Inelastic X-ray Scattering
Authors:
Jean-Pascal Rueff,
Jean-Paul Itié,
M. Taguchi,
C. F. Hague,
J. -M. Mariot,
R. Delaunay,
J. -P. Kappler,
N. Jaouen
Abstract:
We report on the most complete investigation to date of the 4f-electron properties at the gamma-alpha transition in elemental Ce by resonant inelastic x-ray scattering (RIXS). The Ce 2p3d-RIXS spectra were measured directly in the bulk material as a function of pressure through the transition. The spectra were simulated within the Anderson impurity model. The occupation number nf was derived fro…
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We report on the most complete investigation to date of the 4f-electron properties at the gamma-alpha transition in elemental Ce by resonant inelastic x-ray scattering (RIXS). The Ce 2p3d-RIXS spectra were measured directly in the bulk material as a function of pressure through the transition. The spectra were simulated within the Anderson impurity model. The occupation number nf was derived from the calculations in both gamma- and alpha-phases in the ground state along with the f doubleoccupancy. We find that the electronic structure changes result mainly from band formation of 4f electrons which concurs with reduced electron correlation and increased Kondo screening at high pressure.
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Submitted 7 February, 2006;
originally announced February 2006.
