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Controlled dynamic screening of excitonic complexes in 2D semiconductors
Authors:
Andrey R. Klots,
Benjamin Weintrub,
Dhiraj Prasai,
Daniel Kidd,
Kalman Varga,
Kirill A. Velizhanin,
Kirill I. Bolotin
Abstract:
We report a combined theoretical/experimental study of dynamic screening of excitons in media with frequency-dependent dielectric functions. We develop an analytical model showing that interparticle interactions in an exciton are screened in the range of frequencies from zero to the characteristic binding energy depending on the symmetries and transition energies of that exciton. The problem of th…
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We report a combined theoretical/experimental study of dynamic screening of excitons in media with frequency-dependent dielectric functions. We develop an analytical model showing that interparticle interactions in an exciton are screened in the range of frequencies from zero to the characteristic binding energy depending on the symmetries and transition energies of that exciton. The problem of the dynamic screening is then reduced to simply solving the Schrodinger equation with an effectively frequency-independent potential. Quantitative predictions of the model are experimentally verified using a test system: neutral, charged and defect-bound excitons in two-dimensional monolayer WS2, screened by metallic, liquid, and semiconducting environments. The screening-induced shifts of the excitonic peaks in photoluminescence spectra are in good agreement with our model.
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Submitted 14 March, 2017;
originally announced March 2017.
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Electrical control of near-field energy transfer between quantum dots and 2D semiconductors
Authors:
Dhiraj Prasai,
Andrey R. Klots,
A. K. M. Newaz,
J. Scott Niezgoda,
Noah J. Orfield,
Carlos A. Escobar,
Alex Wynn,
Anatoly Efimov,
G. Kane Jennings,
Sandra J. Rosenthal,
Kirill I. Bolotin
Abstract:
We investigate near-field energy transfer between chemically synthesized quantum dots (QDs) and two-dimensional semiconductors. We fabricate devices in which electrostatically gated semiconducting monolayer molybdenum disulfide (MoS2) is placed atop a homogenous self-assembled layer of core-shell CdSSe QDs. We demonstrate efficient non-radiative Förster resonant energy transfer (FRET) from QDs int…
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We investigate near-field energy transfer between chemically synthesized quantum dots (QDs) and two-dimensional semiconductors. We fabricate devices in which electrostatically gated semiconducting monolayer molybdenum disulfide (MoS2) is placed atop a homogenous self-assembled layer of core-shell CdSSe QDs. We demonstrate efficient non-radiative Förster resonant energy transfer (FRET) from QDs into MoS2 and prove that modest gate-induced variation in the excitonic absorption of MoS2 lead to large (~500%) changes in the FRET rate. This, in turn, allows for up to ~75% electrical modulation of QD photoluminescence intensity. The hybrid QD/MoS2 devices operate within a small voltage range, allow for continuous modification of the QD photoluminescence intensity, and can be used for selective tuning of QDs emitting in the visible-IR range.
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Submitted 15 June, 2015;
originally announced June 2015.
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Probing excitonic states in ultraclean suspended two-dimensional semiconductors by photocurrent spectroscopy
Authors:
A. R. Klots,
A. K. M. Newaz,
Bin Wang,
D. Prasai,
H. Krzyzanowska,
D. Caudel,
N. J. Ghimire,
J. Yan,
B. L. Ivanov,
K. A. Velizhanin,
A. Burger,
D. G. Mandrus,
N. H. Tolk,
S. T. Pantelides,
K. I. Bolotin
Abstract:
The optical response of semiconducting monolayer transition-metal dichalcogenides (TMDCs) is dominated by strongly bound excitons that are stable even at room temperature. However, substrate-related effects such as screening and disorder in currently available specimens mask many anticipated physical phenomena and limit device applications of TMDCs. Here, we demonstrate that that these undesirable…
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The optical response of semiconducting monolayer transition-metal dichalcogenides (TMDCs) is dominated by strongly bound excitons that are stable even at room temperature. However, substrate-related effects such as screening and disorder in currently available specimens mask many anticipated physical phenomena and limit device applications of TMDCs. Here, we demonstrate that that these undesirable effects are strongly suppressed in suspended devices. Extremely robust (photogain >1,000) and fast (response time <1ms) photoresponse combined with the high quality of our devices allow us to study, for the first time, the formation, binding energies, and dissociation mechanisms of excitons in TMDCs through photocurrent spectroscopy. By analyzing the spectral positions of peaks in the photocurrent and by comparing them with first-principles calculations, we obtain binding energies, band gaps and spin-orbit splitting in monolayer TMDCs. For monolayer MoS2, in particular, we estimate an extremely large binding energy for band-edge excitons, Ebind > 570meV. Along with band-edge excitons, we observe excitons associated with a van Hove singularity of rather unique nature. The analysis of the source-drain voltage dependence of photocurrent spectra reveals exciton dissociation and photoconversion mechanisms in TMDCs.
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Submitted 25 March, 2014;
originally announced March 2014.
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Electrical Control of Optical Properties of Monolayer MoS$_2$
Authors:
A. K. M. Newaz,
D. Prasai,
J. I. Ziegler,
D. Caudel,
S. Robinson,
R. F. Haglund Jr,
K. I. Bolotin
Abstract:
We investigate electrical gating of photoluminescence and optical absorption in monolayer molybdenum disulfide (MoS$_2$) configured in field effect transistor geometry. We observe an hundredfold increase in photoluminescence intensity and an increase in absorption at ~660 nm in these devices when an external gate voltage is decreased from +50 V to -50 V, while the photoluminescence wavelength rema…
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We investigate electrical gating of photoluminescence and optical absorption in monolayer molybdenum disulfide (MoS$_2$) configured in field effect transistor geometry. We observe an hundredfold increase in photoluminescence intensity and an increase in absorption at ~660 nm in these devices when an external gate voltage is decreased from +50 V to -50 V, while the photoluminescence wavelength remains nearly constant. In contrast, in bilayer MoS$_2$ devices we observe almost no changes in photoluminescence with gate voltage. We propose that the differing responses of the monolayer and bilayer devices are related to the interaction of the excitons in MoS$_2$ with charge carriers.
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Submitted 1 November, 2012;
originally announced November 2012.
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Graphene Transistor as a Probe for Streaming Potential
Authors:
A. K. M. Newaz,
D. A. Markov,
D. Prasai,
K. I. Bolotin
Abstract:
We explore the dependence of electrical transport in a graphene field effect transistor (GraFET) on the flow of the liquid within the immediate vicinity of that transistor. We find large and reproducible shifts in the charge neutrality point of GraFETs that are dependent on the fluid velocity and the ionic concentration. We show that these shifts are consistent with the variation of the local elec…
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We explore the dependence of electrical transport in a graphene field effect transistor (GraFET) on the flow of the liquid within the immediate vicinity of that transistor. We find large and reproducible shifts in the charge neutrality point of GraFETs that are dependent on the fluid velocity and the ionic concentration. We show that these shifts are consistent with the variation of the local electrochemical potential of the liquid next to graphene that are caused by the fluid flow (streaming potential). Furthermore, we utilize the sensitivity of electrical transport in GraFETs to the parameters of the fluid flow to demonstrate graphene-based mass flow and ionic concentration sensing. We successfully detect a flow as small as~70nL/min, and detect a change in the ionic concentration as small as ~40nM.
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Submitted 15 February, 2012;
originally announced February 2012.
