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Kinetic control of ferroelectricity in ultrathin epitaxial Barium Titanate capacitors
Authors:
Harish Kumarasubramanian,
Prasanna Venkat Ravindran,
Ting-Ran Liu,
Taeyoung Song,
Mythili Surendran,
Huandong Chen,
Pratyush Buragohain,
I-Cheng Tung,
Arnab Sen Gupta,
Rachel Steinhardt,
Ian A. Young,
Yu-Tsun Shao,
Asif Islam Khan,
Jayakanth Ravichandran
Abstract:
Ferroelectricity is characterized by the presence of spontaneous and switchable macroscopic polarization. Scaling limits of ferroelectricity have been of both fundamental and technological importance, but the probes of ferroelectricity have often been indirect due to confounding factors such as leakage in the direct electrical measurements. Recent interest in low-voltage switching electronic devic…
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Ferroelectricity is characterized by the presence of spontaneous and switchable macroscopic polarization. Scaling limits of ferroelectricity have been of both fundamental and technological importance, but the probes of ferroelectricity have often been indirect due to confounding factors such as leakage in the direct electrical measurements. Recent interest in low-voltage switching electronic devices squarely puts the focus on ultrathin limits of ferroelectricity in an electronic device form, specifically on the robustness of ferroelectric characteristics such as retention and endurance for practical applications. Here, we illustrate how manipulating the kinetic energy of the plasma plume during pulsed laser deposition can yield ultrathin ferroelectric capacitor heterostructures with high bulk and interface quality, significantly low leakage currents and a broad "growth window". These heterostructures venture into previously unexplored aspects of ferroelectric properties, showcasing ultralow switching voltages ($<$0.3 V), long retention times ($>$10$^{4}$s), and high endurance ($>$10$^{11}$cycles) in 20 nm films of the prototypical perovskite ferroelectric, BaTiO$_{3}$. Our work demonstrates that materials engineering can push the envelope of performance for ferroelectric materials and devices at the ultrathin limit and opens a direct, reliable and scalable pathway to practical applications of ferroelectrics in ultralow voltage switches for logic and memory technologies.
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Submitted 18 July, 2024;
originally announced July 2024.
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Quantum phase transition in ferroelectric-paraelectric heterostructures
Authors:
Prasanna Venkatesan Ravindran,
Asif Islam Khan
Abstract:
Phase transition between ferroelectricity and quantum paraelectricity via non-thermal tuning parameters can lead to quantum critical behavior and associated emergent phenomena. Ferroelectric quantum critical systems are, however, rare despite the abundance of ferroelectric materials. Here, we show theoretically that in ferroelectric-paraelectric heterostructures, it is plausible to induce quantum…
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Phase transition between ferroelectricity and quantum paraelectricity via non-thermal tuning parameters can lead to quantum critical behavior and associated emergent phenomena. Ferroelectric quantum critical systems are, however, rare despite the abundance of ferroelectric materials. Here, we show theoretically that in ferroelectric-paraelectric heterostructures, it is plausible to induce quantum paraelectricity where the quantum temperature (i.e., the temperature below with the onset of ferroelectricity is suppressed by quantum fluctuations) can be tuned by the thickness ratio. This, in turn, can effect a quantum phase transition between effective ferroelectric and quantum paraelectric states, using the thickness ratio as the tuning parameter. The associated quantum critical region offers unexpected prospects in the field of ferroelectric quantum criticality.
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Submitted 3 March, 2022;
originally announced March 2022.
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Antiferroelectric negative capacitance from a structural phase transition in zirconia
Authors:
Michael Hoffmann,
Zheng Wang,
Nujhat Tasneem,
Ahmad Zubair,
Prasanna Venkat Ravindran,
Mengkun Tian,
Anthony Gaskell,
Dina Triyoso,
Steven Consiglio,
Kanda Tapily,
Robert Clark,
Jae Hur,
Sai Surya Kiran Pentapati,
Milan Dopita,
Shimeng Yu,
Winston Chern,
Josh Kacher,
Sebastian E. Reyes-Lillo,
Dimitri Antoniadis,
Jayakanth Ravichandran,
Stefan Slesazeck,
Thomas Mikolajick,
Asif Islam Khan
Abstract:
Crystalline materials with broken inversion symmetry can exhibit a spontaneous electric polarization, which originates from a microscopic electric dipole moment. Long-range polar or anti-polar order of such permanent dipoles gives rise to ferroelectricity or antiferroelectricity, respectively. However, the recently discovered antiferroelectrics of fluorite structure (HfO$_2$ and ZrO$_2$) are diffe…
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Crystalline materials with broken inversion symmetry can exhibit a spontaneous electric polarization, which originates from a microscopic electric dipole moment. Long-range polar or anti-polar order of such permanent dipoles gives rise to ferroelectricity or antiferroelectricity, respectively. However, the recently discovered antiferroelectrics of fluorite structure (HfO$_2$ and ZrO$_2$) are different: A non-polar phase transforms into a polar phase by spontaneous inversion symmetry breaking upon the application of an electric field. Here, we show that this structural transition in antiferroelectric ZrO$_2$ gives rise to a negative capacitance, which is promising for overcoming the fundamental limits of energy efficiency in electronics. Our findings provide insight into the thermodynamically 'forbidden' region of the antiferroelectric transition in ZrO$_2$ and extend the concept of negative capacitance beyond ferroelectricity. This shows that negative capacitance is a more general phenomenon than previously thought and can be expected in a much broader range of materials exhibiting structural phase transitions.
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Submitted 21 April, 2021;
originally announced April 2021.
