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Martensite structures and twinning in substrate-constrained epitaxial Ni-Mn-Ga films deposited by a magnetron co-sputtering process
Authors:
Jérémy Tillier,
Daniel Bourgault,
Sébastien Pairis,
Luc Ortega,
Nathalie Caillault,
Laurent Carbone
Abstract:
In order to obtain Ni-Mn-Ga epitaxial films crystallized in martensite structures showing Magnetic-Induced Rearrangement (MIR) of martensite variants, a fine control of the composition is required. Here we present how the co-sputtering process might be helpful in the development of Ni-Mn-Ga epitaxial films. A batch of epitaxial Ni-Mn-Ga films deposited by co-sputtering of a Ni-Mn-Ga ternary target…
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In order to obtain Ni-Mn-Ga epitaxial films crystallized in martensite structures showing Magnetic-Induced Rearrangement (MIR) of martensite variants, a fine control of the composition is required. Here we present how the co-sputtering process might be helpful in the development of Ni-Mn-Ga epitaxial films. A batch of epitaxial Ni-Mn-Ga films deposited by co-sputtering of a Ni-Mn-Ga ternary target and a pure manganese target has been studied. The co-sputtering process allows a precise control of the film compositions and enables keeping the epitaxial growth of Ni-Mn-Ga austenite during deposition at high temperature. It gives rise to tune the content of the MIR-active 14-modulated martensite in the film at room temperature, as well as micro and macro-twinned domains sizes.
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Submitted 17 January, 2011;
originally announced January 2011.
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Ni-Mn-Ga films in the austenite and the martensite structures at room temperature: Uniaxial texturation and epitaxial growth
Authors:
Jérémy Tillier,
Antinéa Einig,
Daniel Bourgault,
Philippe Odier,
Luc Ortega,
Sébastien Pairis,
Laureline Porcar,
Paul Chometon,
Nathalie Caillault,
Laurent Carbone
Abstract:
Ni-Mn-Ga films in the austenite and the martensite structures at room temperature have been obtained using the DC magnetron sputtering technique. Two elaboration processes were studied. A first batch of samples was deposited using a resist sacrificial layer in order to release the film from the substrate before vacuum annealing. This process leads to polycrystalline films with a strong (022) fiber…
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Ni-Mn-Ga films in the austenite and the martensite structures at room temperature have been obtained using the DC magnetron sputtering technique. Two elaboration processes were studied. A first batch of samples was deposited using a resist sacrificial layer in order to release the film from the substrate before vacuum annealing. This process leads to polycrystalline films with a strong (022) fiber texture. The martensitic phase transformation of such polycrystalline freestanding films has been studied by optical and scanning electron microscopy. A second batch of samples was grown epitaxially on (100)MgO substrates using different deposition temperatures. The texture has been analyzed with four-circle X-ray diffraction. Epitaxial films crystallized both in the austenite and the martensite structures at room temperature have been studied.
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Submitted 14 January, 2011;
originally announced January 2011.
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Fabrication and characterization of a Ni-Mn-Ga uniaxially textured freestanding film deposited by DC magnetron sputtering
Authors:
Jérémy Tillier,
Daniel Bourgault,
Bernard Barbara,
Sébastien Pairis,
Laureline Porcar,
Paul Chometon,
Didier Dufeu,
Nathalie Caillault,
Laurent Carbone
Abstract:
Homogeneous freestanding films have been obtained by the direct current (DC) magnetron sputtering technique using a sacrificial layer. After annealing, the films are crystallized with a strong out-of-plane texture along the (022) direction. The stoichiometry of the annealed films is close to the target composition and leads to a martensitic transformation around 255K. The annealed films demonstrat…
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Homogeneous freestanding films have been obtained by the direct current (DC) magnetron sputtering technique using a sacrificial layer. After annealing, the films are crystallized with a strong out-of-plane texture along the (022) direction. The stoichiometry of the annealed films is close to the target composition and leads to a martensitic transformation around 255K. The annealed films demonstrate ferromagnetic behavior with a Curie temperature of about 362K. The magnetization process has been studied on the both states and during the martensitic transition. The saturation magnetizations have been determined by fitting the experimental data with a saturation approach law in the range 1-5T. Results show the saturation magnetization of the martensite is around 10% higher than that of the austenite. A model based on intrinsic magnetic properties of each state allowing the description of the magnetization M=f (H, T) of such polycrystalline films during the martensitic transformation is presented. The mass fraction of martensite inside the austenite phase can be determined using this model. The shape memory effect is analyzed both by scanning electron microscopy and by optical microscopy with in-situ measurement of the resistance temperature dependence.
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Submitted 13 November, 2010;
originally announced November 2010.
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Tuning macro-twinned domain sizes and the b-variants content of the adaptive 14-modulated martensite in epitaxial Ni-Mn-Ga films by co-sputtering
Authors:
Jérémy Tillier,
Daniel Bourgault,
Philippe Odier,
Luc Ortega,
Sébastien Pairis,
Olivier Fruchart,
Nathalie Caillault,
Laurent Carbone
Abstract:
In order to obtain modulated-martensite in our epitaxial Ni-Mn-Ga films, we have tuned the composition by using a co-sputtering process. Here we present how the composition affects the variant distribution of the 14-modulated martensite at room temperature. The nature of such modulated-martensites is still strongly debated for magnetic shape memory alloys. It has been very recently demonstrated th…
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In order to obtain modulated-martensite in our epitaxial Ni-Mn-Ga films, we have tuned the composition by using a co-sputtering process. Here we present how the composition affects the variant distribution of the 14-modulated martensite at room temperature. The nature of such modulated-martensites is still strongly debated for magnetic shape memory alloys. It has been very recently demonstrated that the modulated-martensites in Ni-Mn-Ga are adaptive phases. The results presented here corroborate this theory for the first time, for three different compositions. Moreover, we demonstrate with the help of the adaptive modulations theory that b-variants of the 14-modulated martensite form close to the free-surface of the film to release the stress induced by branching of macro-twinned domains during the martensitic transformation on a rigid substrate. At room temperature, the content of such b-variants is found to strongly decrease when the macro-twinned domain sizes increase.
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Submitted 10 November, 2010;
originally announced November 2010.
