Showing 1–2 of 2 results for author: Veksler, D

In-Line-Test of Variability and Bit-Error-Rate of HfOx-Based Resistive Memory

Authors: B. L. Ji, H. Li, Q. Ye, S. Gausepohl, S. Deora, D. Veksler, S. Vivekanand, H. Chong, H. Stamper, T. Burroughs, C. Johnson, M. Smalley, S. Bennett, V. Kaushik, J. Piccirillo, M. Rodgers, M. Passaro, M. Liehr

Abstract: Spatial and temporal variability of HfOx-based resistive random access memory (RRAM) are investigated for manufacturing and product designs. Manufacturing variability is characterized at different levels including lots, wafers, and chips. Bit-error-rate (BER) is proposed as a holistic parameter for the write cycle resistance statistics. Using the electrical in-line-test cycle data, a method is dev… ▽ More Spatial and temporal variability of HfOx-based resistive random access memory (RRAM) are investigated for manufacturing and product designs. Manufacturing variability is characterized at different levels including lots, wafers, and chips. Bit-error-rate (BER) is proposed as a holistic parameter for the write cycle resistance statistics. Using the electrical in-line-test cycle data, a method is developed to derive BERs as functions of the design margin, to provide guidance for technology evaluation and product design. The proposed BER calculation can also be used in the off-line bench test and build-in-self-test (BIST) for adaptive error correction and for the other types of random access memories. △ Less

Submitted 31 August, 2015; originally announced September 2015.

Comments: 4 pages. Memory Workshop (IMW), 2015 IEEE International

Journal ref: 2015 IEEE International Memory Workshop(IMW), 17-20 May 2015 URL: http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=7150290&isnumber=7150256

Measurement of the Optical Absorption Spectra of Epitaxial Graphene from Terahertz to Visible

Authors: Jahan M. Dawlaty, Shriram Shivaraman, Jared Strait, Paul George, Mvs Chandrashekhar, Farhan Rana, Michael G. Spencer, Dmitry Veksler, Yunqing Chen

Abstract: We present experimental results on the optical absorption spectra of epitaxial graphene from the visible to the terahertz (THz) frequency range. In the THz range, the absorption is dominated by intraband processes with a frequency dependence similar to the Drude model. In the near IR range, the absorption is due to interband processes and the measured optical conductivity is close to the theoret… ▽ More We present experimental results on the optical absorption spectra of epitaxial graphene from the visible to the terahertz (THz) frequency range. In the THz range, the absorption is dominated by intraband processes with a frequency dependence similar to the Drude model. In the near IR range, the absorption is due to interband processes and the measured optical conductivity is close to the theoretical value of $e^{2}/4\hbar$. We extract values for the carrier densities, the number of carbon atom layers, and the intraband scattering times from the measurements. △ Less

Submitted 16 August, 2008; v1 submitted 22 January, 2008; originally announced January 2008.