Showing 1–50 of 1,564 results for author: Wang, L

Inducing superconductivity in quantum anomalous Hall regime

Authors: Yu Huang, Yu Fu, Peng Zhang, Kang L. Wang, Qing Lin He

Abstract: Interfacing the quantum anomalous Hall insulator with a conventional superconductor is known to be a promising manner for realizing a topological superconductor, which has been continuously pursued for years. Such a proximity route depends to a great extent on the control of the delicate interfacial coupling of the two constituents. However, a recent experiment reported the failure to reproduce su… ▽ More Interfacing the quantum anomalous Hall insulator with a conventional superconductor is known to be a promising manner for realizing a topological superconductor, which has been continuously pursued for years. Such a proximity route depends to a great extent on the control of the delicate interfacial coupling of the two constituents. However, a recent experiment reported the failure to reproduce such a topological superconductor, which is ascribed to the negligence of the electrical short by the superconductor in the theoretical proposal. Here, we reproduce this topological superconductor with attention to the interface control. The resulted conductance matrix under a wide magnetic field range agrees with the fingerprint of this topological superconductor. This allows us to develop a phase diagram that unveils three regions parameterized by various coupling limits, which not only supports the feasibility to fabricate the topological superconductor by proximity but also fully explains the origin of the previous debate. The present work provides a comprehensible guide on fabricating the topological superconductor. △ Less

Submitted 2 July, 2024; originally announced July 2024.

Comments: 17 pages, 4 figures

Journal ref: 2024 J. Phys.: Condens. Matter 36 37LT01

Discovering one molecule out of a million: inverse design of molecular hole transporting semiconductors tailored for perovskite solar cells

Authors: Jianchang Wu, Luca Torresi, ManMan Hu, Patrick Reiser, Jiyun Zhang, Juan S. Rocha-Ortiz, Luyao Wang, Zhiqiang Xie, Kaicheng Zhang, Byung-wook Park, Anastasia Barabash, Yicheng Zhao, Junsheng Luo, Yunuo Wang, Larry Lüer, Lin-Long Deng, Jens A. Hauch, Sang Il Seok, Pascal Friederich, Christoph J. Brabec

Abstract: The inverse design of tailored organic molecules for specific optoelectronic devices of high complexity holds an enormous potential, but has not yet been realized1,2. The complexity and literally infinite diversity of conjugated molecular structures present both, an unprecedented opportunity for technological breakthroughs as well as an unseen optimization challenge. Current models rely on big dat… ▽ More The inverse design of tailored organic molecules for specific optoelectronic devices of high complexity holds an enormous potential, but has not yet been realized1,2. The complexity and literally infinite diversity of conjugated molecular structures present both, an unprecedented opportunity for technological breakthroughs as well as an unseen optimization challenge. Current models rely on big data which do not exist for specialized research films. However, a hybrid computational and high throughput experimental screening workflow allowed us to train predictive models with as little as 149 molecules. We demonstrate a unique closed-loop workflow combining high throughput synthesis and Bayesian optimization that discovers new hole transporting materials with tailored properties for solar cell applications. A series of high-performance molecules were identified from minimal suggestions, achieving up to 26.23% (certified 25.88%) power conversion efficiency in perovskite solar cells. Our work paves the way for rapid, informed discovery in vast molecular libraries, revolutionizing material selection for complex devices. We believe that our approach can be generalized to other emerging fields and indeed accelerate the development of optoelectronic semiconductor devices in general. △ Less

Submitted 30 June, 2024; originally announced July 2024.

Comments: 21 pages, 5 figures

Indications of superconductivities in blend of variant apatite and covellite

Authors: Hongyang Wang, Yijing Zhao, Hao Wu, Ling Wang, Zhixing Wu, Zhihui Geng, Jiewen Xiao, Weiwei Xue, Shufeng Ye, Ning Chen, Xianfeng Qiao, Yao Yao

Abstract: Through heavily doping sulfur into an apatite framework, we synthesize a new blend mainly comprising variant apatite and covellite (copper sulfide). Magnetic measurement exhibits that significant diamagnetism appears at around 260 K and drops dramatically below 30 K implying coexistence of two superconducting phases. The upper critical magnetic field is larger than 1000 Oe at 250 K. Electric measu… ▽ More Through heavily doping sulfur into an apatite framework, we synthesize a new blend mainly comprising variant apatite and covellite (copper sulfide). Magnetic measurement exhibits that significant diamagnetism appears at around 260 K and drops dramatically below 30 K implying coexistence of two superconducting phases. The upper critical magnetic field is larger than 1000 Oe at 250 K. Electric measurement manifests that the current-voltage curves deviate from the normal linear lineshape suggesting the presence of zero-resistance effect, and the critical current is around 50 $μ$A at 140 K. These exotic magnetic and electric features strongly indicate these two components, variant apatite and covellite, individually trigger two superconducting phases at near-room and low temperatures. △ Less

Submitted 25 June, 2024; originally announced June 2024.

Comments: 15 pages, 4 figures

Pressure-induced exciton formation and superconductivity in platinum-based mineral Sperrylite

Authors: Limin Wang, Rongwei Hu, Yash Anand, Shanta R. Saha, Jason R. Jeffries, Johnpierre Paglione

Abstract: We report a comprehensive study of Sperrylite (PtAs2), the main platinum source in natural minerals, as a function of applied pressures up to 150 GPa. While no structural phase transition was detected from pressure-dependent X-ray measurements, the unit cell volume shrinks monotonically with pressure following the third-order Birch-Murnaghan equation of state. The mildly semiconducting behavior fo… ▽ More We report a comprehensive study of Sperrylite (PtAs2), the main platinum source in natural minerals, as a function of applied pressures up to 150 GPa. While no structural phase transition was detected from pressure-dependent X-ray measurements, the unit cell volume shrinks monotonically with pressure following the third-order Birch-Murnaghan equation of state. The mildly semiconducting behavior found in pure synthesized crystals at ambient pressures becomes more insulating upon increasing applied pressure before metalizing at higher pressures, giving way to the appearance of an abrupt decrease in resistance near 3 K at pressures above 92 GPa consistent with the onset of a superconducing phase. The pressure evolution of the calculated electronic band structure reveals the same physical trend as our transport measurements, with a non-monotonic evolution explained by a hole band that is pushed below the Fermi energy and an electron band that approaches it as a function of pressure, both reaching a touching point suggestive of an excitonic state. A topological Lifshitz transition of the electronic structure and an increase in the density of states may naturally explain the onset of superconductivity in this material △ Less

Submitted 24 June, 2024; originally announced June 2024.

Comments: 7 pages, 7 figures

GeoMFormer: A General Architecture for Geometric Molecular Representation Learning

Authors: Tianlang Chen, Shengjie Luo, Di He, Shuxin Zheng, Tie-Yan Liu, Liwei Wang

Abstract: Molecular modeling, a central topic in quantum mechanics, aims to accurately calculate the properties and simulate the behaviors of molecular systems. The molecular model is governed by physical laws, which impose geometric constraints such as invariance and equivariance to coordinate rotation and translation. While numerous deep learning approaches have been developed to learn molecular represent… ▽ More Molecular modeling, a central topic in quantum mechanics, aims to accurately calculate the properties and simulate the behaviors of molecular systems. The molecular model is governed by physical laws, which impose geometric constraints such as invariance and equivariance to coordinate rotation and translation. While numerous deep learning approaches have been developed to learn molecular representations under these constraints, most of them are built upon heuristic and costly modules. We argue that there is a strong need for a general and flexible framework for learning both invariant and equivariant features. In this work, we introduce a novel Transformer-based molecular model called GeoMFormer to achieve this goal. Using the standard Transformer modules, two separate streams are developed to maintain and learn invariant and equivariant representations. Carefully designed cross-attention modules bridge the two streams, allowing information fusion and enhancing geometric modeling in each stream. As a general and flexible architecture, we show that many previous architectures can be viewed as special instantiations of GeoMFormer. Extensive experiments are conducted to demonstrate the power of GeoMFormer. All empirical results show that GeoMFormer achieves strong performance on both invariant and equivariant tasks of different types and scales. Code and models will be made publicly available at https://github.com/c-tl/GeoMFormer. △ Less

Submitted 24 June, 2024; originally announced June 2024.

Comments: 25 pages, 13 tables, l figure; ICML 2024 camera ready version

Sublattice Dichotomy in Monolayer FeSe Superconductor

Authors: Cui Ding, Zhipeng Xu, Xiaotong Jiao, Qiyin Hu, Wenxuan Zhao, Lexian Yang, Kun Jiang, Jin-Feng Jia, Lili Wang, Jiangping Hu, Qi-Kun Xue

Abstract: The pairing mechanism behind the monolayer FeSe is one essential question for iron-based superconductors. In this work, we show the sublattice degree of freedoms of monolayer FeSe plays a special role in its pairing properties, namely the sublattice dichotomy. The high-quality monolayer FeSe samples with atomic flat $1\times1$ topography on the SrTiO$_3$(001) substrates are grown by molecular beam… ▽ More The pairing mechanism behind the monolayer FeSe is one essential question for iron-based superconductors. In this work, we show the sublattice degree of freedoms of monolayer FeSe plays a special role in its pairing properties, namely the sublattice dichotomy. The high-quality monolayer FeSe samples with atomic flat $1\times1$ topography on the SrTiO$_3$(001) substrates are grown by molecular beam epitaxy. By comparing the tunneling spectra at $α$ and $β$ Fe sublattices, we find the coherence peak of $α$-Fe at the inner gap $+V_i$ is higher than $β$-Fe while the coherence peak of $β$-Fe at $-V_i$ is higher than $α$-Fe with a similar amount. We also observed a reversed effect at the outer gap $\pm V_o$. We propose the $η$-pairing mechanism between $k$ and $-k+Q$ is the key mechanism for this unconventional sublattice dichotomy effect. △ Less

Submitted 21 June, 2024; originally announced June 2024.

Comments: 6 pages, 4 figures

Structural and Electrical Properties of Grafted Si/GaAsSb Heterojunction

Authors: Haris Naeem Abbasi, Seunghyun Lee, Hyemin Jung, Nathan Gajowski, Yi Lu, Linus Wang, Donghyeok Kim, Jie Zhou, Jiarui Gong, Chris Chae, Jinwoo Hwang, Manisha Muduli, Subramanya Nookala, Zhenqiang Ma, Sanjay Krishna

Abstract: The short-wave infrared (SWIR) wavelength, especially 1.55 um, has attracted significant attention in various areas such as high-speed optical communication and LiDAR systems. Avalanche photodiodes (APDs) are a critical component as a receiver in these systems due to their internal gain which enhances the system performance. Silicon-based APDs are promising since they are CMOS compatible, but they… ▽ More The short-wave infrared (SWIR) wavelength, especially 1.55 um, has attracted significant attention in various areas such as high-speed optical communication and LiDAR systems. Avalanche photodiodes (APDs) are a critical component as a receiver in these systems due to their internal gain which enhances the system performance. Silicon-based APDs are promising since they are CMOS compatible, but they are limited in detecting 1.55 um light detection. This study proposes a p-type Si on n-type GaAs0.51Sb0.49 (GaAsSb) lattice matched to InP substrates heterojunction formed using a grafting technique for future GaAsSb/Si APD technology. A p+Si nanomembrane is transferred onto the GaAsSb/AlInAs/InP substrate, with an ultrathin ALD-Al2O3 oxide at the interface, which behaves as both double-side passivation and quantum tunneling layers. The devices exhibit excellent surface morphology and interface quality, confirmed by atomic force microscope (AFM) and transmission electron microscope (TEM). Also, the current-voltage (I-V) of the p+Si/n-GaAsSb heterojunction shows ideal rectifying characteristics with an ideality factor of 1.15. The I-V tests across multiple devices confirm high consistency and yield. Furthermore, the X-ray photoelectron spectroscopy (XPS) measurement reveals that GaAsSb and Si are found to have type-II band alignment with a conduction band offset of 50 meV which is favorable for the high-bandwidth APD application. The demonstration of the GaAsSb/Si heterojunction highlights the potential to advance current SWIR PD technologies. △ Less

Submitted 24 June, 2024; v1 submitted 20 June, 2024; originally announced June 2024.

Comments: 14 pages, 6 figures

Electrical switching of Ising-superconducting nonreciprocity for quantum neuronal transistor

Authors: Junlin Xiong, Jiao Xie, Bin Cheng, Yudi Dai, Xinyu Cui, Lizheng Wang, Zenglin Liu, Ji Zhou, Naizhou Wang, Xianghan Xu, Xianhui Chen, Sang-Wook Cheong, Shi-Jun Liang, Feng Miao

Abstract: Nonreciprocal quantum transport effect is mainly governed by the symmetry breaking of the material systems and is gaining extensive attention in condensed matter physics. Realizing electrical switching of the polarity of the nonreciprocal transport without external magnetic field is essential to the development of nonreciprocal quantum devices. However, electrical switching of superconducting nonr… ▽ More Nonreciprocal quantum transport effect is mainly governed by the symmetry breaking of the material systems and is gaining extensive attention in condensed matter physics. Realizing electrical switching of the polarity of the nonreciprocal transport without external magnetic field is essential to the development of nonreciprocal quantum devices. However, electrical switching of superconducting nonreciprocity remains yet to be achieved. Here, we report the observation of field-free electrical switching of nonreciprocal Ising superconductivity in Fe3GeTe2/NbSe2 van der Waals (vdW) heterostructure. By taking advantage of this electrically switchable superconducting nonreciprocity, we demonstrate a proof-of-concept nonreciprocal quantum neuronal transistor, which allows for implementing the XOR logic gate and faithfully emulating biological functionality of a cortical neuron in the brain. Our work provides a promising pathway to realize field-free and electrically switchable nonreciprocity of quantum transport and demonstrate its potential in exploring neuromorphic quantum devices with both functionality and performance beyond the traditional devices. △ Less

Submitted 20 June, 2024; originally announced June 2024.

Journal ref: Nature Communications 15, 4953 (2024)

Long-range magnetic order induced surface state in GdBi and DyBi

Authors: Yevhen Kushnirenko, Lin-Lin Wang, Zhuoqi Li, Brinda Kuthanazhi, Benjamin Schrunk, Evan O'Leary, Andrew Eaton, Paul. Canfield, Adam Kaminski

Abstract: The recent discovery of unconventional surface-state pairs, which give rise to Fermi arcs and spin textures, in antiferromagnetically ordered rare-earth monopnictides attracted the interest in these materials. We use angle-resolved photoemission spectroscopy (ARPES) measurements in conjunction with density functional theory (DFT) calculations to investigate the evolution of the electronic structur… ▽ More The recent discovery of unconventional surface-state pairs, which give rise to Fermi arcs and spin textures, in antiferromagnetically ordered rare-earth monopnictides attracted the interest in these materials. We use angle-resolved photoemission spectroscopy (ARPES) measurements in conjunction with density functional theory (DFT) calculations to investigate the evolution of the electronic structure of GdBi and DyBi. We find that new surface states, including a Dirac cone, emerge in the AFM state. However, they are located along a direction in momentum space that is different than what was found in NdSb, NdBi, and CeBi. The observed changes in the electronic structure are consistent with the presence of AFM-II-A type order. △ Less

Submitted 17 June, 2024; originally announced June 2024.

Exact complex mobility edges and flagellate spectra for non-Hermitian quasicrystals with exponential hoppings

Authors: Li Wang, Jiaqi Liu, Zhenbo Wang, Shu Chen

Abstract: We propose a class of general non-Hermitian quasiperiodic lattice models with exponential hoppings and analytically determine the genuine complex mobility edges by solving its dual counterpart exactly utilizing Avila's global theory. Our analytical formula unveils that the complex mobility edges usually form a loop structure in the complex energy plane. By shifting the eigenenergy a constant $t$,… ▽ More We propose a class of general non-Hermitian quasiperiodic lattice models with exponential hoppings and analytically determine the genuine complex mobility edges by solving its dual counterpart exactly utilizing Avila's global theory. Our analytical formula unveils that the complex mobility edges usually form a loop structure in the complex energy plane. By shifting the eigenenergy a constant $t$, the complex mobility edges of the family of models with different hopping parameter $t$ can be described by a unified formula, formally independent of $t$. By scanning the hopping parameter, we demonstrate the existence of a type of intriguing flagellate-like spectra in complex energy plane, in which the localized states and extended states are well separated by the complex mobility edges. Our result provides a firm ground for understanding the complex mobility edges in non-Hermitian quasiperiodic lattices. △ Less

Submitted 15 June, 2024; originally announced June 2024.

Comments: 8 pages, 2 figures

Massive Dirac Fermions and Strong Shubnikov-de Haas Oscillations in Topological Insulator Sm,Fe:Bi2Se3 Single Crystals

Authors: Weiyao Zhao, Chi Xuan Trang, Qile Li, Lei Chen, Zengji Yue, Abdulhakim Bake, Cheng Tan, Lan Wang, Mitchell Nancarrow, Mark Edmonds, David Cortie, Xiaolin Wang

Abstract: Topological insulators (TIs) are emergent materials with unique band structure, which allow the study of quantum effect in solids, as well as contribute to high performance quantum devices. To achieve the better performance of TI, here we present a co-doping strategy using synergistic rare-earth Sm and transition-metal Fe dopants in Bi2Se3 single crystals, which combine the advantages of both tran… ▽ More Topological insulators (TIs) are emergent materials with unique band structure, which allow the study of quantum effect in solids, as well as contribute to high performance quantum devices. To achieve the better performance of TI, here we present a co-doping strategy using synergistic rare-earth Sm and transition-metal Fe dopants in Bi2Se3 single crystals, which combine the advantages of both transition metal doped TI (high ferromagnetic ordering temperature and observed QAHE), and rare-earth doped TI (large magnetic moments and significant spin orbit coupling). In the as-grown single crystals, clear evidences of ferromagnetic ordering were observed. The angle resolve photoemission spectroscopy indicate the ferromagnetism opens a 44 meV band gap at surface Dirac point. Moreover, the carrier mobility at 3 K is ~ 7400 cm2/Vs, and we thus observed an ultra-strong Shubnikov-de Haas oscillation in the longitudinal resistivity, as well as the Hall steps in transverse resistivity below 14 T. Our transport and angular resolved photoemission spectroscopy results suggest that the rare-earth and transition metal co-doping in Bi2Se3 system is a promising avenue implement the quantum anomalous Hall effect, as well as harnessing the massive Dirac fermion in electrical devices. △ Less

Submitted 13 June, 2024; originally announced June 2024.

Comments: 5 figures

Journal ref: Physical Review B 104, 085153 (2021)

The first-order structural phase transition at low-temperature in GaPt$_{5}$P and its rapid enhancement with pressure

Authors: A. Sapkota, T. J. Slade, S. Huyan, N. K. Nepal, J. M. Wilde, N. Furukawa, S. H. Laupidus, L. -L. Wang, S. L. Bud'ko, P. C. Canfield

Abstract: Single crystals of XPt$_{5}$P (X = Al, Ga, and In) were grown from a Pt-P solution at high temperatures, and ambient-pressure measurements of temperature-dependent magnetization, resistivity, and X-ray diffraction were made. Also, the ambient-pressure Hall resistivity and temperature-dependent resistance under pressure were measured on GaPt$_{5}$P. All three compounds have tetragonal $P4/mmm$ crys… ▽ More Single crystals of XPt$_{5}$P (X = Al, Ga, and In) were grown from a Pt-P solution at high temperatures, and ambient-pressure measurements of temperature-dependent magnetization, resistivity, and X-ray diffraction were made. Also, the ambient-pressure Hall resistivity and temperature-dependent resistance under pressure were measured on GaPt$_{5}$P. All three compounds have tetragonal $P4/mmm$ crystal structure at room-temperature with metallic transport and weak diamagnetism over the $2-300$~K temperature range. Surprisingly, at ambient pressure, both the transport and magnetization measurements on GaPt$_{5}$P show a step-like feature in $70-90$~K region suggesting a possible structural phase transition, and no such features were observed in (Al/In)Pt$_{5}$P. Both the hysteretic nature and sharpness of the feature suggest the first-order transition, and single-crystal X-ray diffraction measurements provided further details of the structural transition with a crystal symmetry likely different than $P4/mmm$ below transition. The transition is characterized by anisotropic changes in the lattice parameters, a volume collapse, and satellite peaks at two distinct wave-vectors. Density functional theory calculations present phonon softening as a possible driving mechanism. Additionally, the structural transition temperature increases rapidly with increasing pressure, reaching room temperature by $\sim 2.2$~GPa, highlighting the high degree of pressure sensitivity and fragile nature of GaPt$_{5}$P room-temperature structure. Although the volume collapse and extreme pressure sensitivity suggest chemical pressure should drive a similar structural change in AlPt$_{5}$P, with smaller unit cell dimensions and volume, its structure is found to be $P4/mmm$ as well. Overall, GaPt$_{5}$P stands out as a sole member of the 1-5-1 family of compounds with a temperature-driven structural change. △ Less

Submitted 10 June, 2024; originally announced June 2024.

Comments: 18 pages, 19 figures

Realtime observation of a tungsten-promoted size regulation mechanism in a rhodium catalyst at atomic resolution

Authors: Petra Specht, Joo H. Kang, Kartick Tarafder, Robert Cieslinski, David Barton, Bastian Barton, Anna Carlsson, Lin-Wang Wang, Christian Kisielowski

Abstract: The static and genuine structure of small rhodium and rhodium/tungsten nanoparticles on an alumina support can be imaged with atomic resolution even if single digit atom clusters are investigated. Low dose rate electron microscopy is key to the achievement and can generally be applied to investigate any similar material. In such conditions it becomes feasible to identify the chemical composition o… ▽ More The static and genuine structure of small rhodium and rhodium/tungsten nanoparticles on an alumina support can be imaged with atomic resolution even if single digit atom clusters are investigated. Low dose rate electron microscopy is key to the achievement and can generally be applied to investigate any similar material. In such conditions it becomes feasible to identify the chemical composition of nanocrystals from quantitative contrast analyses alone by counting atoms. The ability to fully characterize an unaltered, initial state of the objects allows targeting structural excitations or conformational changes induced by the electron beam itself. For the specific case of catalytic Rh:W particles we stimulate a tungsten-promoted size regulation mechanism in real time that is driven by Oswald ripening and can be understood by a strong binding of tungsten atoms to the oxygen atoms of the support, which builds up strain as the cluster sizes increase. △ Less

Submitted 9 June, 2024; originally announced June 2024.

Comments: 30 pages, 9 figures, 1 table

Chern insulator phase realized in dual-gate-tuned MnBi2Te4 thin films grown by molecular beam epitaxy

Authors: Yunhe Bai, Yuanzhao Li, Ruixuan Liu, Jianli Luan, Yang Chen, Wenyu Song, Peng-Fei Ji, Cui Ding, Zongwei Gao, Qinghua Zhang, Fanqi Meng, Bingbing Tong, Lin Li, Tianchen Zhu, Lin Gu, Lili Wang, Jinsong Zhang, Yayu Wang, Qi-Kun Xue, Ke He, Yang Feng, Xiao Feng

Abstract: The intrinsic magnetic order, large topological-magnetic gap and rich topological phases make MnBi2Te4 a wonderful platform to study exotic topological quantum states such as axion insulator and Chern insulator. To realize and manipulate these topological phases in a MnBi2Te4 thin film, precise manipulation of the electric field across the film is essential, which requires a dual-gate structure. I… ▽ More The intrinsic magnetic order, large topological-magnetic gap and rich topological phases make MnBi2Te4 a wonderful platform to study exotic topological quantum states such as axion insulator and Chern insulator. To realize and manipulate these topological phases in a MnBi2Te4 thin film, precise manipulation of the electric field across the film is essential, which requires a dual-gate structure. In this work, we achieve dual-gate tuning of MnBi2Te4 thin films grown with molecular beam epitaxy on SrTiO3(111) substrates by applying the substrate and an AlOx layer as the gate dielectrics of bottom and top gates, respectively. Under magnetic field of 9T and temperature of 20 mK, the Hall and longitudinal resistivities of the films show inversed gate-voltage dependence, for both top- and bottom-gates, signifying the existence of the dissipationless edge state contributed by Chern insulator phase in the ferromagnetic configuration. The maximum of the Hall resistivity only reaches 0.8 h/e2, even with dual-gate tuning, probably due to the high density of bulk carriers introduced by secondary phases. In the antiferromagnetic state under zero magnetic field, the films show normal insulator behavior. The dual-gated MnBi2Te4 thin films lay the foundation for developing devices based on electrically tunable topological quantum states. △ Less

Submitted 9 June, 2024; originally announced June 2024.

Comments: 24 pages, 4 figures

Near-Room-Temperature Field-Controllable Exchange Bias in 2D van der Waals Ferromagnet Fe3GaTe2

Authors: Jifeng Shao, Xiaolong Yin, Chunhao Bao, Sirong Lu, Xiaoming Ma, Shu Guo, Le Wang, Xi Zhang, Zhiyue Li, Longxiang Li, Yue Zhao, Tingyong Chen

Abstract: Exchange bias (EB) is a cornerstone of modern magnetic memory and sensing technologies. Its extension to the realm of two-dimensional (2D) van der Waals (vdW) magnets holds promise for revolutionary advancements in miniaturized and efficient atomic spintronic devices. However, the blocking temperature of EB in 2D vdW magnets is currently well below room temperature ~130 K. This study reports a rob… ▽ More Exchange bias (EB) is a cornerstone of modern magnetic memory and sensing technologies. Its extension to the realm of two-dimensional (2D) van der Waals (vdW) magnets holds promise for revolutionary advancements in miniaturized and efficient atomic spintronic devices. However, the blocking temperature of EB in 2D vdW magnets is currently well below room temperature ~130 K. This study reports a robust EB phenomenon in Fe3GaTe2 thin-layer devices, which significantly increases the blocking temperature to a near-room-temperature record of 280 K. Both the bias direction and magnitude can be isothermally tuned by adjusting the field sweep range, in striking contrast to the conventional EB in ferromagnetic/antiferromagnetic (FM/AFM) bilayers. We propose an exchange spring model in which crystal defects with higher coercivity act as the pivotal pinning source for the observed EB phenomenon, deviating from the conventional FM/AFM interface mechanism. Cumulative growth of minor loops and multiple magnetization reversal paths are observed in field cycles below the saturation field, consistent with the hard FM defects behavior of our exchange spring model. These findings provide insights into the complex magnetic order in 2D ferromagnets and open new avenues for developing practical ultrathin vdW spintronic devices with EB-like properties at room temperature. △ Less

Submitted 4 June, 2024; originally announced June 2024.

Comments: 14 pages, 5 figures

Anisotropic Paramagnetic Peak Effect in Reversible Magnetization of Crystalline Miassite Superconductor $\text{Rh}_{17}\text{S}_{15}$

Authors: Ruslan Prozorov, Makariy A. Tanatar, Marcin Kończykowski, Romain Grasset, Alexei E. Koshelev, Linlin Wang, Sergey L. Bud'ko, Paul C. Canfield

Abstract: We report an unusual anisotropic paramagnetic peak effect observed in reversible magnetization of a single crystalline nodal superconductor $\text{Rh}_{17}\text{S}_{15}$. Both temperature- and field-dependent magnetization measurements reveal a distinct novel vortex state above approximately 1 T. This peak effect is most pronounced when the magnetic field, $H$, is applied parallel to the… ▽ More We report an unusual anisotropic paramagnetic peak effect observed in reversible magnetization of a single crystalline nodal superconductor $\text{Rh}_{17}\text{S}_{15}$. Both temperature- and field-dependent magnetization measurements reveal a distinct novel vortex state above approximately 1 T. This peak effect is most pronounced when the magnetic field, $H$, is applied parallel to the $\left[111\right]$ direction, whereas it diminishes for $H\parallel\left[110\right]$. Intriguingly, for $H\parallel\left[100\right]$, instead of a peak, we observe a step-like decrease in $M(T)$, with the step amplitude increasing in larger applied magnetic fields. This behavior is opposite to the expectations of conventional Meissner expulsion. The magnitude of the peak effect, expressed in terms of dimensionless volume susceptibility, is on the order of $Δχ=10^{-5}$ (with full diamagnetic screening corresponding to $χ=-1$). The observed anisotropic paramagnetic vortex response is unusual considering the cubic symmetry of $\text{Rh}_{17}\text{S}_{15}$. We propose that in this distinct vortex phase, a small but finite attractive interaction between vortices below $H_{c2}$ may be responsible for this unusual phenomenon. Furthermore, the vortices seem to prefer aligning along the $\left[111\right]$ direction, rotating toward it when the magnetic field is applied in other directions. Our findings add another item to the list of unusual properties of $\text{Rh}_{17}\text{S}_{15}$ that attracted recent attention as the first unconventional superconductor that has a mineral analog, miassite, found in nature. △ Less

Submitted 1 June, 2024; originally announced June 2024.

Unidirectional charge orders induced by oxygen vacancies on SrTiO$_3$(001)

Authors: Cui Ding, Wenfeng Dong, Xiaotong Jiao, Zhiyu Zhang, Guanming Gong, Zhongxu Wei, Lili Wang, Jin-Feng Jia, Qi-Kun Xue

Abstract: The discovery of high-mobility two-dimensional electron gas and low carrier density superconductivity in multiple SrTiO$_3$-based heterostructures has stimulated intense interest in the surface properties of SrTiO$_3$. The recent discovery of high-T$_c$ superconductivity in the monolayer FeSe/SrTiO$_3$ aroused the upsurge and underscored the atomic precision probe of the surface structure. By perf… ▽ More The discovery of high-mobility two-dimensional electron gas and low carrier density superconductivity in multiple SrTiO$_3$-based heterostructures has stimulated intense interest in the surface properties of SrTiO$_3$. The recent discovery of high-T$_c$ superconductivity in the monolayer FeSe/SrTiO$_3$ aroused the upsurge and underscored the atomic precision probe of the surface structure. By performing atomically resolved cryogenic scanning tunneling microscopy/spectroscopy characterization on dual-TiO$_{2}$-$δ$-terminated SrTiO$_3$(001) surfaces with ($\sqrt{13}$ $\times$ $\sqrt{13}$), c(4 $\times$ 2), mixed (2 $\times$ 1), and (2 $\times$ 2) reconstructions, we disclosed universally broken rotational symmetry and contrasting bias- and temperature-dependent electronic states for apical and equatorial oxygen sites. With the sequentially evolved surface reconstructions and simultaneously increasing equatorial oxygen vacancies, the surface anisotropy reduces, and the work function lowers. Intriguingly, unidirectional stripe orders appear on the c(4 $\times$ 2) surface, whereas local (4 $\times$ 4) order emerges and eventually forms long-range unidirectional c(4 $\times$ 4) charge order on the (2 $\times$ 2) surface. This work reveals robust unidirectional charge orders induced by oxygen vacancies due to strong and delicate electronic-lattice interaction under broken rotational symmetry, providing insights into understanding the complex behaviors in perovskite oxide-based heterostructures. △ Less

Submitted 30 May, 2024; originally announced May 2024.

Stoner instabilities and Ising excitonic states in twisted transition metal dichalcogenides

Authors: Augusto Ghiotto, LingNan Wei, Larry Song, Jiawei Zang, Aya Batoul Tazi, Daniel Ostrom, Kenji Watanabe, Takashi Taniguchi, James C. Hone, Daniel A. Rhodes, Andrew J. Millis, Cory R. Dean, Lei Wang, Abhay N. Pasupathy

Abstract: Moiré transition metal dichalcogenide (TMD) systems provide a tunable platform for studying electron-correlation driven quantum phases. Such phases have so far been found at rational fillings of the moiré superlattice, and it is believed that lattice commensurability plays a key role in their stability. In this work, we show via magnetotransport measurements on twisted WSe2 that new correlated ele… ▽ More Moiré transition metal dichalcogenide (TMD) systems provide a tunable platform for studying electron-correlation driven quantum phases. Such phases have so far been found at rational fillings of the moiré superlattice, and it is believed that lattice commensurability plays a key role in their stability. In this work, we show via magnetotransport measurements on twisted WSe2 that new correlated electronic phases can exist away from commensurability. The first phase is an antiferromagnetic metal that is driven by proximity to the van Hove singularity. The second is a re-entrant magnetic field-driven insulator. This insulator is formed from a small and equal density of electrons and holes with opposite spin projections - an Ising excitonic insulator. △ Less

Submitted 27 May, 2024; originally announced May 2024.

Impurity-level induced broadband photoelectric response in wide-band semiconductor SrSnO3

Authors: Yuyang Zhang, Lisheng Wang, Weijie Wu, Zhaoyang Wang, Fei Sun, He Jiang, Bangmin Zhang, Yue Zheng

Abstract: Broadband spectrum detectors exhibit great promise in fields such as multispectral imaging and optical communications. Despite significant progress, challenges like materials instability, complex manufacturing process and high costs still hinder further application. Here we present a method that achieves broadband spectral detect by impurity-level in SrSnO3. We report over 200 mA/W photo-responsiv… ▽ More Broadband spectrum detectors exhibit great promise in fields such as multispectral imaging and optical communications. Despite significant progress, challenges like materials instability, complex manufacturing process and high costs still hinder further application. Here we present a method that achieves broadband spectral detect by impurity-level in SrSnO3. We report over 200 mA/W photo-responsivity at 275 nm (ultraviolet C solar-bind) and 367 nm (ultraviolet A) and ~ 1 mA/W photo-responsivity at 532 nm and 700 nm (visible) with a voltage bias of 5V. Further transport and photoluminescence results indicate that the broadband response comes from the impurity levels and mutual interactions. Additionally, the photodetector demonstrates excellent robustness and stability under repeated tests and prolonged exposure in air. These findings show the potential of SSO photodetectors and propose a method to achieve broadband spectrum detection, creating new possibility for the development of single-phase, low-cost, simple structure and high-efficiency photodetectors. △ Less

Submitted 22 May, 2024; originally announced May 2024.

Comments: 5 Figures

Strongly coupled magneto-exciton condensates in large-angle twisted double bilayer graphene

Authors: Qingxin Li, Yiwei Chen, LingNan Wei, Hong Chen, Yan Huang, Yujian Zhu, Wang Zhu, Dongdong An, Junwei Song, Qikang Gan, Qi Zhang, Kenji Watanabe, Takashi Taniguchi, Xiaoyang Shi, Kostya S. Novoselov, Rui Wang, Geliang Yu, Lei Wang

Abstract: Excitons, the bosonic quasiparticle emerging from Coulomb interaction between electrons and holes, will undergo a Bose-Einstein condensation(BEC) and transition into a superfluid state with global phase coherence at low temperatures. An important platform to study such excitonic physics is built on double-layer quantum wells or recent two-dimensional material heterostructures, where two parallel p… ▽ More Excitons, the bosonic quasiparticle emerging from Coulomb interaction between electrons and holes, will undergo a Bose-Einstein condensation(BEC) and transition into a superfluid state with global phase coherence at low temperatures. An important platform to study such excitonic physics is built on double-layer quantum wells or recent two-dimensional material heterostructures, where two parallel planes of electrons and holes are separated by a thin insulating layer. Lowering this separation distance ($d$) enhances the interlayer Coulomb interaction thereby strengthens the exciton binding energy. However, an exceedingly small $d$ will lead to the undesired interlayer tunneling, which results the annihilation of excitons. Here, we report the observation of a sequences of robust exciton condensates(ECs) in double bilayer graphenes twisted to $\sim 10^\circ$ with no insulating mid-layer. The large momentum mismatch between the two graphene layers well suppress the interlayer tunneling, allowing us to reach the separation lower limit $\sim$ 0.334 nm and investigate ECs in the extreme coupling regime. Carrying out transport measurements on the bulk and edge of the devices, we find incompressible states corresponding to ECs when both layers are half-filled in the $N=0$ and $N=1$ Landau levels (LLs). The comparison between these ECs and theoretical calculations suggest that the low-energy charged excitation of ECs can be meron-antimeron or particle-hole pair, which relies on both LL index and carrier type. Our results establish large-angle twisted bilayers as an experimental platform with extreme coupling strength for studying quantum bosonic phase and its low-energy excitations. △ Less

Submitted 19 May, 2024; originally announced May 2024.

A thermodynamic and analytical description on the quantitative phase-field model with enhanced interface diffusivity

Authors: Yue Li, Lei Wang, Junjie Li, Jincheng Wang, Zhijun Wang

Abstract: Based on the idea of maintaining physical diffuse interface kinetics, enhancing interfacial diffusivity has recently provided a new direction for quantitative phase-field simulation at microstructural length and time scale. Establishing a general relationship between interface diffusivity and width is vital to facilitate the practical application. However, it is still limited by time-consuming num… ▽ More Based on the idea of maintaining physical diffuse interface kinetics, enhancing interfacial diffusivity has recently provided a new direction for quantitative phase-field simulation at microstructural length and time scale. Establishing a general relationship between interface diffusivity and width is vital to facilitate the practical application. However, it is still limited by time-consuming numerical corrections, and its relationship with non-dilute thermodynamic properties still needs to be revealed. In this study, we present a new thermodynamic and analytical method for determining interfacial diffusivity enhancement. Unlike previous numerical corrections of partition coefficients and interface temperature, this new method aims to keep several thermodynamic quantities unchanged after enlarging the interface width. These essential quantities are theoretically proven to be diffusion potential jump across the diffuse interface and free energy dissipation by trans-interface diffusion. Since no dilute approximation has been employed in model derivation, the present method is available for binary alloys with arbitrary thermodynamic properties and can be easily extended to describe multicomponent systems. Therefore, the present method is expected to advance the recent quantitative phase-field framework and facilitate its practical applications. △ Less

Submitted 19 May, 2024; originally announced May 2024.

Comments: 22 pages 10+1figures

Observation of a $p$-orbital higher-order topological insulator phase in puckered lattice acoustic metamaterials

Authors: Bing-Quan Wu, Zhi-Kang Lin, Li-Wei Wang, Jian-Hua Jiang

Abstract: The puckered lattice geometry, along with $p$-orbitals is often overlooked in the study of topological physics. Here, we investigate the higher-order topology of the $p_{x,y}$-orbital bands in acoustic metamaterials using a simplified two-dimensional phosphorene lattice which possesses a puckered structure. Notably, unlike the $s$-orbital bands in planar lattices, the unique higher-order topology… ▽ More The puckered lattice geometry, along with $p$-orbitals is often overlooked in the study of topological physics. Here, we investigate the higher-order topology of the $p_{x,y}$-orbital bands in acoustic metamaterials using a simplified two-dimensional phosphorene lattice which possesses a puckered structure. Notably, unlike the $s$-orbital bands in planar lattices, the unique higher-order topology observed here is specific to $p$-orbitals and the puckered geometry due to the unusual hopping patterns induced by them. {Using acoustic pump-probe measurements in metamaterials}, we confirm the emergence of the edge and corner states arising due to the unconventional higher-order topology. We reveal the uniqueness of the higher-order topological physics here via complimentary tight-binding calculations, finite-element simulations, and acoustic experiments. We analyze the underlying physics of the special properties of the edge and corner states in the puckered lattice acoustic metamaterials from the picture of Wannier orbitals. Our work sheds light on the intriguing physics of $p$-orbital topological physics in puckered lattices and acoustic metamaterials which lead to unconventional topological boundary states. \end{abstract} △ Less

Submitted 9 May, 2024; originally announced May 2024.

Comments: Accepted by Phys. Rev. B

Non-Hermitian topological phases and skin effects in kagome lattices

Authors: Li-Wei Wang, Zhi-Kang Lin, Jian-Hua Jiang

Abstract: Non-Hermitian physics has added new ingredients to topological physics, leading to the rising frontier of non-Hermitian topological phases. In this study, we investigate Chern insulator phases emerging from non-Hermitian kagome models with non-reciprocal and pure imaginary next-nearest neighbor hoppings. In the presence or absence of $C_3$ rotation symmetry, hybrid topological-skin effects are exp… ▽ More Non-Hermitian physics has added new ingredients to topological physics, leading to the rising frontier of non-Hermitian topological phases. In this study, we investigate Chern insulator phases emerging from non-Hermitian kagome models with non-reciprocal and pure imaginary next-nearest neighbor hoppings. In the presence or absence of $C_3$ rotation symmetry, hybrid topological-skin effects are explored through the identification of distinct corner skin modes in different energy regions within two band gaps. By employing the dynamical analysis, the underlying physics is revealed from the non-Hermitian skin effects associated with the chiral edge states, leading to diverse non-Hermitian bulk-boundary responses. The simplicity of these kagome models and their rich emergent topological phenomena suggest that they are appealing candidates for studying non-Hermitian topological phases. We further discuss the possible realizations of these models in non-Hermitian metamaterials. △ Less

Submitted 9 May, 2024; originally announced May 2024.

Journal ref: Phys. Rev. B 108, 195126 (2023)

Enhancement of the Curie temperature in single crystalline ferromagnetic LaCrGe$_3$ by electron irradiation-induced disorder

Authors: E. H. Krenkel, M. A. Tanatar, M. Konczykowski, R. Grasset, Lin-Lin Wang, S. L. Bud'ko, P. C. Canfield, R. Prozorov

Abstract: LaCrGe$_3$ has attracted attention as a potential candidate for studies of quantum phase transitions in a ferromagnetic material. The application of pressure avoids a quantum critical point by developing a new magnetic phase. It was suggested that the disorder may provide an alternative route to a quantum critical point. We used low-temperature 2.5 MeV electron irradiation to induce relatively sma… ▽ More LaCrGe$_3$ has attracted attention as a potential candidate for studies of quantum phase transitions in a ferromagnetic material. The application of pressure avoids a quantum critical point by developing a new magnetic phase. It was suggested that the disorder may provide an alternative route to a quantum critical point. We used low-temperature 2.5 MeV electron irradiation to induce relatively small amounts of point-like disorder in single crystals of LaCrGe$_3$. Irradiation leads to an increase of the resistivity at all temperatures with some deviation from the Matthiessen rule. Hall effect measurements show that electron irradiation does not cause any detectable change in the carrier density. Unexpectedly, the Curie temperature, $T_{\text{FM}}$, \emph{increases} with the increase of disorder from approximately 90 K in pristine samples up to nearly 100 K in the heavily irradiated sample, with a tendency towards saturation at higher doses. Although the mechanism of this effect is not entirely clear, we conclude that it cannot be caused by effective ``doping" or ``pressure" due to electron irradiation. We suggest that disorder-induced broadening of a sharp peak in the density of states, $D(E)$, situated at $E_p=E_F-0.25$ eV below the Fermi energy, $E_F$, causes an increase in $D(E_F)$, leading to an enhancement of $T_\text{FM}$ in this itinerant ferromagnet. △ Less

Submitted 7 May, 2024; originally announced May 2024.

A family of air-stable chalcogenide solid electrolytes in Li$_2$BMQ$_4$ (B = Ca, Sr and Ba; M = Si, Ge and Sn; Q = O, S and Se) systems

Authors: Huican Mao, Xiang Zhu, Guangmao Li, Jie Pang, Junfeng Hao, Liqi Wang, Hailong Yu, Youguo Shi, Fan Wu, Shilie Pan, Ruijuan Xiao, Hong Li, Liquan Chen

Abstract: Combining high-throughput first-principles calculations and experimental measurements, we have identified a novel family of fast lithium-ion chalcogenide conductors in Li$_2$BMQ$_4$ (2114, B = Ca, Sr and Ba; M = Si, Ge and Sn; Q = O, S and Se) systems. Our calculations demonstrate that most of the thermodynamically and kinetically stable sulfides and selenides in this new system exhibit ultralow L… ▽ More Combining high-throughput first-principles calculations and experimental measurements, we have identified a novel family of fast lithium-ion chalcogenide conductors in Li$_2$BMQ$_4$ (2114, B = Ca, Sr and Ba; M = Si, Ge and Sn; Q = O, S and Se) systems. Our calculations demonstrate that most of the thermodynamically and kinetically stable sulfides and selenides in this new system exhibit ultralow Li$^+$ ion migration activation energy (0.16 eV ~ 0.56 eV) and considerable bandgaps varying between ~ 2 eV and 3.5 eV. We have successfully synthesized Li$_2$BaSnS$_4$ and Li$_2$SrSiS$_4$, and they exhibit excellent moisture stability through H$_2$S gas measurements. Electrochemical impedance measurements indicate 2114 systems show the typical features of solid ionic conductors, with a room-temperature Li$^+$ conductivity close to 5$\times$10$^{-4}$ mS/cm aligning with our molecular dynamics simulations. Furthermore, we have theoretically investigated the substitution of Cl$^-$ at S$^{2-}$ site. The doped compounds display significantly higher conductivity, with an increase of about three orders of magnitude (up to a maximum of 0.72 mS/cm) compared to the undoped compounds. These findings offer valuable insights for the further exploration of potential chalcogenide solid electrolyte materials with robust air stability and enhanced ionic conductivity for practical applications in lithium-ion batteries. △ Less

Submitted 6 May, 2024; originally announced May 2024.

Vacancies making jerky flow in complex alloys

Authors: Zhida Liang, Fengxian Liu, Li Wang, Zihan You, Fanqi Zhong, Alan Cocks, Florian Pyczak

Abstract: Longevity of materials, especially alloys, is crucial for enhancing the sustainability and efficiency of various applications, including gas turbines. Jerky flow, also known as dynamic strain aging effect, can indeed have a significant impact on the fatigue life of high-temperature components in gas turbines. In general, three jerky flow types, i.e., A, B and C, existed in superalloys. Type A and… ▽ More Longevity of materials, especially alloys, is crucial for enhancing the sustainability and efficiency of various applications, including gas turbines. Jerky flow, also known as dynamic strain aging effect, can indeed have a significant impact on the fatigue life of high-temperature components in gas turbines. In general, three jerky flow types, i.e., A, B and C, existed in superalloys. Type A and B, occurring at low temperature, were proved to be caused by interstitial elements, such as carbon. However, Type C serration at high temperature has not been verified directly and remains unresolved, which was unanimously agreed it is caused by the interaction between solute elements and dislocations. In this study, our new discovery challenged this mainstream axiom. We proposed that vacancies play a dominant role in inducing jerky flow instead of solute atoms. By transmission electron microscopy, we observed directly that dislocations are pinned by vacancy-type dislocation loops (PDLs) or dipoles. Our findings suggest that vacancies located at dislocation jogs are primarily responsible for pinning and unpinning of superlattice dislocations. As dislocations move and interact with vacancies, PDLs or dipoles are left behind in their path. This pinning and unpinning process is repeated as successive dislocations encounter the newly formed PDLs or dipoles, leading to the recurring fluctuations in the stress, i.e., serrated flow. Additionally, antisite defects created by Co, Cr and Ti sitting on Ni positions is postulated to facilitate vacancy formation and migration towards dislocations via nearest neighbor jumps. This study provides a new avenue to show how future alloy design can improve the fatigue life of superalloys in extreme environments. △ Less

Submitted 5 May, 2024; originally announced May 2024.

Tunable Collective Excitations in Epitaxial Perovskite Nickelates

Authors: Mengxia Sun, Xu He, Mingyao Chen, Chi Sin Tang, Xiongfang Liu, Liang Dai, Jishan Liu, Zhigang Zeng, Shuo Sun, Mark B. H. Breese, Chuanbing Cai, Yingge Du, Le Wang, Andrew T. S. Wee, Xinmao Yin

Abstract: The formation of plasmons through the collective excitation of charge density has generated intense discussions, offering insights to fundamental sciences and potential applications. While the underlying physical principles have been well-established, the effects of many-body interactions and orbital hybridization on plasmonic dynamics remain understudied. In this work, we present the observation… ▽ More The formation of plasmons through the collective excitation of charge density has generated intense discussions, offering insights to fundamental sciences and potential applications. While the underlying physical principles have been well-established, the effects of many-body interactions and orbital hybridization on plasmonic dynamics remain understudied. In this work, we present the observation of conventional metallic and correlated plasmons in epitaxial La1-xSrxNiO3 (LSNO) films with varying Sr doping concentrations (x = 0, 0.125, 0.25), unveiling their intriguing evolution. Unlike samples at other doping concentrations, the x = 0.125 intermediate doping sample does not exhibit the correlated plasmons despite showing high optical conductivity. Through a comprehensive experimental investigation using spectroscopic ellipsometry and X-ray absorption spectroscopy, the O2p-Ni3d orbital hybridization for LSNO with a doping concentration of x = 0.125 is found to be significantly enhanced, alongside a considerable weakening of its effective correlation U*. These factors account for the absence of correlated plasmons and the high optical conductivity observed in LSNO (0.125). Our results underscore the profound impact of orbital hybridization on the electronic structure and the formation of plasmon in strongly-correlated systems. This in turn suggest that LSNO could serve as a promising alternative material in optoelectronic devices. △ Less

Submitted 1 June, 2024; v1 submitted 29 April, 2024; originally announced April 2024.

Uncovering an Interfacial Band Resulting from Orbital Hybridization in Nickelate Heterostructures

Authors: Mingyao Chen, Huimin Liu, Xu He, Minjuan Li, Chi Sin Tang, Mengxia Sun, Krishna Prasad Koirala, Mark E. Bowden, Yangyang Li, Xiongfang Liu, Difan Zhou, Shuo Sun, Mark B. H. Breese, Chuanbing Cai, Yingge Du, Andrew T. S. Wee, Le Wang, Xinmao Yin

Abstract: The interaction of atomic orbitals at the interface of perovskite oxide heterostructures has been investigated for its profound impact on the band structures and electronic properties, giving rise to unique electronic states and a variety of tunable functionalities. In this study, we conducted an extensive investigation of the optical and electronic properties of epitaxial NdNiO3 thin films grown… ▽ More The interaction of atomic orbitals at the interface of perovskite oxide heterostructures has been investigated for its profound impact on the band structures and electronic properties, giving rise to unique electronic states and a variety of tunable functionalities. In this study, we conducted an extensive investigation of the optical and electronic properties of epitaxial NdNiO3 thin films grown on a series of single crystal substrates. Unlike films synthesized on other substrates, NdNiO3 on SrTiO3 (NNO/STO) gives rise to a unique band structure which features an additional unoccupied band situated above the Fermi level. Our comprehensive investigation, which incorporated a wide array of experimental techniques and density functional theory calculations, revealed that the emergence of the interfacial band structure is primarily driven by the orbital hybridization between Ti 3d orbitals of the STO substrate and O 2p orbitals of the NNO thin film. Furthermore, exciton peaks have been detected in the optical spectra of the NNO/STO film, attributable to the pronounced electron-electron (e-e) and electron-hole (e-h) interactions propagating from the STO substrate into the NNO film. These findings underscore the substantial influence of interfacial orbital hybridization on the electronic structure of oxide thin-films, thereby offering key insights into tuning their interfacial properties. △ Less

Submitted 29 April, 2024; originally announced April 2024.

Comments: 26 pages,4 figures

Tailoring coercive fields and the Curie temperature via proximity coupling in WSe$_2$/Fe$_3$GeTe$_2$ van der Waals heterostructures

Authors: Guodong Ma, Renjun Du, Fuzhuo Lian, Song Bao, Zijing Guo, Xiaofan Cai, Jingkuan Xiao, Yaqing Han, Di Zhang, Siqi Jiang, Jiabei Huang, Xinglong Wu, Alexander S. Mayorov, Jinsheng Wen, Lei Wang, Geliang Yu

Abstract: Hybrid structures consisting of two-dimensional (2D) magnets and semiconductors have exhibited extensive functionalities in spintronics and opto-spintronics. In this work, we have fabricated WSe$_2$/Fe$_3$GeTe$_2$ van der Waals (vdW) heterostructures and investigated the proximity effects on 2D magnetism. Through reflective magnetic circular dichroism (RMCD), we have observed a temperature-depende… ▽ More Hybrid structures consisting of two-dimensional (2D) magnets and semiconductors have exhibited extensive functionalities in spintronics and opto-spintronics. In this work, we have fabricated WSe$_2$/Fe$_3$GeTe$_2$ van der Waals (vdW) heterostructures and investigated the proximity effects on 2D magnetism. Through reflective magnetic circular dichroism (RMCD), we have observed a temperature-dependent modulation of magnetic order in the heterostructure. For temperatures above $40$ K, WSe$_2$-covered Fe$_3$GeTe$_2$ exhibits a larger coercive field than that observed in bare Fe$_3$GeTe$_2$, accompanied by a noticeable enhancement of the Curie temperature by $21$ K. This strengthening suggests an increase in magnetic anisotropy in the interfacial Fe$_3$GeTe$_2$ layer, which can be attributed to the spin-orbit coupling (SOC) proximity effect induced by the adjacent WSe$_2$ layers. However, at much lower temperatures ($T<20$ K), a non-monotonic modification of the coercive field is observed, showing both reduction and enhancement, which depends on the thickness of the WSe$_2$ and Fe$_3$GeTe$_2$ layers. Moreover, an unconventional two-step magnetization process emerges in the heterostructure, indicating the short-range nature of SOC proximity effects. Our findings revealing proximity effects on 2D magnetism may shed light on the design of future spintronic and memory devices based on 2D magnetic heterostructures. △ Less

Submitted 28 April, 2024; originally announced April 2024.

Gate control of 2D magnetism in tri- and four-layers $\rm CrI_3$/graphene heterostructures

Authors: Ping Wang, Fuzhuo Lian, Renjun Du, Xiaofan Cai, Song Bao, Yaqing Han, Jingkuan Xiao, Kenji Watanabe, Takashi Taniguchi, Jinsheng Wen, Hongxin Yang, Alexander S. Mayorov, Lei Wang, Geliang Yu

Abstract: We conduct experimental studies on the electrical transport properties of monolayer graphene directly covered by a few layers of $\rm CrI_3$. We do not observe the expected magnetic exchange coupling in the graphene but instead discover proximity effects featuring gate and magnetic field tunability. The tunability of gate voltage is manifested in the alignment of the lowest conduction band of… ▽ More We conduct experimental studies on the electrical transport properties of monolayer graphene directly covered by a few layers of $\rm CrI_3$. We do not observe the expected magnetic exchange coupling in the graphene but instead discover proximity effects featuring gate and magnetic field tunability. The tunability of gate voltage is manifested in the alignment of the lowest conduction band of $\rm CrI_3$ and the Fermi level of graphene, which can be controlled by the gate voltage. The coexistence of the normal and atypical quantum Hall effects in our device also corresponds to gate-control modulation doping. The lowest conduction band depends on the magnetic states of the $\rm CrI_3$ and can be altered by the magnetic field, which corresponds to the resistance loops during back-and-forth sweeps of the magnetic field. Our results serve as a reference for exploiting the magnetic proximity effects in graphene. △ Less

Submitted 27 April, 2024; originally announced April 2024.

Ferroelectricity in twisted double bilayer graphene

Authors: Renjun Du, Jingkuan Xiao, Di Zhang, Xiaofan Cai, Siqi Jiang, Fuzhuo Lian, Kenji Watanabe, Takashi Taniguchi, Lei Wang, Geliang Yu

Abstract: Two-dimensional ferroelectrics can maintain vertical polarization up to room temperature, and are, therefore, promising for next-generation nonvolatile memories. Although natural two-dimensional ferroelectrics are few, moiré superlattices provide us with a generalized method to construct ferroelectrics from non-ferroelectric parent materials. We report a realization of ferroelectric hysteresis in… ▽ More Two-dimensional ferroelectrics can maintain vertical polarization up to room temperature, and are, therefore, promising for next-generation nonvolatile memories. Although natural two-dimensional ferroelectrics are few, moiré superlattices provide us with a generalized method to construct ferroelectrics from non-ferroelectric parent materials. We report a realization of ferroelectric hysteresis in a AB-BA stacked twisted double bilayer graphene (TDBG) system. The ferroelectric polarization is prominent at zero external displacement field and reduces upon increasing displacement fields. TDBG in the AB-BA configuration possesses a superlattice of non-centrosymmetric domains, exhibiting alternatively switchable polarities even without the assistance of any boron nitride layers; however, in the AB-AB stacking case, the development of polarized domains necessitates the presence of a second superlattice induced by the adjacent boron nitride layer. Therefore, twisted multilayer graphene systems offer us a fascinating field to explore two-dimensional ferroelectricity. △ Less

Submitted 27 April, 2024; originally announced April 2024.

Blood Works for Graphene Production

Authors: Xiaofan Cai, Ming Li, Chao Chen, Renjun Du, Zijing Guo, Ping Wang, Guodong Ma, Xinglong Wu, Zhiyuan Wang, Yaqing Han, Fuzhuo Lian, Jingkuan Xiao, Siqi Jiang, Lei Wang, Alexander S. Mayorov, Libo Gao, Kostya S. Novoselov, Geliang Yu

Abstract: Blood, a ubiquitous and fundamental carbohydrate material composed of plasma, red blood cells, white blood cells, and platelets, has been playing an important role in biology, life science, history, and religious study, while graphene has garnered significant attention due to its exceptional properties and extensive range of potential applications. Achieving environmentally friendly, cost-effectiv… ▽ More Blood, a ubiquitous and fundamental carbohydrate material composed of plasma, red blood cells, white blood cells, and platelets, has been playing an important role in biology, life science, history, and religious study, while graphene has garnered significant attention due to its exceptional properties and extensive range of potential applications. Achieving environmentally friendly, cost-effective growth using hybrid precursors and obtaining high-quality graphene through a straightforward CVD process has been traditionally considered mutually exclusive. This study demonstrates that we can produce high-quality graphene domains with controlled thickness through a one-step growth process at atmospheric pressure using blood as a precursor. Raman spectroscopy confirms the uniformity of the blood-grown graphene films, and observing the half-integer quantum Hall effect in the measured devices highlights its outstanding electronic properties. This unprecedented approach opens possibilities for blood application, facilitating an unconventional route in graphene growth applications. △ Less

Submitted 27 April, 2024; originally announced April 2024.

Superconducting Klein and anti-Klein tunneling in Weyl junctions

Authors: Jiajia Huang, Luyang Wang, Dao-Xin Yao

Abstract: Klein tunneling is an old topic in relativistic quantum physics, and has been observed recently in graphene where massless particles reside. Here, we propose a new heterostructure platform for Klein tunneling to occur, which consists of a Weyl-semimetal-based normal state/superconductor (NS) junction. By developing a Blonder-Tinkham-Klapwijk-like theory, we find that Klein tunneling occurs at norm… ▽ More Klein tunneling is an old topic in relativistic quantum physics, and has been observed recently in graphene where massless particles reside. Here, we propose a new heterostructure platform for Klein tunneling to occur, which consists of a Weyl-semimetal-based normal state/superconductor (NS) junction. By developing a Blonder-Tinkham-Klapwijk-like theory, we find that Klein tunneling occurs at normal incidence, which can lead to differential conductance doubling. If the (single) Weyl semimeltals are replaced by double Weyl semimetals, anti-Klein tunneling will take place of Klein tunneling. Our work provides a theoretical guide for the detection of (anti-)Klein tunneling in three-dimensional chiral NS junctions. △ Less

Submitted 25 April, 2024; originally announced April 2024.

Comments: 5 pages, 7 figures

Cobalt-based Co$_3$Mo3N/Co$_4$N/Co Metallic Heterostructure as a Highly Active Electrocatalyst for Alkaline Overall Water Splitting

Authors: Yuanwu Liu, Lirong Wang, René Hübner, Johannes Kresse, Xiaoming Zhang, Marielle Deconinick, Yana Vaynzof, Inez M. Weidinger, Alexander Eychmüller

Abstract: Alkaline water electrolysis is considered a commercially viable option for large-scale hydrogen production. However, this process still faces challenges due to the high voltage (>1.65 V at 10 mA cm$^{-2}$) and its limited stability at higher current densities due to the inefficient electron transport kinetics. Herein, a novel cobalt based metallic heterostructure (Co$_3$Mo3N/Co$_4$N/Co/Co) is desi… ▽ More Alkaline water electrolysis is considered a commercially viable option for large-scale hydrogen production. However, this process still faces challenges due to the high voltage (>1.65 V at 10 mA cm$^{-2}$) and its limited stability at higher current densities due to the inefficient electron transport kinetics. Herein, a novel cobalt based metallic heterostructure (Co$_3$Mo3N/Co$_4$N/Co/Co) is designed for application for water electrolysis. Operando Raman experiments reveal that the formation of Co$_3$Mo3N/Co$_4$N/Co heterointerface boosts the free water adsorption and dissociation, resulting in a surplus of protons available for subsequent hydrogen production. Furthermore, the altered electronic structure of Co$_3$Mo3N/Co$_4$N/Co heterointerface optimizes the ΔGH of nitrogen atoms at the interface. This synergistic effect between interfacial nitrogen atoms and metal phase cobalt creates highly efficient hydrogen evolution reaction (HER) active sites, thereby enhancing the overall performance. Additionally, the heterostructure exhibits a rapid OH- adsorption rate, coupled with a strong adsorption strength, leading to improved oxygen evolution reaction (OER) performance. Crucially, the metallic heterojunction facilitates fast electron transport, expediting the aforementioned reaction steps and ultimately improving the overall efficiency of water splitting. The water electrolyzer with Co$_3$Mo3N/Co$_4$N/Co/Co as a catalyst exhibits outstanding performance, requiring an impressively low cell voltage of 1.58 V at 10 mA cm$^{-2}$ and maintaining approximately 100% retention over a remarkable 100 h duration at 200 mA cm$^{-2}$. This performance significantly exceeds that of the commercial Pt/C || RuO2 electrolyzer. △ Less

Submitted 17 April, 2024; originally announced April 2024.

Multiple charge-density-wave gaps in LaSbTe and CeSbTe as revealed by ultrafast spectroscopy

Authors: Liye Cao, Cuiwei Zhang, Yi Yang, Lei Wang, BiXia Gao, Xinbo Wang, Youguo Shi, Rongyan Chen

Abstract: Utilizing ultrafast time-resolved pump-probe spectroscopy measurements, we investigate the photoinduced quasiparticle dynamics of the topological materials LaSbTe and CeSbTe. In LaSbTe, the relaxation of quasiparticles is dominated by two different mechanisms: electron-phonon coupling, and phonon-assisted electron-hole recombination. Significantly, the amplitude of photoinduced reflectivity relate… ▽ More Utilizing ultrafast time-resolved pump-probe spectroscopy measurements, we investigate the photoinduced quasiparticle dynamics of the topological materials LaSbTe and CeSbTe. In LaSbTe, the relaxation of quasiparticles is dominated by two different mechanisms: electron-phonon coupling, and phonon-assisted electron-hole recombination. Significantly, the amplitude of photoinduced reflectivity related to the former one shows two pronounced peaks at 156 K and 263 K, indicating the occurrence of two charge density wave (CDW) phase transitions. The ultrafast responses of CeSbTe share a lot of similarities with LaSbTe, and an additional CDW phase transition at 154 K is revealed in CeSbTe. However, the slower relaxation of CeSbTe exhibits an exotic behavior that deviates from the typical phonon-assisted electron-hole recombination process, probably due to the imbalance between the electron- and hole-type carriers. Unlike LaSbTe, the relaxation times of CeSbTe vary slightly with the pump power, inferring the possible participation of 4$f$ electron in the decay process. In addition, two oscillation modes around 1 THz and 3 THz are identified in both LaSbTe and CeSbTe, which are mostly likely to be coherent phonon modes. These findings unravel the existence of multiple CDW orders in LaSbTe and CeSbTe, offering insights into the underlying physics of these systems. △ Less

Submitted 17 April, 2024; originally announced April 2024.

Non-Hermitian butterfly spectra in a family of quasiperiodic lattices

Authors: Li Wang, Zhenbo Wang, Shu Chen

Abstract: We propose a family of exactly solvable quasiperiodic lattice models with analytical complex mobility edges, which can incorporate mosaic modulations as a straightforward generalization. By sweeping a potential tuning parameter $δ$, we demonstrate a kind of interesting butterfly-like spectra in complex energy plane, which depicts energy-dependent extended-localized transitions sharing a common exa… ▽ More We propose a family of exactly solvable quasiperiodic lattice models with analytical complex mobility edges, which can incorporate mosaic modulations as a straightforward generalization. By sweeping a potential tuning parameter $δ$, we demonstrate a kind of interesting butterfly-like spectra in complex energy plane, which depicts energy-dependent extended-localized transitions sharing a common exact non-Hermitian mobility edge. Applying Avila's global theory, we are able to analytically calculate the Lyapunov exponents and determine the mobility edges exactly. For the minimal model without mosaic modulation, a compactly analytic formula for the complex mobility edges is obtained, which, together with analytical estimation of the range of complex energy spectrum, gives the true mobility edge. The non-Hermitian mobility edge in complex energy plane is further verified by numerical calculations of fractal dimension and spatial distribution of wave functions. Tuning parameters of non-Hermitian potentials, we also investigate the variations of the non-Hermitian mobility edges and the corresponding butterfly spectra, which exhibit richness of spectrum structures. △ Less

Submitted 16 April, 2024; originally announced April 2024.

Comments: 12 pages, 11 figures

Surprising pressure-induced magnetic transformations from Helimagnetic order to Antiferromagnetic state in NiI2

Authors: Qiye Liu, Wenjie Su, Yue Gu, Xi Zhang, Xiuquan Xia, Le Wang, Ke Xiao, Xiaodong Cui, Xiaolong Zou, Bin Xi, Jia-Wei Mei, Jun-Feng Dai

Abstract: Interlayer magnetic interactions play a pivotal role in determining the magnetic arrangement within van der Waals (vdW) magnets, and the remarkable tunability of these interactions through applied pressure further enhances their significance. Here, we investigate NiI2 flakes, a representative vdW magnet, under hydrostatic pressures up to 11 GPa. We reveal a notable increase in magnetic transition… ▽ More Interlayer magnetic interactions play a pivotal role in determining the magnetic arrangement within van der Waals (vdW) magnets, and the remarkable tunability of these interactions through applied pressure further enhances their significance. Here, we investigate NiI2 flakes, a representative vdW magnet, under hydrostatic pressures up to 11 GPa. We reveal a notable increase in magnetic transition temperatures for both helimagnetic and antiferromagnetic states, and find that a reversible transition from helimagnetic to antiferromagnetic (AFM) phases at approximately 7 GPa challenges established theoretical and experimental expectations. While the increase in transition temperature aligns with pressure-enhanced overall exchange interaction strengths, we identify the significant role of the second-nearest neighbor interlayer interaction, which competes with intra-layer frustration and favors the AFM state as demonstrated in the Monte Carlo simulations. Experimental and simulated results converge on the existence of an intermediate helimagnetic ordered state in NiI2 before transitioning to the AFM state. These findings underscore the pivotal role of interlayer interactions in shaping the magnetic ground state, providing fresh perspectives for innovative applications in nanoscale magnetic device design. △ Less

Submitted 15 April, 2024; originally announced April 2024.

Robust spin order and fragile charge order in Na0.5CoO2 as revealed by time-resolved terahertz spectroscopy

Authors: X. Y. Zhou, S. J. Zhang, D. Wu, H. Wang, B. H. Li, S. F. Wu, Q. M. Liu, T. C. Hu, R. S. Li, J. Y. Yuan, S. X. Xu, Q. Wu, L. Yue, T. Dong, N. L. Wang

Abstract: Near-infrared (NIR) pump-terahertz (THz) probe spectroscopy is used to investigate the charge and spin exciations in a strongly correlated electron compound Na0.5CoO2. This compound exhibits a coexistence of various charge and spin orders arising from intricate interactions among charge, spin, and orbital degrees of freedom. NIR pulses create significantly diverse effects on the charge and spin or… ▽ More Near-infrared (NIR) pump-terahertz (THz) probe spectroscopy is used to investigate the charge and spin exciations in a strongly correlated electron compound Na0.5CoO2. This compound exhibits a coexistence of various charge and spin orders arising from intricate interactions among charge, spin, and orbital degrees of freedom. NIR pulses create significantly diverse effects on the charge and spin orders; while the charge order is easily melted,coherent magnon excitations are present in all fluences examined. Furthermore, a novel π phase shift of the coherent magnon oscillations is observed in the pump-induced change of the terahertz electric field between regions of increasing and decreasing field change. These results unequivocally illustrate that ultrashort laser pulses enable the disentanglement of different interactions within complex systems characterized by multiple orders, providing a fresh perspective on the interplay between itinerant and localized electrons within the Co 3d t2g multiplets. △ Less

Submitted 14 April, 2024; originally announced April 2024.

Coexistence of interacting charge density waves in a layered semiconductor

Authors: B. Q. Lv, Alfred Zong, Dong Wu, Zhengwei Nie, Yifan Su, Dongsung Choi, Batyr Ilyas, Bryan T. Fichera, Jiarui Li, Edoardo Baldini, Masataka Mogi, Y. -B. Huang, Hoi Chun Po, Sheng Meng, Yao Wang, N. L. Wang, Nuh Gedik

Abstract: Coexisting orders are key features of strongly correlated materials and underlie many intriguing phenomena from unconventional superconductivity to topological orders. Here, we report the coexistence of two interacting charge-density-wave (CDW) orders in EuTe4, a layered crystal that has drawn considerable attention owing to its anomalous thermal hysteresis and a semiconducting CDW state despite t… ▽ More Coexisting orders are key features of strongly correlated materials and underlie many intriguing phenomena from unconventional superconductivity to topological orders. Here, we report the coexistence of two interacting charge-density-wave (CDW) orders in EuTe4, a layered crystal that has drawn considerable attention owing to its anomalous thermal hysteresis and a semiconducting CDW state despite the absence of perfect FS nesting. By accessing unoccupied conduction bands with time- and angle-resolved photoemission measurements, we find that mono- and bi-layers of Te in the unit cell host different CDWs that are associated with distinct energy gaps. The two gaps display dichotomous evolutions following photoexcitation, where the larger bilayer CDW gap exhibits less renormalization and faster recovery. Surprisingly, the CDW in the Te monolayer displays an additional momentum-dependent gap renormalization that cannot be captured by density-functional theory calculations. This phenomenon is attributed to interlayer interactions between the two CDW orders, which account for the semiconducting nature of the equilibrium state. Our findings not only offer microscopic insights into the correlated ground state of EuTe4 but also provide a general non-equilibrium approach to understand coexisting, layer-dependent orders in a complex system. △ Less

Submitted 14 April, 2024; originally announced April 2024.

Comments: To appear in PRL

Journal ref: Physical Review Letters 132, 206401 (2024)

The photoinduced hidden metallic phase of monoclinic VO2 driven by local nucleation via a self-amplification process

Authors: Feng-Wu Guo, Wen-Hao Liu, Zhi Wang, Shu-Shen Li, Lin-Wang Wang, Jun-Wei Luo

Abstract: The insulator-to-metal transition (IMT) in vanadium dioxide (VO2) has garnered extensive attention for its potential applications in ultrafast switches, neuronal network architectures, and storage technologies. However, a significant controversy persists regarding the formation of the IMT, specifically concerning whether a complete structural phase transition from monoclinic (M1) to rutile (R) pha… ▽ More The insulator-to-metal transition (IMT) in vanadium dioxide (VO2) has garnered extensive attention for its potential applications in ultrafast switches, neuronal network architectures, and storage technologies. However, a significant controversy persists regarding the formation of the IMT, specifically concerning whether a complete structural phase transition from monoclinic (M1) to rutile (R) phase is necessary. Here we employ the real-time time-dependent density functional theory (rt-TDDFT) to track the dynamic evolution of atomic and electronic structures in photoexcited VO2, revealing the emergence of a long-lived monoclinic metal phase (MM) under low electronic excitation. The emergence of the metal phase in the monoclinic structure originates from the dissociation of the local V-V dimer, driven by the self-trapped and self-amplified dynamics of photoexcited holes, rather than by a pure electron-electron correction. On the other hand, the M1-to-R phase transition does appear at higher electronic excitation. Our findings validate the existence of MM phase and provide a comprehensive picture of the IMT in photoexcited VO2. △ Less

Submitted 11 April, 2024; originally announced April 2024.

Comments: 34 pages, 18 figures

Significant Photoluminescence Improvements from Bulk Germanium-Based Thin Films with Ultra-low Threading Dislocation Densities

Authors: Liming Wang, Gideon Kassa, Jifeng Liu, Guangrui Xia

Abstract: Bulk Ge crystals, characterized by significantly lower threading dislocation densities (TDD) than their epitaxial counterparts, emerge as optimal candidates for studying and improving Ge laser performance. Our study focused on the Ge thickness and TDD impacts on Ge's photoluminescence (PL). The PL peak intensity of a bulk Ge sample (TDD = 6000 cm^(-2), n-doping = 10^16 cm^(-3)) experiences a remar… ▽ More Bulk Ge crystals, characterized by significantly lower threading dislocation densities (TDD) than their epitaxial counterparts, emerge as optimal candidates for studying and improving Ge laser performance. Our study focused on the Ge thickness and TDD impacts on Ge's photoluminescence (PL). The PL peak intensity of a bulk Ge sample (TDD = 6000 cm^(-2), n-doping = 10^16 cm^(-3)) experiences a remarkable 32-fold increase as the thickness is reduced from 535 to 2 micron. This surpasses the PL peak intensity of a 0.75 micron thick epi-Ge on Si (biaxial tensile strain= 0.2 %, n-doping = 10^19 cm^(-3)) by a factor of 2.5. Furthermore, the PL peak intensity of a 405 micron thick zero-TDD bulk Ge sample (n-doping = 5 * 10^17 cm^(-3)) is ten times that of the 0.75 micron thick epi-Ge, rising to twelve times when thinned to 1 micron. The TDD reduction method is highly effective, which relaxes the requirements of high n-doping and stress in enhancing Ge laser performance and thus reduces the side effects of high optical absorption, high non-radiative recombination, bandgap narrowing, and large footprints associated with these two techniques. △ Less

Submitted 8 April, 2024; originally announced April 2024.

Quantum Phases of a Dipolar Fermi Gas with Laser-assisted Interwire Tunneling

Authors: Jin-Xin Li, Xue-Jing Feng, Ying-Ying Zhang, Jing-Xue Liu, Lu Qin, Zun-Lue Zhu, Xing-Dong Zhao, Liang-Liang Wang

Abstract: We systematically investigate unconventional superfluid phases of fermionic dipolar particles lying in a double-wire setup with laser-assisted interwire tunneling. Our numerical simulations, based on the nonlocal Kohn-Sham Bogoliubov-de Gennes equation, reveal the existence of a large Fulde-Ferrell-Larkin-Ovchinnikov (FFLO) region with a stripe phase under an imbalance of particle densities betwee… ▽ More We systematically investigate unconventional superfluid phases of fermionic dipolar particles lying in a double-wire setup with laser-assisted interwire tunneling. Our numerical simulations, based on the nonlocal Kohn-Sham Bogoliubov-de Gennes equation, reveal the existence of a large Fulde-Ferrell-Larkin-Ovchinnikov (FFLO) region with a stripe phase under an imbalance of particle densities between two wires. When the laser-assisted interwire tunneling is present, it induces a transition from the FFLO phase to the topological superfluid phase and the associated Majorana zero modes exhibit an oscillation structure, which is significantly enhanced by the long-range nature of the interwire dipolar interaction. This distinguishes itself from the results obtained with usual contact interaction and offers new opportunities for manipulating and reshaping Majorana zero modes by adjusting the degree of the nonlocality and the interwire separation. △ Less

Submitted 4 April, 2024; originally announced April 2024.

Comments: 8 pages, 6 figures

Revealing kinetically tuned atomic pathways for interfacial strain relaxation

Authors: Sophia B. Betzler, Daewon Lee, Sam Oaks-Leaf, Colin Ophus, Lin-Wang Wang, Mark Asta, David T. Limmer, Haimei Zheng

Abstract: Strain at interfaces may profoundly impact the microstructure and properties of materials; thus, it is a major consideration when designing and engineering materials. Dislocation formation is a commonly known mechanism to release mismatch strain at solid-solid interfaces. However, it is still unclear about how materials accommodate interfacial strain under drastically accelerated structural transf… ▽ More Strain at interfaces may profoundly impact the microstructure and properties of materials; thus, it is a major consideration when designing and engineering materials. Dislocation formation is a commonly known mechanism to release mismatch strain at solid-solid interfaces. However, it is still unclear about how materials accommodate interfacial strain under drastically accelerated structural transformation kinetics, since it is extremely challenging to directly observe the atomic structure evolution of fast-propagating interfaces. Utilizing liquid phase transmission electron microscopy (TEM), we have achieved atomic-scale imaging of hydrogen-induced phase transformations of palladium nanocrystals with different transformation speeds. Our observation reveals that the fast phase transformation occurs with an expanded interface of mixed $α$- and $β$-$\mathrm{PdH}_x$ phases, and tilting of (020) planes to accommodate mismatch strain. In contrast, slow phase transformations lead to sharp interfaces with slipping misfit dislocations. Our kinetic Monte Carlo simulations show that fast phase transformation pushes the system far-from-equilibrium, generically roughening the interface; however, a smooth boundary minimizes strain near-equilibrium. Unveiling the atomic pathways of transformations from near-equilibrium to far-from-equilibrium, which was previously possible only computationally, this work holds significant implications for engineering microstructure of materials through modulating solid-solid transformations in a wide range of kinetics. △ Less

Submitted 2 April, 2024; originally announced April 2024.

Comments: 6 pages, 4 figures, plus Methods and Supplementary Notes

Harnessing Interlayer Magnetic Coupling for Efficient, Field-Free Current-Induced Magnetization Switching in a Magnetic Insulator

Authors: Leran Wang, Alejandro O. Leon, Wenqing He, Zhongyu Liang, Xiaohan Li, Xiaoxiao Fang, Wenyun Yang, Licong Peng, Jinbo Yang, Caihua Wan, Gerrit E. W. Bauer, Zhaochu Luo

Abstract: Owing to the unique features of low Gilbert damping, long spin-diffusion lengths and zero Ohmic losses, magnetic insulators are promising candidate materials for next-generation spintronic applications. However, due to the localized magnetic moments and the complex metal-oxide interface between magnetic insulators and heavy metals, spin-functional Dzyaloshinskii-Moriya interactions or spin Hall an… ▽ More Owing to the unique features of low Gilbert damping, long spin-diffusion lengths and zero Ohmic losses, magnetic insulators are promising candidate materials for next-generation spintronic applications. However, due to the localized magnetic moments and the complex metal-oxide interface between magnetic insulators and heavy metals, spin-functional Dzyaloshinskii-Moriya interactions or spin Hall and Edelstein effects are weak, which diminishes the performance of these typical building blocks for spintronic devices. Here, we exploit the exchange coupling between metallic and insulating magnets for efficient electrical manipulation of heavy metal/magnetic insulator heterostructures. By inserting a thin Co layer, we enhance the spin-orbit torque efficiency by more than 20 times, which significantly reduces the switching current density. Moreover, we demonstrate field-free current-induced magnetization switching caused by a symmetry-breaking non-collinear magnetic texture. Our work launches magnetic insulators as an alternative platform for low-power spintronic devices. △ Less

Submitted 31 March, 2024; originally announced April 2024.

Feynman Diagrams as Computational Graphs

Authors: Pengcheng Hou, Tao Wang, Daniel Cerkoney, Xiansheng Cai, Zhiyi Li, Youjin Deng, Lei Wang, Kun Chen

Abstract: We propose a computational graph representation of high-order Feynman diagrams in Quantum Field Theory (QFT), applicable to any combination of spatial, temporal, momentum, and frequency domains. Utilizing the Dyson-Schwinger and parquet equations, our approach effectively organizes these diagrams into a fractal structure of tensor operations, significantly reducing computational redundancy. This a… ▽ More We propose a computational graph representation of high-order Feynman diagrams in Quantum Field Theory (QFT), applicable to any combination of spatial, temporal, momentum, and frequency domains. Utilizing the Dyson-Schwinger and parquet equations, our approach effectively organizes these diagrams into a fractal structure of tensor operations, significantly reducing computational redundancy. This approach not only streamlines the evaluation of complex diagrams but also facilitates an efficient implementation of the field-theoretic renormalization scheme, crucial for enhancing perturbative QFT calculations. Key to this advancement is the integration of Taylor-mode automatic differentiation, a key technique employed in machine learning packages to compute higher-order derivatives efficiently on computational graphs. To operationalize these concepts, we develop a Feynman diagram compiler that optimizes diagrams for various computational platforms, utilizing machine learning frameworks. Demonstrating this methodology's effectiveness, we apply it to the three-dimensional uniform electron gas problem, achieving unprecedented accuracy in calculating the quasiparticle effective mass at metal density. Our work demonstrates the synergy between QFT and machine learning, establishing a new avenue for applying AI techniques to complex quantum many-body problems. △ Less

Submitted 27 February, 2024; originally announced March 2024.

Interfacial magnetic spin Hall effect in van der Waals Fe3GeTe2/MoTe2 heterostructure

Authors: Yudi Dai, Junlin Xiong, Yanfeng Ge, Bin Cheng, Lizheng Wang, Pengfei Wang, Zenglin Liu, Shengnan Yan, Cuiwei Zhang, Xianghan Xu, Youguo Shi, Sang-Wook Cheong, Cong Xiao, Shengyuan A. Yang, Shi-Jun Liang, Feng Miao

Abstract: The spin Hall effect (SHE) allows efficient generation of spin polarization or spin current through charge current and plays a crucial role in the development of spintronics. While SHE typically occurs in non-magnetic materials and is time-reversal even, exploring time-reversal-odd (T-odd) SHE, which couples SHE to magnetization in ferromagnetic materials, offers a new charge-spin conversion mecha… ▽ More The spin Hall effect (SHE) allows efficient generation of spin polarization or spin current through charge current and plays a crucial role in the development of spintronics. While SHE typically occurs in non-magnetic materials and is time-reversal even, exploring time-reversal-odd (T-odd) SHE, which couples SHE to magnetization in ferromagnetic materials, offers a new charge-spin conversion mechanism with new functionalities. Here, we report the observation of giant T-odd SHE in Fe3GeTe2/MoTe2 van der Waals heterostructure, representing a previously unidentified interfacial magnetic spin Hall effect (interfacial-MSHE). Through rigorous symmetry analysis and theoretical calculations, we attribute the interfacial-MSHE to a symmetry-breaking induced spin current dipole at the vdW interface. Furthermore, we show that this linear effect can be used for implementing multiply-accumulate operations and binary convolutional neural networks with cascaded multi-terminal devices. Our findings uncover an interfacial T-odd charge-spin conversion mechanism with promising potential for energy-efficient in-memory computing. △ Less

Submitted 26 March, 2024; originally announced March 2024.

Journal ref: Nature Communications 15, 1129 (2024)

Band Structure and Fermi Surface Nesting in $LaSb_2$

Authors: Evan O'Leary, Lin-Lin Wang, Yevhen Kushnirenko, Ben Schrunk, Andrew Eaton, Paula Herrera-Siklody, Paul C. Canfield, Adam Kaminski

Abstract: We use high-resolution angle resolved photoemission spectroscopy (ARPES) and density functional theory (DFT) to investigate the electronic structure of the charge density wave (CDW) system LaSb$_2$. This compound is among an interesting group of materials that manifests both a CDW transition and lower temperature superconductivity. We find the DFT calculations to be in good agreement with our ARPE… ▽ More We use high-resolution angle resolved photoemission spectroscopy (ARPES) and density functional theory (DFT) to investigate the electronic structure of the charge density wave (CDW) system LaSb$_2$. This compound is among an interesting group of materials that manifests both a CDW transition and lower temperature superconductivity. We find the DFT calculations to be in good agreement with our ARPES data. The Fermi surface of LaSb$_2$ consists of two small hole pockets close to $Γ$ and four larger pockets near the Brillouin zone (BZ) boundary. The overall features of the Fermi surface do not vary with temperature. A saddle point is present at -0.19 $eV$ below the Fermi level at $Γ$. Critical points in band structure have more pronounced effects on a materials properties when they are located closer to the Fermi level, making doped LaSb$_2$ compounds a potential interesting subject of future research. Multiple peaks are present in the generalized, electronic susceptibility calculations indicating the presence of possible nesting vectors. We were not able to detect any signatures of the CDW transition at 355 K, pointing to the subtle nature of this transition. This is unusual, given that such a high transition temperature is expected to be associated with the presence of a large CDW gap. This is confirmed through investigation of the Fermi surface and through analysis of momentum distribution curves (MDC). It is possible that changes are subtle and occur below current sensitivity of our measurements. △ Less

Submitted 26 March, 2024; originally announced March 2024.

Utilizing (Al, Ga)2O3/Ga2O3 superlattices to measure cation vacancy diffusion and vacancy-concentration-dependent diffusion of Al, Sn, and Fe in \b{eta} -Ga2O3

Authors: Nathan D. Rock, Haobo Yang, Brian Eisner, Aviva Levin, Arkka Bhattacharyya, Sriram Krishnamoorthy, Praneeth Ranga, Michael A Walker, Larry Wang, Ming Kit Cheng, Wei Zhao, Michael A. Scarpulla

Abstract: Diffusion of native defects such as vacancies and their interactions with impurities are fundamental in semiconductor crystal growth, device processing, and long-term aging of equilibration and transient diffusion of vacancies are rarely investigated. We used aluminum-gallium oxide/gallium oxide superlattices (SLs) to detect and analyze transient diffusion of cation vacancies during annealing in O… ▽ More Diffusion of native defects such as vacancies and their interactions with impurities are fundamental in semiconductor crystal growth, device processing, and long-term aging of equilibration and transient diffusion of vacancies are rarely investigated. We used aluminum-gallium oxide/gallium oxide superlattices (SLs) to detect and analyze transient diffusion of cation vacancies during annealing in O2 at 1000-1100 C. Using a novel finite difference scheme for the diffusion equation with time- and space-varying diffusion constant, we extract diffusion constants for Al, Fe, and cation vacancies under the given conditions, including the vacancy concentration dependence for Al. indicate that vacancies present in the substrate transiently diffuse through the SLs, interacting with Sn as it also diffuses. In the case of SLs grown on Sn-doped beta-gallium oxide substrates, gradients observed in the extent of Al diffusion indicate that vacancies present in the substrate transiently diffuse through the SLs, interacting with Sn as it also diffuses. In the case of SLs grown on (010) Fe-doped substrates, the Al diffusion is uniform through the SLs, indicating a depth-uniform concentration of vacancies. We find no evidence in either case for the introduction of gallium vacancies from the free surface at rates sufficient to affect Al diffusion down to ppm concentrations, which has important bearing on the validity of typically-made assumptions of vacancy equilibration. Additionally, we show that unintentional impurities in Sn-doped gallium oxide such as Fe, Ni, Mn, Cu, and Li also diffuse towards the surface and accumulate. Many of these likely have fast interstitial diffusion modes capable of destabilizing devices over time, thus highlighting the importance of controlling unintentional impurities in beta-gallium oxide wafers. △ Less

Submitted 25 March, 2024; originally announced March 2024.

Comments: 11 pages, 4 figures, references a supplimental which will be submitted seperately

Electrically tunable, rapid spin-orbit torque induced modulation of colossal magnetoresistance in Mn$_3$Si$_2$Te$_6$ nanoflakes

Authors: Cheng Tan, Mingxun Deng, Yuanjun Yang, Linlin An, Weifeng Ge, Sultan Albarakati, Majid Panahandeh-Fard, James Partridge, Dimitrie Culcer, Bin Lei, Tao Wu, Xiangde Zhu, Mingliang Tian, Xianhui Chen, Rui-Qiang Wang, Lan Wang

Abstract: As a quasi-layered ferrimagnetic material, Mn$_3$Si$_2$Te$_6$ nanoflakes exhibit magnetoresistance behaviour that is fundamentally different from their bulk crystal counterparts. They offer three key properties crucial for spintronics. Firstly, at least 10^6 times faster response comparing to that exhibited by bulk crystals has been observed in current-controlled resistance and magnetoresistance.… ▽ More As a quasi-layered ferrimagnetic material, Mn$_3$Si$_2$Te$_6$ nanoflakes exhibit magnetoresistance behaviour that is fundamentally different from their bulk crystal counterparts. They offer three key properties crucial for spintronics. Firstly, at least 10^6 times faster response comparing to that exhibited by bulk crystals has been observed in current-controlled resistance and magnetoresistance. Secondly, ultra-low current density is required for resistance modulation (~ 5 A/cm$^2$). Thirdly, electrically gate-tunable magnetoresistance has been realized. Theoretical calculations reveal that the unique magnetoresistance behaviour in the Mn$_3$Si$_2$Te$_6$ nanoflakes arises from a magnetic field induced band gap shift across the Fermi level. The rapid current induced resistance variation is attributed to spin-orbit torque, an intrinsically ultra-fast process (~nanoseconds). This study suggests promising avenues for spintronic applications. In addition, it highlights Mn$_3$Si$_2$Te$_6$ nanoflakes as a suitable platform for investigating the intriguing physics underlying chiral orbital moments, magnetic field induced band variation and spin torque. △ Less

Submitted 25 March, 2024; originally announced March 2024.

Comments: 22 pages,4 figures

Ideal spin-polarized Weyl-half-semimetal with a single pair of Weyl points in half-Heusler compounds XCrTe (X=K, Rb)

Authors: Hongshuang Liu, Jin Cao, Zeying Zhang, Jiashuo Liang, Liying Wang, Shengyuan A. Yang

Abstract: Realizing ideal Weyl semimetal state with a single pair of Weyl points has been a long-sought goal in the field of topological semimetals. Here, we reveal such a state in the Cr-based half-Heusler compounds XCrTe (X=K, Rb). We show that these materials have a half metal ground state, with Fermi level crossing only one spin channel. Importantly, the Fermi surface is clean, consisting of the minimal… ▽ More Realizing ideal Weyl semimetal state with a single pair of Weyl points has been a long-sought goal in the field of topological semimetals. Here, we reveal such a state in the Cr-based half-Heusler compounds XCrTe (X=K, Rb). We show that these materials have a half metal ground state, with Fermi level crossing only one spin channel. Importantly, the Fermi surface is clean, consisting of the minimal number (i.e., a single pair) of spin-polarized Weyl points, so the state represents an ideal Weyl half semimetal. We show that the locations of the two Weyl points and the associated Chern vector can be flexibly tuned by rotating the magnetization vector. The minimal surface Fermi arc pattern and its contribution to anomalous Hall transport are discussed. Our finding offers an ideal material platform for exploring magnetic Weyl fermions, which will also facilitate the interplay between Weyl physics and spintronics. △ Less

Submitted 24 March, 2024; originally announced March 2024.