Showing 1–8 of 8 results for author: Kieninger, C

Silicon-Organic Hybrid (SOH) Mach-Zehnder Modulators for 100 GBd PAM4 Signaling With Sub-1 dB Phase-Shifter Loss

Authors: Clemens Kieninger, Christoph Füllner, Heiner Zwickel, Yasar Kutuvantavida, Juned N. Kemal, Carsten Eschenbaum, Delwin L. Elder, Larry R. Dalton, Wolfgang Freude, Sebastian Randel, Christian Koos

Abstract: We report on compact and efficient silicon-organic hybrid (SOH) Mach-Zehnder modulators (MZM) with low phase shifter insertion loss of 0.7 dB. The 280 $μ$m-long phase shifters feature a $π$-voltage-length product of 0.41 Vmm and a loss-efficiency product as small as $aU_πL = 1.0\space\rm{VdB}$. The device performance is demonstrated in a data transmission experiment, where we generate on-off-keyin… ▽ More We report on compact and efficient silicon-organic hybrid (SOH) Mach-Zehnder modulators (MZM) with low phase shifter insertion loss of 0.7 dB. The 280 $μ$m-long phase shifters feature a $π$-voltage-length product of 0.41 Vmm and a loss-efficiency product as small as $aU_πL = 1.0\space\rm{VdB}$. The device performance is demonstrated in a data transmission experiment, where we generate on-off-keying (OOK) and four-level pulse-amplitude modulation (PAM4) signals at symbol rates of 100 GBd, resulting in line rates of up to 200 Gbit/s. Bit error ratios are below the threshold for hard-decision forward error correction (HD-FEC) with 7 % coding overhead, leading to net data rates of 187 Gbit/s. This is the highest PAM4 data rate ever achieved for a sub-1 mm silicon photonic MZM. △ Less

Submitted 19 February, 2020; originally announced February 2020.

A verified equivalent-circuit model for slotwaveguide modulators

Authors: Heiner Zwickel, Stefan Singer, Clemens Kieninger, Yasar Kutuvantavida, Narek Muradyan, Thorsten Wahlbrink, Shiyoshi Yokoyama, Sebastian Randel, Wolfgang Freude, Christian Koos

Abstract: We formulate and experimentally validate an equivalent-circuit model based on distributed elements to describe the electric and electro-optic (EO) properties of travellingwave silicon-organic hybrid (SOH) slot-waveguide modulators. The model allows to reliably predict the small-signal EO frequency response of the modulators exploiting purely electrical measurements of the frequency-dependent RF tr… ▽ More We formulate and experimentally validate an equivalent-circuit model based on distributed elements to describe the electric and electro-optic (EO) properties of travellingwave silicon-organic hybrid (SOH) slot-waveguide modulators. The model allows to reliably predict the small-signal EO frequency response of the modulators exploiting purely electrical measurements of the frequency-dependent RF transmission characteristics. We experimentally verify the validity of our model, and we formulate design guidelines for an optimum trade-off between optical loss due to free-carrier absorption (FCA), electro-optic bandwidth, and π-voltage of SOH slot-waveguide modulators. △ Less

Submitted 10 December, 2019; originally announced January 2020.

Electrically packaged silicon-organic hybrid (SOH) I/Q-modulator for 64 GBd operation

Authors: Heiner Zwickel, Juned N. Kemal, Clemens Kieninger, Yasar Kutuvantavida, Jonas Rittershofer, Matthias Lauermann, Wolfgang Freude, Sebastian Randel, Christian Koos

Abstract: Silicon-organic hybrid (SOH) electro-optic (EO) modulators combine small footprint with low operating voltage and hence low power dissipation, thus lending themselves to on-chip integration of large-scale device arrays. Here we demonstrate an electrical packaging concept that enables high-density radio-frequency (RF) interfaces between on-chip SOH devices and external circuits. The concept combine… ▽ More Silicon-organic hybrid (SOH) electro-optic (EO) modulators combine small footprint with low operating voltage and hence low power dissipation, thus lending themselves to on-chip integration of large-scale device arrays. Here we demonstrate an electrical packaging concept that enables high-density radio-frequency (RF) interfaces between on-chip SOH devices and external circuits. The concept combines high-resolution $\mathrm{Al_2O_3}$ printed-circuit boards with technically simple metal wire bonds and is amenable to packaging of device arrays with small on-chip bond pad pitches. In a set of experiments, we characterize the performance of the underlying RF building blocks and we demonstrate the viability of the overall concept by generation of high-speed optical communication signals. Achieving line rates (symbols rates) of 128 Gbit/s (64 GBd) using quadrature-phase-shiftkeying (QPSK) modulation and of 160 Gbit/s (40 GBd) using 16-state quadrature-amplitudemodulation (16QAM), we believe that our demonstration represents an important step in bringing SOH modulators from proof-of-concept experiments to deployment in commercial environments. △ Less

Submitted 15 July, 2019; v1 submitted 30 July, 2018; originally announced September 2018.

Demonstration of long-term thermally stable Silicon-Organic Hybrid Modulators at 85 °C

Authors: Clemens Kieninger, Yasar Kutuvantavida, Hiroki Miura, Juned N. Kemal, Heiner Zwickel, Feng Qiu, Matthias Lauermann, Wolfgang Freude, Sebastian Randel, Shiyoshi Yokoyama, Christian Koos

Abstract: We report on the first demonstration of long-term thermally stable silicon-organic hybrid (SOH) modulators in accordance with Telcordia standards of high-temperature storage. The devices rely on an organic electro-optic sidechain polymer with a high glass transition temperature of 172 °C. In our high-temperature storage experiments at 85 °C, we find that the electro-optic activity converges to a c… ▽ More We report on the first demonstration of long-term thermally stable silicon-organic hybrid (SOH) modulators in accordance with Telcordia standards of high-temperature storage. The devices rely on an organic electro-optic sidechain polymer with a high glass transition temperature of 172 °C. In our high-temperature storage experiments at 85 °C, we find that the electro-optic activity converges to a constant long-term stable level after an initial decay. If we consider a burn-in time of 300 h, the π-voltage of the modulators increases on average by less than 15 % if we store the devices for additional 2400 h. The performance of the devices is demonstrated by generating high-quality 40 Gbit/s OOK signals both after the burn-in period and after extended high-temperature storage. △ Less

Submitted 2 July, 2018; originally announced July 2018.

Journal ref: Opt. Express 26 (2018) 27955-27964

Coherent modulation up to 100 GBd 16QAM using silicon-organic hybrid (SOH) devices

Authors: Stefan Wolf, Heiner Zwickel, Clemens Kieninger, Matthias Lauermann, Wladislaw Hartmann, Yasar Kutuvantavida, Wolfgang Freude, Sebastian Randel, Christian Koos

Abstract: We demonstrate the generation of higher-order modulation formats using silicon-based inphase/quadrature (IQ) modulators at symbol rates of up to 100 GBd. Our devices exploit the advantages of silicon-organic hybrid (SOH) integration, which combines silicon-on-insulator waveguides with highly efficient organic electro-optic (EO) cladding materials to enable small drive voltages and sub-millimeter d… ▽ More We demonstrate the generation of higher-order modulation formats using silicon-based inphase/quadrature (IQ) modulators at symbol rates of up to 100 GBd. Our devices exploit the advantages of silicon-organic hybrid (SOH) integration, which combines silicon-on-insulator waveguides with highly efficient organic electro-optic (EO) cladding materials to enable small drive voltages and sub-millimeter device lengths. In our experiments, we use an SOH IQ modulator with a π-voltage of 1.6 V to generate 100 GBd 16QAM signals. This is the first time that the 100 GBd mark is reached with an IQ modulator realized on a semiconductor substrate, leading to a single-polarization line rate of 400 Gbit/s. The peak-to-peak drive voltages amount to 1.5 Vpp, corresponding to an electrical energy dissipation in the modulator of only 25 fJ/bit. △ Less

Submitted 19 September, 2017; originally announced October 2017.

Ultra-High Electro-Optic Activity Demonstrated in a Silicon-Organic Hybrid (SOH) Modulator

Authors: Clemens Kieninger, Yasar Kutuvantavida, Delwin L. Elder, Stefan Wolf, Heiner Zwickel, Matthias Blaicher, Juned N. Kemal, Matthias Lauermann, Sebastian Randel, Wolfgang Freude, Larry R. Dalton, Christian Koos

Abstract: Efficient electro-optic (EO) modulators crucially rely on advanced materials that exhibit strong electro-optic activity and that can be integrated into high-speed and efficient phase shifter structures. In this paper, we demonstrate ultra-high in-device EO figures of merit of up to n3r33 = 2300 pm/V achieved in a silicon-organic hybrid (SOH) Mach-Zehnder Modulator (MZM) using the EO chromophore JR… ▽ More Efficient electro-optic (EO) modulators crucially rely on advanced materials that exhibit strong electro-optic activity and that can be integrated into high-speed and efficient phase shifter structures. In this paper, we demonstrate ultra-high in-device EO figures of merit of up to n3r33 = 2300 pm/V achieved in a silicon-organic hybrid (SOH) Mach-Zehnder Modulator (MZM) using the EO chromophore JRD1. This is the highest material-related in-device EO figure of merit hitherto achieved in a high-speed modulator at any operating wavelength. The π-voltage of the 1.5 mm-long device amounts to 210 mV, leading to a voltage-length product of UπL = 320 Vμm - the lowest value reported for MZM that are based on low-loss dielectric waveguides. The viability of the devices is demonstrated by generating high-quality on-off-keying (OOK) signals at 40 Gbit/s with Q factors in excess of 8 at a drive voltage as low as 140 mVpp. We expect that efficient high-speed EO modulators will not only have major impact in the field of optical communications, but will also open new avenues towards ultra-fast photonic-electronic signal processing. △ Less

Submitted 23 April, 2018; v1 submitted 19 September, 2017; originally announced September 2017.

Comments: 9 pages, 4 figures

Journal ref: Optica 5 (2018) 739-748

Silicon-Organic Hybrid (SOH) Mach-Zehnder Modulators for 100 Gbit/s On-Off Keying

Authors: Stefan Wolf, Heiner Zwickel, Wladislaw Hartmann, Matthias Lauermann, Yasar Kutuvantavida, Clemens Kieninger, Lars Altenhain, Rolf Schmid, Jingdong Luo, Alex K. -Y. Jen, Sebastian Randel, Wolfgang Freude, Christian Koos

Abstract: Electro-optic modulators for high-speed on-off keying (OOK) are key components of short- and mediumreach interconnects in data-center networks. Besides small footprint and cost-efficient large-scale production, small drive voltages and ultra-low power consumption are of paramount importance for such devices. Here we demonstrate that the concept of silicon-organic hybrid (SOH) integration is perfec… ▽ More Electro-optic modulators for high-speed on-off keying (OOK) are key components of short- and mediumreach interconnects in data-center networks. Besides small footprint and cost-efficient large-scale production, small drive voltages and ultra-low power consumption are of paramount importance for such devices. Here we demonstrate that the concept of silicon-organic hybrid (SOH) integration is perfectly suited for meeting these challenges. The approach combines the unique processing advantages of large-scale silicon photonics with unrivalled electro-optic (EO) coefficients obtained by molecular engineering of organic materials. In our proof-of-concept experiments, we demonstrate generation and transmission of OOK signals with line rates of up to 100 Gbit/s using a 1.1 mm-long SOH Mach-Zehnder modulator (MZM) which features a π-voltage of only 0.9 V. This experiment represents not only the first demonstration of 100 Gbit/s OOK on the silicon photonic platform, but also leads to the lowest drive voltage and energy consumption ever demonstrated at this data rate for a semiconductor-based device. We support our experimental results by a theoretical analysis and show that the nonlinear transfer characteristic of the MZM can be exploited to overcome bandwidth limitations of the modulator and of the electric driver circuitry. The devices are fabricated in a commercial silicon photonics line and can hence be combined with the full portfolio of standard silicon photonic devices. We expect that high-speed power-efficient SOH modulators may have transformative impact on short-reach optical networks, enabling compact transceivers with unprecedented energy efficiency that will be at the heart of future Ethernet interfaces at Tbit/s data rates. △ Less

Submitted 12 September, 2017; v1 submitted 1 September, 2017; originally announced September 2017.

Second-order nonlinear optical metamaterials: ABC-type nanolaminates

Authors: Luca Alloatti, Clemens Kieninger, Andreas Froelich, Matthias Lauermann, Tobias Frenzel, Kira Koehnle, Wolfgang Freude, Juerg Leuthold, Martin Wegener, Christian Koos

Abstract: Structuring optical materials on a nanometer scale can lead to artificial effective media, or metamaterials, with strongly altered optical behavior. Metamaterials can provide a wide range of linear optical properties such as negative refractive index, hyperbolic dispersion, or magnetic behavior at optical frequencies. Nonlinear optical properties, however, have only been demonstrated for patterned… ▽ More Structuring optical materials on a nanometer scale can lead to artificial effective media, or metamaterials, with strongly altered optical behavior. Metamaterials can provide a wide range of linear optical properties such as negative refractive index, hyperbolic dispersion, or magnetic behavior at optical frequencies. Nonlinear optical properties, however, have only been demonstrated for patterned metallic films which suffer from high optical losses. Here we show that second-order nonlinear metamaterials can also be obtained from non-metallic centrosymmetric constituents with inherently low optical absorption. In our proof-of-principle experiments, we have iterated atomic-layer deposition (ALD) of three different constituents, A = Al$_2$O$_3$, B = TiO$_2$ and C = HfO$_2$. The centrosymmetry of the resulting ABC stack is broken since the ABC and the inverted CBA sequences are not equivalent - a necessary condition for non-zero second-order nonlinearity. To the best of our knowledge, this is the first realization of a bulk nonlinear optical metamaterial. △ Less

Submitted 3 April, 2015; v1 submitted 1 April, 2015; originally announced April 2015.

Comments: 3 figures, 11 pages; v2: corrected email

Journal ref: Appl. Phys. Lett. 107, 121903 (2015)