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Highly tunable room-temperature plexcitons in monolayer WSe2 /gap-plasmon nanocavities
Authors:
Thomas P. Darlington,
Mahfujur Rahaman,
Kevin W. C. Kwock,
Emanuil Yanev,
Xuehao Wu,
Luke N. Holtzman,
Madisen Holbrook,
Gwangwoo Kim,
Kyung Yeol Ma,
Hyeon Suk Shin,
Andrey Krayev,
Matthew Strasbourg,
Nicholas J. Borys,
D. N. Basov,
Katayun Barmak,
James C. Hone,
Abhay N. Pasupathy,
Deep Jariwala,
P. James Schuck
Abstract:
The advancement of quantum photonic technologies relies on the ability to precisely control the degrees of freedom of optically active states. Here, we realize real-time, room-temperature tunable strong plasmon-exciton coupling in 2D semiconductor monolayers enabled by a general approach that combines strain engineering plus force- and voltage-adjustable plasmonic nanocavities. We show that the ex…
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The advancement of quantum photonic technologies relies on the ability to precisely control the degrees of freedom of optically active states. Here, we realize real-time, room-temperature tunable strong plasmon-exciton coupling in 2D semiconductor monolayers enabled by a general approach that combines strain engineering plus force- and voltage-adjustable plasmonic nanocavities. We show that the exciton energy and nanocavity plasmon resonance can be controllably toggled in concert by applying pressure with a plasmonic nanoprobe, allowing in operando control of detuning and coupling strength, with observed Rabi splittings >100 meV. Leveraging correlated force spectroscopy, nano-photoluminescence (nano-PL) and nano-Raman measurements, augmented with electromagnetic simulations, we identify distinct polariton bands and dark polariton states, and map their evolution as a function of nanogap and strain tuning. Uniquely, the system allows for manipulation of coupling strength over a range of cavity parameters without dramatically altering the detuning. Further, we establish that the tunable strong coupling is robust under multiple pressing cycles and repeated experiments over multiple nanobubbles. Finally, we show that the nanogap size can be directly modulated via an applied DC voltage between the substrate and plasmonic tip, highlighting the inherent nature of the concept as a plexcitonic nano-electro-mechanical system (NEMS). Our work demonstrates the potential to precisely control and tailor plexciton states localized in monolayer (1L) transition metal dichalcogenides (TMDs), paving the way for on-chip polariton-based nanophotonic applications spanning quantum information processing to photochemistry.
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Submitted 4 November, 2023;
originally announced November 2023.
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MoS$_{2}$/Al$_{0.68}$Sc$_{0.32}$N negative capacitance field-effect transistors
Authors:
Seunguk Song,
Kwan-Ho Kim,
Srikrishna Chakravarthi,
Zirun Han,
Gwangwoo Kim,
Kyung Yeol Ma,
Hyeon Suk Shin,
Roy H. Olsson III,
Deep Jariwala
Abstract:
Al$_{0.68}$Sc$_{0.32}$N (AlScN) has gained attention for its outstanding ferroelectric properties, including a high coercive field and high remnant polarization. Although AlScN-based ferroelectric field-effect transistors (FETs) for memory applications have been demonstrated, a device for logic applications with minimal hysteresis has not been reported. This study reports on the transport characte…
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Al$_{0.68}$Sc$_{0.32}$N (AlScN) has gained attention for its outstanding ferroelectric properties, including a high coercive field and high remnant polarization. Although AlScN-based ferroelectric field-effect transistors (FETs) for memory applications have been demonstrated, a device for logic applications with minimal hysteresis has not been reported. This study reports on the transport characteristics of a MoS$_{2}$ negative capacitance FET (NCFET) based on an AlScN ferroelectric material. We experimentally demonstrate the effect of a dielectric layer in the gate stack on the memory window and subthreshold swing (SS) of the NCFET. We show that the hysteresis behavior of transfer characteristics in the NCFET can be minimized with the inclusion of a non-ferroelectric dielectric layer, which fulfills the capacitance-matching condition. Remarkably, we also observe the NC effect in MoS$_{2}$/AlScN NCFETs arrays based on large-area monolayer MoS$_{2}$ synthesized by chemical vapor deposition, showing the SS values smaller than its thermionic limit (~36-60 mV/dec) and minimal variation in threshold voltages (< 20 mV).
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Submitted 31 July, 2023;
originally announced August 2023.
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Exciton Confinement in Two-Dimensional, In-Plane, Quantum Heterostructures
Authors:
Gwangwoo Kim,
Benjamin Huet,
Christopher E. Stevens,
Kiyoung Jo,
Jeng-Yuan Tsai,
Saiphaneendra Bachu,
Meghan Leger,
Kyung Yeol Ma,
Nicholas R. Glavin,
Hyeon Suk Shin,
Nasim Alem,
Qimin Yan,
Joshua R. Hedrickson,
Joan M. Redwing,
Deep Jariwala
Abstract:
Two-dimensional (2D) semiconductors are promising candidates for optoelectronic application and quantum information processes due to their inherent out-of-plane 2D confinement. In addition, they offer the possibility of achieving low-dimensional in-plane exciton confinement, similar to zero-dimensional quantum dots, with intriguing optical and electronic properties via strain or composition engine…
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Two-dimensional (2D) semiconductors are promising candidates for optoelectronic application and quantum information processes due to their inherent out-of-plane 2D confinement. In addition, they offer the possibility of achieving low-dimensional in-plane exciton confinement, similar to zero-dimensional quantum dots, with intriguing optical and electronic properties via strain or composition engineering. However, realizing such laterally confined 2D monolayers and systematically controlling size-dependent optical properties remain significant challenges. Here, we report the observation of lateral confinement of excitons in epitaxially grown in-plane MoSe2 quantum dots (~15-60 nm wide) inside a continuous matrix of WSe2 monolayer film via a sequential epitaxial growth process. Various optical spectroscopy techniques reveal the size-dependent exciton confinement in the MoSe2 monolayer quantum dots with exciton blue shift (12-40 meV) at a low temperature as compared to continuous monolayer MoSe2. Finally, single-photon emission was also observed from the smallest dots at 1.6 K. Our study opens the door to compositionally engineered, tunable, in-plane quantum light sources in 2D semiconductors.
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Submitted 12 July, 2023;
originally announced July 2023.
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First High-speed Video Camera Observations of a Lightning Flash Associated with a Downward Terrestrial Gamma-ray Flash
Authors:
R. U. Abbasi,
M. M. F. Saba,
J. W. Belz,
P. R. Krehbiel,
W. Rison,
N. Kieu,
D. R. da Silva,
Dan Rodeheffer,
M. A. Stanley,
J. Remington,
J. Mazich,
R. LeVon,
K. Smout,
A. Petrizze,
T. Abu-Zayyad,
M. Allen,
Y. Arai,
R. Arimura,
E. Barcikowski,
D. R. Bergman,
S. A. Blake,
I. Buckland,
B. G. Cheon,
M. Chikawa,
T. Fujii
, et al. (127 additional authors not shown)
Abstract:
In this paper, we present the first high-speed video observation of a cloud-to-ground lightning flash and its associated downward-directed Terrestrial Gamma-ray Flash (TGF). The optical emission of the event was observed by a high-speed video camera running at 40,000 frames per second in conjunction with the Telescope Array Surface Detector, Lightning Mapping Array, interferometer, electric-field…
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In this paper, we present the first high-speed video observation of a cloud-to-ground lightning flash and its associated downward-directed Terrestrial Gamma-ray Flash (TGF). The optical emission of the event was observed by a high-speed video camera running at 40,000 frames per second in conjunction with the Telescope Array Surface Detector, Lightning Mapping Array, interferometer, electric-field fast antenna, and the National Lightning Detection Network. The cloud-to-ground flash associated with the observed TGF was formed by a fast downward leader followed by a very intense return stroke peak current of -154 kA. The TGF occurred while the downward leader was below cloud base, and even when it was halfway in its propagation to ground. The suite of gamma-ray and lightning instruments, timing resolution, and source proximity offer us detailed information and therefore a unique look at the TGF phenomena.
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Submitted 9 August, 2023; v1 submitted 10 May, 2022;
originally announced May 2022.
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Observation of Variations in Cosmic Ray Single Count Rates During Thunderstorms and Implications for Large-Scale Electric Field Changes
Authors:
R. U. Abbasi,
T. Abu-Zayyad,
M. Allen,
Y. Arai,
R. Arimura,
E. Barcikowski,
J. W. Belz,
D. R. Bergman,
S. A. Blake,
I. Buckland,
R. Cady,
B. G. Cheon,
J. Chiba,
M. Chikawa,
T. Fujii,
K. Fujisue,
K. Fujita,
R. Fujiwara,
M. Fukushima,
R. Fukushima,
G. Furlich,
N. Globus,
R. Gonzalez,
W. Hanlon,
M. Hayashi
, et al. (140 additional authors not shown)
Abstract:
We present the first observation by the Telescope Array Surface Detector (TASD) of the effect of thunderstorms on the development of cosmic ray single count rate intensity over a 700 km$^{2}$ area. Observations of variations in the secondary low-energy cosmic ray counting rate, using the TASD, allow us to study the electric field inside thunderstorms, on a large scale, as it progresses on top of t…
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We present the first observation by the Telescope Array Surface Detector (TASD) of the effect of thunderstorms on the development of cosmic ray single count rate intensity over a 700 km$^{2}$ area. Observations of variations in the secondary low-energy cosmic ray counting rate, using the TASD, allow us to study the electric field inside thunderstorms, on a large scale, as it progresses on top of the 700 km$^{2}$ detector, without dealing with the limitation of narrow exposure in time and space using balloons and aircraft detectors. In this work, variations in the cosmic ray intensity (single count rate) using the TASD, were studied and found to be on average at the $\sim(0.5-1)\%$ and up to 2\% level. These observations were found to be both in excess and in deficit. They were also found to be correlated with lightning in addition to thunderstorms. These variations lasted for tens of minutes; their footprint on the ground ranged from 6 to 24 km in diameter and moved in the same direction as the thunderstorm. With the use of simple electric field models inside the cloud and between cloud to ground, the observed variations in the cosmic ray single count rate were recreated using CORSIKA simulations. Depending on the electric field model used and the direction of the electric field in that model, the electric field magnitude that reproduces the observed low-energy cosmic ray single count rate variations was found to be approximately between 0.2-0.4 GV. This in turn allows us to get a reasonable insight on the electric field and its effect on cosmic ray air showers inside thunderstorms.
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Submitted 18 November, 2021;
originally announced November 2021.
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Surface detectors of the TAx4 experiment
Authors:
Telescope Array Collaboration,
R. U. Abbasi,
M. Abe,
T. Abu-Zayyad,
M. Allen,
Y. Arai,
E. Barcikowski,
J. W. Belz,
D. R. Bergman,
S. A. Blake,
R. Cady,
B. G. Cheon,
J. Chiba,
M. Chikawa,
T. Fujii,
K. Fujisue,
K. Fujita,
R. Fujiwara,
M. Fukushima,
R. Fukushima,
G. Furlich,
W. Hanlon,
M. Hayashi,
N. Hayashida,
K. Hibino
, et al. (124 additional authors not shown)
Abstract:
Telescope Array (TA) is the largest ultrahigh energy cosmic-ray (UHECR) observatory in the Northern Hemisphere. It explores the origin of UHECRs by measuring their energy spectrum, arrival-direction distribution, and mass composition using a surface detector (SD) array covering approximately 700 km$^2$ and fluorescence detector (FD) stations. TA has found evidence for a cluster of cosmic rays with…
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Telescope Array (TA) is the largest ultrahigh energy cosmic-ray (UHECR) observatory in the Northern Hemisphere. It explores the origin of UHECRs by measuring their energy spectrum, arrival-direction distribution, and mass composition using a surface detector (SD) array covering approximately 700 km$^2$ and fluorescence detector (FD) stations. TA has found evidence for a cluster of cosmic rays with energies greater than 57 EeV. In order to confirm this evidence with more data, it is necessary to increase the data collection rate.We have begun building an expansion of TA that we call TAx4. In this paper, we explain the motivation, design, technical features, and expected performance of the TAx4 SD. We also present TAx4's current status and examples of the data that have already been collected.
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Submitted 1 March, 2021;
originally announced March 2021.
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Observations of the Origin of Downward Terrestrial Gamma-Ray Flashes
Authors:
J. W. Belz,
P. R. Krehbiel,
J. Remington,
M. A. Stanley,
R. U. Abbasi,
R. LeVon,
W. Rison,
D. Rodeheffer,
the Telescope Array Scientific Collaboration,
:,
T. Abu-Zayyad,
M. Allen,
E. Barcikowski,
D. R. Bergman,
S. A. Blake,
M. Byrne,
R. Cady,
B. G. Cheon,
M. Chikawa,
A. di Matteo,
T. Fujii,
K. Fujita,
R. Fujiwara,
M. Fukushima,
G. Furlich
, et al. (116 additional authors not shown)
Abstract:
In this paper we report the first close, high-resolution observations of downward-directed terrestrial gamma-ray flashes (TGFs) detected by the large-area Telescope Array cosmic ray observatory, obtained in conjunction with broadband VHF interferometer and fast electric field change measurements of the parent discharge. The results show that the TGFs occur during strong initial breakdown pulses (I…
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In this paper we report the first close, high-resolution observations of downward-directed terrestrial gamma-ray flashes (TGFs) detected by the large-area Telescope Array cosmic ray observatory, obtained in conjunction with broadband VHF interferometer and fast electric field change measurements of the parent discharge. The results show that the TGFs occur during strong initial breakdown pulses (IBPs) in the first few milliseconds of negative cloud-to-ground and low-altitude intracloud flashes, and that the IBPs are produced by a newly-identified streamer-based discharge process called fast negative breakdown. The observations indicate the relativistic runaway electron avalanches (RREAs) responsible for producing the TGFs are initiated by embedded spark-like transient conducting events (TCEs) within the fast streamer system, and potentially also by individual fast streamers themselves. The TCEs are inferred to be the cause of impulsive sub-pulses that are characteristic features of classic IBP sferics. Additional development of the avalanches would be facilitated by the enhanced electric field ahead of the advancing front of the fast negative breakdown. In addition to showing the nature of IBPs and their enigmatic sub-pulses, the observations also provide a possible explanation for the unsolved question of how the streamer to leader transition occurs during the initial negative breakdown, namely as a result of strong currents flowing in the final stage of successive IBPs, extending backward through both the IBP itself and the negative streamer breakdown preceding the IBP.
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Submitted 12 October, 2020; v1 submitted 29 September, 2020;
originally announced September 2020.
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Strong Exciton-Photon Coupling in Large Area MoSe$_2$ and WSe$_2$ Heterostructures Fabricated from Two-Dimensional Materials Grown by Chemical Vapor Deposition
Authors:
Daniel J. Gillard,
Armando Genco,
Seongjoon Ahn,
Thomas P. Lyons,
Kyung Yeol Ma,
A-Rang Jang,
Toby Severs Millard,
Aurelien A. P. Trichet,
Rahul Jayaprakash,
Kyriacos Georgiou,
David G. Lidzey,
Jason M. Smith,
Hyeon Suk Shin,
Alexander I. Tartakovskii
Abstract:
Two-dimensional semiconducting transition metal dichalcogenides embedded in optical microcavities in the strong exciton-photon coupling regime may lead to promising applications in spin and valley addressable polaritonic logic gates and circuits. One significant obstacle for their realization is the inherent lack of scalability associated with the mechanical exfoliation commonly used for fabricati…
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Two-dimensional semiconducting transition metal dichalcogenides embedded in optical microcavities in the strong exciton-photon coupling regime may lead to promising applications in spin and valley addressable polaritonic logic gates and circuits. One significant obstacle for their realization is the inherent lack of scalability associated with the mechanical exfoliation commonly used for fabrication of two-dimensional materials and their heterostructures. Chemical vapor deposition offers an alternative scalable fabrication method for both monolayer semiconductors and other two-dimensional materials, such as hexagonal boron nitride. Observation of the strong light-matter coupling in chemical vapor grown transition metal dichalcogenides has been demonstrated so far in a handful of experiments with monolayer molybdenum disulfide and tungsten disulfide. Here we instead demonstrate the strong exciton-photon coupling in microcavities comprising large area transition metal dichalcogenide / hexagonal boron nitride heterostructures made from chemical vapor deposition grown molybdenum diselenide and tungsten diselenide encapsulated on one or both sides in continuous few-layer boron nitride films also grown by chemical vapor deposition. These transition metal dichalcogenide / hexagonal boron nitride heterostructures show high optical quality comparable with mechanically exfoliated samples, allowing operation in the strong coupling regime in a wide range of temperatures down to 4 Kelvin in tunable and monolithic microcavities, and demonstrating the possibility to successfully develop large area transition metal dichalcogenide based polariton devices.
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Submitted 20 August, 2020;
originally announced August 2020.
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Large Area Automated Characterisation of Chemical Vapour Deposition Grown Monolayer Transition Metal Dichalcogenides Through Photoluminescence Imaging
Authors:
T. Severs Millard,
A. Genco,
E. M. Alexeev,
S. Randerson,
S. Ahn,
A. Jang,
H. S. Shin,
A. I. Tartakovskii
Abstract:
CVD growth is capable of producing multiple single crystal islands of atomically thin TMDs over large area substrates, with potential control of their morphology, lateral size, and epitaxial alignment to substrates with hexagonal symmetry. Subsequent merging of epitaxial domains can lead to single-crystal monolayer sheets - a step towards scalable production of high quality TMDs. For CVD growth to…
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CVD growth is capable of producing multiple single crystal islands of atomically thin TMDs over large area substrates, with potential control of their morphology, lateral size, and epitaxial alignment to substrates with hexagonal symmetry. Subsequent merging of epitaxial domains can lead to single-crystal monolayer sheets - a step towards scalable production of high quality TMDs. For CVD growth to be effectively used for such production it is necessary to be able to rapidly assess the quality of material across entire large area substrates. To date characterisation has been limited to sub 0.1 mm2 areas, where the properties measured are not necessarily representative of an entire sample. Here, we apply photoluminescence (PL) imaging and computer vision techniques to create an automated analysis for large area samples of semiconducting TMDs, measuring the properties of island size, density of islands, relative PL intensity and homogeneity, and orientation of triangular domains. The analysis is applied to 20x magnification optical microscopy images that completely map samples of WSe2 on hBN, 5.0 mm x 5.0 mm in size, and MoSe2-WS2 on SiO2/Si, 11.2 mm x 5.8 mm in size. For the latter sample 100,245 objects were identified and their properties measured, with an orientation extracted from 27,779 objects that displayed a triangular morphology. In the substrates studied, two prevailing orientations of epitaxial growth were observed in WSe2 grown on hBN and four predominant orientations were observed in MoSe2, initially grown on c-plane sapphire. The proposed analysis will greatly reduce the time needed to study freshly synthesised material over large area substrates and provide feedback to optimise growth conditions, advancing techniques to produce high quality TMD monolayer sheets for commercial applications.
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Submitted 9 November, 2019;
originally announced November 2019.
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Quantum efficiency enhancement of bialkali photocathodes by an atomically thin layer on substrates
Authors:
Hisato Yamaguchi,
Fangze Liu,
Jeffrey DeFazio,
Mengjia Gaowei,
Lei Guo,
Anna Alexander,
Seong In Yoon,
Chohee Hyun,
Matthew Critchley,
John Sinsheimer,
Vitaly Pavlenko,
Derek Strom,
Kevin L. Jensen,
Daniel Finkenstadt,
Hyeon Suk Shin,
Masahiro Yamamoto,
John Smedley,
Nathan A. Moody
Abstract:
We report quantum efficiency (QE) enhancements in accelerator technology relevant antimonide photocathodes (K2CsSb) by interfacing them with atomically thin two-dimensional (2D) crystal layers. The enhancement occurs in a reflection mode, when a 2D crystal is placed in between the photocathodes and optically reflective substrates. Specifically, the peak QE at 405 nm (3.1 eV) increases by a relativ…
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We report quantum efficiency (QE) enhancements in accelerator technology relevant antimonide photocathodes (K2CsSb) by interfacing them with atomically thin two-dimensional (2D) crystal layers. The enhancement occurs in a reflection mode, when a 2D crystal is placed in between the photocathodes and optically reflective substrates. Specifically, the peak QE at 405 nm (3.1 eV) increases by a relative 10 percent, while the long wavelength response at 633 nm (2.0 eV) increases by a relative 36 percent on average and up to 80 percent at localized hot spot regions when photocathodes are deposited onto graphene coated stainless steel. There is a similar effect for photocathodes deposited on hexagonal boron nitride monolayer coatings using nickel substrates. The enhancement does not occur when reflective substrates are replaced with optically transparent sapphire. Optical transmission, X-ray diffraction (XRD) and X-ray fluorescence (XRF) revealed that thickness, crystal orientation, quality and elemental stoichiometry of photocathodes do not appreciably change due to 2D crystal coatings. These results suggest optical interactions are responsible for the QE enhancements when 2D crystal sublayers are present on reflective substrates, and provide a pathway toward a simple method of QE enhancement in semiconductor photocathodes by an atomically thin 2D crystal on substrates.
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Submitted 2 October, 2019;
originally announced October 2019.
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Resonantly hybridised excitons in moiré superlattices in van der Waals heterostructures
Authors:
Evgeny M. Alexeev,
David A. Ruiz-Tijerina,
Mark Danovich,
Matthew J. Hamer,
Daniel J. Terry,
Pramoda K. Nayak,
Seongjoon Ahn,
Sangyeon Pak,
Juwon Lee,
Jung Inn Sohn,
Maciej R. Molas,
Maciej Koperski,
Kenji Watanabe,
Takashi Taniguchi,
Kostya S. Novoselov,
Roman V. Gorbachev,
Hyeon Suk Shin,
Vladimir I. Fal'ko,
Alexander I. Tartakovskii
Abstract:
Atomically-thin layers of two-dimensional materials can be assembled in vertical stacks held together by relatively weak van der Waals forces, allowing for coupling between monolayer crystals with incommensurate lattices and arbitrary mutual rotation. A profound consequence of using these degrees of freedom is the emergence of an overarching periodicity in the local atomic registry of the constitu…
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Atomically-thin layers of two-dimensional materials can be assembled in vertical stacks held together by relatively weak van der Waals forces, allowing for coupling between monolayer crystals with incommensurate lattices and arbitrary mutual rotation. A profound consequence of using these degrees of freedom is the emergence of an overarching periodicity in the local atomic registry of the constituent crystal structures, known as a moiré superlattice. Its presence in graphene/hexagonal boron nitride (hBN) structures led to the observation of electronic minibands, whereas its effect enhanced by interlayer resonant conditions in twisted graphene bilayers culminated in the observation of the superconductor-insulator transition at magic twist angles. Here, we demonstrate that, in semiconducting heterostructures built of incommensurate MoSe2 and WS2 monolayers, excitonic bands can hybridise, resulting in the resonant enhancement of the moiré superlattice effects. MoSe2 and WS2 are specifically chosen for the near degeneracy of their conduction band edges to promote the hybridisation of intra- and interlayer excitons, which manifests itself through a pronounced exciton energy shift as a periodic function of the interlayer rotation angle. This occurs as hybridised excitons (hX) are formed by holes residing in MoSe2 bound to a twist-dependent superposition of electron states in the adjacent monolayers. For heterostructures with almost aligned pairs of monolayer crystals, resonant mixing of the electron states leads to pronounced effects of the heterostructure's geometrical moiré pattern on the hX dispersion and optical spectrum. Our findings underpin novel strategies for band-structure engineering in semiconductor devices based on van der Waals heterostructures.
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Submitted 12 April, 2019;
originally announced April 2019.
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Gamma-ray Showers Observed at Ground Level in Coincidence With Downward Lightning Leaders
Authors:
R. U. Abbasi,
T. Abu-Zayyad,
M. Allen,
E. Barcikowski,
J. W. Belz,
D. R. Bergman,
S. A. Blake,
M. Byrne,
R. Cady,
B. G. Cheon,
J. Chiba,
M. Chikawa,
T. Fujii,
M. Fukushima,
G. Furlich,
T. Goto,
W. Hanlon,
Y. Hayashi,
N. Hayashida,
K. Hibino,
K. Honda,
D. Ikeda,
N. Inoue,
T. Ishii,
H. Ito
, et al. (99 additional authors not shown)
Abstract:
Bursts of gamma ray showers have been observed in coincidence with downward propagating negative leaders in lightning flashes by the Telescope Array Surface Detector (TASD). The TASD is a 700~square kilometer cosmic ray observatory located in southwestern Utah, U.S.A. In data collected between 2014 and 2016, correlated observations showing the structure and temporal development of three shower-pro…
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Bursts of gamma ray showers have been observed in coincidence with downward propagating negative leaders in lightning flashes by the Telescope Array Surface Detector (TASD). The TASD is a 700~square kilometer cosmic ray observatory located in southwestern Utah, U.S.A. In data collected between 2014 and 2016, correlated observations showing the structure and temporal development of three shower-producing flashes were obtained with a 3D lightning mapping array, and electric field change measurements were obtained for an additional seven flashes, in both cases co-located with the TASD. National Lightning Detection Network (NLDN) information was also used throughout. The showers arrived in a sequence of 2--5 short-duration ($\le$10~$μ$s) bursts over time intervals of several hundred microseconds, and originated at an altitude of $\simeq$3--5 kilometers above ground level during the first 1--2 ms of downward negative leader breakdown at the beginning of cloud-to-ground lightning flashes. The shower footprints, associated waveforms and the effect of atmospheric propagation indicate that the showers consist primarily of downward-beamed gamma radiation. This has been supported by GEANT simulation studies, which indicate primary source fluxes of $\simeq$$10^{12}$--$10^{14}$ photons for $16^{\circ}$ half-angle beams. We conclude that the showers are terrestrial gamma-ray flashes (TGFs), similar to those observed by satellites, but that the ground-based observations are more representative of the temporal source activity and are also more sensitive than satellite observations, which detect only the most powerful TGFs.
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Submitted 18 May, 2018; v1 submitted 17 May, 2017;
originally announced May 2017.
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Imaging of interlayer coupling in van der Waals heterostructures using a bright-field optical microscope
Authors:
Evgeny M. Alexeev,
Alessandro Catanzaro,
Oleksandr V. Skrypka,
Pramoda K. Nayak,
Seongjoon Ahn,
Sangyeon Pak,
Juwon Lee,
Jung Inn Sohn,
Kostya S. Novoselov,
Hyeon Suk Shin,
Alexander I. Tartakovskii
Abstract:
Vertically stacked atomic layers from different layered crystals can be held together by van der Waals forces, which can be used for building novel heterostructures, offering a platform for developing a new generation of atomically thin, transparent and flexible devices. The performance of these devices is critically dependent on the layer thickness and the interlayer electronic coupling, influenc…
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Vertically stacked atomic layers from different layered crystals can be held together by van der Waals forces, which can be used for building novel heterostructures, offering a platform for developing a new generation of atomically thin, transparent and flexible devices. The performance of these devices is critically dependent on the layer thickness and the interlayer electronic coupling, influencing the hybridisation of the electronic states as well as charge and energy transfer between the layers. The electronic coupling is affected by the relative orientation of the layers as well as by the cleanliness of their interfaces. Here, we demonstrate an efficient method for monitoring interlayer coupling in heterostructures made from transition metal dichalcogenides using photoluminescence imaging in a bright-field optical microscope. The colour and brightness in such images are used here to identify mono- and few-layer crystals, and to track changes in the interlayer coupling and the emergence of interlayer excitons after thermal annealing in mechanically exfoliated flakes as well as a function of the twist angle in atomic layers grown by chemical vapour deposition. Material and crystal thickness sensitivity of the presented imaging technique makes it a powerful tool for characterisation of van der Waals heterostructures assembled by a wide variety of methods, using combinations of materials obtained through mechanical or chemical exfoliation and crystal growth.
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Submitted 1 May, 2017; v1 submitted 23 December, 2016;
originally announced December 2016.
