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Capping Layer Effects on $Sb_{2}S_{3}$-based Reconfigurable Photonic Devices
Authors:
Ting Yu Teo,
Nanxi Li,
Landobasa Y. M. Tobing,
Amy S. K. Tong,
Doris K. T. Ng,
Zhihao Ren,
Chengkuo Lee,
Lennon Y. T. Lee,
Robert Edward Simpson
Abstract:
Capping layers are essential for protecting phase change materials (PCMs) used in non-volatile photonics technologies. This work demonstrates how $(ZnS)_{0.8}-(SiO_2)_{0.2}$ caps radically influence the performance of $Sb_{2}S_{3}$ and Ag-doped $Sb_{2}S_{3}$ integrated photonic devices. We found that at least 30 nm of capping material is necessary to protect the material from Sulfur loss. However,…
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Capping layers are essential for protecting phase change materials (PCMs) used in non-volatile photonics technologies. This work demonstrates how $(ZnS)_{0.8}-(SiO_2)_{0.2}$ caps radically influence the performance of $Sb_{2}S_{3}$ and Ag-doped $Sb_{2}S_{3}$ integrated photonic devices. We found that at least 30 nm of capping material is necessary to protect the material from Sulfur loss. However, adding this cap affects the crystallization temperatures of the two PCMs in different ways. The crystallization temperature of $Sb_{2}S_{3}$ and Ag-doped $Sb_{2}S_{3}$ increased and decreased respectively, which is attributed to interfacial energy differences. Capped and uncapped Ag-doped $Sb_{2}S_{3}$ microring resonator (MRR) devices were fabricated and measured to understand how the cap affects the device performance. Surprisingly, the resonant frequency of the MRR exhibited a larger red-shift upon crystallization for the capped PCMs. This effect was due to the cap increasing the modal overlap with the PCM layer. Caps can, therefore, be used to provide a greater optical phase shift per unit length, thus reducing the overall footprint of these programmable devices. Overall, we conclude that caps on PCMs are not just useful for stabilizing the PCM layer, but can also be used to tune the PCM crystallization temperature and reduce device footprint. Moreover, the capping layer can be exploited to enhance light-matter interactions with the PCM element.
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Submitted 5 May, 2023;
originally announced May 2023.
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Low energy switching of phase change materials using a 2D thermal boundary layer
Authors:
Jing Ning,
Yunzheng Wang,
Ting Yu Teo,
Chung-Che Huang,
Ioannis Zeimpekis,
Katrina Morgan,
Siew Lang Teo,
Daniel W. Hewak,
Michel Bosman,
Robert E. Simpson
Abstract:
The switchable optical and electrical properties of phase change materials (PCMs) are finding new applications beyond data storage in reconfigurable photonic devices. However, high power heat pulses are needed to melt-quench the material from crystalline to amorphous. This is especially true in silicon photonics, where the high thermal conductivity of the waveguide material makes heating the PCM e…
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The switchable optical and electrical properties of phase change materials (PCMs) are finding new applications beyond data storage in reconfigurable photonic devices. However, high power heat pulses are needed to melt-quench the material from crystalline to amorphous. This is especially true in silicon photonics, where the high thermal conductivity of the waveguide material makes heating the PCM energy inefficient. Here, we improve the energy efficiency of the laser-induced phase transitions by inserting a layer of two-dimensional (2D) material, either MoS2 or WS2, between the silica or silicon and the PCM. The 2D material reduces the required laser power by at least 40% during the amorphization (RESET) process, depending on the substrate. Thermal simulations confirm that both MoS2 and WS2 2D layers act as a thermal barrier, which efficiently confines energy within the PCM layer. Remarkably, the thermal insulation effect of the 2D layer is equivalent to a ~100 nm layer of SiO2. The high thermal boundary resistance induced by the van der Waals (vdW)-bonded layers limits the thermal diffusion through the layer interfaces. Hence, 2D materials with stable vdW interfaces can be used to improve the thermal efficiency of PCM-tuned Si photonic devices. Furthermore, our waveguide simulations show that the 2D layer does not affect the propagating mode in the Si waveguide, thus this simple additional thin film produces a substantial energy efficiency improvement without degrading the optical performance of the waveguide. Our findings pave the way for energy-efficient laser-induced structural phase transitions in PCM-based reconfigurable photonic devices.
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Submitted 9 February, 2022;
originally announced February 2022.
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A comparison of phase change materials in reconfigurable silicon photonic directional couplers
Authors:
Ting Yu Teo,
Milos Krbal,
Jan Mistrik,
Jan Prikryl,
Li Lu,
Robert Edward Simpson
Abstract:
The unique optical properties of phase change materials (PCMs) can be exploited to develop efficient reconfigurable photonic devices. Here, we design, model, and compare the performance of programmable 1X2 optical couplers based on: Ge$_2$Sb$_2$Te$_5$, Ge$_2$Sb$_2$Se$_4$Te$_1$, Sb$_2$Se$_3$, and Sb$_2$S$_3$ PCMs. Once programmed, these devices are passive, which can reduce the overall energy consu…
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The unique optical properties of phase change materials (PCMs) can be exploited to develop efficient reconfigurable photonic devices. Here, we design, model, and compare the performance of programmable 1X2 optical couplers based on: Ge$_2$Sb$_2$Te$_5$, Ge$_2$Sb$_2$Se$_4$Te$_1$, Sb$_2$Se$_3$, and Sb$_2$S$_3$ PCMs. Once programmed, these devices are passive, which can reduce the overall energy consumed compared to thermo-optic or electro-optic reconfigurable devices. Of all the PCMs studied, our ellipsometry refractive index measurements show that Sb$_2$S$_3$ has the lowest absorption in the telecommunications wavelength band. Moreover, Sb$_2$S$_3$-based couplers show the best overall performance, with the lowest insertion losses in both the amorphous and crystalline states. We show that by growth crystallization tuning at least four different coupling ratios can be reliably programmed into the Sb$_2$S$_3$ directional couplers. We used this effect to design a 2-bit tuneable Sb$_2$S$_3$ directional coupler with a dynamic range close to 32 dB. The bit-depth of the coupler appears to be limited by the crystallization stochasticity.
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Submitted 5 November, 2021; v1 submitted 2 June, 2021;
originally announced June 2021.
