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Ultracompact programmable silicon photonics using layers of low-loss phase-change material Sb$_2$Se$_3$ of increasing thickness
Authors:
Sophie Blundell,
Thomas Radford,
Idris A. Ajia,
Daniel Lawson,
Xingzhao Yan,
Mehdi Banakar,
David J. Thomson,
Ioannis Zeimpekis,
Otto L. Muskens
Abstract:
High-performance programmable silicon photonic circuits are considered to be a critical part of next generation architectures for optical processing, photonic quantum circuits and neural networks. Low-loss optical phase change materials (PCMs) offer a promising route towards non-volatile free-form control of light. Here, we exploit direct-write digital patterning of waveguides using layers of the…
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High-performance programmable silicon photonic circuits are considered to be a critical part of next generation architectures for optical processing, photonic quantum circuits and neural networks. Low-loss optical phase change materials (PCMs) offer a promising route towards non-volatile free-form control of light. Here, we exploit direct-write digital patterning of waveguides using layers of the PCM Sb$_2$Se$_3$ with a thickness of up to 100 nm, demonstrating the ability to strongly increase the effect per pixel compared to previous implementations where much thinner PCM layers were used. We exploit the excellent refractive index matching between Sb$_2$Se$_3$ and silicon to achieve a low-loss hybrid platform for programmable photonics. A five-fold reduction in modulation length of a Mach-Zehnder interferometer is achieved compared to previous work using thin-film Sb$_2$Se$_3$ devices, decreased to 5 $μ$m in this work. Application of the thicker PCM layers in direct-write digital programming of a multimode interferometer (MMI) shows a three-fold reduction of the number of programmed pixels to below 10 pixels per device. The demonstrated scaling of performance with PCM layer thickness is important for establishing the optimum working range for hybrid silicon-PCM devices and holds promise for achieving ultracompact programmable photonic circuits.
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Submitted 19 September, 2024;
originally announced September 2024.
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High speed silicon photonic electro-optic Kerr modulation
Authors:
Jonathan Peltier,
Weiwei Zhang,
Leopold Virot,
Christian Lafforgue,
Lucas Deniel,
Delphine Marris-Morini,
Guy Aubin,
Farah Amar,
Denh Tran,
Xingzhao Yan,
Callum G. Littlejohns,
Carlos Alonso-Ramos,
David J. Thomson,
Graham Reed,
Laurent Vivien
Abstract:
Electro-optic silicon-based modulators contribute to ease the integration of high-speed and low-power consumption circuits for classical optical communications or quantum computers. However, the inversion symmetry in the silicon crystal structure inhibits the use of Pockels effect. An electric field-induced optical modulation equivalent to a Pockels effect can nevertheless be achieved in silicon b…
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Electro-optic silicon-based modulators contribute to ease the integration of high-speed and low-power consumption circuits for classical optical communications or quantum computers. However, the inversion symmetry in the silicon crystal structure inhibits the use of Pockels effect. An electric field-induced optical modulation equivalent to a Pockels effect can nevertheless be achieved in silicon by the use of DC Kerr effect. Although some theoretical and experimental studies have shown its existence in silicon, the DC Kerr effect in optical modulation have led to a negligible contribution so far. This paper reports demonstration of high-speed optical modulation based on the electric field-induced linear electro-optic effect in silicon PIN junction waveguides. The relative contributions of both plasma dispersion and Kerr effects are quantified and we show that the Kerr induced modulation is dominant when a high external DC electric field is applied. Finally, the high-speed modulation response is analyzed and eye diagram up to 100 Gbits/s in NRZ format are obtained. This work demonstrates high speed modulation based on Kerr effect in silicon, and its potential for low loss, quasi-pure phase modulation.
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Submitted 27 February, 2023;
originally announced February 2023.
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Non-volatile programmable silicon photonics using an ultralow loss Sb$_2$Se$_3$ phase change material
Authors:
Matthew Delaney,
Ioannis Zeimpekis,
Han Du,
Xingzhao Yan,
Mehdi Banakar,
David J. Thomson,
Daniel W. Hewak,
Otto L. Muskens
Abstract:
Adaptable, reconfigurable and programmable are key functionalities for the next generation of silicon-based photonic processors, neural and quantum networks. Phase change technology offers proven non-volatile electronic programmability, however the materials used to date have shown prohibitively high optical losses which are incompatible with integrated photonic platforms. Here, we demonstrate the…
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Adaptable, reconfigurable and programmable are key functionalities for the next generation of silicon-based photonic processors, neural and quantum networks. Phase change technology offers proven non-volatile electronic programmability, however the materials used to date have shown prohibitively high optical losses which are incompatible with integrated photonic platforms. Here, we demonstrate the capability of the previously unexplored material Sb$_2$Se$_3$ for ultralow-loss programmable silicon photonics. The favorable combination of large refractive index contrast and ultralow losses seen in Sb$_2$Se$_3$ facilitates an unprecedented optical phase control exceeding 10$π$ radians in a Mach-Zehnder interferometer. To demonstrate full control over the flow of light, we introduce nanophotonic digital patterning as a conceptually new approach at a footprint orders of magnitude smaller than state of the art interferometer meshes. Our approach enables a wealth of possibilities in high-density reconfiguration of optical functionalities on silicon chip.
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Submitted 10 January, 2021;
originally announced January 2021.
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Deep learning enabled design of complex transmission matrices for universal optical components
Authors:
Nicholas J. Dinsdale,
Peter R. Wiecha,
Matthew Delaney,
Jamie Reynolds,
Martin Ebert,
Ioannis Zeimpekis,
David J. Thomson,
Graham T. Reed,
Philippe Lalanne,
Kevin Vynck,
Otto L. Muskens
Abstract:
Recent breakthroughs in photonics-based quantum, neuromorphic and analogue processing have pointed out the need for new schemes for fully programmable nanophotonic devices. Universal optical elements based on interferometer meshes are underpinning many of these new technologies, however this is achieved at the cost of an overall footprint that is very large compared to the limited chip real estate…
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Recent breakthroughs in photonics-based quantum, neuromorphic and analogue processing have pointed out the need for new schemes for fully programmable nanophotonic devices. Universal optical elements based on interferometer meshes are underpinning many of these new technologies, however this is achieved at the cost of an overall footprint that is very large compared to the limited chip real estate, restricting the scalability of this approach. Here, we consider an ultracompact platform for low-loss programmable elements using the complex transmission matrix of a multi-port multimode waveguide. We propose a deep learning inverse network approach to design arbitrary transmission matrices using patterns of weakly scattering perturbations. The demonstrated technique allows control over both the intensity and phase in a multiport device at a four orders reduced device footprint compared to conventional technologies, thus opening the door for large-scale integrated universal networks.
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Submitted 8 December, 2020; v1 submitted 24 September, 2020;
originally announced September 2020.
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A universal 3D imaging sensor on a silicon photonics platform
Authors:
Christopher Rogers,
Alexander Y. Piggott,
David J. Thomson,
Robert F. Wiser,
Ion E. Opris,
Steven A. Fortune,
Andrew J. Compston,
Alexander Gondarenko,
Fanfan Meng,
Xia Chen,
Graham T. Reed,
Remus Nicolaescu
Abstract:
Accurate 3D imaging is essential for machines to map and interact with the physical world. While numerous 3D imaging technologies exist, each addressing niche applications with varying degrees of success, none have achieved the breadth of applicability and impact that digital image sensors have achieved in the 2D imaging world. A large-scale two-dimensional array of coherent detector pixels operat…
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Accurate 3D imaging is essential for machines to map and interact with the physical world. While numerous 3D imaging technologies exist, each addressing niche applications with varying degrees of success, none have achieved the breadth of applicability and impact that digital image sensors have achieved in the 2D imaging world. A large-scale two-dimensional array of coherent detector pixels operating as a light detection and ranging (LiDAR) system could serve as a universal 3D imaging platform. Such a system would offer high depth accuracy and immunity to interference from sunlight, as well as the ability to directly measure the velocity of moving objects. However, due to difficulties in providing electrical and photonic connections to every pixel, previous systems have been restricted to fewer than 20 pixels. Here, we demonstrate the first large-scale coherent detector array consisting of 512 ($32 \times 16$) pixels, and its operation in a 3D imaging system. Leveraging recent advances in the monolithic integration of photonic and electronic circuits, a dense array of optical heterodyne detectors is combined with an integrated electronic readout architecture, enabling straightforward scaling to arbitrarily large arrays. Meanwhile, two-axis solid-state beam steering eliminates any tradeoff between field of view and range. Operating at the quantum noise limit, our system achieves an accuracy of $3.1~\mathrm{mm}$ at a distance of 75 metres using only $4~\mathrm{mW}$ of light, an order of magnitude more accurate than existing solid-state systems at such ranges. Future reductions of pixel size using state-of-the-art components could yield resolutions in excess of 20 megapixels for arrays the size of a consumer camera sensor. This result paves the way for the development and proliferation of low cost, compact, and high performance 3D imaging cameras.
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Submitted 11 November, 2020; v1 submitted 5 August, 2020;
originally announced August 2020.
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Towards an optical FPGA - Programmable silicon photonic circuits
Authors:
Xia Chen,
Milan M. Milosevic,
Antoine F. J. Runge,
Xingshi Yu,
Ali Z. Khokhar,
Sakellaris Mailis,
David J. Thomson,
Anna C. Peacock,
Shinichi Saito,
Graham T. Reed
Abstract:
A novel technique is presented for realising programmable silicon photonic circuits. Once the proposed photonic circuit is programmed, its routing is retained without the need for additional power consumption. This technology enables a uniform multi-purpose design of photonic chips for a range of different applications and performance requirements, as it can be programmed for each specific applica…
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A novel technique is presented for realising programmable silicon photonic circuits. Once the proposed photonic circuit is programmed, its routing is retained without the need for additional power consumption. This technology enables a uniform multi-purpose design of photonic chips for a range of different applications and performance requirements, as it can be programmed for each specific application after chip fabrication. Therefore the cost per chip can be dramatically reduced because of the increase in production volume, and rapid prototyping of new photonic circuits is enabled. Essential building blocks for programmable circuits, erasable directional couplers (DCs) were designed and fabricated, utilising ion implanted waveguides. We demonstrate permanent switching between the drop port and through port of the DCs using a localised post-fabrication laser annealing process. Proof-of-principle demonstrators in the form of generic 1X4 and 2X2 programmable switching circuits were then fabricated and subsequently programmed, to define their function.
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Submitted 4 July, 2018;
originally announced July 2018.
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Spectral Estimation of Plasma Fluctuations II: Nonstationary Analysis of ELM Spectra
Authors:
Kurt S. Riedel,
Alexander Sidorenko,
Norton Bretz,
David J. Thomson
Abstract:
Several analysis methods for nonstationary fluctuations are described and applied to the edge localized mode (ELM) instabilities of limiter H-mode plasmas. The microwave scattering diagnostic observes poloidal $k_θ$ values of 3.3 cm$^{-1}$, averaged over a 20 cm region at the plasma edge.A short autoregressive filter enhances the nonstationary component of the plasma fluctuations by removing much…
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Several analysis methods for nonstationary fluctuations are described and applied to the edge localized mode (ELM) instabilities of limiter H-mode plasmas. The microwave scattering diagnostic observes poloidal $k_θ$ values of 3.3 cm$^{-1}$, averaged over a 20 cm region at the plasma edge.A short autoregressive filter enhances the nonstationary component of the plasma fluctuations by removing much of the background level of stationary fluctuations. Between ELMs, the spectrum predominantly consists of broad-banded 300-700 kHz fluctuations propagating in the electron diamagnetic drift direction, indicating the presence of a negative electric field near the plasma edge. The time-frequency spectrogram is computed with the multiple taper technique. By using the singular value decomposition of the spectrogram, it is shown that the spectrum during the ELM is broader and more symmetric than that of the stationary spectrum. The ELM period and the evolution of the spectrum between ELMs varies from discharge to discharge. For the discharge under consideration which has distinct ELMs with a 1 msec period, the spectrum has a maximum in the electron drift direction which relaxes to a near constant value %its characteristic shape in the first half millisecond after the end of the ELM and then grows slowly. In contrast, the level of the fluctuations in the ion drift direction increases exponentially by a factor of eight in the five milliseconds~after the ELM. High frequency precursors are found which occur one millisecond before the ELMs and propagate in the ion drift direction. These precursors are very short ($\sim 10 μ$secs), coherent bursts, and they predict the occurrence of an ELM with a high success rate.
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Submitted 29 March, 2018; v1 submitted 16 March, 2018;
originally announced March 2018.
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Ultrafast perturbation maps as a quantitative tool for testing of multi-port photonic devices
Authors:
Kevin Vynck,
Nicholas J. Dinsdale,
Bigeng Chen,
Roman Bruck,
Ali Z. Khokhar,
Scott A. Reynolds,
Lee Crudgington,
David J. Thomson,
Graham T. Reed,
Philippe Lalanne,
Otto L. Muskens
Abstract:
Advanced photonic probing techniques are of great importance for the development of non-contact wafer-scale testing of photonic chips. Ultrafast photomodulation has been identified as a powerful new tool capable of remotely mapping photonic devices through a scanning perturbation. Here, we develop photomodulation maps into a quantitative technique through a general and rigorous method based on Lor…
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Advanced photonic probing techniques are of great importance for the development of non-contact wafer-scale testing of photonic chips. Ultrafast photomodulation has been identified as a powerful new tool capable of remotely mapping photonic devices through a scanning perturbation. Here, we develop photomodulation maps into a quantitative technique through a general and rigorous method based on Lorentz reciprocity that allows the prediction of transmittance perturbation maps for arbitrary linear photonic systems with great accuracy and minimal computational cost. Excellent agreement is obtained between predicted and experimental maps of various optical multimode-interference devices, thereby allowing direct comparison of a device under test with a physical model of an ideal design structure. In addition to constituting a promising route for optical testing in photonics manufacturing, ultrafast perturbation mapping may be used for design optimization of photonic structures with reconfigurable functionalities.
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Submitted 12 June, 2018; v1 submitted 19 February, 2018;
originally announced February 2018.
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Multilevel Monte Carlo and Improved Timestepping Methods in Atmospheric Dispersion Modelling
Authors:
Grigoris Katsiolides,
Eike H. Müller,
Robert Scheichl,
Tony Shardlow,
Michael B. Giles,
David J. Thomson
Abstract:
A common way to simulate the transport and spread of pollutants in the atmosphere is via stochastic Lagrangian dispersion models. Mathematically, these models describe turbulent transport processes with stochastic differential equations (SDEs). The computational bottleneck is the Monte Carlo algorithm, which simulates the motion of a large number of model particles in a turbulent velocity field; f…
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A common way to simulate the transport and spread of pollutants in the atmosphere is via stochastic Lagrangian dispersion models. Mathematically, these models describe turbulent transport processes with stochastic differential equations (SDEs). The computational bottleneck is the Monte Carlo algorithm, which simulates the motion of a large number of model particles in a turbulent velocity field; for each particle, a trajectory is calculated with a numerical timestepping method. Choosing an efficient numerical method is particularly important in operational emergency-response applications, such as tracking radioactive clouds from nuclear accidents or predicting the impact of volcanic ash clouds on international aviation, where accurate and timely predictions are essential. In this paper, we investigate the application of the Multilevel Monte Carlo (MLMC) method to simulate the propagation of particles in a representative one-dimensional dispersion scenario in the atmospheric boundary layer. MLMC can be shown to result in asymptotically superior computational complexity and reduced computational cost when compared to the Standard Monte Carlo (StMC) method, which is currently used in atmospheric dispersion modelling. To reduce the absolute cost of the method also in the non-asymptotic regime, it is equally important to choose the best possible numerical timestepping method on each level. To investigate this, we also compare the standard symplectic Euler method, which is used in many operational models, with two improved timestepping algorithms based on SDE splitting methods.
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Submitted 20 September, 2017; v1 submitted 22 December, 2016;
originally announced December 2016.
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An all-optical spatial light modulator for field-programmable silicon photonic circuits
Authors:
Roman Bruck,
Kevin Vynck,
Philippe Lalanne,
Ben Mills,
David J. Thomson,
Goran Z. Mashanovich,
Graham T. Reed,
Otto L. Muskens
Abstract:
Reconfigurable photonic devices capable of routing the flow of light enable flexible integrated-optic circuits that are not hard-wired but can be externally controlled. Analogous to free-space spatial light modulators, we demonstrate all-optical wavefront shaping in integrated silicon-on-insulator photonic devices by modifying the spatial refractive index profile of the device employing ultraviole…
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Reconfigurable photonic devices capable of routing the flow of light enable flexible integrated-optic circuits that are not hard-wired but can be externally controlled. Analogous to free-space spatial light modulators, we demonstrate all-optical wavefront shaping in integrated silicon-on-insulator photonic devices by modifying the spatial refractive index profile of the device employing ultraviolet pulsed laser excitation. Applying appropriate excitation patterns grants us full control over the optical transfer function of telecommunication-wavelength light travelling through the device, thus allowing us to redefine its functionalities. As a proof-of-concept, we experimentally demonstrate routing of light between the ports of a multimode interference power splitter with more than 97% total efficiency and negligible losses. Wavefront shaping in integrated photonic circuits provides a conceptually new approach toward achieving highly adaptable and field-programmable photonic circuits with applications in optical testing and data communication.
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Submitted 25 January, 2016;
originally announced January 2016.
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Ultrafast Photomodulation Spectroscopy: a device-level tool for characterizing the flow of light in integrated photonic circuits
Authors:
Roman Bruck,
Ben Mills,
David J. Thomson,
Frederic Y. Gardes,
Youfang Hu,
Graham T. Reed,
Otto L. Muskens
Abstract:
Advances in silicon photonics have resulted in rapidly increasing complexity of integrated circuits. New methods are desirable that allow direct characterization of individual optical components in-situ, without the need for additional fabrication steps or test structures. Here, we present a new device-level method for characterization of photonic chips based on a highly localized modulation in th…
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Advances in silicon photonics have resulted in rapidly increasing complexity of integrated circuits. New methods are desirable that allow direct characterization of individual optical components in-situ, without the need for additional fabrication steps or test structures. Here, we present a new device-level method for characterization of photonic chips based on a highly localized modulation in the device using pulsed laser excitation. Optical pumping perturbs the refractive index of silicon, providing a spatially and temporally localized modulation in the transmitted light enabling time- and frequency-resolved imaging. We demonstrate the versatility of this all-optical modulation technique in imaging and in quantitative characterization of a variety of properties of silicon photonic devices, ranging from group indices in waveguides, quality factors of a ring resonator to the mode structure of a multimode interference device. Ultrafast photomodulation spectroscopy provides important information on devices of complex design, and is easily applicable for testing on the device-level.
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Submitted 7 June, 2014;
originally announced June 2014.
