Advances in Computer, Communication and Control, 2019
A comparative study on power penalty due to component, SRS, and FWM crosstalk in a WDM receiver i... more A comparative study on power penalty due to component, SRS, and FWM crosstalk in a WDM receiver is presented in this paper. The relevance of such crosstalk phenomena is analyzed depending upon various parameters and domains of operation. Power penalty is examined as a function of the number of interfering channels to compare the receiver performance in the presence of mentioned crosstalk.
Advances in Computer, Communication and Control, 2019
In this paper, 1D Photonic Crystal structure, consisting of alternate layers of silicon and air, ... more In this paper, 1D Photonic Crystal structure, consisting of alternate layers of silicon and air, is theoretically studied for gas sensing application. With one of the air layers replaced by a different gas layer, the resulting defect mode can be utilized for sensing a particular gas, from the transmittance curve, calculated by Transfer matrix method. Very small refractive index variation, ∆n = 1.5 × 10−5 and a sensitivity = 979 nm/RIU is found by this sensor.
We study the electron transport in armchair graphene nanoribbon (AGNR) resonant tunneling diode (... more We study the electron transport in armchair graphene nanoribbon (AGNR) resonant tunneling diode (RTD) using square and V-shaped potential well profiles. We use non-equilibrium Green’s function formalism to analyze the transmission and I–V characteristics. Results show that an enhancement in the peak current (I p ) can be obtained by reducing the well width (W w ) or barrier width (W b ). As W w decreases, I p shifts to a higher peak voltage (V p ), while there is almost no change in V p with decreasing W b . It is gratifying to note that there is an enhancement in I p by about 1.6 times for a V-shaped well over a square well. Furthermore, in the case of a V-shaped well, the negative differential resistance occurs in a shorter voltage range, which may beneficial for ultra-fast switching and high-frequency signal generation. Our work anticipates the suitability of graphene having better design flexibility, to develop ideally 2D RTDs for use in ultra-dense nano-electronic circuits and ...
In this paper, signal to noise ratio (S/N) of a Geon-Si Resonant Cavity Encapsulated Schottky Pho... more In this paper, signal to noise ratio (S/N) of a Geon-Si Resonant Cavity Encapsulated Schottky Photodetector has been calculated. The noise equivalent bandwidth (NEB) and different noise currents have been formulated and computed. The calculation has been done considering the trapping of carriers at the Si/Ge heterointerfaces. The noise Results show that the effect of interface trapping of holes plays
2009 Asia-Pacific Power and Energy Engineering Conference, 2009
Biomass is a primary source of energy. This paper discusses about the vital role played by biomas... more Biomass is a primary source of energy. This paper discusses about the vital role played by biomass energy in meeting the energy demand. The paper also presents the brief description of technologies involved in extracting energy from biomass. Biomass is very versatile in terms of variety of forms and number of options available for its utilization.
An attempt is made to investigate the effects of an oriented magnetic field on the field emission... more An attempt is made to investigate the effects of an oriented magnetic field on the field emission from quantum wells in ultrathin films of wide-gap semiconductors taking n-type GaAs as an example. The field emission current density is found to increase both with increasing electric field and with increasing film thickness. Furthermore, the emission shows an oscillatory nature with a quantizing magnetic field, its orientation, and the film thickness. At a given value of the magnetic field, the oscillatory nature is most significantly influenced by the effects of size quantization at relatively small values of the film thickness.
An attempt is made to investigate the electric field-aided photoemission from quantum wells in ul... more An attempt is made to investigate the electric field-aided photoemission from quantum wells in ultrathin films of degenerate wide-gap semiconductors, taking n-type GaAs as an example. It is found that the photoemission varies in a step-like manner with photon energies close to the electron affinity and exhibits oscillatory character in its dependence on the film thickness, both in presence and absence of an electric field. For photon energies significantly lower than the electron affinity, a quantized nature of the emission is observed in certain ranges of film thicknesses. Besides, the rate of increase of the photoemission with electric field is seen to increase with increasing film thickness over the range of thicknesses of interest in ultrathin films. Am Beispiel von n-GaAs wird die feldgestutzte Photoemission von Quantenwells in ultradunnen Schichten degenerierter Breitbandhalbleiter untersucht. Die Photoemission andert sich stufenformig, wenn die Photonenenergie nahe der Elektronenaffinitat ist und zeigt Oszillationen in der Abhangigkeit von der Schichtdicke sowohl mit als auch ohne angelegtes elektrisches Feld. Fur Photonenenergien merklich unterhalb der Elektronenaffinitat ist die Emission in gewissen Dickenbereichen quantisiert. Die Wachstumsrate der Photoemission im elektrischen Feld nimmt mit der Schichtdicke im gesamten interessierenden Bereich ultradunner Schichten zu.
Effect of Ge-composition on the frequency response of a Si∕SiGe P‐i‐N photodetector. [Optical Eng... more Effect of Ge-composition on the frequency response of a Si∕SiGe P‐i‐N photodetector. [Optical Engineering 45, 124001 (2006)]. Mukul K. Das, Nikhil R. Das. Abstract. The effect of Ge-composition on the transit-time limited frequency ...
A simple solvent extraction procedure for an effective separation of traces of tantalum from rock... more A simple solvent extraction procedure for an effective separation of traces of tantalum from rock phosphate samples has been developed and used in its determination through neutron activation analysis. The tantalum contents in the samples were found to be about 3.10−7%.
In this paper we investigate the current density due to electrons emitted during normal irradiati... more In this paper we investigate the current density due to electrons emitted during normal irradiation of a toroidal quantum ring of a strongly degenerate wide-gap semiconductor. The computed results show that the current density increases in a step-like manner with increase in the incident photon energy. Increased current density can be obtained by reducing the dimensions of the ring. The threshold energy for photoemission becomes an oscillatory function of the cross-sectional radius, and can be used as an important tool for monitoring parameters such as the cross-sectional radius and doping density. The threshold energy is, however, independent of the circumference of the ring.
In this paper, the intersubband transition energy in an n-type semiconductor quantum ring has bee... more In this paper, the intersubband transition energy in an n-type semiconductor quantum ring has been investigated in the presence of an electric field perpendicular to the plane of the ring. The analysis has been done considering the effect of band nonparabolicity of the semiconductor. The results show that at high electric field energy varies nonlinearly with field and the optical transition between the two lowest quantized subbands can be controlled by the electric field. It has also been shown how this fine wavelength tuning by electric field depends on the band gap of the semiconductor.
Advances in Computer, Communication and Control, 2019
A comparative study on power penalty due to component, SRS, and FWM crosstalk in a WDM receiver i... more A comparative study on power penalty due to component, SRS, and FWM crosstalk in a WDM receiver is presented in this paper. The relevance of such crosstalk phenomena is analyzed depending upon various parameters and domains of operation. Power penalty is examined as a function of the number of interfering channels to compare the receiver performance in the presence of mentioned crosstalk.
Advances in Computer, Communication and Control, 2019
In this paper, 1D Photonic Crystal structure, consisting of alternate layers of silicon and air, ... more In this paper, 1D Photonic Crystal structure, consisting of alternate layers of silicon and air, is theoretically studied for gas sensing application. With one of the air layers replaced by a different gas layer, the resulting defect mode can be utilized for sensing a particular gas, from the transmittance curve, calculated by Transfer matrix method. Very small refractive index variation, ∆n = 1.5 × 10−5 and a sensitivity = 979 nm/RIU is found by this sensor.
We study the electron transport in armchair graphene nanoribbon (AGNR) resonant tunneling diode (... more We study the electron transport in armchair graphene nanoribbon (AGNR) resonant tunneling diode (RTD) using square and V-shaped potential well profiles. We use non-equilibrium Green’s function formalism to analyze the transmission and I–V characteristics. Results show that an enhancement in the peak current (I p ) can be obtained by reducing the well width (W w ) or barrier width (W b ). As W w decreases, I p shifts to a higher peak voltage (V p ), while there is almost no change in V p with decreasing W b . It is gratifying to note that there is an enhancement in I p by about 1.6 times for a V-shaped well over a square well. Furthermore, in the case of a V-shaped well, the negative differential resistance occurs in a shorter voltage range, which may beneficial for ultra-fast switching and high-frequency signal generation. Our work anticipates the suitability of graphene having better design flexibility, to develop ideally 2D RTDs for use in ultra-dense nano-electronic circuits and ...
In this paper, signal to noise ratio (S/N) of a Geon-Si Resonant Cavity Encapsulated Schottky Pho... more In this paper, signal to noise ratio (S/N) of a Geon-Si Resonant Cavity Encapsulated Schottky Photodetector has been calculated. The noise equivalent bandwidth (NEB) and different noise currents have been formulated and computed. The calculation has been done considering the trapping of carriers at the Si/Ge heterointerfaces. The noise Results show that the effect of interface trapping of holes plays
2009 Asia-Pacific Power and Energy Engineering Conference, 2009
Biomass is a primary source of energy. This paper discusses about the vital role played by biomas... more Biomass is a primary source of energy. This paper discusses about the vital role played by biomass energy in meeting the energy demand. The paper also presents the brief description of technologies involved in extracting energy from biomass. Biomass is very versatile in terms of variety of forms and number of options available for its utilization.
An attempt is made to investigate the effects of an oriented magnetic field on the field emission... more An attempt is made to investigate the effects of an oriented magnetic field on the field emission from quantum wells in ultrathin films of wide-gap semiconductors taking n-type GaAs as an example. The field emission current density is found to increase both with increasing electric field and with increasing film thickness. Furthermore, the emission shows an oscillatory nature with a quantizing magnetic field, its orientation, and the film thickness. At a given value of the magnetic field, the oscillatory nature is most significantly influenced by the effects of size quantization at relatively small values of the film thickness.
An attempt is made to investigate the electric field-aided photoemission from quantum wells in ul... more An attempt is made to investigate the electric field-aided photoemission from quantum wells in ultrathin films of degenerate wide-gap semiconductors, taking n-type GaAs as an example. It is found that the photoemission varies in a step-like manner with photon energies close to the electron affinity and exhibits oscillatory character in its dependence on the film thickness, both in presence and absence of an electric field. For photon energies significantly lower than the electron affinity, a quantized nature of the emission is observed in certain ranges of film thicknesses. Besides, the rate of increase of the photoemission with electric field is seen to increase with increasing film thickness over the range of thicknesses of interest in ultrathin films. Am Beispiel von n-GaAs wird die feldgestutzte Photoemission von Quantenwells in ultradunnen Schichten degenerierter Breitbandhalbleiter untersucht. Die Photoemission andert sich stufenformig, wenn die Photonenenergie nahe der Elektronenaffinitat ist und zeigt Oszillationen in der Abhangigkeit von der Schichtdicke sowohl mit als auch ohne angelegtes elektrisches Feld. Fur Photonenenergien merklich unterhalb der Elektronenaffinitat ist die Emission in gewissen Dickenbereichen quantisiert. Die Wachstumsrate der Photoemission im elektrischen Feld nimmt mit der Schichtdicke im gesamten interessierenden Bereich ultradunner Schichten zu.
Effect of Ge-composition on the frequency response of a Si∕SiGe P‐i‐N photodetector. [Optical Eng... more Effect of Ge-composition on the frequency response of a Si∕SiGe P‐i‐N photodetector. [Optical Engineering 45, 124001 (2006)]. Mukul K. Das, Nikhil R. Das. Abstract. The effect of Ge-composition on the transit-time limited frequency ...
A simple solvent extraction procedure for an effective separation of traces of tantalum from rock... more A simple solvent extraction procedure for an effective separation of traces of tantalum from rock phosphate samples has been developed and used in its determination through neutron activation analysis. The tantalum contents in the samples were found to be about 3.10−7%.
In this paper we investigate the current density due to electrons emitted during normal irradiati... more In this paper we investigate the current density due to electrons emitted during normal irradiation of a toroidal quantum ring of a strongly degenerate wide-gap semiconductor. The computed results show that the current density increases in a step-like manner with increase in the incident photon energy. Increased current density can be obtained by reducing the dimensions of the ring. The threshold energy for photoemission becomes an oscillatory function of the cross-sectional radius, and can be used as an important tool for monitoring parameters such as the cross-sectional radius and doping density. The threshold energy is, however, independent of the circumference of the ring.
In this paper, the intersubband transition energy in an n-type semiconductor quantum ring has bee... more In this paper, the intersubband transition energy in an n-type semiconductor quantum ring has been investigated in the presence of an electric field perpendicular to the plane of the ring. The analysis has been done considering the effect of band nonparabolicity of the semiconductor. The results show that at high electric field energy varies nonlinearly with field and the optical transition between the two lowest quantized subbands can be controlled by the electric field. It has also been shown how this fine wavelength tuning by electric field depends on the band gap of the semiconductor.
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