The MPX3 family of magnetic van-der-Waals materials (M denotes a first row transition metal and X... more The MPX3 family of magnetic van-der-Waals materials (M denotes a first row transition metal and X either S or Se) are currently the subject of broad and intense attention for low-dimensional magnetism and transport and also for novel device and technological applications, but the vanadium compounds have until this point not been studied beyond their basic properties. We present the observation of an isostructural Mott insulator–metal transition in van-der-Waals honeycomb antiferromagnet V0.9PS3 through high-pressure x-ray diffraction and transport measurements. We observe insulating variable-range-hopping type resistivity in V0.9PS3, with a gradual increase in effective dimensionality with increasing pressure, followed by a transition to a metallic resistivity temperature dependence between 112 and 124 kbar. The metallic state additionally shows a low-temperature upturn we tentatively attribute to the Kondo effect. A gradual structural distortion is seen between 26 and 80 kbar, but ...
ABSTRACT We present an overview of unconventional phenomena arising close to ferromagnetic and fe... more ABSTRACT We present an overview of unconventional phenomena arising close to ferromagnetic and ferroelectric quantum phase transitions. The applicability and potential breakdown of traditional field theories of quantum criticality and the emergence of a multiplicity of critical fields in particular will be discussed.
High pressure, low temperature, high magnetic field data obtained on high quality single crystals... more High pressure, low temperature, high magnetic field data obtained on high quality single crystals of NiS2, to clarify the nature of the pressure induced metal-insulator transition and to map out key parts of the electronic Fermi surface in the high pressure metallic state. Resistivity measurements under pressure were carried out at the Cavendish Laboratory, Cambridge, and tank circuit oscillator measurements were carried out at NHMFL Tallahassee. The Fermi surface calculations were performed using Wien2k and plotted using Xcrysden. Details of the methods and analysis methods are published in the Scientific Reports article with the same name.This work was supported by the ERC, EPSRC [grant number EP/K012894/1], NSF [grant number DMR-1157490], DOE [grant number NNSA SSAA DE-NA0001979]
The MPX3 family of magnetic van-der-Waals materials (M denotes a first row transition metal and X... more The MPX3 family of magnetic van-der-Waals materials (M denotes a first row transition metal and X either S or Se) are currently the subject of broad and intense attention for low-dimensional magnetism and transport and also for novel device and technological applications, but the vanadium compounds have until this point not been studied beyond their basic properties. We present the observation of an isostructural Mott insulator–metal transition in van-der-Waals honeycomb antiferromagnet V0.9PS3 through high-pressure x-ray diffraction and transport measurements. We observe insulating variable-range-hopping type resistivity in V0.9PS3, with a gradual increase in effective dimensionality with increasing pressure, followed by a transition to a metallic resistivity temperature dependence between 112 and 124 kbar. The metallic state additionally shows a low-temperature upturn we tentatively attribute to the Kondo effect. A gradual structural distortion is seen between 26 and 80 kbar, but ...
ABSTRACT We present an overview of unconventional phenomena arising close to ferromagnetic and fe... more ABSTRACT We present an overview of unconventional phenomena arising close to ferromagnetic and ferroelectric quantum phase transitions. The applicability and potential breakdown of traditional field theories of quantum criticality and the emergence of a multiplicity of critical fields in particular will be discussed.
High pressure, low temperature, high magnetic field data obtained on high quality single crystals... more High pressure, low temperature, high magnetic field data obtained on high quality single crystals of NiS2, to clarify the nature of the pressure induced metal-insulator transition and to map out key parts of the electronic Fermi surface in the high pressure metallic state. Resistivity measurements under pressure were carried out at the Cavendish Laboratory, Cambridge, and tank circuit oscillator measurements were carried out at NHMFL Tallahassee. The Fermi surface calculations were performed using Wien2k and plotted using Xcrysden. Details of the methods and analysis methods are published in the Scientific Reports article with the same name.This work was supported by the ERC, EPSRC [grant number EP/K012894/1], NSF [grant number DMR-1157490], DOE [grant number NNSA SSAA DE-NA0001979]
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Papers by Patricia Alireza