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2020 – today
- 2020
[c6]Alok Ranjan, Sean J. O'Shea, Michel Bosman, J. Molina, Nagarajan Raghavan
, Kin Leong Pey:
Correlation of Dielectric Breakdown and Nanoscale Adhesion in Silicon Dioxide Thin Films. IRPS 2020: 1-7
2010 – 2019
- 2018
- [c5]Alok Ranjan, Nagarajan Raghavan, Sean J. O'Shea, Sen Mei, Michel Bosman, Kalya Shubhakar, Kin Leong Pey:
Mechanism of soft and hard breakdown in hexagonal boron nitride 2D dielectrics. IRPS 2018: 4 - 2017
- [c4]Danica Mast, Michel Bosman, Sylvia Schipper, Samantha Diederiks, Sanne de Vries:
Adding Interactivity to BalanSAR: a Spatial Augmented Reality Game for Balancing in Physical Education. CHI PLAY (Companion) 2017: 383-389 - [c3]Danica Mast, Michel Bosman, Sylvia Schipper, Sanne de Vries:
BalanSAR: Using Spatial Augmented Reality to Train Children's Balancing Skills in Physical Education. TEI 2017: 625-631 - 2016
- [j8]Sen Mei, Michel Bosman, Nagarajan Raghavan, Xing Wu, Kin Leong Pey:
Compliance current dominates evolution of NiSi2 defect size in Ni/dielectric/Si RRAM devices. Microelectron. Reliab. 61: 71-77 (2016) - [j7]Kalya Shubhakar, Sen Mei, Michel Bosman, Nagarajan Raghavan, Alok Ranjan, Sean J. O'Shea, Kin Leong Pey:
Conductive filament formation at grain boundary locations in polycrystalline HfO2 -based MIM stacks: Computational and physical insight. Microelectron. Reliab. 64: 204-209 (2016) - 2015
- [j6]Nagarajan Raghavan, Michel Bosman, Kin Leong Pey:
Probabilistic insight to possibility of new metal filament nucleation during repeated cycling of conducting bridge memory. Microelectron. Reliab. 55(9-10): 1412-1416 (2015) - [j5]Nagarajan Raghavan, Daniel D. Frey, Michel Bosman, Kin Leong Pey:
Statistics of retention failure in the low resistance state for hafnium oxide RRAM using a Kinetic Monte Carlo approach. Microelectron. Reliab. 55(9-10): 1422-1426 (2015) - [j4]Kalya Shubhakar, Michel Bosman, O. A. Neucheva, Y. C. Loke, Nagarajan Raghavan, R. Thamankar, Alok Ranjan, Sean J. O'Shea, Kin Leong Pey:
An SEM/STM based nanoprobing and TEM study of breakdown locations in HfO2/SiOx dielectric stacks for failure analysis. Microelectron. Reliab. 55(9-10): 1450-1455 (2015) - [c2]Nagarajan Raghavan, Michel Bosman, Kin Leong Pey:
Spectroscopy of SILC trap locations and spatial correlation study of percolation path in the high-κ and interfacial layer. IRPS 2015: 5 - [c1]Nagarajan Raghavan, Daniel D. Frey, Michel Bosman, Kin Leong Pey:
Monte Carlo model of reset stochastics and failure rate estimation of read disturb mechanism in HfOx RRAM. IRPS 2015: 5 - 2014
- [j3]Kalya Shubhakar, Nagarajan Raghavan, Sunil Singh Kushvaha, Michel Bosman, Zhongrui Wang, Sean J. O'Shea, Kin Leong Pey:
Impact of local structural and electrical properties of grain boundaries in polycrystalline HfO2 on reliability of SiOx interfacial layer. Microelectron. Reliab. 54(9-10): 1712-1717 (2014) - [j2]Nagarajan Raghavan, Michel Bosman, Daniel D. Frey, Kin Leong Pey:
Variability model for forming process in oxygen vacancy modulated high-κ based resistive switching memory devices. Microelectron. Reliab. 54(9-10): 2266-2271 (2014) - [j1]Nagarajan Raghavan, Michel Bosman, Kin Leong Pey:
Assessment of read disturb immunity in conducting bridge memory devices - A thermodynamic perspective. Microelectron. Reliab. 54(9-10): 2295-2299 (2014)
Coauthor Index
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