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Sorin Cristoloveanu
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2010 – 2019
- 2019
- [c29]Carlos Marquez, Santiago Navarro, Carlos Navarro, Norberto Salazar, Philippe Galy, Sorin Cristoloveanu, Francisco Gámiz:
Temperature and Gate Leakage Influence on the Z2-FET Memory Operation. ESSDERC 2019: 238-241 - [c28]Louise De Conti, Sorin Cristoloveanu, Maud Vinet, Philippe Galy:
Thin-Film FD-SOI BIMOS Topologies for ESD Protection. IRPS 2019: 1-5 - 2018
- [c27]Kyunghwa Lee, Hassan El Dirani, Pascal Fonteneau, Maryline Bawedin, Shingo Sato, Sorin Cristoloveanu:
Sharp switching, hysteresis-free characteristics of Z2-FET for fast logic applications. ESSDERC 2018: 74-77 - 2017
- [c26]Kyung Hwa Lee, Maryline Bawedin, Hyungjin Park, Mukta Singh Parihar, Sorin Cristoloveanu:
Carrier lifetime evaluation in FD-SOI layers. ESSDERC 2017: 140-143 - [c25]Louise De Conti, Thomas Bedecarrats, Maud Vinet, Sorin Cristoloveanu, Philippe Galy:
Toward Gated-Diode-BIMOS for thin silicon ESD protection in advanced FD-SOI CMOS technologies. ICICDT 2017: 1-4 - 2016
- [c24]Sorin Cristoloveanu, Maryline Bawedin:
FDSOI devices: Issues and innovative solutions. ESSDERC 2016: 117-120 - [c23]Hassan El Dirani, Pascal Fonteneau, Yohann Solaro, Philippe Ferrari, Sorin Cristoloveanu:
Novel FDSOI band-modulation device: Z2-FET with Dual Ground Planes. ESSDERC 2016: 210-213 - [c22]Ki-Sik Im, Chul-Ho Won, Jae Hwa Seo, In Man Kang, Sindhuri Vodapally, Yong Soo Lee, Jung-Hee Lee, Yong-Tae Kim, Sorin Cristoloveanu:
Novel AlGaN/GaN omega-FinFETs with excellent device performances. ESSDERC 2016: 323-326 - 2015
- [c21]Dong-Hyeok Son, Young-woo Jo, Ryun-Hwi Kim, Chan Heo, Jae Hwa Seo, Jin Su Kim, In Man Kang, Sorin Cristoloveanu, Jung-Hee Lee:
Fabrication of high performance AlGaN/GaN FinFET by utilizing anisotropic wet etching in TMAH solution. ESSDERC 2015: 130-133 - [c20]Antoine Litty, Sylvie Ortolland, Dominique Golanski, Christian Dutto, Sorin Cristoloveanu:
EDMOS in ultrathin FDSOI: Effect of doping and layout of the drift region. ESSDERC 2015: 134-137 - [c19]Hassan El Dirani, Yohann Solaro, Pascal Fonteneau, Philippe Ferrari, Sorin Cristoloveanu:
Sharp-switching Z2-FET device in 14 nm FDSOI technology. ESSDERC 2015: 250-253 - [c18]Mukta Singh Parihar, Fanyu Liu, Carlos Navarro, Sylvain Barraud, Maryline Bawedin, Irina Ionica, Abhinav Kranti, Sorin Cristoloveanu:
Back-gate effects and detailed characterization of junctionless transistor. ESSDERC 2015: 282-285 - [c17]Luca Pirro, Irina Ionica, Sorin Cristoloveanu, Gérard Ghibaudo:
Low-frequency noise in bare SOI wafers: Experiments and model. ESSDERC 2015: 286-289 - [c16]S. Athanasiou, Sorin Cristoloveanu, Philippe Galy:
Preliminary 3D TCAD electro-thermal simulations of BIMOS transistor in thin silicon film for ESD protection in FDSOI UTBB CMOS technology. ICICDT 2015: 1-4 - [c15]Guillaume Besnard, Xavier Garros, Alexandre Subirats, François Andrieu, X. Federspiel, M. Rafik, Walter Schwarzenbach, Gilles Reimbold, Olivier Faynot, Sorin Cristoloveanu:
Performance and reliability of strained SOI transistors for advanced planar FDSOI technology. IRPS 2015: 2 - 2014
- [c14]Antoine Litty, Sylvie Ortolland, Dominique Golanski, Sorin Cristoloveanu:
Dual Ground Plane EDMOS in ultrathin FDSOI for 5V energy management applications. ESSDERC 2014: 134-137 - [c13]Guillaume Besnard, Xavier Garros, François Andrieu, Phuong Nguyen, William van den Daele, Patrick Reynaud, Walter Schwarzenbach, Daniel Delprat, Konstantin Bourdelle, Gilles Reimbold, Sorin Cristoloveanu:
Superior performance and Hot Carrier reliability of Strained FDSOI nMOSFETs for advanced CMOS technology nodes. ESSDERC 2014: 226-229 - [c12]Carlos Navarro, Maryline Bawedin, François Andrieu, Jacques Cluzel, Xavier Garros, Sorin Cristoloveanu:
CMOS VT characterization by capacitance measurements in FDSOI PIN gated diodes. ESSDERC 2014: 405-408 - [c11]Gilberto Antonio Umana-Membreno, Sung-Jae Chang, Maryline Bawedin, Jaroslav Antoszewski, Sorin Cristoloveanu, Lorenzo Faraone:
Mobility spectrum analysis of magnetoresistance in fully-depleted MOSFETs. ESSDERC 2014: 409-412 - 2013
- [j4]Sung-Jae Chang, Maryline Bawedin, Wade Xiong, Jong-Hyun Lee, Jung-Hee Lee, Sorin Cristoloveanu:
Remote carrier trapping in FinFETs with ONO buried layer: Temperature effects. Microelectron. Reliab. 53(3): 386-393 (2013) - [c10]Ionut Radu, Gweltaz Gaudin, William van den Daele, Fabrice Letertre, Carlos Mazure, Léa Di Cioccio, Thomas Lacave, Frederic Mazen, Pascal Scheiblin, Thomas Signamarcheix, Sorin Cristoloveanu:
Novel low temperature 3D wafer stacking technology for high density device integration. ESSDERC 2013: 151-154 - [c9]Yohann Solaro, Pascal Fonteneau, Charles-Alexandre Legrand, Claire Fenouillet-Béranger, Philippe Ferrari, Sorin Cristoloveanu:
Novel back-biased UTBB lateral SCR for FDSOI ESD protections. ESSDERC 2013: 222-225 - [c8]Sung-Jae Chang, Sorin Cristoloveanu, Maryline Bawedin, Jong-Hyun Lee, Jung-Hee Lee, Sutirtha Mukhopadhyay, Benjamin A. Piot:
Magnetoresistance measurements and unusual mobilitiy behavior in FD MOSFETs. ESSDERC 2013: 296-299 - [c7]Carlos Navarro, Maryline Bawedin, François Andrieu, Bruno Sagnes, Sorin Cristoloveanu:
Why are SCE overestimated in FD-SOI MOSFETs? ESSDERC 2013: 304-307 - [c6]Antoine Litty, Sylvie Ortolland, Sorin Cristoloveanu, Helene Beckrich Ros, Dominique Golanski:
Improved modeling of isolated EDMOS in advanced CMOS technologies. ICICDT 2013: 25-28 - 2012
- [j3]Akiko Ohata, Young-Ho Bae, Sorin Cristoloveanu, Thomas Signamarcheix, J. Widiez, Bruno Ghyselen, Olivier Faynot, Laurent Clavelier:
Deep-amorphization and solid-phase epitaxial regrowth processes for hybrid orientation technologies in SOI MOSFETs with thin body. Microelectron. Reliab. 52(11): 2602-2608 (2012) - [c5]Jing Wan, Cyrille Le Royer, Alexander Zaslavsky, Sorin Cristoloveanu:
Z2-FET used as 1-transistor high-speed DRAM. ESSDERC 2012: 197-200 - [c4]Carlos Navarro, Noel Rodriguez, Luca Donetti, Akiko Oliata, Francisco Gámiz, François Andrieu, Olivier Faynot, Claire Fenouillet-Béranger, Sorin Cristoloveanu:
Multibranch mobility characterization: Evidence of carrier mobility enhancement by back-gate biasing in FD-SOI MOSFET. ESSDERC 2012: 209-212 - 2011
- [j2]Kiichi Tachi, Sylvain Barraud, Kuniyuki Kakushima, Hiroshi Iwai, Sorin Cristoloveanu, Thomas Ernst:
Comparison of low-temperature electrical characteristics of gate-all-around nanowire FETs, Fin FETs and fully-depleted SOI FETs. Microelectron. Reliab. 51(5): 885-888 (2011)
2000 – 2009
- 2007
- [j1]Kerem Akarvardar, Abdelkarim Mercha, Eddy Simoen, Vaidyanathan Subramanian, Cor Claeys, Pierre Gentil, Sorin Cristoloveanu:
High-temperature performance of state-of-the-art triple-gate transistors. Microelectron. Reliab. 47(12): 2065-2069 (2007) - 2005
- [c3]Suheng Chen, James Vandersand, Benjamin J. Blalock, Kerem Akarvardar, Sorin Cristoloveanu, Mohammad M. Mojarradi:
SOI four-gate transistors (G4-FETs) for high voltage analog applications. ESSCIRC 2005: 311-314 - [c2]Kerem Akarvardar, Suheng Chen, Benjamin J. Blalock, Sorin Cristoloveanu, Pierre Gentil, Mohammad M. Mojarradi:
A novel four-quadrant analog multiplier using SOI four-gate transistors (G4-FETs). ESSCIRC 2005: 499-502 - [c1]Amir Fijany, Farrokh Vatan, Mohammad M. Mojarradi, Nikzad Benny Toomarian, Benjamin J. Blalock, Kerem Akarvardar, Sorin Cristoloveanu, Pierre Gentil:
The G4-FET: a universal and programmable logic gate. ACM Great Lakes Symposium on VLSI 2005: 349-352 - [e1]Laurent Fesquet, Andreas Kaiser, Sorin Cristoloveanu, Michel Brillouët:
Proceedings of the 31st European Solid-State Circuits Conference, ESSCIRC 2005, Grenoble, France, 12-16 September 2005. IEEE 2005, ISBN 0-7803-9205-1 [contents]
1990 – 1999
- 1999
- [r1]Sorin Cristoloveanu:
Silicon on Insulator Technology. The VLSI Handbook 1999
Coauthor Index
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