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ORCIDUmesh K. Mishra
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2020 – today
- 2024
[c11]Boyu Wang, Kamruzzaman Khan, Emre Akso, Henry Collins, Tanmay Chavan, Matthew Guidry, Umesh K. Mishra:
Self-aligned Scaled Planar N-polar GaN HEMTs with Raised Regrowth. DRC 2024: 1-2- [c10]Marco Saro, Francesco de Pieri, Andrea Carlotto, Mirko Fornasier, Fabiana Rampazzo, Carlo De Santi
, Gaudenzio Meneghesso, Matteo Meneghini, Enrico Zanoni, Davide Bisi, Matthew Guidry, Stacia Keller, Umesh K. Mishra:
Deep Level Effects in N-Polar AlGaN/GaN High Electron Mobility Transistors: Toward Zero Dispersion Effects. IRPS 2024: 5 - 2023
- [j9]Umesh K. Mishra:
Gallium Nitride Versus Silicon Carbide: Beyond the Switching Power Supply. Proc. IEEE 111(4): 322-328 (2023) - [c9]Emre Akso, Christopher Clymore, Wenjian Liu, Henry Collins, Brian Romanczyk, Weiyi Li, Nirupam Hatui, Christian Wurm, Stacia Keller, Matthew Guidry, Umesh K. Mishra:
Record 1 W output power from a single N-Polar GaN MISHEMT at 94 GHz. DRC 2023: 1-2 - 2022
- [c8]Davide Bisi, Bill Cruse, Philip Zuk, Primit Parikh, Umesh K. Mishra, Tsutomu Hosoda, Masamichi Kamiyama, Masahito Kanamura:
Short-Circuit Capability with GaN HEMTs : Invited. IRPS 2022: 1-7 - 2021
- [c7]Francesca Chiocchetta, Claudia Calascione, Carlo De Santi, Chandan Sharma, Fabiana Rampazzo, Xun Zheng, Brian Romanczyk, Matthew Guidry, Haoran Li, Stacia Keller, Umesh K. Mishra, Gaudenzio Meneghesso, Matteo Meneghini, Enrico Zanoni:
Role of the AlGaN Cap Layer on the Trapping Behaviour of N-Polar GaN MISHEMTs. IRPS 2021: 1-2 - 2020
- [c6]Wenjian Liu, Islam Sayed, Brian Romanczyk, Nirupam Hatui, Jana Georgieva, Haoran Li, Stacia Keller, Umesh K. Mishra:
Near-ideal Ru/N-polar GaN Schottky diode with ultralow reverse leakage. DRC 2020: 1-2 - [c5]Pawana Shrestha, Matthew Guidry, Brian Romanczyk, Rohit R. Karnaty, Nirupam Hatui, Christian Wurm, Athith Krishna, Shubhra S. Pasayat, Stacia Keller, James F. Buckwalter, Umesh K. Mishra:
A Novel Concept using Derivative Superposition at the Device-Level to Reduce Linearity Sensitivity to Bias in N-polar GaN MISHEMT. DRC 2020: 1-2
2010 – 2019
- 2019
- [c4]Rohit R. Karnaty, Umesh K. Mishra, James F. Buckwalter, Matthew Guidry, Pawana Shrestha, Brian Romanczyk, Nirupam Hatui, Xun Zheng, Christian Wurm, Haoran Li, Stacia Keller:
Virtual-Source Modeling of N-polar GaN MISHEMTS. BCICTS 2019: 1-4 - [c3]Shalini Lal, Jing Lu, Brian J. Thibeault, Man Hoi Wong, Chris G. Van de Walle, Steven P. DenBaars, Umesh K. Mishra:
Reduction of Saturation Voltage in InGaAs-Channel/lnGaN-Drain Vertical FETs and the role of traps at the InGaAs/lnGaN junction. DRC 2019: 149-150 - [c2]Maria Ruzzarin, Matteo Borga, Enrico Zanoni, Matteo Meneghini, Gaudenzio Meneghesso, Dong Ji, Wenwen Li, Silvia H. Chan, Anchal Agarwal, Chirag Gupta, Stacia Keller, Umesh K. Mishra, Srabanti Chowdhury:
Gate Stability and Robustness of In-Situ Oxide GaN Interlayer Based Vertical Trench MOSFETs (OG-FETs). IRPS 2019: 1-5 - 2015
- [c1]Toshihide Kikkawa, Tsutomu Hosoda, Ken Shono, Kenji Imanishi, Yoshimori Asai, YiFeng Wu, Likun Shen, Kurt Smith, Dixie Dunn, Saurabh Chowdhury, Peter Smith, John Gritters, Lee McCarthy, Ronald Barr, Rakesh Lal, Umesh K. Mishra, Primit Parikh:
Commercialization and reliability of 600 V GaN power switches. IRPS 2015: 6 - 2011
- [j8]Martin Kuball, Milan Tapajna, Richard J. T. Simms, Mustapha Faqir, Umesh K. Mishra:
AlGaN/GaN HEMT device reliability and degradation evolution: Importance of diffusion processes. Microelectron. Reliab. 51(2): 195-200 (2011) - [j7]Tania Roy, Yevgeniy S. Puzyrev, En-xia Zhang, Sandeepan DasGupta, Sarah A. Francis, Daniel M. Fleetwood, Ronald D. Schrimpf, Umesh K. Mishra, Jim S. Speck, Sokrates T. Pantelides:
1/f Noise in GaN HEMTs grown under Ga-rich, N-rich, and NH3-rich conditions. Microelectron. Reliab. 51(2): 212-216 (2011)
2000 – 2009
- 2008
- [j6]Umesh K. Mishra, Likun Shen, Thomas E. Kazior, YiFeng Wu:
GaN-Based RF Power Devices and Amplifiers. Proc. IEEE 96(2): 287-305 (2008) - 2006
- [j5]Andrea Corrion, Christiane Poblenz, Patrick Waltereit, Tomás Palacios, Siddharth Rajan, Umesh K. Mishra, Jim S. Speck:
Review of Recent Developments in Growth of AlGaN/GaN High-Electron Mobility Transistors on 4H-SiC by Plasma-Assisted Molecular Beam Epitaxy. IEICE Trans. Electron. 89-C(7): 906-912 (2006) - 2002
- [j4]Umesh K. Mishra, Primit Parikh, YiFeng Wu:
AlGaN/GaN HEMTs-an overview of device operation and applications. Proc. IEEE 90(6): 1022-1031 (2002) - 2000
- [j3]Karthikeyan Krishnamurthy, Ramakrishna Vetury, Stacia Keller, Umesh K. Mishra, Mark J. W. Rodwell, Stephen I. Long:
Broadband GaAs MESFET and GaN HEMT resistive feedback power amplifiers. IEEE J. Solid State Circuits 35(9): 1285-1292 (2000)
1990 – 1999
- 1999
- [j2]Thomas J. Jenkins, Lois T. Kehias, Primit Parikh, James Ibbetson, Umesh K. Mishra, Daniel Docter, Minh Le, Joe Pusl, Duncan Widman:
Ultrahigh efficiency obtained with GaAs-on-insulator MESFET technology. IEEE J. Solid State Circuits 34(9): 1239-1245 (1999) - 1992
- [j1]Loi D. Nguyen, Lawrence E. Larson, Umesh K. Mishra:
Ultra-high speed modulation-doped field-effect transistors: a tutorial review. Proc. IEEE 80(4): 494-518 (1992)
Coauthor Index
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