"Improvement of TDDB reliability, characteristics of HfO2 ..."

Chia-Wei Hsu et al. (2010)

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DOI: 10.1016/J.MICROREL.2010.01.045

access: closed

type: Journal Article

metadata version: 2020-02-22

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Chia-Wei Hsu, Yean-Kuen Fang, Wen-Kuan Yeh, Chun-Yu Chen, Yen-Ting Chiang, Feng-Renn Juang, Chien-Ting Lin, Chieh-Ming Lai:
Improvement of TDDB reliability, characteristics of HfO₂ high-k/metal gate MOSFET device with oxygen post deposition annealing. Microelectron. Reliab. 50(5): 618-621 (2010)

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