


default search action
"An explanation of the dependence of the effective saturation velocity on ..."
W. S. Lau et al. (2008)
- W. S. Lau, Peizhen Yang, V. Ho, L. F. Toh, Y. Liu, S. Y. Siah, L. Chan:
An explanation of the dependence of the effective saturation velocity on gate voltage in sub-0.1 µm metal-oxide-semiconductor transistors by quasi-ballistic transport theory. Microelectron. Reliab. 48(10): 1641-1648 (2008)

manage site settings
To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.