"Logic-in-Memory Based on Majority Gates With Voltage-Gated SOT-MRAM ..."

YaJuan Hui et al. (2024)

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DOI: 10.1109/TCSII.2023.3333207

access: closed

type: Journal Article

metadata version: 2024-04-15

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YaJuan Hui, Qingzhen Li, Cheng Liu, Deming Zhang, Xiangshui Miao:
Logic-in-Memory Based on Majority Gates With Voltage-Gated SOT-MRAM Crossbar Arrays. IEEE Trans. Circuits Syst. II Express Briefs 71(4): 2309-2313 (2024)

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