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2020 – today
- 2020
[i1]Brian Choi, Parv Saxena, Ryan Huang, Randal Burns:
Observations on Porting In-memory KV stores to Persistent Memory. CoRR abs/2002.02017 (2020)
2010 – 2019
- 2017
- [j6]Xiaoyong Xue
, Yarong Fu, Yanqing Zhao, Juan Xu, Jianguo Yang, Yufeng Xie, Yinyin Lin, Ryan Huang, Qingtian Zou, Jingang Wu:
Dynamic Data-Dependent Reference to Improve Sense Margin and Speed of Magnetoresistive Random Access Memory. IEEE Trans. Circuits Syst. II Express Briefs 64-II(2): 186-190 (2017) - 2016
- [j5]Jianguo Yang, Xiaoyong Xue, Juan Xu, Fan Ye, Yinyin Lin, Ryan Huang, Qingtian Zou, Jingang Wu:
A self-adaptive write driver with fast termination of step-up pulse for ReRAM. IEICE Electron. Express 13(7): 20160195 (2016) - [j4]Yufeng Xie, Xiaoyong Xue, Jianguo Yang, Yinyin Lin, Qingtian Zou, Ryan Huang, Jingang Wu:
A Logic Resistive Memory Chip for Embedded Key Storage With Physical Security. IEEE Trans. Circuits Syst. II Express Briefs 63-II(4): 336-340 (2016) - [j3]Xiaoyong Xue, Jianguo Yang, Yinyin Lin, Ryan Huang, Qingtian Zou, Jingang Wu:
Low-Power Variation-Tolerant Nonvolatile Lookup Table Design. IEEE Trans. Very Large Scale Integr. Syst. 24(3): 1174-1178 (2016) - 2015
- [c3]Jianguo Yang, Juan Xu, Bo Wang, Xiaoyong Xue, Ryan Huang, Qingtian Zou, Jingang Wu, Yinyin Lin:
A low cost and high reliability true random number generator based on resistive random access memory. ASICON 2015: 1-4 - 2013
- [j2]Xiaoyong Xue, Wenxiang Jian, Jianguo Yang, Fanjie Xiao, Gang Chen, Shuliu Xu, Yufeng Xie, Yinyin Lin, Ryan Huang, Qingtian Zou, Jingang Wu:
A 0.13 µm 8 Mb Logic-Based Cux Siy O ReRAM With Self-Adaptive Operation for Yield Enhancement and Power Reduction. IEEE J. Solid State Circuits 48(5): 1315-1322 (2013) - [c2]Hui Li, Wei Zhu, Ningxi Liu, Cunlin Dong, Chao Meng, Yinyin Lin, Ryan Huang, Qingtian Zou, Jingang Wu:
Novel operation scheme and technological optimization for 1T bulk capacitor-less DRAM. ASICON 2013: 1-3 - [c1]Jianguo Yang, Ying Meng, Xiaoyong Xue, Ryan Huang, Q. T. Zhou, J. G. Wu, Yinyin Lin:
A 2Mb ReRAM with two bits error correction codes circuit for high reliability application. ASICON 2013: 1-4 - 2012
- [j1]Wenxiang Jian, Gang Jin, Na Yan, Zhongyu Bi, Hao Min, Yinyin Lin, Ryan Huang, Qingtian Zou, Jingang Wu:
Variation-tolerant CuxSiyO-based RRAM for low power application. IEICE Electron. Express 9(21): 1654-1659 (2012)
Coauthor Index
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