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Lucian Shifren
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2020 – today
- 2022
- [c4]Saurabh V. Suryavanshi, Greg Yeric, Max Irby, X. M. Henry Huang, Glen Rosendale, Lucian Shifren:
Extreme Temperature (> 200 °C), Radiation Hard (> 1 Mrad), Dense (sub-50 nm CD), Fast (2 ns write pulses), Non-Volatile Memory Technology. IMW 2022: 1-4
2010 – 2019
- 2017
- [j3]Nathaniel Ross Pinckney
, Supreet Jeloka, Ronald G. Dreslinski, Trevor N. Mudge, Dennis Sylvester, David T. Blaauw, Lucian Shifren, Brian Cline, Saurabh Sinha:
Impact of FinFET on Near-Threshold Voltage Scalability. IEEE Des. Test 34(2): 31-38 (2017) - 2016
- [j2]Robert C. Aitken, Vikas Chandra, Brian Cline, Shidhartha Das, David Pietromonaco, Lucian Shifren, Saurabh Sinha, Greg Yeric:
Predicting future complementary metal-oxide-semiconductor technology - challenges and approaches. IET Comput. Digit. Tech. 10(6): 315-322 (2016) - [j1]Lawrence T. Clark, Vinay Vashishtha, Lucian Shifren, Aditya Gujja, Saurabh Sinha, Brian Cline, Chandarasekaran Ramamurthy, Greg Yeric:
ASAP7: A 7-nm finFET predictive process design kit. Microelectron. J. 53: 105-115 (2016) - [c3]Nathaniel Ross Pinckney, Lucian Shifren, Brian Cline, Saurabh Sinha, Supreet Jeloka, Ronald G. Dreslinski, Trevor N. Mudge, Dennis Sylvester, David T. Blaauw:
Near-threshold computing in FinFET technologies: opportunities for improved voltage scalability. DAC 2016: 76:1-76:6 - 2015
- [c2]Saurabh Sinha, Lucian Shifren, Vikas Chandra, Brian Cline, Greg Yeric, Robert C. Aitken, Bingjie Cheng, Andrew R. Brown, Craig Riddet, C. Alexandar, Campbell Millar, Asen Asenov:
Circuit design perspectives for Ge FinFET at 10nm and beyond. ISQED 2015: 57-60 - 2014
- [c1]Robert C. Aitken, Greg Yeric, Brian Cline, Saurabh Sinha, Lucian Shifren, Imran Iqbal, Vikas Chandra:
Physical design and FinFETs. ISPD 2014: 65-68
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