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ORCIDDina H. Triyoso
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2010 – 2019
- 2019
[c8]U. Rana, D. P. Brunco, S. Raman, Dina H. Triyoso
, M. W. Stoker, Jeffrey B. Johnson, Luigi Pantisano, K. D. Seo, M. Zhao, A. Reznicek, R. Krishnan, B. Moser, J. Freeman, L. Jang, Evgeny Kaganer:
High Performance and Yield for Super Steep Retrograde Wells (SSRW) by Well Implant / Si-based Epitaxy on Advanced Technology FinFETs. DRC 2019: 251-252- 2017
- [c7]D. H. Triyoso, G. R. Mulfinger, K. Hempel, H. Tao, F. Koehler, L. Kang, A. Kumar, T. McArdle, J. Holt, A. L. Child, S. Straub, F. Ludwig, Z. Chen, J. Kluth, Rick Carter:
Characterization of atomic layer deposited low-k spacer for FDSOI high-k metal gate transistor. ICICDT 2017: 1-4 - 2016
- [c6]D. H. Triyoso, Rick Carter, J. Kluth, K. Hempel, M. Gribelyuk, L. Kang, A. Kumar, B. Mulfinger, P. Javorka, K. Punchihewa, A. Child, T. McArdle, J. Holt, S. Straub, R. Sporer, P. Chen:
Extending HKMG scaling on CMOS with FDSOI: Advantages and integration challenges. ICICDT 2016: 1-4 - [c5]Wenke Weinreich, Konrad Seidel, Patrick Polakowski, Maximilian Drescher, A. Gummenscheimer, Mark G. Nolan, L. Cheng, D. H. Triyoso:
La-doped ZrO2 based BEoL decoupling capacitors. ICICDT 2016: 1-4 - 2014
- [c4]D. H. Triyoso, Wenke Weinreich, Konrad Seidel, Mark G. Nolan, Patrick Polakowski, D. Utess, Susanne Ohsiek, K. Dittmar, M. Weisheit, M. Licbau, R. Fox:
ALD Ta2O5 and Hf-doped Ta2O5 for BEOL compatible MIM. ICICDT 2014: 1-4 - [c3]Wenke Weinreich, Konrad Seidel, Patrick Polakowski, Stefan Riedel, Lutz Wilde, Dina H. Triyoso, Mark G. Nolan:
ALD ZrO2 processes for BEoL device applications. ICICDT 2014: 1-4 - 2013
- [c2]Dina H. Triyoso, Klaus Hempel, Susanne Ohsiek, Jeff Shu, Jamie K. Schaeffer, Markus Lenski:
Impact of precursors choice on characteristics of PEALD SiN for spacer applications. ICICDT 2013: 69-72 - 2012
- [c1]D. H. Triyoso, V. Jaschke, Jeff Shu, S. Mutas, Klaus Hempel, Jamie K. Schaeffer, Markus Lenski:
Robust PEALD SiN spacer for gate first high-k metal gate integration. ICICDT 2012: 1-4
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