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Johannes Borngräber
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2010 – 2019
- 2018
- [c11]Frank Herzel, Arzu Ergintav, Johannes Borngräber, Dietmar Kissinger:
A 15-50GHz Multiplexer Circuit in 130nm SiGe BiCMOS Technology for Ultra-Wide Frequency Ramps in FMCW Radar. NORCAS 2018: 1-4 - 2017
- [c10]Nick Rothbart, Klaus Schmalz, Johannes Borngräber, Selahattin Berk Yilmaz, Dietmar Kissinger, Heinz-Wilhelm Hübers:
Towards breath gas detection with a 245 GHz gas sensor based on SiGe BiCMOS technology. IEEE SENSORS 2017: 1-3 - [c9]Frank Herzel, Arzu Ergintav, Johannes Borngräber, Herman Jalli Ng, Dietmar Kissinger:
Design of a low-jitter wideband frequency synthesizer for 802.11ad wireless OFDM systems using a frequency sixtupler. ISCAS 2017: 1-4 - [c8]Arzu Ergintav, Frank Herzel, Johannes Borngräber, Herman Jalli Ng, Dietmar Kissinger:
Low-power and low-noise programmable frequency dividers in a 130 nm SiGe BiCMOS technology. NEWCAS 2017: 105-108 - [c7]Farabi Ibne Jamal, Mohamed Hussein Eissa, Johannes Borngräber, Herman Jalli Ng, Dietmar Kissinger, Jan Wessel:
A low-power 190-255 GHz frequency quadrupler in SiGe BiCMOS technology for on-chip spectroscopic applications. RWS 2017: 94-97 - 2016
- [c6]Klaus Schmalz, Johannes Borngräber, Selahattin Berk Yilmaz, Nick Rothbart, Dietmar Kissinger, Heinz-Wilhelm Hübers:
Gas spectroscopy with 245 GHz circuits in SiGe BiCMOS and Frac-N PLL for frequency ramps. IEEE SENSORS 2016: 1-3 - 2013
- [c5]R. Wang, Yaoming Sun, Mehmet Kaynak, Johannes Borngräber, B. Goettel, Stefan Beer, Johann-Christoph Scheytt
:
122 GHz patch antenna designs by using BCB above SiGe BiCMOS wafer process for system-on-chip applications. PIMRC 2013: 1392-1396 - 2010
- [j3]Klaus Schmalz, Wolfgang Winkler, Johannes Borngräber, Wojciech Debski, Bernd Heinemann, Christoph Scheytt:
A Subharmonic Receiver in SiGe Technology for 122 ~ GHz Sensor Applications. IEEE J. Solid State Circuits 45(9): 1644-1656 (2010) - [j2]Holger Rücker, Bernd Heinemann, Wolfgang Winkler, Rainer Barth, Johannes Borngräber, Jürgen Drews, Gerhard G. Fischer, Alexander Fox, Thomas Grabolla, Ulrich Haak, Dieter Knoll, Falk Korndörfer, Andreas Mai
, Steffen Marschmeyer, Peter Schley, Detlef Schmidt, J. Schmidt, Markus Andreas Schubert, K. Schulz, Bernd Tillack, Dirk Wolansky, Yuji Yamamoto
:
A 0.13 µm SiGe BiCMOS Technology Featuring fT/fmax of 240/330 GHz and Gate Delays Below 3 ps. IEEE J. Solid State Circuits 45(9): 1678-1686 (2010)
2000 – 2009
- 2008
- [j1]Li Wang, Srdjan Glisic, Johannes Borngräber, Wolfgang Winkler, Christoph Scheytt:
A Single-Ended Fully Integrated SiGe 77/79 GHz Receiver for Automotive Radar. IEEE J. Solid State Circuits 43(9): 1897-1908 (2008) - 2004
- [c4]Wolfgang Winkler, Johannes Borngräber, Hans Gustat, Falk Korndörfer:
60 GHz transceiver circuits in SiGe:C BiCMOS technology. ESSCIRC 2004: 83-86 - [c3]Wolfgang Winkler, Johannes Borngräber, Bernd Heinemann:
LC-oscillators above 100 GHz in silicon-based technology. ESSCIRC 2004: 131-134 - 2003
- [c2]Frank Herzel, Wolfgang Winkler, Johannes Borngräber:
An integrated 10 GHz quadrature LC-VCO in SiGe: C BiCMOS - technology for low-jitter applications. CICC 2003: 293-296
1990 – 1999
- 1999
- [c1]Wolfgang Winkler, Johannes Borngräber, Heide Erzgraeber, Ha. Erzgraber, Bernd Heinemann, Dieter Knoll, H. Jörg Osten, Michael Pierschel, Klaus Pressel, Peter Schley:
Wireless communication integrated circuits with CMOS-compatible SiGe HBT technology modules. CICC 1999: 351-358
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