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Uppili S. Raghunathan
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2020 – today
- 2023
- [c12]Prateek Kumar Sharma, Vaibhav Ruparelia, Saurabh Sirohi, Uppili S. Raghunathan, Venkat Vanukuru, Vibhor Jain:
Design Trade-offs between Series-Peaking Inductor and High $f_T$ SiGe HBTs in Transimpedance Amplifiers. BCICTS 2023: 167-170 - [c11]Dimitris P. Ioannou, Ephrem G. Gebreselasie, Vinh Pham, Uppili S. Raghunathan:
Electrostatic Discharge Stress Effects on the Performance and Reliability of High Performance NPN SiGe HBTs. BCICTS 2023: 245-248 - [c10]Harrison P. Lee, Nelson Sepúlveda-Ramos, Jeffrey W. Teng
, Jackson P. Moody, Delgermaa Nergui, Brett L. Ringel, Zachary R. Brumbach, Alizeh Premani, Uppili S. Raghunathan, Vibhor Jain, John D. Cressler:
The Effects of Carbon Doping on the Performance and Electrical Reliability of SiGe HBTs. BCICTS 2023: 253-256 - 2022
- [c9]Alvin J. Joseph, Vibhor Jain, John J. Pekarik, Ajay Raman, Shafi Syed, Liu Hang, Ned Cahoon, Randy Wolf, Venkat Vanukuru, Elan Veeramani, Beng Woon Lim, Uppili S. Raghunathan, Qizhi Liu, Yves Ngu:
SiGe HBTs for Power Amplifiers in Front-End of Radio Communication Systems. BCICTS 2022: 1-6 - [c8]Uppili S. Raghunathan, Saurabh Sirohi, Vaibhav Ruparelia, Prateek Kumar Sharma, Dimitris P. Ioannou, Vibhor Jain, H. K. Kakara, S. Gedela, Venkat Vanukuru, P. Dongmo, C. Luce, R. Hazbun, R. Krishnasamy, J. Hwang, M. Levy, Kristin Welch, S. Liu, B. Cucci, S. Cole, J. Kantarovsky, A. Vallett, I. McCallum-Cook, M. Yu, R. Phelps, A. Divergilio, A. Sturm, M. Peters, S. Johnson, R. Rassel, M. Lagerquist, M. Kerbaugh, K. Newton, J. Pekarik, Qidi Liu:
Performance Improvements of SiGe HBTs in 90nm BiCMOS Process with fT/fmax of 340/410 GHz. BCICTS 2022: 232-235 - 2021
- [c7]Dimitris P. Ioannou, Uppili S. Raghunathan, Dave Brochu, Adam W. DiVergilio, Vibhor Jain, John J. Pekarik:
Physics of Hot Carrier Degradation Under Off-State Mode Operation in High Performance NPN SiGe HBTs. BCICTS 2021: 1-4 - [c6]Ajay Raman, Vibhor Jain, Elanchezhian Veeramani, Beng Woon Lim, Uppili S. Raghunathan, Yves Ngu, Alvin Joseph:
Analysis of the Factors Limiting the RF Breakdown Voltage in SiGe HBTs for Wi-Fi PA Applications. BCICTS 2021: 1-4 - 2020
- [c5]Uppili S. Raghunathan, Pui Yee, Dave Brochu, Vibhor Jain, Harrison P. Lee, John D. Cressler, Dimitris P. Ioannou:
Physics of Hot Carrier Degradation Under Saturation Mode Operation in SiGe HBTs. BCICTS 2020: 1-4
2010 – 2019
- 2019
- [c4]Rafael Perez Martinez, Uppili S. Raghunathan, Brian R. Wier, Harrison P. Lee, John D. Cressler:
Reliability Differences Between SiGe HBTs Optimized for High-Performance and Medium-Breakdown. BCICTS 2019: 1-4 - [c3]Hanbin Ying, Jeffrey W. Teng
, George N. Tzintzarov
, Anup P. Omprakash, Sunil G. Rao, Uppili S. Raghunathan, Adrian Ildefonso
, Martin S. Fernandez
, John D. Cressler:
DC and RF Variability of SiGe HBTs Operating Down to Deep Cryogenic Temperatures. BCICTS 2019: 1-4 - 2018
- [c2]Uppili S. Raghunathan, Brian R. Wier, Zachary E. Fleetwood, Michael A. Oakley, Vibhor Jain, John D. Cressler:
Emitter-Base Profile Optimization of SiGe HBTs for Improved Thermal Stability and Frequency Response at Low-Bias Currents. BCICTS 2018: 190-193 - [c1]Brian R. Wier, Rafael Perez Martinez
, Uppili S. Raghunathan, Hanbin Ying, Saeed Zeinolabedinzadeh, John D. Cressler:
Revisiting Safe Operating Area: SiGe HBT Aging Models for Reliability-Aware Circuit Design. BCICTS 2018: 215-218
Coauthor Index
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