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ORCIDDavid L. Harame
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2010 – 2019
- 2018
[c10]David L. Harame:
RF FDSOI Technology and Modelling. ESSCIRC 2018: 214- [c9]David L. Harame:
RF FDSOI Technology and modelling. ESSDERC 2018: 154 - [c8]Jinglin Shi, A. Sidelnicov, Kok Wai J. Chew, Mei See Chin, C. Schippel, J. M. M. dos Santos, Frank Schlaphof, Lutz Meinshausen, John R. Long, David L. Harame:
Evolution and Optimization of BEOL MOM Capacitors Across Advanced CMOS Nodes. ESSDERC 2018: 190-193 - 2016
- [j13]James Hoffman, Jean-Roland Martin-Gosse, Stefan Shopov, Jack J. Pekarik, Renata Camillo-Castillo, Vibhor Jain, David L. Harame, Sorin P. Voinigescu:
Analog Circuit Blocks for 80-GHz Bandwidth Frequency-Interleaved, Linear, Large-Swing Front-Ends. IEEE J. Solid State Circuits 51(9): 1985-1993 (2016) - 2013
- [c7]Yi Zhao, Leonardo Vera, John R. Long, David L. Harame:
A 10Gb/s 6Vpp differential modulator driver in 0.18µm SiGe-BiCMOS. ISSCC 2013: 132-133
2000 – 2009
- 2006
- [c6]James S. Dunn, David L. Harame, Alvin J. Joseph, Stephen A. St. Onge, Natalie B. Feilchenfeld, Louis D. Lanzerotti, Bradley A. Orner, Ephrem G. Gebreselasie, Jeffrey B. Johnson, Douglas D. Coolbaugh, Rick Rassel, Marwan Khater:
SiGe BiCMOS Trends - Today and Tomorrow. CICC 2006: 695-702 - 2005
- [j12]Raminderpal Singh, David L. Harame, Bernard S. Meyerson:
Special Issue on Silicon Germanium - Advanced Technology, Modeling, and Design. Proc. IEEE 93(9): 1519-1521 (2005) - [j11]Alvin J. Joseph, David L. Harame, Basanth Jagannathan, Douglas D. Coolbaugh, David C. Ahlgren, John Magerlein, Louis D. Lanzerotti, Natalie B. Feilchenfeld, Stephen A. St. Onge, James S. Dunn, Edward J. Nowak:
Status and Direction of Communication Technologies - SiGe BiCMOS and RFCMOS. Proc. IEEE 93(9): 1539-1558 (2005) - 2004
- [c5]Tak Shun Dickson Cheung, John R. Long, Youri Tretiakov, David L. Harame:
A 21-27GHz self-shielded 4-way power-combining PA balun. CICC 2004: 617-620 - [c4]Yiming Chen, Xiaojuen Yuan, David Scagnelli, James Mecke, Jeff Gross, David L. Harame:
Demonstration of a SiGe RF LNA Design Using IBM Design Kits in 0.18um SiGe BiCMOS Technology. DATE 2004: 22-27 - 2003
- [j10]James S. Dunn, David C. Ahlgren, Douglas D. Coolbaugh, Natalie B. Feilchenfeld, Greg G. Freeman, David R. Greenberg, Robert A. Groves, Fernando J. Guarín, Youssef Hammad, Alvin J. Joseph, Louis D. Lanzerotti, Stephen A. St. Onge, Bradley A. Orner, Jae-Sung Rieh, Kenneth J. Stein, Steven H. Voldman, Ping-Chuan Wang, Michael J. Zierak, Seshadri Subbanna, David L. Harame, Dean A. Herman Jr., Bernard S. Meyerson:
Foundation of rf CMOS and SiGe BiCMOS technologies. IBM J. Res. Dev. 47(2-3): 101-138 (2003) - [j9]David L. Harame, Kim M. Newton, Raminderpal Singh, Susan L. Sweeney, Sue E. Strang, Jeffrey B. Johnson, Scott M. Parker, Carl E. Dickey, Mete Erturk, Greg J. Schulberg, Donald L. Jordan, David C. Sheridan, Michael P. Keene, John Boquet, Robert A. Groves, Mukesh Kumar, Dean A. Herman Jr., Bernard S. Meyerson:
Design automation methodology and rf/analog modeling for rf CMOS and SiGe BiCMOS technologies. IBM J. Res. Dev. 47(2-3): 139-176 (2003) - [j8]Alvin J. Joseph, James S. Dunn, Greg G. Freeman, David L. Harame, Douglas Coolbaugh, Robert A. Groves, Kenneth J. Stein, Rich Volant, Seshadri Subbanna, V. S. Marangos, Stephen St. Onge, Ebenezer Eshun, P. Cooper, Jeffrey B. Johnson, Jae-Sung Rieh, Basanth Jagannathan, Vidhya Ramachandran, David Ahlgren, Dawn Wang, X. Wang:
Product applications and technology directions with SiGe BiCMOS. IEEE J. Solid State Circuits 38(9): 1471-1478 (2003) - [c3]Rob A. Rutenbar, David L. Harame, Kurt Johnson, Paul Kempf, Teresa H. Meng, Reza Rofougaran, James Spoto:
Mixed signals on mixed-signal: the right next technology. DAC 2003: 278-279 - [c2]David Goren, Michael Zelikson, Rachel Gordin, Israel A. Wagner, Anastasia Barger, Alon Amir, Betty Livshitz, Anatoly Sherman, Youri Tretiakov, Robert A. Groves, J. Park, Donald L. Jordan, Sue E. Strang, Raminderpal Singh, Carl E. Dickey, David L. Harame:
On-chip interconnect-aware design and modeling methodology, based on high bandwidth transmission line devices. DAC 2003: 724-727 - 2001
- [j7]Guofu Niu, Zhenrong Jin, John D. Cressler, Rao Rapeta, Alvin J. Joseph, David L. Harame:
Transistor noise in SiGe HBT RF technology. IEEE J. Solid State Circuits 36(9): 1424-1427 (2001) - [c1]Seshadri Subbanna, Lawrence Larson, Greg G. Freeman, David Ahlgren, Kenneth J. Stein, Carl E. Dickey, James Mecke, A. Rincon, P. Bacon, Robert A. Groves, Mehmet Soyuer, David L. Harame, James S. Dunn, David Rowe, W. Chon, Dean A. Herman Jr., Bernard S. Meyerson:
Silicon-germanium BiCMOS technology and a CAD environment for 2-40 GHz VLSI mixed-signal ICs. CICC 2001: 559-566
1990 – 1999
- 1998
- [j6]K. M. Walter, B. Ebersman, D. A. Sunderland, G. D. Berg, Greg G. Freeman, Robert A. Groves, D. K. Jadus, David L. Harame:
A scaleable, statistical SPICE Gummel-Poon model for SiGe HBTs. IEEE J. Solid State Circuits 33(9): 1439-1444 (1998) - 1997
- [j5]Sorin P. Voinigescu, Michael C. Maliepaard, Jonathan L. Showell, Greg E. Babcock, David Marchesan, Michael Schroter, Peter Schvan, David L. Harame:
A scalable high-frequency noise model for bipolar transistors with application to optimal transistor sizing for low-noise amplifier design. IEEE J. Solid State Circuits 32(9): 1430-1439 (1997) - [j4]Joachim N. Burghartz, Mehmet Soyuer, Keith A. Jenkins, Michael Kies, Margaret Dolan, Kenneth J. Stein, John Malinowski, David L. Harame:
Integrated RF components in a SiGe bipolar technology. IEEE J. Solid State Circuits 32(9): 1440-1445 (1997) - [j3]Mehmet Soyuer, Joachim N. Burghartz, Herschel A. Ainspan, Keith A. Jenkins, Peter Xiao, Arvin R. Shahani, Margaret S. Dolan, David L. Harame:
An 11 GHz 3-V SiGe voltage controlled oscillator with integrated resonator. IEEE J. Solid State Circuits 32(9): 1451-1454 (1997) - [j2]Robert A. Groves, David L. Harame, Dale Jadus:
Temperature dependence of Q and inductance in spiral inductors fabricated in a silicon-germanium/BiCMOS technology. IEEE J. Solid State Circuits 32(9): 1455-1459 (1997) - 1996
- [j1]Lakshmi S. Vempati, John D. Cressler, Jeffrey Babcock, Richard C. Jaeger, David L. Harame:
Low-frequency noise in UHV/CVD epitaxial Si and SiGe bipolar transistors. IEEE J. Solid State Circuits 31(10): 1458-1467 (1996)
Coauthor Index
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