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Nabil Badereddine
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2010 – 2019
- 2014
- [j3]Leonardo Bonet Zordan, Alberto Bosio, Luigi Dilillo, Patrick Girard, Arnaud Virazel
, Nabil Badereddine:
On the Test and Mitigation of Malfunctions in Low-Power SRAMs. J. Electron. Test. 30(5): 611-627 (2014) - 2013
- [c20]Elena I. Vatajelu
, Luigi Dilillo, Alberto Bosio, Patrick Girard, Aida Todri
, Arnaud Virazel, Nabil Badereddine:
Adaptive Source Bias for Improved Resistive-Open Defect Coverage during SRAM Testing. Asian Test Symposium 2013: 109-114 - [c19]Leonardo Bonet Zordan, Alberto Bosio, Luigi Dilillo, Patrick Girard, Aida Todri
, Arnaud Virazel
, Nabil Badereddine:
Test solution for data retention faults in low-power SRAMs. DATE 2013: 442-447 - [c18]Elena I. Vatajelu
, Alberto Bosio, Luigi Dilillo, Patrick Girard, Aida Todri
, Arnaud Virazel
, Nabil Badereddine:
Analyzing the effect of concurrent variability in the core cells and sense amplifiers on SRAM read access failures. DTIS 2013: 39-44 - [c17]Elena I. Vatajelu
, Alberto Bosio, Luigi Dilillo, Patrick Girard, Aida Todri
, Arnaud Virazel
, Nabil Badereddine:
Analyzing resistive-open defects in SRAM core-cell under the effect of process variability. ETS 2013: 1-6 - [c16]Leonardo Bonet Zordan, Alberto Bosio, Luigi Dilillo, Patrick Girard, Aida Todri
, Arnaud Virazel
, Nabil Badereddine:
On the reuse of read and write assist circuits to improve test efficiency in low-power SRAMs. ITC 2013: 1-10 - [c15]Leonardo Bonet Zordan, Alberto Bosio, Luigi Dilillo, Patrick Girard, Aida Todri
, Arnaud Virazel
, Nabil Badereddine:
A built-in scheme for testing and repairing voltage regulators of low-power srams. VTS 2013: 1-6 - 2012
- [j2]Renan Alves Fonseca, Luigi Dilillo, Alberto Bosio, Patrick Girard, Serge Pravossoudovitch, Arnaud Virazel
, Nabil Badereddine:
Impact of Resistive-Bridging Defects in SRAM at Different Technology Nodes. J. Electron. Test. 28(3): 317-329 (2012) - [c14]Leonardo Bonet Zordan, Alberto Bosio, Luigi Dilillo, Patrick Girard, Aida Todri
, Arnaud Virazel
, Nabil Badereddine:
Defect analysis in power mode control logic of low-power SRAMs. ETS 2012: 1 - [c13]Leonardo Bonet Zordan, Alberto Bosio, Luigi Dilillo, Patrick Girard, Aida Todri
, Arnaud Virazel
, Nabil Badereddine:
Low-power SRAMs power mode control logic: Failure analysis and test solutions. ITC 2012: 1-10 - 2011
- [c12]Leonardo Bonet Zordan, Alberto Bosio, Luigi Dilillo, Patrick Girard, Serge Pravossoudovitch, Aida Todri
, Arnaud Virazel
, Nabil Badereddine:
Failure Analysis and Test Solutions for Low-Power SRAMs. Asian Test Symposium 2011: 459-460 - [c11]Leonardo Bonet Zordan, Alberto Bosio, Luigi Dilillo, Patrick Girard, Serge Pravossoudovitch, Arnaud Virazel, Nabil Badereddine:
Optimized march test flow for detecting memory faults in SRAM devices under bit line coupling. DDECS 2011: 353-358 - [c10]Renan Alves Fonseca, Luigi Dilillo, Alberto Bosio, Patrick Girard, Serge Pravossoudovitch, Arnaud Virazel
, Nabil Badereddine:
On using address scrambling to implement defect tolerance in SRAMs. ITC 2011: 1-8 - 2010
- [c9]Renan Alves Fonseca, Luigi Dilillo, Alberto Bosio, Patrick Girard, Serge Pravossoudovitch, Arnaud Virazel, Nabil Badereddine:
A statistical simulation method for reliability analysis of SRAM core-cells. DAC 2010: 853-856 - [c8]Renan Alves Fonseca, Luigi Dilillo, Alberto Bosio, Patrick Girard, Serge Pravossoudovitch, Arnaud Virazel, Nabil Badereddine:
Impact of Resistive-Bridging Defects in SRAM Core-Cell. DELTA 2010: 265-269 - [c7]Renan Alves Fonseca, Luigi Dilillo, Alberto Bosio, Patrick Girard, Serge Pravossoudovitch, Arnaud Virazel, Nabil Badereddine:
Analysis of resistive-bridging defects in SRAM core-cells: A comparative study from 90nm down to 40nm technology nodes. ETS 2010: 132-137 - [c6]Renan Alves Fonseca, Luigi Dilillo, Alberto Bosio, Patrick Girard, Serge Pravossoudovitch, Arnaud Virazel, Nabil Badereddine:
Setting test conditions for improving SRAM reliability. ETS 2010: 257 - [c5]Renan Alves Fonseca, Luigi Dilillo, Alberto Bosio, Patrick Girard, Serge Pravossoudovitch, Arnaud Virazel, Nabil Badereddine:
Detecting NBTI induced failures in SRAM core-cells. VTS 2010: 75-80
2000 – 2009
- 2008
- [j1]Nabil Badereddine, Zhanglei Wang, Patrick Girard, Krishnendu Chakrabarty
, Arnaud Virazel
, Serge Pravossoudovitch, Christian Landrault:
A Selective Scan Slice Encoding Technique for Test Data Volume and Test Power Reduction. J. Electron. Test. 24(4): 353-364 (2008) - 2006
- [c4]Nabil Badereddine, Zhanglei Wang, Patrick Girard, Krishnendu Chakrabarty
, Serge Pravossoudovitch, Christian Landrault:
Power-Aware Test Data Compression for Embedded IP Cores. ATS 2006: 5-10 - [c3]Nabil Badereddine, Patrick Girard, Serge Pravossoudovitch, Christian Landrault, Arnaud Virazel, Hans-Joachim Wunderlich:
Structural-Based Power-Aware Assignment of Don't Cares for Peak Power Reduction during Scan Testing. VLSI-SoC 2006: 403-408 - 2005
- [c2]Nabil Badereddine, Patrick Girard, Arnaud Virazel
, Serge Pravossoudovitch, Christian Landrault:
Controlling Peak Power Consumption During Scan Testing: Power-Aware DfT and Test Set Perspectives. PATMOS 2005: 540-549 - [c1]Nabil Badereddine, Patrick Girard, Serge Pravossoudovitch, Arnaud Virazel, Christian Landrault:
Scan Cell Reordering for Peak Power Reduction during Scan Test Cycles. VLSI-SoC 2005: 267-281
Coauthor Index
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